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IRFL4310 [INFINEON]

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A); 功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.20ohm ，ID = 1.6A ）
IRFL4310
型号： IRFL4310
厂家： Infineon    Infineon
描述：

Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=1.6A)
功率MOSFET （ VDSS = 100V ， RDS（ON） = 0.20ohm ，ID = 1.6A ）

晶体 晶体管 开关 光电二极管
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PD - 91368B  
IRFL4310  
HEXFET® Power MOSFET  
D
VDSS = 100V  
RDS(on) = 0.20W  
ID = 1.6A  
l Surface Mount  
l Dynamic dv/dt Rating  
l Fast Switching  
l Ease of Paralleling  
l Advanced Process Technology  
l Ultra Low On-Resistance  
G
S
Description  
Fifth Generation HEXFETs from International Rectifier  
utilize advanced processing techniques to achieve  
extremely low on-resistance per silicon area. This benefit,  
combined with the fast switching speed and ruggedized  
device design that HEXFET Power MOSFETs are well  
knownfor, providesthedesignerwithanextremelyefficient  
and reliable device for use in a wide variety of applications.  
The SOT-223 package is designed for surface-mount  
usingvaporphase, infrared, orwavesolderingtechniques.  
Its unique package design allows for easy automatic pick-  
and-place as with other SOT or SOIC packages but has  
the added advantage of improved thermal performance  
due to an enlarged tab for heatsinking. Power dissipation  
of 1.0W is possible in a typical surface mount application.  
SOT-223  
Absolute Maximum Ratings  
Parameter  
Max.  
2.2  
1.6  
1.3  
13  
Units  
ID @ TA = 25°C  
ID @ TA = 25°C  
ID @ TA = 70°C  
IDM  
Continuous Drain Current, VGS @ 10V**  
Continuous Drain Current, VGS @ 10V*  
Continuous Drain Current, VGS @ 10V*  
Pulsed Drain Current   
A
PD @TA = 25°C  
PD @TA = 25°C  
Power Dissipation (PCB Mount)**  
Power Dissipation (PCB Mount)*  
Linear Derating Factor (PCB Mount)*  
Gate-to-Source Voltage  
2.1  
1.0  
8.3  
± 20  
47  
W
W
mW/°C  
V
VGS  
EAS  
Single Pulse Avalanche Energy‚  
Avalanche Current  
mJ  
A
IAR  
1.6  
EAR  
Repetitive Avalanche Energy*  
Peak Diode Recovery dv/dt ƒ  
Junction and Storage Temperature Range  
0.10  
5.0  
mJ  
V/ns  
°C  
dv/dt  
TJ,TSTG  
-55 to + 150  
Thermal Resistance  
Parameter  
Junction-to-Amb. (PCB Mount, steady state)*  
Typ.  
93  
Max.  
120  
Units  
RqJA  
RqJA  
°C/W  
Junction-to-Amb. (PCB Mount, steady state)**  
48  
60  
* When mounted on FR-4 board using minimum recommended footprint.  
** When mounted on 1 inch square copper board, for comparison with other SMD devices.  
www.irf.com  
1
5/11/99  
IRFL4310  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
100 ––– –––  
––– 0.12 ––– V/°C Reference to 25°C, ID = 1mA  
Conditions  
V(BR)DSS  
Drain-to-SourceBreakdownVoltage  
V
VGS = 0V, ID = 250µA  
DV(BR)DSS/DTJ Breakdown Voltage Temp. Coefficient  
––– ––– 0.20  
W
VGS = 10V, ID = 1.6A „  
RDS(on)  
StaticDrain-to-SourceOn-Resistance  
VGS(th)  
gfs  
Gate Threshold Voltage  
2.0  
1.5  
––– 4.0  
––– –––  
V
S
VDS = VGS, ID = 250µA  
VDS = 50V, ID = 0.80 A  
VDS = 100V, VGS = 0V  
VDS = 80V, VGS = 0V, TJ = 125°C  
VGS = 20V  
Forward Transconductance  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
µA  
nA  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
