IRFR6215TRRPBF [INFINEON]
Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3;
| 型号： | IRFR6215TRRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 局域网 开关 脉冲 晶体管 |
| 文件： | 总11页 (文件大小：151K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91749
IRFR/U6215
PRELIMINARY
HEXFET® Power MOSFET
l P-Channel
D
l 175°C Operating Temperature
l Surface Mount (IRFR6215)
l Straight Lead (IRFU6215)
l Advanced Process Technology
l Fast Switching
VDSS = -150V
RDS(on) = 0.295Ω
G
ID = -13A
l Fully Avalanche Rated
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
D-PAK
T O -252AA
I-PAK
TO -251AA
The D-PAK is designed for surface mounting using
vapor phase, infrared, or wave soldering techniques.
The straight lead version (IRFU series) is for through-
hole mounting applications. Power dissipation levels
up to 1.5 watts are possible in typical surface mount
applications.
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
-13
-9.0
-44
A
PD @TC = 25°C
Power Dissipation
110
0.71
± 20
310
-6.6
11
W
W/°C
V
Linear Derating Factor
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.0
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
–––
–––
Max.
1.4
Units
°C/W
1
RθJC
RθJA
Junction-to-Ambient (PCB mount) **
Junction-to-Ambient
50
RθJA
110
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5/11/98
IRFR/U6215
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-150 ––– –––
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
VGS = 0V, ID = -250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– -0.20 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.295
––– ––– 0.58
-2.0 ––– -4.0
VGS = -10V, ID = -6.6A
VGS = -10V, ID = -6.6A TJ = 150°C
VDS = VGS, ID = -250µA
VDS = -50V, ID = -6.6A
VDS = -150V, VGS = 0V
VDS = -120V, VGS = 0V, TJ = 150°C
VGS = 20V
Ω
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
Gate Threshold Voltage
V
S
Forward Transconductance
3.6
––– –––
––– ––– -25
––– ––– -250
––– ––– 100
––– ––– -100
––– ––– 66
––– ––– 8.1
––– ––– 35
IDSS
IGSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
VGS = -20V
Qg
ID = -6.6A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = -120V
VGS = -10V, See Fig. 6 and 13
–––
–––
–––
–––
14 –––
36 –––
53 –––
37 –––
VDD = -75V
ID = -6.6A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 6.8Ω
RD = 12Ω, See Fig. 10
Between lead,
D
LD
LS
Internal Drain Inductance
Internal Source Inductance
–––
4.5
–––
6mm (0.25in.)
nH
pF
G
from package
––– 7.5 –––
and center of die contactꢀ
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
––– 860 –––
––– 220 –––
––– 130 –––
Output Capacitance
VDS = -25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
-13
––– –––
––– –––
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
-44
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.6
––– 160 240
––– 1.2 1.7
V
TJ = 25°C, IS = -6.6A, VGS = 0V
ns
TJ = 25°C, IF = -6.6A
Qrr
ton
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 14mH
Pulse width ≤ 300µs; duty cycle ≤ 2%
ꢀ This is applied for I-PAK, LS of D-PAK is measured between lead and
RG = 25Ω, IAS = -6.6A. (See Figure 12)
center of die contact
ISD ≤-6.6A, di/dt ≤ -620A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
Uses IRF6215 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material )
For recommended footprint and soldering techniques refer to application note #AN-994
2
www.irf.com
IRFR/U6215
100
10
1
100
10
1
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
VGS
- 15V
- 10V
- 8.0V
- 7.0V
- 6.0V
- 5.5V
- 5.0V
TOP
TOP
BOTTOM - 4.5V
BOTTOM - 4.5V
-4.5V
20µs PULSE W IDTH
20µs PULSE W IDTH
= 25°C
-4.5V
T
T
= 175°C
c
C
A
A
1
10
100
1
10
100
-V
, Drain-to-Source Voltage (V)
-V
, Drain-to-Source Voltage (V)
DS
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
2.5
2.0
1.5
1.0
0.5
0.0
100
I
= -11A
D
TJ = 2 5 °C
TJ = 17 5 °C
10
V D S = -5 0 V
2 0 µs P UL S E W ID TH
V
= -10V
G S
1
A
10 A
-60 -40 -20
0
20
40
60
80 100 120 140 160 180
4
5
6
7
8
9
T
J
, Junction Tem perature (°C)
-V
, G ate-to -Sou rce Voltage (V)
G S
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
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3
IRFR/U6215
2000
20
16
12
8
V
= 0V ,
f = 1M Hz
I
= -6.6A
G S
D
V
V
V
= -120V
= -75V
= -30V
C
C
C
= C
+ C
+ C
,
C
SHORTED
D S
D S
D S
iss
gs
gd
ds
= C
= C
rss
oss
gd
ds
gd
1600
1200
800
400
0
C
iss
C
C
oss
rss
4
FO R TEST CIRCUIT
SEE FIGURE 13
0
A
A
1
10
100
0
20
G
40
60
80
-V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
Fig 5. Typical Capacitance Vs.
