IRFP7430PBF [INFINEON]
Brushed Motor drive applications; 有刷电机驱动应用型号: | IRFP7430PBF |
厂家: | Infineon |
描述: | Brushed Motor drive applications |
文件: | 总9页 (文件大小:273K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97777
StrongIRFET
IRFP7430PbF
Applications
HEXFET® Power MOSFET
l Brushed Motor drive applications
l BLDC Motor drive applications
l Battery powered circuits
l Half-bridge and full-bridge topologies
l Synchronous rectifier applications
l Resonant mode power supplies
l OR-ing and redundant power switches
l DC/DC and AC/DC converters
l DC/AC Inverters
D
S
VDSS
40V
RDS(on) typ.
max.
1.0m
1.3m
G
ID
404A
(Silicon Limited)
ID
195A
(Package Limited)
D
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
S
D
Ruggedness
G
l Fully Characterized Capacitance and Avalanche
SOA
TO-247AC
IRFP7430PbF
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
G
D
S
Gate
Drain
Source
Ordering Information
Base Part Number
Package Type
Standard Pack
Form
Tube
Complete Part
Number
IRFP7430PbF
Quantity
IRFP7430PbF
TO-247
50
6.0
4.0
2.0
0.0
500
400
300
200
100
0
I
= 100A
D
Limited By Package
T
= 125°C
J
T
= 25°C
J
4
6
8
10 12 14
16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage (V)
C
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
www.irf.com
1
04/20/12
IRFP7430PbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
404
Units
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
286
A
195
1524
366
PD @TC = 25°C
Maximum Power Dissipation
W
2.4
Linear Derating Factor
W/°C
V
± 20
VGS
TJ
Gate-to-Source Voltage
-55 to + 175
Operating Junction and
°C
TSTG
Storage Temperature Range
300
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting torque, 6-32 or M3 screw
10lbf in (1.1N m)
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
722
1360
mJ
EAS (tested)
IAR
Single Pulse Avalanche Energy Tested Value
Avalanche Current
See Fig. 14, 15, 22a, 22b
A
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.41
–––
40
Units
R
JC
R
CS
R
JA
Junction-to-Case
°C/W
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
0.24
–––
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
V
VGS = 0V, ID = 250μA
V(BR)DSS/TJ
RDS(on)
––– 0.014 –––
V/°C Reference to 25°C, ID = 1.0mA
m VGS = 10V, ID = 100A
m VGS = 6.0V, ID = 50A
–––
1.0
1.2
1.3
–––
3.9
VGS(th)
IDSS
Gate Threshold Voltage
2.2
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
2.1
V
VDS = VGS, ID = 250μA
Drain-to-Source Leakage Current
1.0
μA VDS = 40V, VGS = 0V
150
100
-100
–––
V
V
DS = 40V, VGS = 0V, TJ = 125°C
GS = 20V
IGSS
RG
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
VGS = -20V
Notes:
Calculated continuous current based on maximum allowable junction
ꢀ Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C.
temperature. Bond wire current limit is 195A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements. (Refer to AN-1140)
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.14mH
RG = 50, IAS = 100A, VGS =10V.
.
.
This value determined from sample failure population,
ISD 100A, di/dt 990A/μs, VDD V(BR)DSS, TJ 175°C.
starting TJ = 25°C, L= 0.14mH, RG = 50, IAS = 100A, VGS =10V.
2
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IRFP7430PbF
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Qg
Forward Transconductance
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
300
77
–––
460
–––
–––
–––
–––
–––
–––
–––
S
VDS = 10V, ID = 100A
Total Gate Charge
nC ID = 100A
VDS =20V
Qgs
Qgd
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
98
VGS = 10V
Qsync
td(on)
tr
202
32
ID = 100A, VDS =0V, VGS = 10V
ns VDD = 20V
ID = 30A
Rise Time
105
160
100
td(off)
tf
Turn-Off Delay Time
RG = 2.7
VGS = 10V
Fall Time
Ciss
Coss
Crss
Input Capacitance
––– 14240 –––
pF VGS = 0V
Output Capacitance
–––
–––
–––
–––
2130
1460
2605
2920
–––
–––
–––
–––
V
DS = 25V
ƒ = 1.0 MHz
GS = 0V, VDS = 0V to 32V
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
C
oss eff. (ER)
V
Coss eff. (TR)
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
Continuous Source Current
–––
––– 376
A
A
V
(Body Diode)
showing the
G
ISM
Pulsed Source Current
–––
–––
1576
integral reverse
(Body Diode)
p-n junction diode.
