IRFP7537PBF [INFINEON]
Power Field-Effect Transistor;
| 型号： | IRFP7537PBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor |
| 文件： | 总10页 (文件大小：541K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
StrongIRFET™
IRFP7537PbF
HEXFET® Power MOSFET
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
VDSS
60V
RDS(on) typ.
max
2.75m
3.30m
ID
172A
S
Benefits
D
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
G
D
S
Gate
Drain
Source
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRFP7537PbF
TO-247
Tube
25
IRFP7537PbF
12
10
8
200
150
100
50
I
= 100A
D
6
T
T
= 125°C
= 25°C
J
4
2
J
0
0
2
4
6
8
10 12 14 16 18 20
25
50
75
100
125
150
175
T
, Case Temperature (°C)
V
Gate -to -Source Voltage (V)
C
GS,
Fig 2. Maximum Drain Current vs. Case Temperature
Fig 1. Typical On-Resistance vs. Gate Voltage
1
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IRFP7537PbF
Absolute Maximum Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
172
121
700
230
1.5
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
A
IDM
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
PD @TC = 25°C
W
W/°C
V
VGS
Gate-to-Source Voltage
± 20
TJ
TSTG
Operating Junction and
Storage Temperature Range
-55 to + 175
°C
Soldering Temperature, for 10 seconds (1.6mm from case)
300
Mounting Torque, 6-32 or M3 Screw
10 lbf·in (1.1 N·m)
Avalanche Characteristics
EAS (Thermally limited)
EAS (tested)
IAR
250
280
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
A
mJ
See Fig 15, 16, 23a, 23b
EAR
Repetitive Avalanche Energy
Thermal Resistance
Symbol
Parameter
Typ.
–––
0.24
–––
Max.
0.66
–––
40
Units
Junction-to-Case
RJC
RCS
RJA
Case-to-Sink, Flat Greased Surface
°C/W
Junction-to-Ambient
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
60
––– –––
V
VGS = 0V, ID = 250µA
–––
40 ––– mV/°C Reference to 25°C, ID = 1mA
V(BR)DSS/TJ
RDS(on)
––– 2.75 3.30
––– 3.50 –––
2.1 –––
––– –––
––– ––– 150
––– ––– 100
––– ––– -100
V
V
GS = 10V, ID = 100A
GS = 6.0V, ID = 50A
m
V
VGS(th)
IDSS
Gate Threshold Voltage
3.7
1.0
VDS = VGS, ID = 150µA
DS =60 V, VGS = 0V
VDS =60V,VGS = 0V,TJ =125°C
V
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Gate Resistance
V
V
GS = 20V
GS = -20V
IGSS
RG
nA
–––
2.0
–––
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25°C, L = 50µH, RG = 50, IAS = 100A, VGS =10V.
ISD 100A, di/dt 1130A/µs, VDD V(BR)DSS, TJ 175°C.
Pulse width 400µs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS
.
Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS
.
R is measured at TJ approximately 90°C.
This value determined from sample failure population, starting TJ =25°C, L= 50µH, RG = 50, IAS =100A, VGS =10V.
2
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IRFP7537PbF
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min.
190
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
–––
142
36
–––
210
–––
–––
–––
–––
–––
S
VDS = 10V, ID =100A
Qg
ID = 100A
VDS = 30V
VGS = 10V
Qgs
Gate-to-Source Charge
Gate-to-Drain Charge
Total Gate Charge Sync. (Qg– Qgd)
Turn-On Delay Time
nC
Qgd
43
Qsync
td(on)
tr
99
15
VDD = 30V
ID = 100A
Rise Time
105
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
–––
–––
–––
–––
–––
82
84
–––
–––
–––
–––
–––
RG= 2.7
V
GS = 10V
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
7020
640
395
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig.7
pF
Effective Output Capacitance
(Energy Related)
Coss eff.(ER)
Coss eff.(TR)
–––
–––
665
880
–––
–––
VGS = 0V, VDS = 0V to 48V
VGS = 0V, VDS = 0V to 48V
Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min.
