IRFH8202PBF_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFH8202PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：272K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET
IRFH8202TRPbF
HEXFET® Power MOSFET
VDS
RDS(on) max
(@VGS = 10V)
Qg (typical)
25
V
1.05
m
Ω
52
nC
RG (typical)
1.3
Ω
ID
100
A
PQFN 5X6 mm
(@TC(Bottom) = 25°C)
Applications
• OR-ing MOSFET for 12V (typical) Bus in-Rush Current
• Battery Operated DC Motor Inverter MOSFET
FeaturesandBenefits
Features
Benefits
Low RDSon (<1.05 mΩ)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
⇒
Compatible with Existing Surface Mount Techniques
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Quantity
Base part number
Package Type
Orderable part number
Form
IRFH8202PbF
PQFN 5mm x 6mm
Tape and Reel
4000
IRFH8202TRPbF
Absolute Maximum Ratings
Parameter
Max.
± 20
47
Units
V
VGS
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TA = 70°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
30
100
100
400
3.6
A
I
D @ TC(Bottom) = 25°C
D @ TC(Bottom) = 100°C
I
IDM
Power Dissipation
Power Dissipation
PD @TA = 25°C
PD @TC(Bottom) = 25°C
W
160
Linear Derating Factor
Operating Junction and
0.029
W/°C
°C
TJ
-55 to + 150
TSTG
Storage Temperature Range
Notes through are on page 9
www.irf.com © 2015 International Rectifier
1
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
25
Typ.
–––
0.02
0.90
1.40
1.80
-6.3
–––
–––
–––
–––
–––
110
52
Max.
–––
–––
1.05
1.85
2.35
–––
5.0
Units
V
Conditions
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
–––
1.35
–––
–––
–––
–––
–––
181
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V/°C
Reference to 25°C, ID = 1mA
V
GS = 10V, ID = 50A
VGS = 4.5V, ID = 50A
DS = VGS, ID = 150μA
mΩ
V
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
mV/°C
VDS = 20V, VGS = 0V
VDS = 20V, VGS = 0V, TJ = 125°C
VGS = 20V
μA
150
100
-100
–––
–––
78
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
VGS = -20V
gfs
S
VDS = 13V, ID = 50A
Qg
nC
VGS = 10V, VDS = 13V, ID = 50A
Qg
Total Gate Charge
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
13
–––
–––
–––
–––
–––
–––
2.6
VDS = 13V
VGS = 4.5V
ID = 50A
7.8
17
nC
15
25
36
1.3
28
nC
Ω
VDS = 16V, VGS = 0V
Gate Resistance
td(on)
tr
td(off)
tf
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
VDD = 13V, VGS = 4.5V
ID = 50A
Rise Time
46
ns
Turn-Off Delay Time
Fall Time
30
RG=1.8Ω
19
Ciss
Coss
Crss
Input Capacitance
7174
1758
828
VGS = 0V
pF
Output Capacitance
VDS = 13V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
468
50
Units
mJ
EAS
IAR
A
Diode Characteristics
Parameter
Min.
Typ.
Max.
Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
–––
–––
100
(Body Diode)
showing the
A
G
ISM
Pulsed Source Current
integral reverse
–––
–––
400
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
37
1.0
56
V
TJ = 25°C, IS = 50A, VGS = 0V
ns
nC
TJ = 25°C, IF = 50A, VDD = 13V
di/dt = 200A/μs
Qrr
Reverse Recovery Charge
68
102
Thermal Resistance
Parameter
Typ.
0.5
Max.
0.8
15
Units
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient
RθJC(Bottom)
RθJC (Top)
°C/W
–––
–––
–––
Rθ
35
JA
RθJA (<10s)
21
2
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
60μs
Tj = 150°C
PULSE WIDTH
≤
60μs
≤
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
1000
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50A
D
V
= 10V
GS
100
T
= 150°C
J
10
1
T
= 25°C
J
V
= 15V
DS
≤
60μs PULSE WIDTH
0.1
1
1.5
2
2.5
3
3.5 4.5
4
5
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 3. Typical Transfer Characteristics
14.0
100000
V
= 0V,
= C
f = 1 MHZ
GS
I
= 50A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
12.0
10.0
8.0
V
V
= 20V
= 13V
= C
DS
DS
rss
oss
gd
= C + C
ds
gd
10000
1000
100
C
iss
C
6.0
oss
C
rss
4.0
2.0
0.0
0
20
40
60
80
100 120 140
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
V
G
DS
Fig 5. Typical Capacitance Vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.Gate-to-Source Voltage
3
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
100μsec
1msec
10msec
DC
Limited by Package
T
= 25°C
J
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0.1
1
10
100
, Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
350
3.0
2.5
2.0
1.5
1.0
0.5
300
Limited By Package
250
200
150
100
50
I
= 1.0A
D
ID = 1.0mA
ID = 500μA
ID = 150μA
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T
J
, Temperature ( °C )
C
Fig 9. Maximum Drain Current Vs.
Fig 10. Threshold Voltage Vs. Temperature
Case (Bottom) Temperature
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
4
3
2
1
0
2000
1800
1600
1400
1200
1000
800
I
D
I
= 50A
D
TOP
18A
24A
BOTTOM 50A
T
= 125°C
J
600
T
= 25°C
J
400
200
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
V
Gate -to -Source Voltage (V)
Starting T , Junction Temperature (°C)
GS,
J
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 125°C and
Tstart =25°C (Single Pulse)
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 125°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanch Current vs. Pulsewidth
5
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
I
Ω
0.01
AS
t
p
Fig 16a. Unclamped Inductive Test
Fig 16b. Unclamped Inductive Waveforms
Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18a. Gate Charge Test Circuit
Fig 18b. Gate Charge Waveform
6
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
PQFN 5x6 Outline "B" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
IRFH8202TRPbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DES CRIPTION
Dimens ion des ign to accommodate the component width
Dimension design to accommodate the component lenght
Dimens ion des ign to accommodate the component thicknes s
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between s ucces s ive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension arenominal
Package
Type
R eel
Diameter
(Inch)
QT Y
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com © 2015 International Rectifier Submit Datasheet Feedback
8
Ma1y9, 2015
IRFH8202TRPbF
Qualification information†
Industrial
Qualification level
(per JEDEC JESD47F guidelines )
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-S TD-020D††)
Yes
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.37mH, RG = 25Ω, IAS = 50A.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by production
test capability
Revision History
Date
Comments
IR
•
•
•
•
•
8/1/2013
Added "Strong FET™" above part number on page 1
Updated package outline for “option B” and added package outline for “option G” on page 7
Updated tape and reel on page 8.
4/28/2015
5/19/2015
Updated package outline for “option G” on page 7.
Updated "IFX logo" on page 1 and page 9.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2015 International Rectifier
Submit Datasheet Feedback
Ma1y9, 2015
相关型号：
IRFH8307TRPBF
Power Field-Effect Transistor, 42A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
©2020 ICPDF网 联系我们和版权申明