IRFL4105TR [INFINEON]
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| 型号： | IRFL4105TR |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 |
| 文件： | 总9页 (文件大小：170K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD- 91381A
IRFL4105
HEXFET® Power MOSFET
l Surface Mount
D
l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l Fast Switching
VDSS = 55V
RDS(on) = 0.045Ω
ID = 3.7A
G
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has the
added advantage of improved thermal performance due to
an enlarged tab for heatsinking. Power dissipation of 1.0W
is possible in a typical surface mount application.
SO T -223
Absolute Maximum Ratings
Parameter
Max.
5.2
Units
ID @ TA = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
Continuous Drain Current, VGS @ 10V**
Continuous Drain Current, VGS @ 10V*
Continuous Drain Current, VGS @ 10V*
Pulsed Drain Current
3.7
A
3.0
30
PD @TA = 25°C
PD @TA = 25°C
Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
2.1
W
W
1.0
8.3
mW/°C
V
VGS
± 20
110
EAS
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
IAR
3.7
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
0.10
5.0
mJ
V/ns
°C
dv/dt
TJ, TSTG
-55 to + 150
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJA
RθJA
Junction-to-Amb. (PCB Mount, steady state)*
90
120
°C/W
Junction-to-Amb. (PCB Mount, steady state)**
50
60
* When mounted on FR-4 board using minimum recommended footprint.
** When mounted on 1 inch square copper board, for comparison with other SMD devices.
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1
1/14/99
IRFL4105
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 0.045
Ω
V
S
VGS = 10V, ID = 3.7A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 1.9A
VDS = 55V, VGS = 0V
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate Threshold Voltage
2.0
3.8
––– 4.0
––– –––
Forward Transconductance
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
–––
–––
–––
–––
–––
–––
–––
23
3.4 5.1
9.8 15
35
ID = 3.7A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
7.1 –––
12 –––
19 –––
12 –––
VDD = 28V
ID = 3.7A
ns
pF
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.0Ω
RD = 7.5Ω, See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 660 –––
––– 230 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
–––
99 –––
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– ––– 1.3
A
showing the
ISM
Pulsed Source Current
(Body Diode)
integral reverse
–––
––– ––– 1.3
––– 55 82
––– 120 170
30
–––
p-n junction diode.
TJ = 25°C, IS = 3.7A, VGS = 0V
TJ = 25°C, IF = 3.7A
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
ns
Qrr
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 3.7A, di/dt ≤ 110A/µs, VDD ≤ V(BR)DSS
,
max. junction temperature. ( See fig. 11 )
TJ ≤ 150°C
VDD = 25V, starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 3.7A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
2
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IRFL4105
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE W IDTH
20µs P ULSE W IDTH
T
T
= 150°C
= 25°C
J
C
A
A
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
D S
Fig 2. Typical Output Characteristics,
Fig 1. Typical Output Characteristics,
TJ = 150oC
TJ = 25oC
2.0
1.5
1.0
0.5
0.0
100
I
= 3.7A
D
TJ = 25°C
TJ = 150°C
10
VDS = 25V
20µs PULSE W IDTH
V
= 10V
G S
1
A
7.0A
4.0
4.5
5.0
5.5
6.0
6.5
-60
-40
-20
J
0
20
40
60
80
100 120 140 160
T
, Junction Tem perature (°C)
VG S , Gate-to-Source Voltage (V)
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
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3
IRFL4105
20
16
12
8
1200
I
= 3.7A
D
V
C
C
C
= 0V ,
f = 1M Hz
G S
iss
V
V
= 24V
= 15V
= C
+ C
+ C
,
C
SHORTED
DS
DS
gs
gd
ds
= C
gd
rss
oss
1000
800
600
400
200
0
= C
ds
gd
C
C
iss
oss
C
rss
4
FOR TE ST CIRCUIT
S EE FIGURE 9
0
A
A
0
10
G
20
30
40
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10µs
100µs
1m s
T
= 150°C
J
T
= 25°C
J
10m s
T
T
= 25°C
= 150°C
S ingle Pulse
A
J
V
= 0V
G S
A
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFL4105
RD
VDS
Q
G
10V
VGS
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Charge
Fig 9a. Basic Gate Charge Waveform
Fig 10a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
V
DS
50KΩ
90%
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
1000
100
10
D
=
0.50
0 .2 0
0.10
0.0 5
0.02
0 .0 1
P
1
D M
t
1
t
2
0.1
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N otes:
1 . D uty factor D
=
t
/ t
2
1
2. Pea k T
10
=
P
x Z
+ T
thJA
D M
J
A
A
10000
0.01
0.00001
0.0001
0.001
0.01
0.1
1
100
1000
t
, R ectang ular Pulse D u ration (se c)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
IRFL4105
300
250
200
150
100
50
I
D
1 5V
TO P
1.7A
3.0A
3.7A
BOTTOM
D RIVER
L
V
G
DS
D.U.T
R
+
V
D D
-
I
A
AS
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
V
= 25V
50
DD
0
A
t
p
25
75
100
125
150
Starting T , Junction Tem perature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
6
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IRFL4105
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
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7
IRFL4105
Package Outline
SOT-223 (TO-261AA) Outline
Part Marking Information
EXAMPLE : THIS IS AN IRFL014
SOT-223
W AFER
PART NUM BER
LO T CO DE
FL014
314
XXXXXX
INTERNATIO NAL
RECTIFIER
LOG O
DATE CO DE (YW W )
Y
=
LAST DIG IT OF THE YEAR
W EEK
BO TTOM
TOP
W W
=
8
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IRFL4105
Tape & Reel Information
SOT-223 Outline
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
T R
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP .
FE E D D IR E C T IO N
2.30 (.0 90)
2.10 (.0 83)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
N O T E S
1. C O N TR O LLIN G D IM E N S IO N : M ILLIM E TE R .
2. O U T LIN E C O N F O R M S TO E IA -481 E IA -541.
:
&
3. E A C H O 330.00 (13.0 0) R E E L C O N TA IN S 2,500 D E VIC E S.
13.20 (.51 9)
12.80 (.50 4)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
M IN .
18.40 (.724)
M AX .
N O TE S
:
1. O U T LIN E C O M FO R M S TO E IA -418-1.
2. C O N TR O LLIN G D IM EN SIO N : M ILLIM ET ER ..
3. D IM E N S IO N M E AS U R E D
14.40 (.566)
12.40 (.488)
4
@ HU B.
4. IN CLU D E S F LA N G E D IS TO R T IO N
@
O U T ER ED G E .
3
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http://www.irf.com/
Data and specifications subject to change without notice. 1/99
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