IRFP22N50APBF [INFINEON]

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A ); HEXFET功率MOSFET ( VDSS = 500V , RDS ( ON)最大值= 0.23ヘ, ID = 22A )
IRFP22N50APBF
型号: IRFP22N50APBF
厂家: Infineon    Infineon
描述:

HEXFET Power MOSFET ( VDSS = 500V , RDS(on)max = 0.23ヘ , ID = 22A )
HEXFET功率MOSFET ( VDSS = 500V , RDS ( ON)最大值= 0.23ヘ, ID = 22A )

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PD - 95004  
IRFP22N50APbF  
SMPS MOSFET  
HEXFET® Power MOSFET  
Applications  
VDSS  
500V  
RDS(on) max  
ID  
22A  
l Switch Mode Power Supply (SMPS)  
l UninterruptIble Power Supply  
l High Speed Power Switching  
l Lead-Free  
0.23Ω  
Benefits  
l Low Gate Charge Qg results in Simple  
Drive Requirement  
l Improved Gate, Avalanche and Dynamic  
dv/dt Ruggedness  
l Fully Characterized Capacitance and  
Avalanche Voltage and Current  
TO-247AC  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
ID @ TC = 25°C  
D @ TC = 100°C  
Continuous Drain Current, VGS @ 10V  
Continuous Drain Current, VGS @ 10V  
Pulsed Drain Current   
22  
I
14  
88  
A
IDM  
PD @TC = 25°C  
Power Dissipation  
277  
W
W/°C  
V
Linear Derating Factor  
2.2  
VGS  
dv/dt  
TJ  
Gate-to-Source Voltage  
± 30  
Peak Diode Recovery dv/dt ƒ  
Operating Junction and  
4.8  
V/ns  
-55 to + 150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 seconds  
Mounting torqe, 6-32 or M3 screw  
°C  
300 (1.6mm from case )  
10 lbf•in (1.1N•m)  
Typical SMPS Topologies  
l Full Bridge Converters  
l Power Factor Correction Boost  
Notes  through are on page 8  
www.irf.com  
1
2/11/04  
IRFP22N50APbF  
Static @ TJ = 25°C (unless otherwise specified)  
Parameter  
Drain-to-Source Breakdown Voltage  
Min. Typ. Max. Units  
500 ––– –––  
Conditions  
VGS = 0V, ID = 250µA  
V(BR)DSS  
V
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient ––– 0.55 ––– V/°C Reference to 25°C, ID = 1mA†  
RDS(on)  
VGS(th)  
Static Drain-to-Source On-Resistance  
Gate Threshold Voltage  
––– ––– 0.23  
2.0 ––– 4.0  
V
VGS = 10V, ID = 13A „  
VDS = VGS, ID = 250µA  
VDS = 500V, VGS = 0V  
VDS = 400V, VGS = 0V, TJ = 125°C  
VGS = 30V  
––– ––– 25  
––– ––– 250  
––– ––– 100  
––– ––– -100  
µA  
IDSS  
IGSS  
Drain-to-Source Leakage Current  
Gate-to-Source Forward Leakage  
Gate-to-Source Reverse Leakage  
nA  
VGS = -30V  
Dynamic @ TJ = 25°C (unless otherwise specified)  
Parameter  
Forward Transconductance  
Total Gate Charge  
Min. Typ. Max. Units  
12 ––– –––  
Conditions  
VDS = 50V, ID = 13A  
ID = 22A  
gfs  
S
Qg  
––– ––– 120  
––– ––– 32  
––– ––– 52  
Qgs  
Qgd  
td(on)  
tr  
Gate-to-Source Charge  
Gate-to-Drain ("Miller") Charge  
Turn-On Delay Time  
Rise Time  
nC VDS = 400V  
VGS = 10V, See Fig. 6 and 13 „  
–––  
–––  
–––  
–––  
26 –––  
94 –––  
47 –––  
47 –––  
VDD = 250V  
ID = 22A  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
RG = 4.3Ω  
RD = 11,See Fig. 10 „  
VGS = 0V  
Ciss  
Coss  
Crss  
Coss  
Coss  
Input Capacitance  
––– 3450 –––  
––– 513 –––  
Output Capacitance  
Reverse Transfer Capacitance  
Output Capacitance  
Output Capacitance  
Effective Output Capacitance  
VDS = 25V  
–––  
27 –––  
pF  
ƒ = 1.0MHz, See Fig. 5  
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz  
VGS = 0V, VDS = 400V, ƒ = 1.0MHz  
VGS = 0V, VDS = 0V to 400V ꢀ  
––– 4935 –––  
––– 137 –––  
––– 264 –––  
Coss eff.  
Avalanche Characteristics  
Parameter  
Single Pulse Avalanche Energy‚  
Typ.  
Max.  
1180  
22  
Units  
mJ  
EAS  
IAR  
–––  
–––  
–––  
Avalanche Current  
A
EAR  
Repetitive Avalanche Energy  
28  
mJ  
Thermal Resistance  
Parameter  
Junction-to-Case  
Case-to-Sink, Flat, Greased Surface  
Junction-to-Ambient  
Typ.  
–––  
0.24  
–––  
Max.  
0.45  
–––  
40  
Units  
RθJC  
RθCS  
RθJA  
°C/W  
Diode Characteristics  
Parameter  
Min. Typ. Max. Units  
Conditions  
D
S
IS  
Continuous Source Current  
(Body Diode)  
MOSFET symbol  
22  
88  
––– –––  
––– –––  
showing the  
A
G
ISM  
Pulsed Source Current  
(Body Diode)   
integral reverse  
p-n junction diode.  
VSD  
trr  
Diode Forward Voltage  
