IRFH8201 [INFINEON]
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. ;
| 型号： | IRFH8201 |
| 厂家： | 
Infineon |
| 描述： | The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters. |
| 文件： | 总10页 (文件大小：834K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFH8201PbF
VDSS
25
V
RDS(on) max
(@ VGS = 10V)
0.95
m
(@ VGS = 4.5V)
1.60
56
Qg (typical)
nC
A
ID
324
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
Features
Benefits
Low RDSon (<0.95m)
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Package Type
Orderable Part Number
Form
Quantity
4000
IRFH8201PbF
PQFN 5mm x 6 mm
Tape and Reel
IRFH8201TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
49
Units
VGS
V
ID @ TA = 25°C
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
324
A
205
1296
3.6
PD @TA = 25°C
PD @TC (Bottom) = 25°C
Power Dissipation
W
156
Power Dissipation
0.029
W/°C
Linear Derating Factor
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Notes through are on page 9
1
Rev. 2.4, 2020-12-14
IRFH8201PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
Typ.
–––
20
Max. Units
–––
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
BVDSS
Drain-to-Source Breakdown Voltage
V
Breakdown Voltage Temp. Coefficient
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
––– mV/°C
BVDSS/TJ
0.80
1.20
1.80
-6.1
–––
–––
–––
–––
–––
111
0.95
m
RDS(on)
Static Drain-to-Source On-Resistance
1.60
VGS(th)
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 150µA
Gate Threshold Voltage Coefficient
––– mV/°C
VGS(th)
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ=125°C
VGS = 20V
VGS = -20V
VDS = 10V, ID = 50A
VGS = 10V, VDS = 13V, ID = 50A
1.0
µA
IDSS
IGSS
Drain-to-Source Leakage Current
150
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
-100
gfs
Qg
–––
S
–––
nC
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
56
16
7.0
18
84
VDS = 13V
VGS = 4.5V
ID = 50A
Qgs1
Qgs2
Qgd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qgodr
Qsw
15
25
Qoss
RG
VDS = 16V, VGS = 0V
39
nC
Gate Resistance
1.1
27
td(on)
Turn-On Delay Time
VDD = 13V, VGS = 4.5V
ID = 50A
tr
td(off)
tf
Rise Time
Turn-Off Delay Time
Fall Time
54
31
ns
RG=4.7
22
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
7330
1730
850
VDS = 13V
ƒ = 1.0MHz
pF
Avalanche Characteristics
Parameter
Typ.
–––
Max.
ꢀꢁ7
Units
EAS
mJ
Single Pulse Avalanche Energy
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
MOSFET symbol
showing the
integral reverse
p-n junction diode.
–––
–––
156
A
1296
G
ISM
–––
–––
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
V
TJ = 25°C, IS = 50A, VGS = 0V
–––
25
1.0
ns TJ = 25°C, IF = 50A, VDD = 13V
38
86
Qrr
Reverse Recovery Charge
–––
nC di/dt = 400A/µs
57
Thermal Resistance
Parameter
Typ.
0.5
Max.
0.8
21
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
R
R
JC (Bottom)
JC (Top)
°C/W
–––
–––
–––
RJA
JA (<10s)
35
R
20
2
Rev. 2.4, 2020-12-14
IRFH8201PbF
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Rev. 2.4, 2020-12-14
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
IRFH8201PbF
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
Rev. 2.4, 2020-12-14
4
IRFH8201PbF
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
5
Rev. 2.4, 2020-12-14
IRFH8201PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(B R )D S S
t
p
15V
DRIVER
L
V
G
DS
D.U.T
AS
R
+
V
DD
-
I
A
20V
I
0.01
t
A S
p
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
Rev. 2.4, 2020-12-14
Fig 18a. Gate Charge Test Circuit
6
IRFH8201PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging
7
Rev. 2.4, 2020-12-14
IRFH8201PbF
PQFN 5x6 Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/packaging
8
Rev. 2.4, 2020-12-14
IRFH8201PbF
Qualifiction Information†
Qualification Level
Industrial
(per JEDEC JESD47F† guidelines)
MSL1
Moisture Sensitivity Level
RoHS Compliant
PQFN 5mm x 6mm
(per JEDEC J-STD-020D†)
Yes
† Applicable version of JEDEC standard at the time of product release.
Notes:
Starting TJ = 25°C, L = 0.35mH, RG = 50, IAS = 50A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 9. De-rating will be required based on the actual
environmental conditions.
Revision History
Date
Rev.
Comments
Added Rdson @ 4.5V-page1, 2
10/23/2013
2.1
Updated IDM from “400A” to “700A” on page1, 2.
Updated Fig1, Fig2, Fig3, Fig7 & Fig8 on page 3, 4.
7/30/2014
3/11/2015
2.2
2.3
Updated package outline and tape and reel on pages 7 and 8.
Updated datasheet based on IFX template.
Updated Datasheet based on new current rating and application note :
12/14/2020
2.4
App-AN_1912_PL51_2001_180356
Removed “HEXFET® Power MOSFET” -page1
9
Rev. 2.4, 2020-12-14
IRFH8201PbF
Trademarks of Infineon Technologies AG
µHVIC™, µIPM™, µPFC™, AU-ConvertIR™, AURIX™, Cꢀꢁꢁ™, CanPAK™, CIPOS™, CIPURSE™, CoolDP™, CoolGaN™, COOLiR™, CoolMOS™, CoolSET™, CoolSiC™,
DAVE™, DI-POL™, DirectFET™, DrBlade™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™,
GaNpowIR™, HEXFET™, HITFET™, HybridPACK™, iMOTION™, IRAM™, ISOFACE™, IsoPACK™, LEDrivIR™, LITIX™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™,
OPTIGA™, OptiMOS™, ORIGA™, PowIRaudio™, PowIRStage™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REALꢂ™, SmartLEWIS™, SOLID
FLASH™, SPOC™, StrongIRFET™, SupIRBuck™, TEMPFET™, TRENCHSTOP™, TriCore™, UHVIC™, XHP™, XMC™
Trademarks updated November ꢃꢄꢀꢅ
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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Edition ꢀꢁꢂꢃ-ꢁ4-ꢂꢃ
Published by
Infineon Technologies AG
ꢄꢂꢅꢀꢃ Munich, Germany
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contact your nearest Infineon Technologies oꢆice
ꢇwww.infineon.comꢈ.
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event be regarded as a guarantee of conditions or
characteristics ꢆꢇBeschaꢈenheitsgarantieꢉꢊ .
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values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
Please note that this product is not qualified
according to the AEC Qꢀꢄꢄ or AEC Qꢀꢄꢀ documents
of the Automotive Electronics Council.
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