Fig 6. Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPE RATION IN THIS AREA LIM ITE D
BY R DS(on)
10µs
100µs
1m s
T
= 175°C
J
T
= 25°C
J
T
T
= 25°C
C
J
= 175°C
Single Pulse
10m s
V
= 0V
G S
0.1
A
A
0.2
0.6
1.0
1.4
1.8
1
10
100
1000
-V
, Drain-to-Source Voltage (V)
-V
, Source-to-Drain Voltage (V)
DS
SD
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRFR/U6215
RD
14
12
10
8
VDS
VGS
D.U.T.
RG
-
+
VDD
-10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
6
Fig 10a. Switching Time Test Circuit
4
t
t
r
t
t
f
d(on)
d(off)
2
V
GS
10%
0
25
50
75
100
125
150
175
°
, Case Temperature ( C)
T
C
90%
V
DS
Fig 9. Maximum Drain Current Vs.
Case Temperature
Fig 10b. Switching Time Waveforms
10
1
D
=
0.50
0 .2 0
0.10
0.0 5
P
D M
0.1
t
0.02
0.01
1
t
2
S IN G LE P U L S E
(T H E R M A L R E S P O N S E )
Notes:
1. D uty factor D
=
t
/ t
2
1
2. Peak
T
=
P
x Z
+ T
C
D M
J
th JC
0.1
A
0.01
0.00001
0.0001
0.001
0.01
1
t
, Re ctangular Pulse D uration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFR/U6215
800
600
400
200
0
L
I
V
D
D S
TOP
-2.7A
-4.7A
-6.6A
BO TTO M
D .U .T
R
G
V
D D
A
I
A S
D R IV ER
-20V
0.0 1
Ω
t
p
15V
Fig 12a. Unclamped Inductive Test Circuit
A
I
25
50
75
100
125
150
175
AS
Starting T , Junction Tem perature (°C)
J
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
Q
G
.2µF
12V
.3µF
-10V
-
V
+
DS
Q
Q
GD
D.U.T.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
6
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IRFR/U6215
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
* Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFR/U6215
Package Outline
TO-252AA Outline
Dimensions are shown in millimeters (inches)
2 .3 8 (.09 4)
2 .1 9 (.08 6)
6.7 3 (.265 )
6.3 5 (.250 )
1.14 (.0 45)
0.89 (.0 35)
-
A
4
-
1 .27 (.0 50)
0 .88 (.0 35)
5 .4 6 (.21 5)
5 .2 1 (.20 5)
0.5 8 (.02 3)
0.4 6 (.01 8)
6.45 (.2 45 )
5.68 (.2 24 )
6.22 (.2 45)
5.97 (.2 35)
1 0.42 (.4 10 )
9 .4 0 (.37 0)
1.0 2 (.04 0)
1.6 4 (.02 5)
LE A D A S S IG N M E N T S
1
2
3
1
2
3
4
-
-
-
-
G A T E
D R A IN
S O U R C E
D R A IN
0.51 (.0 20 )
M IN .
