IRFP90N20D [INFINEON]
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A); 功率MOSFET （ VDSS = 200V ， RDS（ON）最大值= 0.023ohm ，ID = 94A ）
| 型号： | IRFP90N20D |
| 厂家： | 
Infineon |
| 描述： | Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=94A) |
| 文件： | 总8页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 94301A
SMPS MOSFET
IRFP90N20D
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
VDSS
200V
RDS(on) max
ID
94A
o
0.023Ω
Benefits
l Low Gate-to-Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
94o
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
66
A
380
PD @TC = 25°C
Power Dissipation
580
W
W/°C
V
Linear Derating Factor
3.8
VGS
dv/dt
TJ
Gate-to-Source Voltage
± 30
Peak Diode Recovery dv/dt
Operating Junction and
6.7
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
Max.
Units
RθJC
RθCS
RθJA
Junction-to-Case
–––
0.24
–––
0.26
–––
40
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
Notes through o are on page 8
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1
09/27/01
IRFP90N20D
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 ––– –––
––– 0.24 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.023
3.0 ––– 5.0
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
VGS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Ω
VGS = 10V, ID = 56A
VDS = VGS, ID = 250µA
VDS = 200V, VGS = 0V
VDS = 160V, VGS = 0V, TJ = 150°C
VGS = 30V
V
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
IGSS
VGS = -30V
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
39 ––– –––
––– 180 270
Conditions
VDS = 50V, ID = 56A
ID = 56A
gfs
S
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
45
67
nC VDS = 160V
VGS = 10V,
VDD = 100V
87 130
23 –––
––– 160 –––
ID = 56A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
43 –––
79 –––
RG = 1.2Ω
VGS = 10V
VGS = 0V
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Input Capacitance
––– 6040 –––
––– 1070 –––
––– 170 –––
––– 8350 –––
––– 420 –––
––– 870 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
VDS = 25V
pF
ƒ = 1.0MHz
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 160V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 160V ꢀ
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
Max.
1010
56
Units
mJ
EAS
IAR
–––
–––
–––
Avalanche Current
A
EAR
Repetitive Avalanche Energy
58
mJ
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
IS
Continuous Source Current
(Body Diode)
MOSFET symbol
––– ––– 94o
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
380
––– –––
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– 1.5
––– 230 340
––– 1.9 2.8
V
TJ = 25°C, IS = 56A, VGS = 0V
TJ = 25°C, IF = 56A
ns
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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IRFP90N20D
1000
100
10
1000
100
10
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
8.0V
7.0V
6.0V
5.5V
BOTTOM 5.0V
BOTTOM 5.0V
5.0V
1
5.0V
0.1
0.01
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
3.5
94A
=
I
D
3.0
2.5
2.0
1.5
1.0
0.5
0.0
T
= 175°C
J
100.00
10.00
1.00
T
= 25°C
J
V
= 15V
DS
20µs PULSE WIDTH
V
= 10V
GS
5.0
7.0
9.0
11.0
13.0
15.0
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
°
T , Junction Temperature
( C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
vs. Temperature
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3
IRFP90N20D
12
10
7
1000000
D
I
=
56A
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
=
=
=
160V
100V
40V
DS
DS
DS
= C + C
,
C
SHORTED
iss
gs
gd
ds
C
= C
rss
gd
100000
10000
1000
100
C
= C + C
oss
ds
gd
Ciss
Coss
5
Crss
2
0
10
0
40
Q
80
120
160
200
1
10
100
1000
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
10000
OPERATION IN THIS AREA
LIMITED BY R
(on)
1000
100
10
DS
T
= 175°C
J
T
= 25°C
J
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
100
1000
V
, Source-toDrain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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IRFP90N20D
RD
100
80
60
40
20
0
VDS
LIMITED BY PACKAGE
VGS
10V
D.U.T.
RG
+VDD
-
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP90N20D
2100
1680
1260
840
420
0
1 5V
I
D
TOP
23A
40A
56A
DRIVER
L
BOTTOM
V
G
DS
D.U.T
AS
R
+
V
D D
-
I
A
20V
0.01
t
Ω
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T , Junction Temperature
J
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
Q
G
50KΩ
.2µF
12V
10 V
.3µF
Q
Q
GD
GS
+
V
DS
D.U.T.
-
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFP90N20D
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRFP90N20D
TO - 247 Package Outline
Dimensions are shown in millimeters (inches)
- D -
3.65 (.143)
3.55 (.140)
5.30 (.209)
4.70 (.185)
15.90 (.626)
15.30 (.602)
0.25 (.010)
D
M
B
M
2.50 (.089)
- B -
- A -
1.50 (.059)
5.50 (.217)
4
20.30 (.800)
19.70 (.775)
N O T E S :
5.50 (.217)
4.50 (.177)
2X
1
D IM E N S IO N IN G & TO LE R A N C IN G
P E R A N S I Y 14 .5 M , 19 82 .
C O N TR O L LIN G D IM E N S IO N : IN C H .
C O N F O R M S TO JE D E C O U TL IN E
T O -24 7-A C .
1
2
3
2
3
- C -
14.80 (.583)
14.20 (.559)
4.30 (.170)
3.70 (.145)
LE A D A S S IG N M E N T S
2.40 (.094)
2.00 (.079)
0.80 (.031)
0.40 (.016)
1.40 (.056)
1.00 (.039)
3X
3X
1
2
3
4
-
-
-
-
G A T E
D R A IN
S O U R C E
D R A IN
2X
2.60 (.102)
2.20 (.087)
0.25 (.010)
C
A
S
M
5.45 (.215)
3.40 (.133)
3.00 (.118)
2X
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
ꢀCoss eff. is a fixed capacitance that gives the same charging time
max. junction temperature.
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25°C, L = 0.64mH
R
G = 25Ω, IAS = 56A.
o Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 90A.
ISD ≤ 56A, di/dt ≤ 470A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.09/01
8
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INFINEON
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