IRFH7932TRPBF [INFINEON]
Synchronous MOSFET for Notebook Processor Power; 同步MOSFET用于笔记本处理器电源
| 型号： | IRFH7932TRPBF |
| 厂家： | 
Infineon |
| 描述： | Synchronous MOSFET for Notebook Processor Power |
| 文件： | 总9页 (文件大小：278K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96140A
IRFH7932PbF
HEXFET® Power MOSFET
Applications
l
Synchronous MOSFET for Notebook
Processor Power
VDSS
30V
RDS(on) max
Qg
l
Synchronous Rectifer MOSFET for Isolated
DC-DC Converters in Networking Systems
3.3m @VGS = 10V
34nC
Benefits
S
S
l
l
l
Very low RDS(ON) at 4.5V VGS
Low Gate Charge
Fully Characterized Avalanche Voltage and
Current
D
D
D
D
S
G
l
l
l
l
l
100% Tested for RG
Lead-Free (Qualified up to 260°C Reflow)
RoHS compliant (Halogen Free)
Low Thermal Resistance
PQFN
Large Source Lead for more reliable Soldering
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
24
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
I
I
I
I
@ TA = 25°C
D
D
D
@ TA = 70°C
@ TC = 25°C
20
A
104
192
3.1
2
DM
Power Dissipation
P
P
@TA = 25°C
@TA = 70°C
D
D
W
W/°C
°C
Power Dissipation
Linear Derating Factor
Operating Junction and
0.03
-55 to + 150
T
J
T
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
Max.
2.2
Units
Junction-to-Case
RθJC
RθJA
°C/W
Junction-to-Ambient
–––
40
Notes through ꢀ are on page 9
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1
06/18/08
IRFH7932PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
30 ––– –––
Conditions
VGS = 0V, ID = 250µA
BVDSS
∆Β
V
∆
V
DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.35
–––
–––
–––
–––
–––
59
2.5
3.3
1.8
-5.9
–––
–––
–––
–––
–––
34
3.3
3.9
V
GS = 10V, ID = 25A
GS = 4.5V, ID = 20A
Ω
m
V
VGS(th)
Gate Threshold Voltage
2.35
V
VDS = VGS, ID = 100µA
∆
VGS(th)
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
IDSS
1.0
µA
VDS = 24V, VGS = 0V
150
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
VGS = 20V
VGS = -20V
-100
gfs
Qg
–––
51
S
VDS = 15V, ID = 20A
–––
–––
–––
–––
–––
–––
–––
Qgs1
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
7.9
3.6
11
–––
–––
–––
–––
–––
–––
VDS = 15V
Qgs2
Qgd
VGS = 4.5V
ID = 20A
nC
Qgodr
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
12
See Fig.17 & 18
Qsw
15
Qoss
Output Charge
19
nC
VDS = 16V, VGS = 0V
RG
td(on)
tr
Gate Resistance
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
0.7
20
48
23
20
Ω
–––
–––
V
DD = 15V, VGS = 4.5V
–––
–––
–––
ID = 20A
ns
td(off)
tf
Ω
Turn-Off Delay Time
Fall Time
RG=1.8
See Fig.15
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 4270 –––
–––
–––
830
420
–––
–––
VDS = 15V
pF
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
14
20
Units
mJ
Single Pulse Avalanche Energy
EAS
IAR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
–––
–––
3.9
(Body Diode)
Pulsed Source Current
showing the
integral reverse
A
G
ISM
–––
–––
200
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
21
1.0
32
50
V
T = 25°C, I = 20A, V = 0V
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 20A, VDD = 15V
J F
Qrr
ton
di/dt = 300A/µs
See Fig.16
33
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFH7932PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.7V
2.5V
2.3V
BOTTOM
BOTTOM
1
2.3V
1
0.1
0.01
2.3V
1
≤
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
2.0
1.5
1.0
0.5
I
= 25A
D
V
= 10V
GS
100
10
T
= 150°C
J
T
= 25°C
J
1
0.1
0.01
V
= 15V
DS
≤ 60µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
T
0
20 40 60 80 100 120 140 160
V , Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFH7932PbF
100000
14
12
10
8
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
V
V
= 24V
= 15V
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
10000
1000
100
Ciss
6
Coss
Crss
4
2
0
0
20
Q
40
60
80
100
1
10
100
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100
10
1
100µsec
1msec
T
= 150°C
J
10msec
T
= 25°C
J
1
T
= 25°C
A
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFH7932PbF
30
25
20
15
10
5
2.0
1.6
1.2
0.8
I
= 100µA
D
0
-75 -50 -25
0
25
50
75 100 125 150
25
50
75
100
125
150
T
, Temperature ( °C )
T
J
, Ambient Temperature (°C)
J
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Ambient Temperature
100
10
D = 0.50
0.20
0.10
0.05
1
0.02
0.01
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
1.337662
5.012987
17.95455
15.70617
0.000128
0.023270
1.0678
38.4
τ
J τJ
τa
τ
0.1
τ
1τ1
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFH7932PbF
16
14
12
10
8
40
35
30
25
20
15
10
5
I
= 25A
D
I
D
TOP
5.86A
6.91A
BOTTOM 20.0A
T
= 125°C
J
6
4
2
T
= 25°C
J
0
2
3
4
5
6
7
8
9
10
0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T , Junction Temperature (°C)
J
Fig 12. On-Resistance vs. Gate Voltage
Fig 13. Maximum Avalanche Energy
vs. Drain Current
RD
VDS
15V
VGS
D.U.T.
RG
DRIVER
+
L
+VDD
V
DS
-
VGS
PulseWidth ≤ 1 µs
DutyFactor≤ 0.1
D.U.T
AS
R
G
V
DD
-
I
A
20V
Ω
0.01
t
p
Fig 15a. Switching Time Test Circuit
Fig 14a. Unclamped Inductive Test Circuit
V
(BR)DSS
VDS
t
p
90%
10%
VGS
td(on)
td(off)
tr
tf
I
AS
Fig 15b. Switching Time Waveforms
Fig 14b. Unclamped Inductive Waveforms
6
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IRFH7932PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Current Regulator
Id
Vds
Same Type as D.U.T.
Vgs
50KΩ
.2µF
.3µF
12V
+
V
DS
D.U.T.
-
Vgs(th)
Qgs1
V
GS
3mA
I
I
Qgs2
Qgd
Qgodr
G
D
Current Sampling Resistors
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
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7
IRFH7932PbF
PQFN Package Details
PQFN Part Marking
INTERNATIONAL
RECTIFIER LOGO
6
DATE CODE
PART NUMBER
XXXX
ASSEMBLY SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec.)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min. last 4 digits of EATI #)
(Prod Mode - 4 digits SPN code)
TOP MARKING (LASER)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH7932PbF
PQFN Tape and Reel
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.071mH, RG = 25Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Rthjc is guaranteed by design
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.06/2008
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9
相关型号：
IRFH8201
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
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