IRFH8316TRPBF [INFINEON]
Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET;
| 型号： | IRFH8316TRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, N-Channel, Metal-Oxide Semiconductor FET |
| 文件： | 总9页 (文件大小：300K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFH8316PbF
HEXFET® Power MOSFET
VDS
Vgs max
30
V
V
± 20
RDS(on) max
(@VGS = 10V)
(@VGS = 4.5V)
2.95
m
Ω
4.30
30.0
Qg typ
nC
A
PQFN 5X6 mm
ID
50
(@Tc(Bottom) = 25°C)
Applications
• Synchronous MOSFET for high frequency buck converters
Features and Benefits
Features
Benefits
Low Thermal Resistance to PCB (< 1.7°C/W)
Low Profile (<1.2mm)
Enable better thermal dissipation
results in Increased Power Density
⇒
Industry-Standard Pinout
Compatible with Existing Surface Mount Techniques
Multi-Vendor Compatibility
Easier Manufacturing
RoHS Compliant Containing no Lead, no Bromide and no Halogen
MSL1, Consumer Qualification
Environmentally Friendlier
Increased Reliability
Standard Pack
Orderable part number
Package Type
Note
Form
Quantity
4000
IRFH8316TRPBF
IRFH8316TR2PBF
PQFN 5mm x 6mm
PQFN 5mm x 6mm
Tape and Reel
Tape and Reel
400
EOL notice # 259
Absolute Maximum Ratings
Max.
30
± 20
27
Parameter
Units
VDS
Drain-to-Source Voltage
Gate-to-Source Voltage
V
V
GS
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
I
I
I
I
I
I
@ TA = 25°C
D
D
D
D
D
@ TA = 70°C
21
120
78
@ TC(Bottom) = 25°C
@ TC(Bottom) = 100°C
@ TC = 25°C
A
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
50
490
3.6
59
DM
Power Dissipation
P
P
@TA = 25°C
D
D
W
Power Dissipation
@TC(Bottom) = 25°C
Linear Derating Factor
Operating Junction and
Storage Temperature Range
0.029
-55 to + 150
W/°C
°C
T
T
J
STG
Notes through are on page 9
1
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IRFH8316PbF
Static @ TJ = 25°C (unless otherwise specified)
Conditions
Parameter
Min. Typ. Max. Units
VGS = 0V, ID = 250μA
BVDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
V
Reference to 25°C, ID = 1.0mA
ΔΒVDSS/ΔTJ
RDS(on)
–––
–––
–––
1.2
21
––– mV/°C
2.95
V
V
GS = 10V, ID = 20A
GS = 4.5V, ID = 16A
2.40
3.40
1.7
Ω
m
4.30
2.2
VGS(th)
ΔVGS(th)
IDSS
Gate Threshold Voltage
V
V
DS = VGS, ID = 50μA
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
69
-6.4
–––
–––
–––
–––
–––
59
––– mV/°C
VDS = 24V, VGS = 0V
1
μA
150
V
V
V
V
DS = 24V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
100
nA
GS = -20V
-100
DS = 10V, ID = 20A
gfs
–––
–––
45.0
–––
–––
–––
–––
–––
–––
1.7
–––
–––
–––
–––
–––
–––
–––
S
VGS = 10V, VDS = 15V, ID = 20A
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Qg
Total Gate Charge
30.0
7.0
V
DS = 15V
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
RG
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
VGS = 4.5V
ID = 20A
2.7
nC
9.7
10.6
12.4
18
V
DS = 16V, VGS = 0V
nC
Gate Resistance
1.1
Ω
VDD = 15V, VGS = 4.5V
ID = 20A
td(on)
tr
td(off)
tf
Turn-On Delay Time
19
Rise Time
67
ns
pF
RG=1.8Ω
Turn-Off Delay Time
20
Fall Time
24
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
3610
740
390
V
DS = 10V
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
Avalanche Characteristics
Parameter
Typ.
–––
–––
Max.
160
20
Units
mJ
Single Pulse Avalanche Energy
Avalanche Current
EAS
IAR
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
MOSFET symbol
–––
–––
50
(Body Diode)
Pulsed Source Current
showing the
integral reverse
p-n junction diode.
A
G
ISM
–––
–––
490
S
(Body Diode)
VSD
trr
T = 25°C, I = 20A, V = 0V
J S GS
Diode Forward Voltage
Reverse Recovery Time
–––
–––
–––
–––
14
1.0
21
27
V
T = 25°C, I = 20A, VDD = 15V
ns
J
F
Qrr
ton
Reverse Recovery Charge
Forward Turn-On Time
18
nC di/dt = 380A/μs
Time is dominated by parasitic Inductance
Thermal Resistance
Parameter
Typ.
–––
–––
–––
–––
Max.
