IRFH5250DTRPBF [INFINEON]
Synchronous MOSFET for high frequency buck converters; 同步MOSFET高频降压转换器
| 型号： | IRFH5250DTRPBF |
| 厂家： | 
Infineon |
| 描述： | Synchronous MOSFET for high frequency buck converters |
| 文件： | 总8页 (文件大小：214K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH5250DPbF
HEXFET® Power MOSFET
VDS
25
V
RDS(on) max
(@VGS = 10V)
VSD max
1.4
m
0.6
27
V
ns
A
(@IS = 5.0A)
trr (typical)
ID
PQFN 5X6 mm
100
(@Tmb = 25°C)
Applications
Synchronous MOSFET for high frequency buck converters
FeaturesandBenefits
Benefits
Features
Low RDSon (<1.4m)
Lower Conduction Losses
Lower Switching Losses
Enable better thermal dissipation
Increased Reliability
Schottky Intrinsic Diode with Low Forward Voltage
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg tested
Low Profile (<0.9 mm)
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Orderable part number
Package Type
Standard Pack
Form
Tape and Reel
Tape and Reel
Note
Quantity
4000
IRFH5250DTRPBF
IRFH5250DTR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
400
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
25
Units
VDS
V
V
GS
± 20
40
I @ TA = 25°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
D
I @ TA = 70°C
D
32
100
100
I @ Tmb = 25°C
D
A
I @ Tmb = 100°C
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
D
I
400
3.6
DM
Power Dissipation
Power Dissipation
P @TA = 25°C
D
W
P @Tmb = 25°C
D
156
Linear Derating Factor
Operating Junction and
0.029
-55 to + 150
W/°C
°C
T
T
J
Storage Temperature Range
STG
Notes through are on page 8
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1
January 21, 2013
IRFH5250DPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 1.0mA
––– mV/°C Reference to 25°C, ID = 10mA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
25
–––
–––
–––
1.35
–––
–––
–––
–––
–––
120
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-8.0
1.0
1.7
1.80
-11
–––
–––
–––
–––
–––
83
–––
V
VDSS/ TJ
RDS(on)
1.4
2.2
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 150μA
m
VGS(th)
Gate Threshold Voltage
2.35
V
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
500
5.0
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
μA
mA
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
–––
59
nA
VGS = -20V
gfs
Qg
Qg
S
VDS = 13V, ID = 50A
nC VGS = 10V, VDS = 13V, ID = 50A
Total Gate Charge
39
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
11
–––
–––
–––
–––
–––
–––
VDS = 13V
Qgs2
Qgd
6.1
12
VGS = 4.5V
nC
ID = 50A
Qgodr
Gate Charge Overdrive
9.9
18.1
36
Qsw
Switch Charge (Qgs2 + Qgd
)
Qoss
RG
Output Charge
nC
VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Rise Time
1.4
23
–––
–––
td(on)
tr
td(off)
tf
VDD = 13V, VGS = 4.5V
D = 50A
72
–––
–––
–––
–––
–––
–––
I
ns
Turn-Off Delay Time
Fall Time
23
RG=1.8
24
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
6115
1730
610
VGS = 0V
pF VDS = 13V
ƒ = 1.0MHz
Reverse Transfer Capacitance
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
470
50
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
100
showing the
integral reverse
(Body Diode)
Pulsed Source Current
A
G
ISM
–––
–––
400
p-n junction diode.
(Body Diode)
VSD
VSD
trr
T = 25°C, I = 5.0A, V = 0V
J S GS
Diode Forward Voltage
–––
–––
–––
–––
–––
–––
27
0.6
1.0
41
V
V
T = 25°C, I = 50A, V = 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
J
S
GS
T = 25°C, I = 50A, VDD = 13V
ns
nC
J
F
Qrr
ton
di/dt = 335A/μs
51
77
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
0.5
Max.
Units
R
Junction-to-Mounting Base
0.8
15
35
22
JC-mb
Junction-to-Case
°C/W
RJC (Top)
–––
–––
–––
Junction-to-Ambient
Junction-to-Ambient
R
JA
RJA (<10s)
2
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January 21, 2013
IRFH5250DPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
1
60μs PULSE WIDTH
Tj = 150°C
60μs PULSE WIDTH
Tj = 25°C
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.6
I
= 50A
D
V
= 10V
GS
1.4
1.2
1.0
0.8
0.6
100
10
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60μs PULSE WIDTH
1.0
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 50A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
= 20V
= 13V
ds
gd
DS
DS
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
, Drain-to-Source Voltage (V)
100
0
20
40
60
80
100
120
V
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
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3
January 21, 2013
IRFH5250DPbF
1000
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
100
10
100μsec
1msec
10msec
DC
T
= 25°C
J
1
Tc = 25°C
Tj = 150°C
V
GS
= 0V
1.0
Single Pulse
1.0
0.1
0.0
0.2
V
0.4
0.6
0.8
1.2
0.1
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
3.0
300
Limited By Package
250
2.5
2.0
1.5
1.0
0.5
200
150
100
50
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
T
75
100
125
150
T , Temperature ( °C )
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
CaseTemperature
10
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Mounting Base
4
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January 21, 2013
IRFH5250DPbF
4
3
2
1
0
2000
1800
1600
1400
1200
1000
800
I
I
= 50A
D
D
TOP
18A
24A
BOTTOM 50A
T
J
= 125°C
J
600
400
T
= 25°C
200
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulsewidth
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5
January 21, 2013
IRFH5250DPbF
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
CircuitLayoutConsiderations
LowStrayInductance
Ground Plane
LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
AS
0.01
t
p
Fig 16b. Unclamped Inductive Waveforms
Fig 16a. Unclamped Inductive Test Circuit
RD
VDS
90%
VDS
VGS
D.U.T.
RG
+
VDD
-
10%
VGS
1
VGS
PulseWidth µs
DutyFactor
td(on)
td(off)
tr
tf
Fig 17b. Switching Time Waveforms
Fig 17a. Switching Time Test Circuit
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
6
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January 21, 2013
IRFH5250DPbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "B" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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7
January 21, 2013
IRFH5250DPbF
PQFN 5x6 Outline "B" Tape and Reel
Qualification information†
Industrial††
(per JEDEC JES D47F ††† guidelines )
MS L 1
Qualification level
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25, IAS = 50A.
Pulse width 400μs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
8
www.irf.com
January 21, 2013
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