IRFH7936PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET型号: | IRFH7936PBF |
厂家: | Infineon |
描述: | HEXFET Power MOSFET |
文件: | 总9页 (文件大小:254K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD-97337
IRFH7936PbF
HEXFET® Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
VDSS
30V
RDS(on) max
Qg
l
4.8m @V = 10V
Ω
17nC
GS
Benefits
S
S
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Drain-to-Source Voltage
Max.
30
Units
VDS
V
V
Gate-to-Source Voltage
± 20
20
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
16
A
76
160
3.1
2.0
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
D
W
W/°C
°C
Power Dissipation
Linear Derating Factor
Operating Junction and
0.025
-55 to + 150
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
2.8
Units
Junction-to-Case
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
40
Notes through ꢀ are on page 9
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1
07/17/08
IRFH7936PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
V
∆ΒVDSS/∆TJ
RDS(on)
Breakdown Voltage Temp. Coefficient ––– 0.022 ––– V/°C Reference to 25°C, ID = 1mA
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
48
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
4.1
6.0
4.8
6.8
V
GS = 10V, ID = 20A
mΩ
VGS = 4.5V, ID = 16A
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.8
2.35
––– mV/°C
V
V
V
DS = VGS, ID = 50µA
DS = 24V, VGS = 0V
-6.3
–––
–––
–––
1.0
µA
150
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
––– -100
gfs
Qg
–––
17
–––
26
S
VDS = 15V, ID = 16A
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
4.5
2.0
5.5
5.0
7.5
9.0
1.5
17
–––
–––
–––
–––
–––
–––
2.3
–––
–––
–––
–––
VDS = 15V
VGS = 4.5V
ID = 16A
nC
See Fig.17 & 18
nC
V
V
DS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
Ω
td(on)
tr
td(off)
tf
DD = 15V, VGS = 4.5V
Rise Time
Turn-Off Delay Time
12
19
ID = 16A
RG=1.8Ω
See Fig.15
ns
Fall Time
7.0
Ciss
Coss
Crss
Input Capacitance
––– 2360 –––
VGS = 0V
pF
Output Capacitance
Reverse Transfer Capacitance
–––
–––
450
210
–––
–––
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
28
16
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
3.9
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
–––
–––
160
S
p-n junction diode.
T = 25°C, I = 16A, V
= 0V
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
14
1.0
21
23
V
ns
J
S
GS
T = 25°C, I = 16A, VDD = 15V
J
F
Qrr
ton
15
nC di/dt = 300A/µs
See Fig.16
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7936PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
60µs PULSE WIDTH
Tj = 25°C
≤
60µs PULSE WIDTH
Tj = 150°C
≤
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
1
2.7V
2.7V
1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 20A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
≤
0.1
1
2
3
4
5
-60 -40 -20
0
20 40 60 80 100 120 140160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
vs.Temperature
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3
IRFH7936PbF
10000
14.0
12.0
10.0
8.0
V
C
= 0V,
f = 1 MHZ
GS
I = 16A
D
= C + C , C SHORTED
iss
gs gd ds
V
V
= 24V
= 15V
C
= C
rss
gd
DS
DS
C
= C + C
ds gd
oss
C
iss
1000
C
oss
6.0
4.0
C
rss
2.0
100
0.0
1
10
, Drain-to-Source Voltage (V)
100
0
5
10 15 20 25 30 35 40 45
Q , Total Gate Charge (nC)
V
DS
G
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-Source Voltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
= 150°C
J
T
= 25°C
J
10msec
DC
1
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
0.1
1
10
100
V
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFH7936PbF
2.5
2.0
1.5
1.0
20
15
10
5
I
= 50µA
D
0
-75 -50 -25
0
25 50 75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
, Ambient Temperature (°C)
J
A
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
AmbientTemperature
100
D = 0.50
10
1
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.05
Ri (°C/W) τi (sec)
τ
τ
J τJ
τ
1.6431
4.6179
16.903
16.855
0.000308
0.017766
0.9436
0.02
0.01
AτA
τ
1 τ1
τ
τ
2 τ2
3 τ3
4 τ4
Ci= τi/Ri
Ci= τi/Ri
40.8
0.1
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + T
SINGLE PULSE
( THERMAL RESPONSE )
A
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7936PbF
14
12
10
8
220
200
180
160
140
120
100
80
I
= 20A
I
D
D
TOP
3.0A
5.1A
BOTTOM 16A
T
= 125°C
J
6
4
2
60
40
T
= 25°C
6
J
20
0
0
2
4
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
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IRFH7936PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRFH7936PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH7936PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.22mH, RG = 25Ω, IAS = 16A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/08
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9
相关型号:
IRFH8201
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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