Typ. Max. Units
Conditions
MOSFET symbol
D
Continuous Source Current
(Body Diode)
IS
–––
–––
172
showing the
A
G
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
ISM
–––
–––
–––
–––
700
1.2
S
VSD
Diode Forward Voltage
V
TJ = 25°C,IS = 100A,VGS = 0V
dv/dt
Peak Diode Recovery dv/dt
–––
–––
–––
–––
–––
–––
10
39
41
46
56
2.1
––– V/ns TJ = 175°C,IS =100A,VDS = 60V
–––
–––
–––
–––
–––
TJ = 25°C
VDD = 51V
IF = 100A,
trr
Reverse Recovery Time
ns
TJ = 125°C
TJ = 25°C di/dt = 100A/µs
Qrr
Reverse Recovery Charge
Reverse Recovery Current
nC
A
TJ = 125°C
TJ = 25°C
IRRM
3
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IRFP7537PbF
1000
100
10
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs
Tj = 175°C
PULSE WIDTH
60µs
PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 4. Typical Output Characteristics
Fig 3. Typical Output Characteristics
2.4
2.0
1.6
1.2
0.8
0.4
1000
100
10
I
= 100A
= 10V
D
V
GS
T
= 175°C
T
= 25°C
J
J
1
V
= 25V
DS
60µs PULSE WIDTH
0.1
-60
-20
T
20
60
100
140
180
2
3
4
5
6
7
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 6. Normalized On-Resistance vs. Temperature
Fig 5. Typical Transfer Characteristics
14.0
100000
10000
1000
V
C
= 0V,
f = 1 MHZ
GS
I
= 100A
D
= C + C , C SHORTED
iss
gs
gd ds
12.0
10.0
8.0
C
= C
rss
gd
V
= 48V
= 30V
DS
C
= C + C
oss
ds
gd
V
DS
VDS= 12V
C
iss
6.0
C
oss
rss
C
4.0
2.0
0.0
100
0
50
100
150
0.1
1
10
100
Q , Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 8. Typical Gate Charge vs.
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage
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4
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IRFP7537PbF
1000
100
10
1000
100
10
100µsec
T
= 175°C
J
1msec
OPERATION IN THIS AREA
T
= 25°C
J
LIMITED BY R (on)
DS
10msec
1
1
Tc = 25°C
DC
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
0.1
0.1
1
10
0.1
0.4
V
0.7
1.0
1.3
1.6
1.9
2.2
V
, Drain-to-Source Voltage (V)
DS
, Source-to-Drain Voltage (V)
SD
Fig 10. Maximum Safe Operating Area
Fig 9. Typical Source-Drain Diode Forward Voltage
1.2
78
Id = 1.0mA
76
74
72
70
68
66
64
1.0
0.8
0.6
0.4
0.2
0.0
0
10
20
30
40
50
60
-60
-20
20
60
100
140
180
T
, Temperature ( °C )
J
V
Drain-to-Source Voltage (V)
DS,
Fig 11. Drain-to-Source Breakdown Voltage
Fig 12. Typical Coss Stored Energy
5.1
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
4.6
4.1
3.6
3.1
2.6
0
50
I
100
150
200
, Drain Current (A)
D
Fig 13. Typical On-Resistance vs. Drain Current
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January 10, 2014
IRFP7537PbF
1
0.1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
0.0001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
1
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Avalanche Current vs. Pulse Width
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1.Avalanche failures assumption:
TOP
BOTTOM 1.0% Duty Cycle
= 100A
Single Pulse
I
D
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every
part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not
exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
0
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see Figures 14)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
I
av = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)· av
t
Fig 16. Maximum Avalanche Energy vs. Temperature
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IRFP7537PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
12
9
I
= 60A
= 51V
F
V
R
T = 25°C
J
T = 125°C
J
6
ID = 150µA
ID = 250µA
ID = 1.0mA
ID = 1.0A
3
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
0
200
400
600
800
1000
T
di /dt (A/µs)
F
Fig 17. Threshold Voltage vs. Temperature
Fig 18. Typical Recovery Current vs. dif/dt
15
225
I
= 100A
= 51V
I
= 60A
= 51V
F
F
200
175
150
125
100
75
V
V
R
R
12
9
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
6
3
50
0
25
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig 19. Typical Recovery Current vs. dif/dt
Fig 20. Typical Stored Charge vs. dif/dt
225
I
= 100A
= 51V
F
200
175
150
125
100
75
V
R
T = 25°C
J
T = 125°C
J
50
25
0
200
400
600
800
1000
di /dt (A/µs)
F
Fig 21. Typical Stored Charge vs. dif/dt
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IRFP7537PbF
Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V
(BR)DSS
t
p
15V
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
20V
I
0.01
t
p
AS
Fig 23a. Unclamped Inductive Test Circuit
Fig 23b. Unclamped Inductive Waveforms
Fig 24a. Switching Time Test Circuit
Fig 24b. Switching Time Waveforms
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 25b. Gate Charge Waveform
Fig 25a. Gate Charge Test Circuit
8
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IRFP7537PbF
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
9
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IRFP7537PbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247
N/A
Yes
Moisture Sensitivity Level
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
10 www.irf.com
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January 10, 2014
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