IRFL024 [INFINEON]
Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A); 功率MOSFET （ VDSS = 55V ， RDS（ON） = 0.075ohm ，ID = 2.8A ）
| 型号： | IRFL024 |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=55V, Rds(on)=0.075ohm, Id=2.8A) |
| 文件： | 总8页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91861A
IRFL024N
HEXFET® Power MOSFET
l Surface Mount
D
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
VDSS = 55V
RDS(on) = 0.075Ω
G
l Fully Avalanche Rated
ID = 2.8A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremelylow on-resistancepersiliconarea. Thisbenefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor,providesthedesignerwithanextremelyefficient
andreliabledeviceforuseinawidevarietyofapplications.
The SOT-223 package is designed for surface-mount
usingvaporphase,infrared,orwavesolderingtechniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
S O T -223
Absolute Maximum Ratings
Parameter
Max.
4.0
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
2.8
A
2.3
11.2
2.1
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
W
W
1.0
8.3
mW/°C
V
VGS
± 20
214
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
2.8
EAR
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
0.1
mJ
V/ns
°C
dv/dt
TJ, TSTG
5.0
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
Junction-to-Amb. (PCB Mount, steady state)*
Typ.
90
Max.
120
Units
RθJA
RθJA
°C/W
Junction-to-Amb. (PCB Mount, steady state)**
50
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
6/15/99
IRFL024N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
––– 0.056 ––– V/°C Reference to 25°C, ID = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.075
Ω
V
S
VGS = 10V, ID = 2.8A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.68A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 125°C
VGS = 20V
2.0
3.0
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 18.3
––– ––– 3.0
––– ––– 7.7
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
ID = 1.68A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 9
–––
8.1 –––
VDD = 28V
––– 13.4 –––
––– 22.2 –––
––– 17.7 –––
––– 400 –––
––– 145 –––
ID = 1.68A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 24Ω
RD = 17Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
60 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 2.8
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
11.2
–––
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.0
V
TJ = 25°C, IS =1.68A, VGS = 0V
TJ = 25°C, IF = 1.68A
––– 35
––– 50
53
75
ns
Qrr
ton
nC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 1.68A, di/dt ≤ 155A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
Starting TJ = 25°C, L = 54.7 mH
RG = 25Ω, IAS = 2.8A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFL024N
100
10
1
100
10
1
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
°
T = 25 C
J
T = 150 C
J
0.1
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
2.0
100
2.8A
=
I
D
1.5
1.0
0.5
0.0
10
°
T = 150 C
J
°
T = 25 C
J
V
= 25V
DS
V
= 10V
20µs PULSE WIDTH
GS
1
4.5
5.0
5.5
6.0 6.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature ( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFL024N
700
20
15
10
5
V
= 0V,
f = 1MHz
C
I
D
= 1.68 A
GS
C
= C + C
SHORTED
ds
V
V
= 44V
= 27V
iss
gs
gd ,
gd
DS
DS
C
= C
gd
600
500
400
300
200
100
0
rss
C
= C + C
oss
ds
C
C
iss
oss
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
0
5
10
15
20
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
100us
1ms
1
10ms
°
T = 150 C
J
°
T = 25 C
J
°
T = 25 C
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
0.1
0.4
0.6
0.8
1.0
1.2
0.1
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFL024N
RD
VDS
Q
G
10V
VGS
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
1000
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T = P
J
x
Z
+ T
thJC C
DM
0.1
0.0001
0.001
0.01
0.1
1
10
100
1000
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFL024N
500
400
300
200
100
0
I
D
TOP
1.3A
2.2A
BOTTOM 2.8A
15V
DRIVER
L
V
D S
D.U .T
AS
R
+
G
V
DD
-
I
A
10V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
Fig 12c. Maximum Avalanche Energy
V
(BR)DSS
Vs. Drain Current
t
p
I
AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRFL024N
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
EXAMPLE : THIS IS AN IRFL014
SOT-223
W AFER
LO T CO DE
PART NUM BER
FL014
314
XXXXXX
BO TTOM
INTERNATIO NAL
RECTIFIER
LOG O
DATE CO DE (YW W )
Y
=
LAST DIG IT OF THE YEAR
W EEK
TOP
W W
=
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7
IRFL024N
Tape & Reel Information
SOT-223 Outline
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
T R
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP .
FE E D D IR E C T IO N
2.30 (.0 90)
2.10 (.0 83)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
N O T E S
1. C O N TR O LLIN G D IM E N S IO N : M ILLIM E TE R .
2. O U T LIN E C O N F O R M S TO E IA -481 E IA -541.
:
&
3. E A C H O 330.00 (13.0 0) R E E L C O N TA IN S 2,500 D E VIC E S.
13.20 (.51 9)
12.80 (.50 4)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
M IN .
18.40 (.724)
M AX .
N O TE S
:
1. O U T LIN E C O M FO R M S TO E IA -418-1.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER ..
3. D IM E N S IO N M E AS U R E D
14.40 (.566)
12.40 (.488)
4
@ HU B.
4. IN CLU D E S F LA N G E D IS TO R T IO N
@
O U T ER ED G E .
3
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http://www.irf.com/
Data and specifications subject to change without notice. 6/99
8
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