IRFU3303PBF [INFINEON]
HEXFET Power MOSFET; HEXFET功率MOSFET
| 型号： | IRFU3303PBF |
| 厂家： | 
Infineon |
| 描述： | HEXFET Power MOSFET |
| 文件： | 总10页 (文件大小：247K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95070A
IRFR3303PbF
IRFU3303PbF
HEXFET® Power MOSFET
l Ultra Low On-Resistance
l Surface Mount (IRFR3303)
l Straight Lead (IRFU3033)
l Advanced Process Technology
l Fast Switching
D
VDSS = 30V
RDS(on) = 0.031Ω
l Fully Avalanche Rated
G
l Lead-Free
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
knownfor, providesthedesignerwithanextremelyefficient
and reliable device for use in a wide variety of applications.
The D-Pak is designed for surface mounting using vapor
phase, infrared, orwavesolderingtechniques. Thestraight
lead version (IRFU series) is for through-hole mounting
applications. Power dissipation levels up to 1.5 watts are
possible in typical surface mount applications.
D-Pak
TO-252AA
I-Pak
TO-251AA
Absolute Maximum Ratings
Parameter
Max.
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
33ꢀ
21ꢀ
120
57
A
PD @TC = 25°C
Power Dissipation
W
W/°C
V
Linear Derating Factor
0.45
± 20
95
VGS
EAS
IAR
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
18
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
5.7
mJ
V/ns
5.0
-55 to + 150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
2.2
Units
RθJC
RθJA
RθJA
Junction-to-Ambient (PCB mount)**
Junction-to-Ambient
50
°C/W
110
www.irf.com
1
12/14/04
IRFR/U3303PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient 0.032 V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance 0.031
Ω
V
S
VGS = 10V, ID = 18A
VDS = VGS, ID = 250µA
VDS = 25V, ID = 18A
Gate Threshold Voltage
2.0
9.3
4.0
Forward Transconductance
25
250
100
-100
29
7.3
13
V
DS = 30V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 150°C
VGS = 20V
IDSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
ID = 18A
Qg
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 24V
VGS = 10V, See Fig. 6 and 13
11
99
16
28
VDD = 15V
ID = 18A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 13Ω
RD = 0.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
4.5
LD
LS
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
7.5
and center of die contact
VGS = 0V
S
Ciss
Coss
Crss
Input Capacitance
750
400
140
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
IS
33ꢀ
A
G
ISM
Pulsed Source Current
(Body Diode)
integral reverse
120
1.3
p-n junction diode.
S
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
V
TJ = 25°C, IS = 18A, VGS = 0V
TJ = 25°C, IF = 18A
53
80
ns
nC
Qrr
ton
94 140
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Starting TJ = 25°C, L = 590µH
RG = 25Ω, IAS = 18A. (See Figure 12)
ISD ≤ 18A, di/dt ≤ 140A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C
ꢀ Caculated continuous current based on maximum allowable junction
temperature; Package limitation current = 20A.
,
This is applied for I-PAK, LS of D-PAK is measured between
lead and center of die contact
** When mounted on 1" square PCB (FR-4 or G-10 Material ) .
For recommended footprint and soldering techniques refer to application note #AN-994
IRFR/U3303PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM4.5V
1
4.5V
0.1
0.01
20µs PULSE WIDTH
T = 25 C
J
20µs PULSE WIDTH
°
°
4.5V T = 150 C
J
1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 2. Typical Output Characteristics
Fig 1. Typical Output Characteristics
100
2.0
30A
=
I
D
1.5
1.0
0.5
0.0
°
T = 150 C
J
10
°
T = 25 C
J
1
V
= 2
DS
15V
20µs PULSE WIDTH
V
= 10V
GS
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
4
5
6
7
8
9
10
T , Junction Temperature ( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance
Fig 3. Typical Transfer Characteristics
Vs. Temperature
IRFR/U3303PbF
1400
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
I
D
= 18A
GS
C
= C + C
iss
gs
gd ,
V
V
= 24V
= 15V
DS
DS
C
= C
1200
1000
800
600
400
200
0
rss
gd
C
= C + C
gd
oss
ds
C
iss
C
oss
C
4
rss
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q , Total Gate Charge (nC)
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T = 25 C
J
100
10
1
°
T = 150 C
J
10us
100us
1ms
°
T = 25 C
10ms
C
°
T = 150 C
Single Pulse
J
V
= 0 V
GS
4.0
0.1
0.0
1
1.0
2.0
3.0
5.0
1
10
100
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
IRFR/U3303PbF
RD
35
30
25
20
15
10
5
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 9. Maximum Drain Current Vs.
Fig 10b. Switching Time Waveforms
Case Temperature
10
D = 0.50
0.20
1
0.10
0.05
P
2
DM
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.1
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRFR/U3303PbF
200
150
100
50
L
I
D
V
DS
TOP
8.0A
11A
BOTTOM 18A
D.U.T.
R
+
-
G
V
DD
I
10 V
AS
t
p
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
0
V
(BR)DSS
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
t
J
p
V
DD
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
V
DS
I
AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
10 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
IRFR/U3303PbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
D.U.T
-
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VDD
Driver Gate Drive
P.W.
P.W.
Period
Period
D =
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
IRFR/U3303PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
PART NUMBER
WIT H AS S EMB LY
LOT CODE 1234
INTERNATIONAL
RECTIFIER
LOGO
DAT E CODE
YEAR 9 = 1999
WEEK 16
IRFU120
916A
ASSEMBLED ON WW 16, 1999
IN THE ASSEMBLY LINE "A"
12
34
LINE A
Note: "P" in assembly line position
ASSEMBLY
LOT CODE
indicates "L ead-F ree"
OR
PART NUMBER
DAT E CODE
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
12 34
YEAR 9 = 1999
ASSEMBLY
LOT CODE
WEEK 16
A = AS S E MB L Y S IT E CODE
IRFR/U3303PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PART NUMBER
EXAMPLE: THIS IS AN IRFU120
INTERNATIONAL
WITH ASSEMBLY
DAT E CODE
YEAR 9 = 1999
WEEK 19
RECTIFIER
LOGO
IRFU120
919A
78
LOT CODE 5678
ASSEMBLED ON WW 19, 1999
IN THE ASSEMBLYLINE "A"
56
LINE A
ASSEMBLY
LOT CODE
Note : "P" in assembly line
pos ition indicates "L ead-F r ee"
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
IRFU120
56 78
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 9 = 1999
AS S E MB L Y
LOT CODE
WE E K 19
A = AS S E MB L Y S I T E CODE
IRFR/U3303PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.12/04
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