IRFH5300 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFH5300 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：824K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRMOSFET™
IRFH5300PbF
VDSS
30
V
RDS(on) max
(@ VGS = 10V)
1.4
m
Qg (typical)
Rg (typical)
50
nC
Ω
1.3
ID
PQFN 5X6 mm
336
A
(@TC (Bottom) = 25°C)
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverter MOSFET
Features
Benefits
Low RDSon (<1.4 mΩ)
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Reliability
Low Thermal Resistance to PCB (< 0.5°C/W)
100% Rg tested
Low Profile (< 0.9mm)
Increased Power Density
Multi-Vendor Compatibility
Industry-Standard Pinout
results in
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable Part Number
Package Type
Note
Form
Quantity
IRFH5300TRPbF
IRFH5300TR2PbF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Tape and Reel
4000
Tape and Reel
400
EOL notice #259
Absolute Maximum Ratings
Symbol
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Max.
30
Units
VDS
V
V
VGS
± 20
40
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
32
336
212
1344
3.6
A
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
W/°C
°C
Power Dissipation
250
0.029
Linear Derating Factor
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
Notes through are on page 9
1
Rev. 2.4, 2021-01-29
IRFH5300PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
–––
–––
Typ.
–––
0.02
1.1
Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
1.4
V
V/°C Reference to 25°C, ID = 1.0mA
BVDSS/TJ
RDS(on)
VGS = 10V, ID = 50A
m
–––
1.35
–––
–––
–––
–––
–––
190
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.7
1.8
-6.2
–––
–––
–––
–––
–––
120
50
2.1
VGS = 4.5V, ID = 50A
VGS(th)
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
VGS(th)
IDSS
5.0
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
VGS = -20V
gfs
Qg
–––
–––
75
S
VDS = 15V, ID = 50A
nC VGS = 10V, VDS = 15V, ID = 50A
Qg
Total Gate Charge
VDS = 15V
VGS = 4.5V
ID = 50A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
12
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
6.5
16
nC
See Fig. 17a & 17b
16
23
30
1.3
26
30
31
nC VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
VDD = 15V, VGS = 4.5V
ID = 50A
ns
RG=1.8
See Fig. 15
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
7200
1360
590
VGS = 0V
VDS = 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
420
50
Units
mJ
A
EAS
IAR
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
D
IS
Continuous Source Current
(Body Diode)
––– ––– 250
A
––– ––– 1344
G
ISM
Pulsed Source Current
(Body Diode)
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.0
V
ns
TJ = 25°C, IS = 50A, VGS = 0V
––– 34
––– 68
51
TJ = 25°C, IF = 50A, VDD = 15V
100 nC di/dt = 200A/µs
Thermal Resistance
Parameter
Typ.
Max.
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
R
JC (Bottom)
JC (Top)
–––
–––
–––
–––
0.5
15
35
21
°C/W
RJA
JA (<10s)
R
2
Rev. 2.4, 2021-01-29
IRFH5300PbF
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Rev. 2.4, 2021-01-29
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
IRFH5300PbF
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case (Bottom) Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
Rev. 2.4, 2021-01-29
4
IRFH5300PbF
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
Rev. 2.4, 2021-01-29
5
IRFH5300PbF
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
Fig 17a. Gate Charge Test Circuit
Fig 17b. Gate Charge Waveform
6
Rev. 2.4, 2021-01-29
IRFH5300PbF
PQFN 5x6 Outline "B" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
7
Rev. 2.4, 2021-01-29
IRFH5300PbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
(“4 or 5 digits”)
XXXX
XYWWX
XXXXX
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to website at http://www.irf.com/packaging
PQFN 5x6 Tape and Reel
Note: For the most current drawing please refer to website at http://www.irf.com/packaging
8
Rev. 2.4, 2021-01-29
IRFH5300PbF
Qualification Information
Qualification level
Industrial
(per JEDEC JESD47F †guidelines )
MSL1
Moisture Sensitivity Level
RoHS Compliant
PQFN 5mm x 6mm
(per JEDEC J-STD-020D†)
Yes
†
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.337mH, RG = 25, IAS = 50A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material. Please refer to AN-994 for
more details: http://www.irf.com/technical-info/appnotes/an-994.pdf
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 9. De-rating will be required based on the actual
environmental conditions.
Revision History
Date
Rev.
Comments
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated package outline on page 7.
7/7/2014
2.1
Updated data sheet with the new IR corporate template.
Updated package outline for “option B” and added package outline for “option G” on page 7
Updated tape and reel on page 8.
4/28/2015
5/19/2015
2.2
2.3
Updated package outline for “option G” on page 7.
Updated "IFX logo" on page 1 and page 9.
Updated datasheet based on IFX template.
Updated Datasheet based on new current rating and application note :
App-AN_1912_PL51_2001_180356
01/29/2021
2.4
Removed “HEXFET® Power MOSFET” added “IR MOSFETTM “-page1
9
Rev. 2.4, 2021-01-29
IRFH5300PbF
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, Cꢀꢁꢁ™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REALꢂ™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November ꢃꢄꢀꢅ
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Edition ꢀꢁꢂꢃ-ꢁ4-ꢂꢃ
Published by
Infineon Technologies AG
ꢄꢂꢅꢀꢃ Munich, Germany
For further information on the product, technology,
delivery terms and conditions and prices please
contact your nearest Infineon Technologies oꢆice
ꢇwww.infineon.comꢈ.
The information given in this document shall in no
event be regarded as a guarantee of conditions or
characteristics ꢆꢇBeschaꢈenheitsgarantieꢉꢊ .
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Qꢀꢄꢄ or AEC Qꢀꢄꢀ documents
of the Automotive Electronics Council.
© ꢀꢁꢂꢃ Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
WARNINGS
Due to technical requirements products may
Email: erratum@infineon.com
In addition, any information given in this contain dangerous substances. For information on
document is subject to customer’s compliance the types in question please contact your nearest
with its obligations stated in this document and Infineon Technologies oꢆice.
any applicable legal requirements, norms and
Document reference
ifxꢂ
standards concerning customer’s products and
Except as otherwise explicitly approved by Infineon
any use of the product of Infineon Technologies in
Technologies in
a written document signed by
customer’s applications.
authorized
representatives
of
Infineon
Technologies, Infineon Technologies’ products
may not be used in any applications where a
failure of the product or any consequences of the
use thereof can reasonably be expected to result in
personal injury.
The data contained in this document is exclusively
intended for technically trained staꢆ. It is the
responsibility
of
customer’s
technical
departments to evaluate the suitability of the
product for the intended application and the
completeness of the product information given in
this document with respect to such application.
相关型号：
IRFH5301
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
©2020 ICPDF网 联系我们和版权申明