IRFMG50PBF [INFINEON]
暂无描述;
| 型号： | IRFMG50PBF |
| 厂家： | 
Infineon |
| 描述： | 暂无描述 晶体 晶体管 功率场效应晶体管 开关 脉冲 局域网 |
| 文件： | 总7页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 90711B
IRFMG50
1000V, N-CHANNEL
POWER MOSFET
THRU-HOLE (TO-254AA)
HEXFET® MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on)
IRFMG50 2.0Ω
ID
5.6A
HEXFET® MOSFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors. The
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan-
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
stability. They are well-suited for applications such as switch-
ing power supplies, motor controls, inverters, choppers,
audio amplifiers, high energy pulse circuits, and virtually
any application where high reliability is required. The
HEXFET transistor’s totally isolated package eliminates the
need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
TO-254AA
Features:
n
n
n
n
n
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Electrically Isolated
Ceramic Eyelets
Absolute Maximum Ratings
Parameter
Units
I
@ V
@ V
= 10V, T = 25°C Continuous Drain Current
5.6
3.5
D
GS
C
A
I
= 10V, T = 100°C Continuous Drain Current
C
D
GS
I
Pulsed Drain Current ➀
Max. Power Dissipation
Linear Derating Factor
22
DM
@ T = 25°C
P
D
150
W
W/°C
V
C
1.2
V
Gate-to-Source Voltage
±20
GS
E
Single Pulse Avalanche Energy ➀
Avalanche Current ➀
860
mJ
A
AS
I
5.6
AR
E
Repetitive Avalanche Energy ➀
Peak Diode Recovery dv/dt ➀
Operating Junction
15
mJ
V/ns
AR
dv/dt
1.0
T
-55 to 150
J
T
Storage Temperature Range
oC
g
STG
Lead Temperature
Weight
300(0.063in./1.6mm from case for 10 sec)
9.3 (Typical)
For footnotes refer to the last page
www.irf.com
1
4/17/01
IRFMG50
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
DSS
Drain-to-Source Breakdown Voltage
1000
—
—
—
—
V
V
= 0V, I = 1.0mA
D
GS
Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
1.4
V/°C
DSS
J
D
Voltage
R
Static Drain-to-Source On-State
Resistance
—
—
2.0
Ω
V
= 10V, I = 3.5A
GS D
DS(on)
➀
V
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
5.2
—
—
—
—
—
4.0
—
V
V
= V , I = 250µA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
> 15V, I
= 3.5A ➀
DS
DS
I
25
250
V
= 800V ,V =0V
DSS
DS GS
µA
—
V
= 800V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
6.8
100
-100
200
20
V
= 20V
= -20V
GSS
GSS
GS
nA
nC
V
GS
Q
Q
Q
V
=10V, I =5.6A
GS D
g
gs
gd
d(on)
r
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
V
= 400V
DS
—
t
t
t
t
30
V
DD
= 400V, I = 5.6A,
D
44
210
60
R
G
= 2.35Ω
ns
d(off)
f
L
+ L
Total Inductance
—
S
D
Measured from Drain lead (6mm /0.25in. from
package)toSourcelead(6mm/0.25in. from
package)
nH
C
C
C
Input Capacitance
—
—
—
—
2400
240
80
—
—
—
—
V
= 0V, V = 25V
DS
f = 1.0MHz
iss
oss
rss
GS
Output Capacitance
pF
Reverse Transfer Capacitance
Drain-to-Case Capacitance
C
DC
12
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
V
t
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) ➀
Diode Forward Voltage
—
—
—
—
—
—
—
—
—
—
5.6
22
1.8
S
A
SM
V
T = 25°C, I = 5.6A, V
= 0V ➀
j
SD
rr
S
GS
Reverse Recovery Time
1200 nS
8.4 µC
T = 25°C, I = 5.6A, di/dt ≤ 100A/µs
j
F
Q
Reverse Recovery Charge
V
DD
≤ 50V ➀
RR
t
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
on
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
R
Junction-to-Case
Case-to-sink
—
—
—
—
0.21
—
0.83
—
thJC
thCS
thJA
°C/W
Junction-to-Ambient
48
Typical socket mount
For footnotes refer to the last page
2
www.irf.com
IRFMG50
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs.Temperature
www.irf.com
3
IRFMG50
3
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
ForwardVoltage
4
www.irf.com
IRFMG50
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
CaseTemperature
Fig 10b. Switching Time Waveforms
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
5
IRFMG50
15V
DRIVER
L
V
D S
D.U .T
AS
.
R
G
+
-
V
D D
I
A
20V
1
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)D SS
Fig 12c. Maximum Avalanche Energy
t
p
Vs. DrainCurrent
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
0
1V
Q
G
.3µF
10 V
+
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
6
www.irf.com
IRFMG50
Footnotes:
➀➀ I
SD
≤ 5.6A, di/dt ≤ 120A/µs,
➀➀ Repetitive Rating; Pulse width limited by
V
≤ 1000V, T ≤ 150°C
maximum junction temperature.
DD
J
➀➀➀V
= 50V, starting T = 25°C, L= 54mH
DD
J
➀➀➀Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Peak I = 5.6A, V
= 10V
GS
L
Case Outline and Dimensions — TO-254AA
.12
( .005 )
13.84
13.59
(
(
.545
.535
)
)
-B-
6.60
6.32
(
(
.260
.249
)
)
3.78
3.53
(
(
.149
.139
)
)
1.27
1.02
(
(
.050
.040
)
)
-A-
20.32
20.07
(
(
.800
.790
)
)
17.40
16.89
(
(
.685
.665
)
)
13.84
13.59
(
(
.545
.535
)
)
LEG END
1
2
3
-
-
-
COLL
EMIT
GATE
31.40
30.39
(
(
1.235
1.199
)
)
1
2
3
-C-
1.14
0.89
(
(
.045
.035
)
)
3X
3.81
(
.150
)
3.81
( .150 )
2X
.50
.25
(
(
.020
.010
)
)
M
M
C
C
A
M
B
NO TES:
LEGEND
1- DRAIN
2- SOURCE
3- GATE
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined or have other operations performed on them
which will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will
produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/01
www.irf.com
7
相关型号：
IRFML8244
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFML8244TRPBF
HEXFETpower MOSFET Multi-vendor compatibility Easier manufacturing Easier manufacturing
TYSEMI
©2020 ICPDF网 联系我们和版权申明