Reverse Recovery Time  
Reverse RecoveryCharge  
Forward Turn-On Time  
––– ––– 1.5  
––– 570 850  
––– 6.1 9.2  
V
TJ = 25°C, IS = 22A, VGS = 0V „  
ns  
TJ = 25°C, IF = 22A  
Qrr  
ton  
µC di/dt = 100A/µs „  
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)  
2
www.irf.com  
IRFP22N50APbF  
100  
10  
1
100  
10  
VGS  
15V  
VGS  
15V  
TOP  
TOP  
10V  
10V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
8.0V  
7.0V  
6.0V  
5.5V  
5.0V  
BOTTOM 4.5V  
BOTTOM 4.5V  
1
4.5V  
0.1  
4.5V  
20µs PULSE WIDTH  
°
T = 150 C  
J
20µs PULSE WIDTH  
°
T = 25 C  
J
0.01  
0.1  
1
10  
100  
0.1  
1
10  
100  
V
, Drain-to-Source Voltage (V)  
V
, Drain-to-Source Voltage (V)  
DS  
DS  
Fig 1. Typical Output Characteristics  
Fig 2. Typical Output Characteristics  
100  
3.0  
22A  
=
I
D
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
°
T = 150 C  
J
10  
°
T = 25 C  
J
1
V
= 50V  
DS  
20µs PULSE WIDTH  
V
=10V  
GS  
0.1  
4.0  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
5.0  
6.0  
7.0  
8.0 9.0  
10.0  
T , Junction Temperature ( C)  
J
V
, Gate-to-Source Voltage (V)  
GS  
Fig 3. Typical Transfer Characteristics  
Fig 4. Normalized On-Resistance  
Vs. Temperature  
www.irf.com  
3
IRFP22N50APbF  
20  
16  
12  
8
100000  
I
D
= 22A  
V
C
C
C
= 0V,  
f = 1MHz  
GS  
iss  
rss  
oss  
= C + C  
,
C
SHORTED  
gs  
gd  
gd  
ds  
V
= 400V  
= 250V  
= 100V  
DS  
= C  
V
V
DS  
= C + C  
ds  
gd  
10000  
1000  
100  
10  
DS  
C
iss  
C
oss  
C
rss  
4
FOR TEST CIRCUIT  
SEE FIGURE 13  
1
0
A
0
20  
40  
60  
80  
100  
120  
1
10  
100  
1000  
Q , Total Gate Charge (nC)  
V
, Drain-to-Source Voltage (V)  
G
DS  
Fig 6. Typical Gate Charge Vs.  
Fig 5. Typical Capacitance Vs.  
Gate-to-Source Voltage  
Drain-to-Source Voltage  
1000  
100  
10  
100  
OPERATION IN THIS AREA LIMITED  
BY R  
DS(on)  
°
T = 150 C  
J
10  
10us  
100us  
1ms  
°
T = 25 C  
J
1
°
T = 25 C  
C
10ms  
°
T = 150 C  
Single Pulse  
J
V
= 0 V  
GS  
0.1  
0.2  
1
0.6  
1.0  
1.4  
1.8  
10  
100  
1000  
10000  
V
,Source-to-Drain Voltage (V)  
V
, Drain-to-Source Voltage (V)  
SD  
DS  
Fig 8. Maximum Safe Operating Area  
Fig 7. Typical Source-Drain Diode  
Forward Voltage  
4
www.irf.com  
IRFP22N50APbF  
RD  
25  
20  
15  
10  
5
VDS  
VGS  
DꢀUꢀTꢀ  
RG  
+VDD  
-
10V  
Pulse Width ≤ 1 µs  
Duty Factor ≤ 0.1 %  
Fig 10a. Switching Time Test Circuit  
V
DS  
90%  
0
25  
50  
75  
100  
125  
150  
°
T , Case Temperature ( C)  
C
10%  
V
GS  
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.  
d(on)  
d(off)  
Case Temperature  
Fig 10b. Switching Time Waveforms  
1
D = 0.50  
0.20  
0.10  
0.05  
0.1  
P
0.02  
0.01  
DM  
0.01  
0.001  
SINGLE PULSE  
(THERMAL RESPONSE)  
t
1
t
2
Notes:  
1. Duty factor D =  
2. Peak T =P  
J
t / t  
1
x Z  
2
+ T  
thJC C  
DM  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t , Rectangular Pulse Duration (sec)  
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case  
www.irf.com  
5
IRFP22N50APbF  
3000  
2500  
2000  
1500  
1000  
500  
15V  
I
D
TOP  
9.8A  
14A  
BOTTOM 22A  
DRIVER  
+
L
V
DS  
D.U.T  
AS  
R
G
V
DD  
-
I
A
20V  
0.01  
t
p
Fig 12a. Unclamped Inductive Test Circuit  
V
(BR)DSS  
t
p
0
25  
50  
75  
100  
125  
150  
°
Starting T , Junction Temperature ( C)  
J
I
AS  
Fig 12c. Maximum Avalanche Energy  
Fig 12b. Unclamped Inductive Waveforms  
Vs. Drain Current  
Q
G
10 V  
640  
Q
Q
GD  
GS  
630  
620  
610  
600  
590  
580  
570  
V
G
Charge  
Fig 13a. Basic Gate Charge Waveform  
Current Regulator  
Same Type as D.U.T.  
50KΩ  
.2µF  
12V  
.3µF  
+
V
DS  
D.U.T.  
-
A
0
4
8
12  
16  
20  
24  
V
GS  
I
, Avalanche Current (A)  
av  
3mA  
I
I
D
G
Current Sampling Resistors  
Fig 12d. Typical Drain-to-Source Voltage  
Vs. Avalanche Current  
Fig 13b. Gate Charge Test Circuit  
6
www.irf.com  
IRFP22N50APbF  
Peak Diode Recovery dv/dt Test Circuit  
+
ƒ
-
Circuit Layout Considerations  
Low Stray Inductance  
Ground Plane  
Low Leakage Inductance  
Current Transformer  
DꢀUꢀT  
+
‚
-
„
-
+

