IRFMG40SCV [INFINEON]
Power Field-Effect Transistor,;
| 型号： | IRFMG40SCV |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总7页 (文件大小：470K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-90710C
IRFMG40
1000V, N-CHANNEL
HEXFET MOSFET TECHNOLOGY
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
RDS(on)
ID
IRFMG40
3.9A
3.5
Description
HEXFET MOSFET technology is the key to IR HiRel
advanced line of power MOSFET transistors. The efficient
geometry design achieves very low on-state resistance
combined with high trans conductance. HEXFET transistors
also feature all of the well-established advantages of
MOSFETs, such as voltage control, very fast switching,
ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as
switching power supplies, motor controls, inverters,
choppers, audio amplifiers, high energy pulse circuits, and
virtually any application where high reliability is required.
The HEXFET transistor’s totally isolated package
eliminates the need for additional isolating material
between the device and the heat sink. This improves
thermal efficiency and reduces drain capacitance.
Features
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Dynamic dv/dt Rating
Light Weight
Absolute Maximum Ratings
Parameter
Units
3.9
ID @ VGS = 10V, TC = 25°C Continuous Drain Current
ID @ VGS = 10V, TC = 100°C Continuous Drain Current
2.5
16
A
IDM
Pulsed Drain Current
125
1.0
W
W/°C
V
PD @TC = 25°C
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
± 20
530
VGS
EAS
IAR
mJ
A
3.9
12.5
mJ
V/ns
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
1.0
-55 to + 150
TSTG
°C
g
300 (0.063 in. /1.6 mm from case for 10s)
9.3 (Typical)
Weight
For Footnotes refer to the page 2.
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IRFMG40
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Min. Typ. Max. Units
Test Conditions
VGS = 0V, ID = 1.0mA
V/°C Reference to 25°C, ID = 1.0mA
BVDSS
1000 ––– –––
V
BVDSS/TJ
–––
1.4
–––
3.5
4.2
4.0
Static Drain-to-Source On-State
––– –––
––– –––
VGS = 10V, ID = 2.5A
RDS(on)
VGS(th)
Resistance
VGS = 10V, ID = 3.9A
Gate Threshold Voltage
Forward Transconductance
2.0
3.3
––– –––
–––
V
S
VDS = VGS, ID = 250µA
Gfs
IDSS
––– –––
25
V
DS = 15V, ID = 2.5A
VDS = 800V, VGS = 0V
DS = 800V,VGS = 0V,TJ =125°C
VGS = 20V
GS = -20V
Zero Gate Voltage Drain Current
µA
nA
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 120
V
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
V
QG
QGS
QGD
td(on)
tr
ID = 3.9A
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
––– –––
––– –––
––– –––
––– –––
12
75
30
50
nC
ns
VDS = 400V
VGS = 10V
VDD = 400V
ID = 3.9A
td(off)
tf
––– ––– 170
RG = 9.1
VGS = 10V
––– –––
50
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/0.25 in
from package) with Source wire internally
bonded from Source pin to Drain pad
Ls +LD
Total Inductance
–––
6.8
–––
nH
pF
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
––– 1700 –––
––– 250 –––
––– 100 –––
VGS = 0V
VDS = 25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Test Conditions
IS
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
––– –––
––– –––
––– –––
3.9
16
A
ISM
VSD
trr
1.8
V
TJ = 25°C,IS = 3.9A, VGS = 0V
TJ = 25°C, IF = 3.9A, VDD ≤50V
di/dt = 100A/µs
Reverse Recovery Time
––– ––– 1000
––– ––– 5.6
ns
µC
Qrr
Reverse Recovery Charge
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
ton
Forward Turn-On Time
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink
Junction-to-Ambient (Typical socket mount)
Min.
–––
Typ.
–––
Max.
1.0
Units
RJC
RCS
RJA
–––
–––
0.21
–––
–––
°C/W
48
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
VDD = 50V, starting TJ = 25°C, L = 69mH, Peak IL = 3.9A, VGS = 10V
ISD 3.9A, di/dt 100A/µs, VDD 1000V, TJ 150°C
Pulse width 300 µs; Duty Cycle 2%.
Equipment limitation.
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IRFMG40
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
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IRFMG40
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 10. Maximum Avalanche Energy
Fig 9. Maximum Drain Current Vs. Case Temperature
Vs. Drain Current
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFMG40
V
(BR)DSS
t
p
I
AS
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
Fig 14a. Switching Time Test Circuit
Fig 14b. Switching Time Waveforms
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IRFMG40
Case Outline and Dimensions — TO-254AA
0.12 [.005]
13.84 [.545]
13.59 [.535]
6.60 [.260]
6.32 [.249]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
A
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
1
2
3
14.48 [.570]
12.95 [.510]
C
0.84 [.033]
MAX.
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B A
NOTES:
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENSION: INCH.
1 = DRAIN
2 = SOURCE
3 = GATE
4. CONFORMS TO JEDEC OUTLINE TO-254AA.
BERYLLIA WARNING PER MIL-PRF-19500
Package containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which
will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce
fumes containing beryllium.
IR HiRel Headquarters: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
IR HiRel Leominster: 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
IR HiRel San Jose: 2520 Junction Avenue, San Jose, California 95134, USA Tel: (408) 434-5000
Data and specifications subject to change without notice.
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IRFMG40
IMPORTANT NOTICE
The information given in this document shall be in no event regarded as guarantee of conditions or characteristic. The
data contained herein is a characterization of the component based on internal standards and is intended to
demonstrate and provide guidance for typical part performance. It will require further evaluation, qualification and
analysis to determine suitability in the application environment to confirm compliance to your system requirements.
With respect to any example hints or any typical values stated herein and/or any information regarding the application of
the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind including without
limitation warranties on non- infringement of intellectual property rights and any third party.
In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this
document and any applicable legal requirements, norms and standards concerning customer’s product and any use of
the product of Infineon Technologies in customer’s applications.
The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of any
customer’s technical departments to evaluate the suitability of the product for the intended applications and the
completeness of the product information given in this document with respect to applications.
For further information on the product, technology, delivery terms and conditions and prices, please contact your local
sales representative or go to (www.infineon.com/hirel).
WARNING
Due to technical requirements products may contain dangerous substances. For information on the types in question,
please contact your nearest Infineon Technologies office.
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