TJ = 25°C, IS = 100A, VGS = 0V
VSD
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
–––
–––
–––
–––
–––
–––
–––
0.86
2.7
52
1.2
–––
–––
–––
–––
–––
–––
dv/dt
trr
V/ns TJ = 175°C, IS = 100A, VDS = 40V
ns TJ = 25°C
TJ = 125°C
VR = 34V,
IF = 100A
di/dt = 100A/μs
52
Qrr
Reverse Recovery Charge
Reverse Recovery Current
97
nC TJ = 25°C
TJ = 125°C
97
IRRM
2.3
A
TJ = 25°C
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3
IRFP7430PbF
1000
100
10
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
4.8V
4.5V
TOP
TOP
100
BOTTOM
BOTTOM
4.5V
10
4.5V
60μs PULSE WIDTH
60μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 3. Typical Output Characteristics
Fig 4. Typical Output Characteristics
1000
2.0
I
= 100A
= 10V
D
V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
GS
100
10
T
= 25°C
J
T = 175°C
J
V
= 25V
DS
60μs PULSE WIDTH
1.0
2
3
4
5
6
7
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
100000
10000
1000
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 100A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
= 32V
= 20V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
C
iss
C
C
oss
rss
1
10
, Drain-to-Source Voltage (V)
100
0
50 100 150 200 250 300 350 400
V
DS
Q , Total Gate Charge (nC)
G
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage
4
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IRFP7430PbF
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
1msec
10msec
Limited by package
T
= 25°C
J
1
1
DC
10
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-toSource Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode
Forward Voltage
47
46
45
44
43
42
41
40
2.5
Id = 1.0mA
V
= 0V to 32V
DS
2.0
1.5
1.0
0.5
0.0
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
-60 -40 -20 0 20 40 60 80 100120140160180
T , Temperature ( °C )
J
V
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical COSS Stored Energy
6.0
V
V
V
V
V
= 5.5V
= 6.0V
= 7.0V
= 8.0V
=10V
GS
GS
GS
GS
GS
4.0
2.0
0.0
0
200
400
600
800 1000 1200
I , Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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5
IRFP7430PbF
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
0.001
0.0001
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
800
700
600
500
400
300
200
100
0
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
25
50
75
100
125
150
175
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
Fig 16. Maximum AvalJanche Energy vs. Temperature
6
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IRFP7430PbF
4.0
3.5
3.0
2.5
2.0
1.5
1.0
12
10
8
I = 60A
F
V
= 34V
R
T = 25°C
J
T = 125°C
J
6
I
I
I
= 250μA
= 1.0mA
= 1.0A
D
D
D
4
2
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
di /dt (A/μs)
J
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig 17. Threshold Voltage vs. Temperature
12
300
I = 100A
F
I = 60A
F
V
= 34V
V
= 34V
R
10
8
R
250
200
150
100
50
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
4
2
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 19 - Typical Recovery Current vs. dif/dt
Fig. 20 - Typical Stored Charge vs. dif/dt
260
I = 100A
F
V
= 34V
R
220
180
140
100
60
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 21 - Typical Stored Charge vs. dif/dt
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7
IRFP7430PbF
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
-
*
=10V
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
2V0GVS
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width µs
Duty Factor
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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IRFP7430PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Qualification information
†
Industrial††
(per JEDEC JESD47F††† guidelines)
Qualification level
N/A
(per JE DE C J-S TD-020D†††
Moisture Sensitivity Level
RoHS compliant
TO-247AC
)
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Higher qualification ratings may be available should the user have such requirements. Please contact your
International Rectifier sales representative for further information: http:www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2012
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9
相关型号:
IRFP7530
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
IRFP7537
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
INFINEON
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