IRFH8311TRPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
| 型号： | IRFH8311TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
| 文件： | 总9页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH8311PbF
HEXFET® Power MOSFET
VDS
30
V
V
Vgs max
± 20
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
2.1
m
Ω
3.2
30
Qg typ.
nC
A
PQFN 5X6 mm
ID
80
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for high frequency buck converters
FeaturesandBenefits
Features
Benefits
Low Thermal Resistance to PCB (< 1.3°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
results in Increased Power Density
Industry-Standard Pinout
Multi-Vendor Compatibility
⇒
Compatible with Existing Surface Mount Techniques
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Industrial Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Base part number
Package Type
Orderable part number
Note
Form
Quantity
IRFH8311TRPBF PQFN 5mm x 6mm Tape and Reel 4000
IRFH8311TRPBF
IRFH8311TR2PBF
IRFH8311TR2PBF PQFN 5mm x 6mm Tape and Reel
400
EOL notice #259
Absolute Maximum Ratings
Parameter
Max.
30
Units
VDS
Drain-to-Source Voltage
V
V
Gate-to-Source Voltage
± 20
32
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
26
169
107
80
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
400
3.6
96
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
0.029
W/°C
°C
T
T
Operating Junction and
Storage Temperature Range
-55 to + 150
J
STG
Notes through are on page 9
1
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IRFH8311PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGS = 0V, ID = 250µA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
1.35
–––
–––
–––
–––
–––
83
–––
0.021
1.70
2.60
1.8
–––
V
∆ΒVDSS/∆TJ
RDS(on)
–––
V/°C Reference to 25°C, ID = 1.0mA
2.10
3.20
2.35
V
V
V
GS = 10V, ID = 20A
GS = 4.5V, ID = 16A
DS = VGS, ID = 100µA
Ω
m
VGS(th)
∆VGS(th)
IDSS
Gate Threshold Voltage
V
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
-6.6
–––
–––
–––
–––
–––
66
––– mV/°C
µA
1
VDS = 24V, VGS = 0V
150
100
-100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
VDS = 24V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
V
V
GS = 20V
nA
S
GS = -20V
gfs
DS = 10V, ID = 20A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC VGS = 10V, VDS = 15V, ID = 20A
Qg
Total Gate Charge
30
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
9.7
V
DS = 15V
3.9
VGS = 4.5V
ID = 20A
nC
8.6
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
7.8
12.5
21
nC VDS = 16V, VGS = 0V
Gate Resistance
0.6
Ω
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
21
26
VDD = 15V, VGS = 4.5V
ID = 20A
ns
Ω
RG=1.8
Turn-Off Delay Time
Fall Time
21
12
4960
1065
455
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGS = 0V
DS = 10V
ƒ = 1.0MHz
pF
V
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
326
20
A
Diode Characteristics
Parameter
Continuous Source Current
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
IS
–––
–––
80
(Body Diode)
showing the
G
A
ISM
Pulsed Source Current
integral reverse
p-n junction diode.
–––
–––
400
S
(Body Diode)
VSD
trr
Diode Forward Voltage
–––
–––
–––
–––
22
1.0
33
71
V
T
T
= 25°C, I = 20A, V
= 0V
GS
J
J
S
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
= 25°C, I = 20A, VDD = 15V
F
Qrr
ton
47
nC di/dt = 390 A/µs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.3
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
Junction-to-Case
30
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RθJA (<10s)
0.99
2
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IRFH8311PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
7.0V
5.0V
4.5V
3.5V
3.3V
3.0V
2.8V
BOTTOM
BOTTOM
2.8V
2.8V
1
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
1.8
I
= 20A
D
V
= 10V
GS
1.6
1.4
1.2
1.0
0.8
0.6
100
10
T
= 150°C
J
T
= 25°C
= 15V
J
V
DS
≤
60µs PULSE WIDTH
1.0
1
2
3
4
5
6
-60 -40 -20
0
20 40 60 80 100 120140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 20A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
V
= 24V
= 15V
= 6.0V
DS
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
100
1
10
100
0
10 20 30 40 50 60 70 80 90
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFH8311PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
100µsec
J
1msec
Limited by
T
= 25°C
J
Package
10msec
1
Tc = 25°C
DC
Tj = 150°C
Single Pulse
V
= 0V
GS
1.0
0.1
0.0
0.2
V
0.4
0.6
0.8
1.0
1.2
1.4
0
1
10
, Drain-to-Source Voltage (V)
DS
100
, Source-to-Drain Voltage (V)
V
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
180
2.8
160
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
Limited By Package
140
120
100
80
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
60
40
20
0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
, Case Temperature (°C)
T , Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case (Bottom)
4
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IRFH8311PbF
6
5
4
3
2
1
1400
1200
1000
800
600
400
200
0
I
I
= 20A
D
D
TOP
7.0A
9.9A
BOTTOM 20A
T
= 125°C
J
T
= 25°C
J
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig 14b. Unclamped Inductive Waveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
5
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IRFH8311PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH8311PbF
PQFN 5x6 Outline "E" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
PQFN 5x6 Outline "E" Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
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January 7, 2014
IRFH8311PbF
PQFN 5x6 Outline "E" Tape and Reel
NOTE: Controlling dimensions in mm Std reel quantity is 4000 parts.
REEL DIMENSIONS
STANDARD OPTION (QTY 4000)
TR1 OPTION (QTY 400)
TR2
METRIC
MAX
IMPERIAL
METRIC
MAX
178.5
21.5
13.8
2.3
IMPERIAL
MIN
MIN
MAX
7.028
0.846
0.543
0.091
2.598
CODE
MIN
MAX
MIN
A
B
C
D
E
F
12.972
0.823
0.504
0.067
3.819
6.988
0.823
0.520
0.075
2.350
329.5 330.5
13.011 177.5
20.9
12.8
1.7
0.846
0.532
0.091
3.898
20.9
13.2
1.9
21.5
13.5
2.3
97
99
65
66
Ref
13
17.4
14.5
Ref
13
12
G
0.512
0.512
0.571
0.571
14.5
8
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IRFH8311PbF
Qualification information†
Industrial††
(per JE DE C JE S D47F ††† guidelines )
Qualification level
MS L1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JE DE C J-S TD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 1.63mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 80A by source bonding technology.
Revision History
Date
Comment
Idss limits at Tj 25°C is changed to 500µA max and at Tj 125°C it is changed to 5.0mA max. All other
parameters remain unchanged.
Updated ordering information to reflect the End-Of-Life (EOL) of the mini-reel option (EOL notice #259).
Updated data sheet with the new IR corporate template.
•
3/26/2010
1/7/2014
•
•
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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相关型号：
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