IRFS3206TRRPBF [INFINEON]
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3;
| 型号： | IRFS3206TRRPBF |
| 厂家： | 
Infineon |
| 描述： | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRFB3206PbF
IRFS3206PbF
IRFSL3206PbF
HEXFET® Power MOSFET
60V
Applications
l High Efficiency Synchronous Rectification
D
VDSS
in SMPS
RDS(on) typ.
2.4m
3.0m
210A
l UninterruptiblePowerSupply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
max.
G
ID
(Silicon Limited)
ID (Package Limited)
120A
S
S
Benefits
l Improved Gate, Avalanche and Dynamic
D
D
dV/dt Ruggedness
l Fully Characterized Capacitance and
AvalancheSOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
l RoHSCompliant,Halogen-Free
D
S
D
S
D
D
G
G
G
D2Pak
IRFS3206PbF
TO-262
IRFSL3206PbF
TO-220AB
IRFB3206PbF
G
D
S
Gate
Drain
Source
Standard Pack
Base Part Number
Package Type
Orderable Part Number
Form
Quantity
IRFB3206PbF
IRFSL3206PbF
TO-220
TO-262
Tube
50
IRFB3206PbF
Tube
Tube
50
50
IRFSL3206PbF
IRFS3206PbF
IRFS3206PbF
D2Pak
Tape and Reel Left
Tape and Reel Right
800
800
IRFS3206TRLPbF
IRFS3206TRRPbF
Absolute Maximum Ratings
Symbol
Parameter
Max.
210
Units
A
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
Pulsed Drain Current
150
ID @ TC = 100°C
120
ID @ TC = 25°C
840
IDM
300
PD @TC = 25°C
Maximum Power Dissipation
W
2.0
Linear Derating Factor
W/°C
V
± 20
VGS
Gate-to-Source Voltage
5.0
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
Storage Temperature Range
°C
300
Soldering Temperature, for 10 seconds
(1.6mm from case)
10lb in (1.1N m)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy
Avalanche Current
170
mJ
A
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
Thermal Resistance
Symbol
Parameter
Junction-to-Case
Typ.
–––
Max.
Units
Rθ
0.50
–––
62
JC
Rθ
Case-to-Sink, Flat Greased Surface , TO-220
0.50
–––
CS
°C/W
Rθ
Junction-to-Ambient, TO-220
JA
Junction-to-Ambient (PCB Mount) , D2Pak
Rθ
JA
–––
40
1
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Min. Typ. Max. Units
60 ––– –––
––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
2.0
2.4
3.0
4.0
20
VGS = 10V, ID = 75A
mΩ
V
VGS(th)
–––
VDS = VGS, ID = 150μA
IDSS
Drain-to-Source Leakage Current
––– –––
μA VDS =60V, VGS = 0V
VDS = 48V, VGS = 0V, TJ = 125°C
nA VGS = 20V
––– ––– 250
––– ––– 100
––– ––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
VGS = -20V
RG
–––
0.7
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
VDS = 50V, ID = 75A
nC ID = 75A
DS =30V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
ns VDD = 30V
ID = 75A
R =2.7
210 ––– –––
S
Qg
––– 120 170
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
29
35
85
19
82
55
83
–––
V
Qgd
Qsync
–––
–––
–––
–––
–––
td(on)
tr
Rise Time
td(off)
Turn-Off Delay Time
Ω
G
tf
Fall Time
VGS = 10V
pF VGS = 0V
VDS = 50V
Ciss
Input Capacitance
––– 6540 –––
––– 720 –––
––– 360 –––
––– 1040 –––
––– 1230 –––
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig.5
Coss eff. (ER)
Coss eff. (TR)
VGS = 0V, VDS = 0V to 48V , See Fig.11
VGS = 0V, VDS = 0V to 48V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
IS
D
S
Continuous Source Current
––– –––
A
MOSFET symbol
210
(Body Diode)
Pulsed Source Current
showing the
integral reverse
G
ISM
––– ––– 840
A
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
––– –––
1.3
50
V
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 51V,
IF = 75A
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
–––
33
37
41
53
2.1
ns
56
di/dt = 100A/μs
Qrr
62
nC
A
80
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ISD ≤ 75A, di/dt ≤ 360A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
ꢀ Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
Repetitive rating; pulse width limited by max. junction
temperature.
.