1.7
32
Units
Junction-to-Case
RθJC (Bottom)
RθJC (Top)
RθJA
Junction-to-Case
°C/W
Junction-to-Ambient
Junction-to-Ambient
35
RθJA (<10s)
22
2
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IRFH8316PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
5.0V
4.5V
3.5V
3.0V
2.8V
2.5V
2.3V
BOTTOM
BOTTOM
2.3V
1
2.3V
1
≤60μs PULSE WIDTH
60μs
≤
PULSE WIDTH
Tj = 150°C
Tj = 25°C
1
0.1
0.1
1
10
100
0.1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1000
I
= 20A
D
V
= 10V
GS
100
10
1
T
= 150°C
J
T
= 25°C
J
V
= 15V
DS
≤60μs PULSE WIDTH
0.1
-60 -40 -20
0
20 40 60 80 100120 140 160
1
2
3
4
5
6
7
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
14
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I
= 20A
V
V
V
= 24V
= 15V
= 6.0V
D
DS
DS
DS
= C + C , C SHORTED
iss
gs
gd ds
12
10
8
C
C
= C
rss
oss
gd
= C + C
ds
gd
C
iss
6
4
C
C
oss
2
rss
0
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
1
10
, Drain-to-Source Voltage (V)
100
Q
G
V
DS
Fig 5. Typical Capacitance vs.Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage
3
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IRFH8316PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
T
= 150°C
J
1msec
100μsec
T
= 25°C
J
Limited By Source
Bonding Technology
10msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
V
DS
SD
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
2.4
140
Limited By Source
Bonding Technology
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
120
100
80
60
40
20
0
I
I
I
I
= 50μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
25
50
75
100
125
150
-75 -50 -25
0
25 50 75 100 125 150
T , Case Temperature (°C)
C
T
, Temperature ( °C )
J
Fig 9. Maximum Drain Current vs.
Fig 10. Threshold Voltage vs. Temperature
Case(Bottom)Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case(Bottom)
4
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IRFH8316PbF
10
8
700
600
500
400
300
200
100
0
I
= 20A
D
I
D
TOP
5.6A
8.6A
BOTTOM 20A
6
T
= 125°C
= 25°C
J
4
T
J
2
0
5
10
15
20
25
50
75
100
125
150
Starting T , Junction Temperature (°C)
J
V
Gate -to -Source Voltage (V)
GS,
Fig 13. Maximum Avalanche Energy vs. Drain Current
Fig 12. On-Resistance vs. Gate Voltage
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
I
AS
20V
Ω
0.01
t
p
Fig14b. UnclampedInductiveWaveforms
Fig 14a. Unclamped Inductive Test Circuit
RD
VDS
VDS
90%
VGS
D.U.T.
RG
+VDD
-
10%
VGS
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1
td(on)
td(off)
tr
tf
Fig 15a. Switching Time Test Circuit
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Fig 15b. Switching Time Waveforms
5
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IRFH8316PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple
≤ 5%
* VGS = 5V for Logic Level Devices
Fig 16. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® PowerMOSFETs
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 18. Gate Charge Waveform
Fig 17. Gate Charge Test Circuit
6
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IRFH8316PbF
PQFN 5x6 Outline "E" Package Details
PQFN 5x6 Outline "G" Package Details
For more information on board mounting, including footprint and stencil recommendation, please refer to application note AN-1136:
http://www.irf.com/technical-info/appnotes/an-1136.pdf
For more information on package inspection techniques, please refer to application note AN-1154:
http://www.irf.com/technical-info/appnotes/an-1154.pdf
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
7
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IRFH8316PbF
PQFN 5x6 Part Marking
INTERNATIONAL
RECTIFIER LOGO
DATE CODE
PART NUMBER
XXXX
XYWWX
XXXXX
(“4 or 5 digits”)
ASSEMBLY
SITE CODE
(Per SCOP 200-002)
MARKING CODE
(Per Marking Spec)
PIN 1
IDENTIFIER
LOT CODE
(Eng Mode - Min last 4 digits of EATI#)
(Prod Mode - 4 digits of SPN code)
PQFN 5x6 Tape and Reel
REEL DIMENSIONS
TAPE DIMENSIONS
CODE
Ao
DESCRIPTION
Dimension des ign to accommodate the component width
Dimension des ign to accommodate the component lenght
Dimension des ign to accommodate the component thickness
Overall width of the carrier tape
Bo
Ko
W
P
1
Pitch between s ucces s ive cavity centers
QUADRANT ASSIGNMENTS FOR PIN 1 ORIENTATION IN TAPE
Note: All dimens ion are nominal
Package
Type
Reel
Diameter
(Inch)
QTY
Reel
Width
W1
Ao
Bo
Ko
P1
W
Pin 1
(mm)
(mm)
(mm)
(mm)
(mm)
Quadrant
(mm)
5 X 6 PQFN
13
4000
12.4
6.300
5.300
1.20
8.00
12
Q1
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFH8316PbF
Qualification information†
Cons umer††
(per JEDEC JESD47F ††† guidelines )
Qualification level
MS L 1
Moisture Sensitivity Level
RoHS compliant
PQFN 5mm x 6mm
(per JEDEC J-ST D-020D†††
Yes
)
Qualification standards can be found at International Rectifiers web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.796mH, RG = 50Ω, IAS = 20A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
R is measured at TJ of approximately 90°C.
θ
ꢀ When mounted on 1 inch square 2 oz copper pad on 1.5x1.5 in. board of FR-4 material.
Calculated continuous current based on maximum allowable junction temperature.
Current is limited to 50A by source bonding technology.
Revision History
Date
Comment
•
Updated ordering information to reflect the End-Of-life (EOL) of the mini-reel option (EOL notice #259)
5/13/2014
•
•
•
•
Updated Tape and Reel on page 8.
Updated package outline for “option E” and added package outline for “option G” on page 7
Updated "IFX" logo on page 1 & 9.
6/2/2015
Updated tape and reel on page 8.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
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June 2, 2015
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