IRFH8303PBF [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFH8303PBF |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：536K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFH8303PbF
HEXFET® Power MOSFET
VDSS
30
V
RDS(on) max
Qg (typical)
RG (typical)
1.10
58
m
nC
Ω
1.0
ID
100
A
(@TC (Bottom) = 25°C)
PQFN 5 x 6 mm
Applications
Control MOSFET for synchronous buck converter
Features
Benefits
Low RDS(ON) (≤ 1.10 m)
Low Thermal Resistance to PCB (<0.8°C/W)
100% Rg Tested
Lower Conduction Losses
Enable better Thermal Dissipation
Increased Reliability
Low Profile (≤ 0.9 mm)
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4000
IRFH8303PbF
PQFN 5 mm x 6 mm
IRFH8303TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
Units
VGS
V
ID @ TA = 25°C
ID @ TC(Bottom) = 25°C
ID @ TC(Bottom) = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
43
280
177
A
Continuous Drain Current, VGS @ 10V
(Source Bonding Technology Limited)
Pulsed Drain Current
ID @ TC = 25°C
100
IDM
400
3.7
PD @TA = 25°C
PD @TC(Bottom) = 25°C
Power Dissipation
W
Power Dissipation
156
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.029
W/°C
°C
TJ
-55 to + 150
TSTG
Notes through are on page 9
1
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IRFH8303PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
–––
–––
–––
Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
21
–––
V
––– mV/°C Reference to 25°C, ID = 1.0mA
BVDSS/TJ
RDS(on)
0.90
1.30
1.10
1.70
2.2
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 150µA
m
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.2
–––
–––
–––
–––
–––
158
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.7
-5.7
–––
–––
–––
–––
–––
119
58
V
––– mV/°C
1.0
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20 V
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
–––
179
87
nA
V
V
GS = -20 V
gfs
Qg
S
DS = 15 V, ID = 50A
VGS = 10V, VDS = 15V, ID = 50A
Qg
Total Gate Charge
V
V
DS = 15V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
14
8
19
17
27
33
1.0
21
91
48
65
7736
1363
743
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
ID = 50A
nC VDS = 16V, VGS = 0V
VDD = 30V, VGS = 4.5V
ns ID = 50A
RG = 1.8
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
pF
VDS = 24V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
355
Units
mJ
EAS
Diode Characteristics
Parameter
Min.
Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
–––
––– 100
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
400
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
33
51
1.0
50
77
V
TJ = 25°C, IS=50A, VGS=0V
ns TJ = 25°C, IF = 50A, VDD = 15V
di/dt = 200A/µs
nC
Thermal Resistance
Parameter
Typ.
Max.
0.8
21
Units
Junction-to-Case
–––
–––
–––
–––
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
34
21
RJA (<10s)
2
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IRFH8303PbF
1000
100
10
1000
100
10
VGS
15V
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.5V
VGS
15V
10V
7.0V
4.5V
4.0V
3.5V
3.0V
2.5V
TOP
TOP
BOTTOM
BOTTOM
2.5V
2.5V
60µs PULSE WIDTH
60µs PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
100
10
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
V
= 15V
DS
60µs PULSE WIDTH
1.0
1.0
1.5
V
2.0
2.5
3.0
3.5
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
, Gate-to-Source Voltage (V)
T , Junction Temperature (°C)
GS
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
f = 1 MHZ
GS
I = 50A
D
C
C
C
= C + C , C
SHORTED
iss
gs
gd
ds
12.0
= C
rss
oss
gd
V
V
= 24V
DS
= 15V
DS
= C + C
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
100
1
10
100
0
20 40 60 80 100 120 140 160
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRFH8303PbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100µsec
1msec
Limited by package
T = 150°C
J
10msec
T = 25°C
J
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
DC
V
= 0V
0.9
GS
0.1
0.1
0.1
1
10
100
0.3
0.4
V
0.5
0.6
0.7
0.8
1.0
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
300
2.6
Limited by package
250
2.2
1.8
200
150
100
50
1.4
1.0
0.6
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
I
D
I
D
I
D
0
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 10. Drain-to-Source Breakdown Voltage
Fig 9. Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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March 17, 2015
IRFH8303PbF
5.0
4.0
3.0
2.0
1.0
0.0
1600
1400
1200
1000
800
600
400
200
0
I
I
= 50A
D
D
TOP
14A
25A
BOTTOM 50A
T = 125°C
J
T = 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart = 25°C (Single Pulse)
100
Allowed avalanche Current vs avalanche
10
pulsewidth, tav, assuming
Tstart = 125°C.
j = 25°C and
1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
1.0E-02
Fig 14. Single Avalanche Event: Pulse Current vs. Pulse Width
5
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IRFH8303PbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
15V
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
t
I
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 19. Gate Charge Waveform
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Fig 18. Gate Charge Test Circuit
6
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IRFH8303PbF
PQFN 5x6 Outline "B" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
XYWWX
XXXXX
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFH8303PbF
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRFH8303PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Starting TJ = 25°C, L = 0.28mH, RG = 50, IAS = 50A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 100A by source bonding technology.
Revision History
Date
Comments
10/22/2013
3/17/2015
Added the Rdson at Vgs = 4.5V values, on page 2.
Updated package outline and tape and reel on pages 7 and 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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March 17, 2015
相关型号：
IRFH8307TRPBF
Power Field-Effect Transistor, 42A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
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