RG  
dv/dt controlled by RG  
+
-
Driver same type as DꢀUꢀTꢀ  
ISD controlled by Duty Factor "D"  
DꢀUꢀTꢀ - Device Under Test  
VDD  
Driver Gate Drive  
P.W.  
P.W.  
Period  
Period  
D =  
V
=10V  
*
GS  
D.U.T. I Waveform  
SD  
Reverse  
Recovery  
Current  
Body Diode Forward  
Current  
di/dt  
D.U.T. V Waveform  
DS  
Diode Recovery  
dv/dt  
V
DD  
Re-Applied  
Voltage  
Body Diode  
Forward Drop  
Inductor Curent  
I
SD  
Ripple 5%  
* VGS = 5V for Logic Level Devices  
Fig 14. For N-Channel HEXFET® Power MOSFETs  
www.irf.com  
7
IRFP22N50APbF  
TO-247AC Package Outline  
Dimensions are shown in millimeters (inches)  
- D -  
3.65 (.143)  
3.55 (.140)  
5.30 (.209)  
4.70 (.185)  
15.90 (.626)  
15.30 (.602)  
0.25 (.010)  
D
M
B
M
2.50 (.089)  
- B -  
- A -  
1.50 (.059)  
5.50 (.217)  
4
20.30 (.800)  
19.70 (.775)  
NOTES:  
5.50 (.217)  
4.50 (.177)  
2X  
1
DIMENSIONING & TOLERANCING  
PER ANSI Y14.5M, 1982.  
CONTROLLING DIMENSION : INCH.  
CONFORMS TO JEDEC OUTLINE  
TO-247-AC.  
1
2
3
2
3
- C -  
14.80 (.583)  
14.20 (.559)  
4.30 (.170)  
3.70 (.145)  
LEAD ASSIGNMENTS  
Hexfet  
IGBT  
1 -Gate1-Gate  
2.40 (.094)  
2.00 (.079)  
2X  
0.80 (.031)  
0.40 (.016)  
1.40 (.056)  
1.00 (.039)  
3X  
3X  
2 - Drain2 - Collector  
3 - Source 3 - Emitter  
2.60 (.102)  
2.20 (.087)  
0.25 (.010)  
A
C
M
S
5.45 (.215)  
4 - Drain  
4 - Collector  
3.40 (.133)  
3.00 (.118)  
2X  
TO-247AC Part Marking Information  
EXAMPLE: THIS IS AN IRFPE30  
WITH ASSEMBLY  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
LOT CODE 5657  
ASSEMBLED ON WW 35, 2000  
IN THE ASSEMBLY LINE "H"  
IRFPE30  
035H  
57  
56  
DATE CODE  
YEAR 0 = 2000  
WE EK 35  
Note: "P" in assembly line  
position indicates "Lead-Free"  
ASSEMBLY  
LOT CODE  
LINE H  
Notes:  
 Repetitive rating; pulse width limited by  
„ Pulse width 300µs; duty cycle 2%.  
max. junction temperature. (See fig. 11)  
Coss eff. is a fixed capacitance that gives the same charging time  
‚ Starting TJ = 25°C, L = 4.87mH  
as Coss while VDS is rising from 0 to 80% VDSS  
RG = 25, IAS = 22A. (See Figure 12a)  
ƒ ISD 22A, di/dt 190A/µs, VDD V(BR)DSS  
TJ 150°C  
,
Data and specifications subject to change without notice.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.02/04  
8
www.irf.com  

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