- B
-
1 .52 (.06 0)
1 .15 (.04 5)
0.89 (.0 35)
0.64 (.0 25)
3X
0 .58 (.0 23)
0 .46 (.0 18)
1.14 (.0 45)
0.76 (.0 30)
2X
0.2 5 (.0 10 )
M
A M B
N O TE S :
2.2 8 (.0 90 )
1
2
3
4
D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14 .5M , 1 982 .
C O N T R O LLIN G D IM E N S IO N : IN C H .
4 .57 (.18 0)
C O N F O R M S T O JE D E C O U T LIN E TO -25 2A A .
D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. +0 .16 (.00 6).
Part Marking Information
TO-252AA (D-PARK)
EXA M PLE : THIS IS AN IR FR120
W ITH AS SEM BLY
A
INTERN ATIONA L
RE CTIFIE R
LO GO
LOT COD E 9U1P
FIR ST PO RTION
OF PA RT NUM B ER
IR FR
120
1P
9U
ASS EM B LY
SE COND POR TION
OF PAR T NUM B ER
LOT
CODE
8
www.irf.com
IRFR/U6215
Package Outline
TO-251AA Outline
Dimensions are shown in millimeters (inches)
6.7 3 (.265 )
6.3 5 (.250 )
2.38 (.0 94 )
2.19 (.0 86 )
- A
-
0 .5 8 (.02 3)
0 .4 6 (.01 8)
1.2 7 (.050 )
0.8 8 (.035 )
5 .4 6 (.21 5)
5 .2 1 (.20 5)
LE A D A S S IG N M E N T S
4
1
2
3
4
-
-
-
-
G A T E
D R A IN
6 .45 (.2 45)
5 .68 (.2 24)
S O U R C E
D R A IN
6 .22 (.24 5)
5 .97 (.23 5)
1 .52 (.06 0)
1 .15 (.04 5)
1
2
3
- B
-
N O TE S :
1
2
3
4
D IM E N S IO N IN G & T O LE R A N C IN G P E R A N S I Y 14 .5M , 19 82 .
2.2 8 (.09 0)
1.9 1 (.07 5)
9.6 5 (.3 80 )
8.8 9 (.3 50 )
C O N T R O L LIN G D IM E N S IO N : IN C H .
C O N F O R M S TO J E D E C O U T LIN E T O -25 2A A .
D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP ,
S O L D E R D IP M A X. +0.1 6 (.00 6).
1 .14 (.0 45)
0 .76 (.0 30)
1.14 (.0 45 )
0.89 (.0 35 )
3X
0.8 9 (.035 )
0.6 4 (.025 )
3X
0 .25 (.01 0)
M
A M B
0.58 (.0 23 )
0.46 (.0 18 )
2 .28 (.09 0)
2 X
Part Marking Information
TO-251AA (I-PARK)
EXAM PLE : THIS IS AN IRFU120
W ITH ASSEM BLY
INTE RNATIONAL
RECTIFIER
LO GO
LOT CODE 9U1P
FIRST PORTION
OF PART NUM BER
IRFU
120
1P
9U
SECOND PO RTION
OF PART NUM BER
AS SEM BLY
LOT
CODE
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9
IRFR/U6215
Tape & Reel Information
TO-252AA
TR
TR L
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTIO N
FEED DIRECTIO N
NO T ES :
1. CO NT RO LLING DIM EN SIO N : M ILLIM ET ER.
2. ALL DIM EN SIO NS ARE SH O W N IN M ILLIM ETERS ( INC HES ).
3. O UTLINE CO N FO RM S T O EIA-481 & EIA-541.
13 INC H
16 m m
NO TES :
1. O U TLINE CO NFO RM S TO EIA-481.
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T 3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: 171 (K&H Bldg.) 30-4 Nishi-ikebukuro 3-chome, Toshima-ku, Tokyo Japan Tel: 81 33 983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 16907 Tel: 65 221 8371
Data and specifications subject to change without notice.
5/98
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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