Total Gate Charge  
VGS = -20V  
Qg  
–––  
–––  
–––  
–––  
–––  
–––  
17  
2.1 3.1  
7.8 12  
25  
ID = 1.6A  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
nC VDS = 80V  
VGS = 10V, See Fig. 6 and 13 „  
7.8 –––  
18 –––  
VDD = 50V  
RiseTime  
ID = 1.6A  
ns  
pF  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
34  
20  
––– 330 –––  
–––  
RG = 6.2 W  
RD = 31 W, See Fig. 10 „  
VGS = 0V  
–––  
–––  
Ciss  
Coss  
Crss  
Input Capacitance  
Output Capacitance  
–––  
–––  
92 –––  
54 –––  
VDS = 25V  
Reverse Transfer Capacitance  
ƒ = 1.0MHz, See Fig. 5  
Source-Drain Ratings and Characteristics  
Parameter  
ContinuousSourceCurrent  
(Body Diode)  
Min. Typ. Max. Units  
Conditions  
MOSFET symbol  
IS  
––– ––– 0.91  
A
showing the  
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
–––  
13  
–––  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
––– ––– 1.3  
––– 72 110  
––– 210 320  
V
TJ = 25°C, IS = 1.6A, VGS = 0V „  
TJ = 25°C, IF = 1.6A  
ns  
Qrr  
nC di/dt = 100A/µs „  
Notes:  
 Repetitive rating; pulse width limited by  
max. junction temperature. ( See fig. 11 )  
ƒ ISD £ 1.6A, di/dt £ 340A/µs, VDD £ V(BR)DSS  
,
TJ £ 150°C  
‚VDD = 25V, starting TJ = 25°C, L = 9.2 mH  
RG = 25W, IAS = 3.2A. (See Figure 12)  
„ Pulse width £ 300µs; duty cycle £ 2%.  
2
www.irf.com  
IRFL4310  
www.irf.com  
3
IRFL4310  
4
www.irf.com  
IRFL4310  
www.irf.com  
5
IRFL4310  
6
www.irf.com  
IRFL4310  
www.irf.com  
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IRFL4310  
Package Outline  
SOT-223 (TO-261AA) Outline  
Part Marking Information  
EXAMPLE : THIS IS AN IRFL014  
SOT-223  
WAFER  
PART NUMBER  
LOT CODE  
FL014  
314  
XXXXXX  
INTERNATIONAL  
RECTIFIER  
LOGO  
DATE CODE (YWW)  
Y = LAST DIGIT OF THE YEAR  
WW = WEEK  
BOTTOM  
TOP  
8
www.irf.com  
IRFL4310  
Tape & Reel Information  
SOT-223 Outline  
4.10 (.161)  
3.90 (.154)  
0.35 (.013)  
0.25 (.010)  
1.85 (.072)  
1.65 (.065)  
2.05 (.080)  
1.95 (.077)  
TR  
7.55 (.297)  
7.45 (.294)  
16.30 (.641)  
15.70 (.619)  
7.60 (.299)  
7.40 (.292)  
1.60 (.062)  
1.50 (.059)  
TYP.  
FEED DIRECTION  
2.30 (.090)  
2.10 (.083)  
7.10 (.279)  
6.90 (.272)  
12.10 (.475)  
11.90 (.469)  
NOTES :  
1. CONTROLLING DIMENSION: MILLIMETER.  
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.  
13.20 (.519)  
12.80 (.504)  
15.40 (.607)  
11.90 (.469)  
4
330.00  
(13.000)  
MAX.  
50.00 (1.969)  
MIN.  
18.40 (.724)  
MAX.  
NOTES :  
1. OUTLINE COMFORMS TO EIA-418-1.  
2. CONTROLLING DIMENSION: MILLIMETER..  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
14.40 (.566)  
12.40 (.488)  
4
3
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331  
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020  
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200  
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590  
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111  
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086  
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630  
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936  
http://www.irf.com/  
Data and specifications subject to change without notice. 5/99  
www.irf.com  
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