Limited by TJmax, starting TJ = 25°C, L = 0.023mH
RG = 25Ω, IAS = 120A, VGS =10V. Part not recommended for use
above this value.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C
2
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1000
1000
100
10
VGS
15V
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
TOP
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
BOTTOM
BOTTOM
100
4.5V
4.5V
60μs PULSE WIDTH
Tj = 175°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
2.5
2.0
1.5
1.0
0.5
I
= 75A
D
V
= 10V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
≤ 60μs PULSE WIDTH
0.1
2.0
3.0
V
4.0
5.0
6.0
7.0
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
, Gate-to-Source Voltage (V)
GS
T
, Junction Temperature (°C)
J
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
20
12000
10000
8000
6000
4000
2000
0
V
C
= 0V,
f = 1 MHZ
I
= 75A
GS
D
= C + C , C SHORTED
iss
gs
gd ds
V
= 48V
DS
C
= C
rss
gd
16
12
8
VDS= 30V
VDS= 12V
C
= C + C
ds
oss
gd
Ciss
4
Coss
Crss
0
0
40
80
120
160
200
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
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Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1000
100
10
10000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
1000
100
10
T
= 175°C
J
1msec
100μsec
T
= 25°C
J
10msec
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
DC
V
= 0V
GS
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
, Source-to-Drain Voltage (V)
0.1
0.1
0.1
1
10
100
V
, Drain-toSource Voltage (V)
V
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
240
200
160
120
80
80
75
70
65
60
55
I
= 5mA
D
Limited By Package
40
0
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
25
50
75
100
125
150
175
T
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.0
1.5
1.0
0.5
0.0
800
600
400
200
0
I
D
TOP
21A
33A
BOTTOM 120A
0
10
V
20
30
40
50
60
25
50
75
100
125
150
175
Drain-to-Source Voltage (V)
Starting T , Junction Temperature (°C)
DS,
J
Fig 11. Typical COSS Stored Energy
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Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
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IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
τι
(sec)
Ri (°C/W)
0.02
0.01
τ
0.01
J τJ
τ
τ
Cτ
0.106416 0.0001
0.201878 0.001262
0.190923 0.011922
τ
1 τ1
τ
2 τ2
3τ3
Ci= τi/Ri
Ci= τi/Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
200
160
120
80
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
TOP
BOTTOM 1% Duty Cycle
= 120A
Single Pulse
I
D
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
40
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
18
I
I
I
= 1.0A
D
D
D
16
14
12
10
8
= 1.0mA
= 250μA
ID = 150μA
6
I
= 30A
F
4
V
= 51V
R
T
= 125°C
= 25°C
J
J
2
T
0
-75 -50 -25
0
J
25 50 75 100 125 150 175
, Temperature ( °C )
100 200 300 400 500 600 700 800 900 1000
T
di / dt - (A / μs)
f
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage Vs. Temperature
350
300
250
200
150
18
16
14
12
10
8
6
I
= 30A
= 51V
I
= 45A
= 51V
100
50
0
F
F
4
2
0
V
V
R
R
T
= 125°C
= 25°C
T
= 125°C
= 25°C
J
J
T
T
J
J
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
di / dt - (A / μs)
f
f
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
350
300
250
200
150
100
50
I
= 45A
F
V
= 51V
R
T
= 125°C
= 25°C
J
J
T
0
100 200 300 400 500 600 700 800 900 1000
di / dt - (A / μs)
f
Fig. 20 - Typical Stored Charge vs. dif/dt
6
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IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Driver Gate Drive
P.W.
D.U.T
Period
D =
Period
P.W.
+
*
=10V
V
GS
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
LD
VDS
VDS
90%
+
-
VDD
10%
VGS
D.U.T
VGS
Pulse Width < 1μs
Duty Factor < 0.1%
td(on)
td(off)
tr
tf
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
IRFB3206
PYWW?
IRFB3206
YWWP
DATE CODE
OR
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC
LC
LC
LC
? = ASSEMBLY SITE CODE
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
8
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IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
PART NUMBER
PART NUMBER
IRFS3206
IRFS3206
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
LC
LC
LC
LC
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
9
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
PART NUMBER
PART NUMBER
INTERNATIONAL
RECTIFIER LOGO
INTERNATIONAL
RECTIFIER LOGO
FSL3206
FSL3206
OR
PYWW?
YWWP
ASSEMBLY
LOT CODE
ASSEMBLY
LOT CODE
DATE CODE
DATE CODE
P = LEAD-FREE
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
Y = LAST DIGIT OF YEAR
WW = WORK WEEK
P = LEAD-FREE
LC LC
LC LC
? = ASSEMBLY SITE CODE
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
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April 24, 2014
IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
11
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IRFB3206PbF/IRFS3206PbF/IRFSL3206PbF
Qualification information†
Industrial
Qualification level
(per JEDEC JESD47F†† guidelines)
TO-220
N/A
Moisture Sensitivity Level
RoHS compliant
D2Pak
TO-262
MS L 1
Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/
Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comment
•
•
•
Updated data sheet with new IR corporate template.
Updated package outline & part marking on page 8, 9 & 10.
4/24/2014
Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
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April 24, 2014
相关型号：
IRFS3207TRLPBF
Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3
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IRFS3207TRR
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IRFS3207TRRPBF
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IRFS3207ZTRLPBF
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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IRFS3207ZTRRPBF
Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, D2PAK-3
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