IRFH8307PBF_15 [INFINEON]
Compatible with Existing Surface Mount Techniques;
| 型号： | IRFH8307PBF_15 |
| 厂家： | 
Infineon |
| 描述： | Compatible with Existing Surface Mount Techniques |
| 文件： | 总9页 (文件大小：522K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFH8307TRPbF
HEXFET® Power MOSFET
VDSS
30
V
RDS(on) max
(@ VGS = 10V)
1.3
m
Qg (typical)
Rg (typical)
50
nC
1.3
ID
100
A
(@TC (Bottom) = 25°C)
PQFN 5X6 mm
Applications
OR-ing MOSFET for 12V (typical) Bus in-Rush Current
Battery Operated DC Motor Inverters
Features
Benefits
Low RDSon (<1.3m)
Low Thermal Resistance to PCB (<0.8°C/W)
Low Profile (<0.9 mm)
Lower Conduction Losses
Enable better thermal dissipation
Increased Power Density
Multi-Vendor Compatibility
Easier Manufacturing
results in
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4000
IRFH8307PbF
PQFN 5mm x 6 mm
IRFH8307TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
± 20
42
Units
VGS
V
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC (Bottom) = 25°C
ID @ TC (Bottom) = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
33
100
100
400
A
PD @TA = 25°C
PD @TC (Bottom) = 25°C
Power Dissipation
3.6
W
Power Dissipation
156
Linear Derating Factor
0.029
W/°C
TJ
Operating Junction and
-55 to + 150
°C
TSTG
Storage Temperature Range
Notes through are on page 9
1
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IRFH8307TRPbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
30
Typ.
–––
0.02
1.1
Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
BVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
–––
–––
1.3
V
–––
–––
–––
1.35
–––
–––
V/°C Reference to 25°C, ID = 1mA
VGS = 10V, ID = 50A
m
1.7
2.1
VGS = 4.5V, ID = 50A
VDS = VGS, ID = 150µA
VGS(th)
VGS(th)
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.80
-6.2
–––
2.35
V
––– mV/°C
5.0
µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ=125°C
VGS = 20V
–––
–––
–––
190
–––
–––
–––
–––
–––
120
150
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
-100
nA
V
GS = -20V
VDS = 15V, ID = 50A
nC VGS = 10V, VDS = 15V, ID = 50A
gfs
Qg
–––
–––
S
Qg
Total Gate Charge
–––
50
75
V
V
DS = 15V
GS = 4.5V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
td(on)
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
–––
–––
–––
–––
–––
–––
–––
–––
12
6.5
16
16
23
30
1.3
26
–––
–––
–––
–––
–––
–––
2.6
nC
ID = 50A
See Fig. 18
nC VDS = 16V, VGS = 0V
Gate Resistance
Turn-On Delay Time
–––
VDD = 15V, VGS = 4.5V
ns ID = 50A
RG=1.8
tr
td(off)
tf
Ciss
Coss
Crss
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
30
31
13
7200
1360
590
–––
–––
–––
–––
–––
–––
See Fig.17
VGS = 0V
pF
VDS = 15V
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
Max.
Units
mJ
A
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
–––
–––
420
50
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
MOSFET symbol
D
IS
Continuous Source Current
(Body Diode)
–––
–––
100
A
400
showing the
G
integral reverse
p-n junction diode.
ISM
Pulsed Source Current
(Body Diode)
–––
–––
S
VSD
trr
Qrr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
34
68
1.0
51
100
V
TJ = 25°C, IS = 50A, VGS = 0V
ns TJ = 25°C, IF = 50A, VDD = 15V
nC
di/dt = 200A/µs
Thermal Resistance
Parameter
Typ.
0.5
Max.
0.8
15
Units
Junction-to-Case
RJC (Bottom)
RJC (Top)
RJA
°C/W
Junction-to-Case
–––
–––
–––
Junction-to-Ambient
Junction-to-Ambient
35
33
RJA (<10s)
2
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IRFH8307TRPbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
5.0V
4.5V
3.5V
3.3V
3.0V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
1
2.7V
1
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
1
0.1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
2.0
1.5
1.0
0.5
1000
100
10
I
= 50A
D
V
= 10V
GS
T = 150°C
J
T = 25°C
J
1
0.1
0.01
V
= 15V
DS
60µs PULSE WIDTH
1.0
2.0
3.0
4.0
5.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
T , Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14
V
C
= 0V,
f = 1 MHZ
GS
I = 50A
D
= C + C , C SHORTED
iss
gs
gd ds
V
V
= 24V
= 15V
DS
DS
12
10
8
C
= C
rss
gd
C
= C + C
ds
oss
gd
Ciss
6
Coss
Crss
4
2
0
100
0
40
80
120
160
1
10
100
Q
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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IRFH8307TRPbF
1000
100
10
1000
100
10
OPERATION IN THIS AREA LIMITED BY R (on)
DS
1msec
100µsec
T
= 150°C
J
T = 25°C
10msec
J
1
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.4
GS
0.1
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
0.1
1
10
100
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
300
250
200
150
100
50
3.0
LIMITED BY PACKAGE
I
I
I
I
= 1.0A
D
D
D
D
= 1.0mA
= 500µA
= 150µA
2.5
2.0
1.5
1.0
0.5
0
-75 -50 -25
0
25 50 75 100 125 150 175
, Temperature ( °C )
25
50
75
100
125
150
175
T
J
T , Case Temperature (°C)
C
Fig 10. Threshold Voltage Vs. Temperature
Fig 9. Maximum Drain Current vs. Case Temperature
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
0.02
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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May 19, 2015
IRFH8307TRPbF
6
5
4
3
2
1
0
2000
1600
1200
800
400
0
I
= 50A
I
D
D
TOP
15A
21A
50A
BOTTOM
T
= 125°C
J
T
= 25°C
J
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On– Resistance vs. Gate Voltage
1000
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 125°C and
Tstart =25°C (Single Pulse)
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 125°C.
10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs. Pulse width
5
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IRFH8307TRPbF
Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Fig 17a. Switching Time Test Circuit
Fig 17b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 18b. Gate Charge Waveform
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Fig 18a. Gate Charge Test Circuit
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6
IRFH8307TRPbF
PQFN 5x6 Outline "B" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note
AN-1136: http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRFH8307TRPbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension design to accommodate the component width
Dimension design to accommodate the component lenght
Dimension design to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between successive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimension are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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8
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IRFH8307TRPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F†† guidelines)
MSL1
PQFN 5mm x 6mm
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D††)
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.337mH, RG = 50, IAS = 50A.
Pulse width 400µs; duty cycle 2%.
R is measured at TJ of approximately 90°C.
When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details:
http://www.irf.com/technical-info/appnotes/an-994.pdf
Calculated continuous current based on maximum allowable junction temperature. Package is limited to 100A by
production test capability.
Revision History
Date
Comments
Updated package outline, on page 7.
03/28/2013
08/01/2013
Added "StrongIRFET™" above part number on page1
Updated package outline for “option B” and added package outline for
“option G” on page 7.
Updated tape and reel on page 8.
Updated package outline for “option G” on page 7.
Updated "IFX logo" on page 1 and page 9.
04/28/2015
05/19/2015
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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© 2015 International Rectifier
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May 19, 2015
相关型号：
IRFH8307TRPBF
Power Field-Effect Transistor, 42A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 6 X 5 MM, HALOGEN FREE AND ROHS COMPLIANT, PLASTIC, QFN-8
INFINEON
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