IRFP460LC [INFINEON]
Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A); 功率MOSFET （ VDSS = 500V ， RDS（ON） = 0.27ohm ，ID = 20A ）
| 型号： | IRFP460LC |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=500V, Rds(on)=0.27ohm, Id=20A) |
| 文件： | 总8页 (文件大小：290K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.1232
IRFP460LC
HEXFET® Power MOSFET
Ultra Low Gate Charge
Reduced Gate Drive Requirement
Enhanced 30V Vgs Rating
Reduced Ciss, Coss, Crss
Isolated Central Mounting Hole
Dynamic dv/dt Rated
VDSS = 500V
RDS(on) = 0.27Ω
ID = 20A
Repetitive Avalanche Rated
Description
This new series of Low Charge HEXFET Power MOSFETs achieve significantly
lower gate charge over conventional MOSFETs. Utilizing advanced Hexfet
technology the device improvements allow for reduced gate drive requirements,
faster switching speeds and increased total system savings. These device
improvements combined with the proven ruggedness and reliability of HEXFETs
offer the designer a new standard in power transistors for switching applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, V GS @ 10V
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current
20
12
A
80
PD @TC = 25°C
Power Dissipation
280
W
W/°C
V
Linear Derating Factor
2.2
VGS
EAS
IAR
Gate-to-Source Voltage
±30
Single Pulse Avalanche Energy
Avalanche Current
960
mJ
A
20
28
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
3.5
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
°C
300 (1.6mm from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
––––
––––
Typ.
––––
0.24
Max.
0.45
Units
RθJC
RθCS
RθJA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
––––
––––
°C/W
40
––––
To Order
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IRFP460LC
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
500 ––– –––
––– 0.59 ––– V/°C Reference to 25°C, I D = 1mA
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
VGS(th)
gfs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 0.27
2.0 ––– 4.0
12 ––– –––
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 120
––– ––– 32
––– ––– 49
––– 18 –––
––– 77 –––
––– 40 –––
––– 43 –––
Ω
V
S
VGS = 10V, ID = 12A
VDS = VGS, ID = 250µA
VDS = 50V, ID = 12A
VDS = 500V, VGS = 0V
VDS = 400V, VGS = 0V, TJ = 125°C
VGS = 20V
Forward Transconductance
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = 20A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC
ns
VDS = 400V
VGS = 10V, See Fig. 6 and 13
VDD = 250V
ID = 20A
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 4.3Ω
RD = 12Ω, See Fig. 10
Between lead,
LD
LS
Internal Drain Inductance
Internal Source Inductance
––– 5.0 –––
6mm (0.25in.)
nH
pF
from package
––– 13
–––
and center of die contact
VGS = 0V
Ciss
Coss
Crss
Input Capacitance
––– 3600 –––
––– 440 –––
––– 39 –––
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
IS
––– –––
20
showing the
A
ISM
Pulsed Source Current
(Body Diode)
integral reverse
––– –––
80
p-n junction diode.
TJ = 25°C, IS = 20A, VGS = 0V
TJ = 25°C, IF = 20A
di/dt = 100A/µs
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.8
––– 570 860
V
ns
µC
Qrr
ton
––– 6.6
9.9
Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD ≤ 20A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
VDD = 25V, starting T J = 25°C, L = 4.3mH
Pulse width ≤ 300µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 20A. (See Figure 12)
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IRFP460LC
1 00
1 00
10
VGS
VGS
15V
TOP
15V
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
10
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
1
1
0.1
0.01
0.1
0.01
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
C
= 25°C
T
= 150°C
C
0.01
0.1
1
10
100
0.01
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics,
Fig 2. Typical Output Characteristics,
TC = 25oC
TC = 150oC
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
10
I
= 20A
D
T
= 150°C
J
1
T
= 25°C
J
0.1
0.01
V
= 50V
D S
20µs P ULS E W IDTH
V
GS
= 10V
-6 0 -40 -20
0
20
40
60
80 100 120 140 160
4
5
6
7
8
9
10
T
J
, Junction Temperature (°C)
V
, Gate-to-S ource Voltage (V)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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IRFP460LC
7000
20
16
12
8
I
= 20A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
6000
5000
4000
3000
2000
1000
0
= C
gd
V
V
V
= 400V
= 250V
= 100V
DS
DS
DS
= C + C
ds
gd
C
C
iss
oss
4
C
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
30
60
90
120
V
, Drain-to-Source Voltage (V)
DS
Q
, Total Gate Charge (nC)
G
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T = 150°C
J
10µs
T = 25°C
J
100µs
1ms
T
T
= 25°C
= 150°C
Single Pulse
C
J
10ms
V
= 0V
GS
1
1
10
100
1000
0
0.4
0.8
1.2
1.6
2
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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IRFP460LC
RD
VDS
VGS
2 0
1 6
1 2
8
D.U.T.
RG
VDD
10 V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
4
0
25
50
75
100
125
150
T
C
, Case Temperature (°C)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
1
D
= 0.50
0.20
0.1
0.1 0
0.0 5
P
DM
0.02
0.01
0.01
t
1
SING LE PUL SE
t
(T HERM AL RESPO NSE)
2
N o tes :
1 . Du ty fa ctor D
=
t
/ t
2
1
2 . Pe ak T = P
x Z
+ T
C
D M
J
thJC
1
0.001
0.00001
0.0001
0.001
0.01
0.1
10
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRFP460LC
10 V
Index
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2100
1800
1500
1200
900
600
300
0
I
D
TOP
8.9A
13A
BOTTOM 20A
Fig 12a. Unclamped Inductive Test Circuit
V
= 50V
DD
25
5 0
75
100
125
150
Starting T , Juntion Temperature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms
10 V
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRFP460LC
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
D.U.T
• Low Leakage Inductance
Current Transformer
RG
• dv/dt controlled by R G
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
*
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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IRF460LC
Package Outline
TO-247AC
Part Marking Information
TO-247AC
EXAMPLE : THIS IS AN IRFPE30
WITH ASSEMBLY
A
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 3A1Q
IRFPE30
3A1Q 9302
DATE CODE
(YYWW)
ASSEMBLY
LOT CODE
YY = YEAR
WW WEEK
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: (44) 0883 713215
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 3L1, Tel: (905) 475 1897 IR GERMANY:
Saalburgstrasse 157, 61350 Bad Homburg Tel: 6172 37066 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: (39) 1145
10111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ki, Tokyo 171 Tel: (03)3983 0641 IR
SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, 0316 Tel: 65 221 8371
Data and specifications subject to change without notice.
To Order
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