IRFP22N50APBF [INFINEON]
HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A ); HEXFET功率MOSFET （ VDSS = 500V ， RDS （ ON）最大值= 0.23ヘ， ID = 22A ）
| 型号： | IRFP22N50APBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A ) |
| 文件： | 总8页 (文件大小：192K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95004
IRFP22N50APbF
SMPS MOSFET
HEXFET® Power MOSFET
Applications
VDSS
500V
RDS(on) max
ID
22A
l Switch Mode Power Supply (SMPS)
l UninterruptIble Power Supply
l High Speed Power Switching
l Lead-Free
0.23Ω
Benefits
l Low Gate Charge Qg results in Simple
Drive Requirement
l Improved Gate, Avalanche and Dynamic
dv/dt Ruggedness
l Fully Characterized Capacitance and
Avalanche Voltage and Current
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
D @ TC = 100°C
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
22
I
14
88
A
IDM
PD @TC = 25°C
Power Dissipation
277
W
W/°C
V
Linear Derating Factor
2.2
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
4.8
V/ns
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typical SMPS Topologies
l Full Bridge Converters
l Power Factor Correction Boost
Notes through ꢀ are on page 8
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1
2/11/04
IRFP22N50APbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
500 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.23
2.0 ––– 4.0
Ω
V
VGS = 10V, ID = 13A
VDS = VGS, ID = 250µA
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 30V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
µA
IDSS
IGSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
12 ––– –––
Conditions
VDS = 50V, ID = 13A
ID = 22A
gfs
S
Qg
––– ––– 120
––– ––– 32
––– ––– 52
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 400V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
26 –––
94 –––
47 –––
47 –––
VDD = 250V
ID = 22A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 11Ω,See Fig. 10
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Input Capacitance
––– 3450 –––
––– 513 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
–––
27 –––
pF
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 400V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 400V ꢀ
––– 4935 –––
––– 137 –––
––– 264 –––
Coss eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
1180
22
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
28
mJ
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.24
–––
Max.
0.45
–––
40
Units
RθJC
RθCS
RθJA
°C/W
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
22
88
––– –––
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 570 850
––– 6.1 9.2
V
TJ = 25°C, IS = 22A, VGS = 0V
ns
TJ = 25°C, IF = 22A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP22N50APbF
100
10
1
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
1
4.5V
0.1
4.5V
20µs PULSE WIDTH
°
T = 150 C
J
20µs PULSE WIDTH
°
T = 25 C
J
0.01
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.0
22A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 50V
DS
20µs PULSE WIDTH
V
=10V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
5.0
6.0
7.0
8.0 9.0
10.0
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFP22N50APbF
20
16
12
8
100000
I
D
= 22A
V
C
C
C
= 0V,
f = 1MHz
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
gd
ds
V
= 400V
= 250V
= 100V
DS
= C
V
V
DS
= C + C
ds
gd
10000
1000
100
10
DS
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
1
0
A
0
20
40
60
80
100
120
1
10
100
1000
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 150 C
J
10
10us
100us
1ms
°
T = 25 C
J
1
°
T = 25 C
C
10ms
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
0.1
0.2
1
0.6
1.0
1.4
1.8
10
100
1000
10000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP22N50APbF
RD
25
20
15
10
5
VDS
VGS
DꢀUꢀTꢀ
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
P
0.02
0.01
DM
0.01
0.001
SINGLE PULSE
(THERMAL RESPONSE)
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T =P
J
t / t
1
x Z
2
+ T
thJC C
DM
0.00001
0.0001
0.001
0.01
0.1
1
10
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP22N50APbF
3000
2500
2000
1500
1000
500
15V
I
D
TOP
9.8A
14A
BOTTOM 22A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
640
Q
Q
GD
GS
630
620
610
600
590
580
570
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
.3µF
+
V
DS
D.U.T.
-
A
0
4
8
12
16
20
24
V
GS
I
, Avalanche Current (A)
av
3mA
I
I
D
G
Current Sampling Resistors
Fig 12d. Typical Drain-to-Source Voltage
Vs. Avalanche Current
Fig 13b. Gate Charge Test Circuit
6
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IRFP22N50APbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as DꢀUꢀTꢀ
• ISD controlled by Duty Factor "D"
• DꢀUꢀTꢀ - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP22N50APbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
NOTES:
5.50 (.217)
4.50 (.177)
2X
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
CONFORMS TO JEDEC OUTLINE
TO-247-AC.
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LEAD ASSIGNMENTS
Hexfet
IGBT
1 -Gate1-Gate
2.40 (.094)
2.00 (.079)
2X
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
2 - Drain2 - Collector
3 - Source 3 - Emitter
2.60 (.102)
2.20 (.087)
0.25 (.010)
A
C
M
S
5.45 (.215)
4 - Drain
4 - Collector
3.40 (.133)
3.00 (.118)
2X
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
IRFPE30
035H
57
56
DATE CODE
YEAR 0 = 2000
WE EK 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Notes:
Repetitive rating; pulse width limited by
Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
Starting TJ = 25°C, L = 4.87mH
as Coss while VDS is rising from 0 to 80% VDSS
RG = 25Ω, IAS = 22A. (See Figure 12a)
ISD ≤ 22A, di/dt ≤ 190A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
8
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