IRFZ44NLPBF [INFINEON]
HEXFET㈢Power MOSFET; HEXFET㈢Power MOSFET型号: | IRFZ44NLPBF |
厂家: | Infineon |
描述: | HEXFET㈢Power MOSFET |
文件: | 总11页 (文件大小:335K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 95124
IRFZ44NSPbF
l AdvancedProcessTechnology
l SurfaceMount(IRFZ44NS)
l Low-profilethrough-hole(IRFZ44NL)
l 175°COperatingTemperature
l Fast Switching
IRFZ44NLPbF
HEXFET® Power MOSFET
D
VDSS = 55V
l FullyAvalancheRated
l Lead-Free
RDS(on) = 0ꢀ0175Ω
G
Description
Advanced HEXFET® Power MOSFETs from International
Rectifierutilizeadvancedprocessingtechniquestoachieve
extremely low on-resistance per silicon area& This benefit,
combined with the fast switching speed and ruggedized
devicedesignthatHEXFETpowerMOSFETsarewellknown
for, provides the designer with an extremely efficient and
reliable device for use in a wide variety of applications&
ID = 49A
S
The D2Pak is a surface mount power package capable of
accommodatingdiesizesuptoHEX-4&Itprovidesthehighest
power capability and the lowest possible on-resistance in
anyexistingsurfacemountpackage&TheD2Pakissuitable
for high current applications because of its low internal
connection resistance and can dissipate up to 2&0W in a
typicalsurfacemountapplication&
2
TO-262
D
Pak
The through-hole version (IRFZ44NL) is available for low-
profileapplications&
Absolute Maximum Ratings
Parameter
Max.
49
35
160
3.8
94
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
A
PD @TA = 25°C
PD @TC = 25°C
Power Dissipation
W
W
Power Dissipation
Linear Derating Factor
0.63
± 20
25
W/°C
V
VGS
IAR
Gate-to-Source Voltage
Avalanche Current
A
EAR
dv/dt
TJ
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
9.4
5.0
mJ
V/ns
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.5
Units
RθJC
RθJA
Junction-to-Ambient
–––
40
°C/W
www.irf.com
1
3/18/04
IRFZ44NS/LPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250µA
V(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.058 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
VGS(th)
gfs
Static Drain-to-Source On-Resistance ––– ––– 17.5 mΩ VGS = 10V, ID = 25A
Gate Threshold Voltage
2.0
––– 4.0
V
VDS = VGS, ID = 250µA
VDS = 25V, ID = 25A
VDS = 55V, VGS = 0V
Forward Transconductance
19
––– –––
S
––– ––– 25
––– ––– 250
––– ––– 100
––– ––– -100
––– ––– 63
––– ––– 14
––– ––– 23
IDSS
Drain-to-Source Leakage Current
µA
nA
VDS = 44V, VGS = 0V, TJ = 150°C
VGS = 20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
IGSS
VGS = -20V
Qg
Qgs
Qgd
td(on)
tr
ID = 25A
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
nC VDS = 44V
VGS = 10V, See Fig. 6 and 13
–––
–––
–––
–––
–––
12 –––
60 –––
44 –––
45 –––
7.5 –––
VDD = 28V
ID = 25A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
RG = 12Ω
VGS = 10V, See Fig. 10
LS
Internal Source Inductance
nH Between lead,
and center of die contact
Ciss
Coss
Crss
EAS
Input Capacitance
––– 1470 –––
––– 360 –––
VGS = 0V
Output Capacitance
VDS = 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
88 –––
pF ƒ = 1.0MHz, See Fig. 5
––– 530ꢀ150 mJ IAS = 25A, L = 0.47mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
S
IS
49
––– –––
showing the
A
G
ISM
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
integral reverse
p-n junction diode.
––– ––– 160
––– ––– 1.3
VSD
trr
V
TJ = 25°C, IS = 25A, VGS = 0V
TJ = 25°C, IF = 25A
––– 63
––– 170 260
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
95
ns
Qrr
ton
nC di/dt = 100A/µs
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 25A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS
TJ ≤ 175°C
,
max. junction temperature. (See fig. 11)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
ꢀ This is a typical value at device destruction and represents
operation outside rated limits.
Starting TJ = 25°C, L = 0.48mH
RG = 25Ω, IAS = 25A. (See Figure 12)
This is a calculated value limited to TJ = 175°C .
** When mounted on 1" square PCB (FR-4 or G-10 Material )#
For recommended footprint and soldering techniques refer to application note ꢀAN-994#
2
www.irf.com
IRFZ44NS/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
T = 175°C
J
J
A
1
0.1
1
0.1
A
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1ꢀ Typical Output Characteristics
Fig 2ꢀ Typical Output Characteristics
2.5
1000
100
10
I
= 41A
D
2.0
1.5
1.0
0.5
0.0
T = 25°C
J
T = 175°C
J
VDS = 25V
20µs PULSE WIDTH
V
= 10V
GS
1
A
10A
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
4
5
6
7
8
9
T
, Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 3ꢀ Typical Transfer Characteristics
Fig 4ꢀ Normalized On-Resistance
Vs0 Temperature
www.irf.com
3
IRFZ44NS/LPbF
20
16
12
8
2500
I
= 25A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
V
V
= 44V
= 28V
gs
gd
gd
ds
DS
DS
= C
= C + C
ds
gd
2000
1500
1000
500
0
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
A
A
0
10
20
30
40
50
60
70
1
10
100
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
G
DS
Fig 6ꢀ Typical Gate Charge Vs0
Fig 5ꢀ Typical Capacitance Vs0
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
10µs
100
10
1
T = 175°C
J
100µs
T = 25°C
J
1ms
10ms
T
T
= 25°C
= 175°C
C
J
Single Pulse
V
= 0V
GS
A
A
1
10
100
0.5
1.0
1.5
2.0
2.5
3.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 7ꢀ Typical Source-Drain Diode
Fig 8ꢀ Maximum Safe Operating Area
Forward Voltage
4
www.irf.com
IRFZ44NS/LPbF
RD
VDS
VGS
50
40
30
20
10
0
D#U#T#
RG
+VDD
-
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10aꢀ Switching Time Test Circuit
V
DS
90%
10%
25
50
75
100
125
150
175
V
°
GS
T , Case Temperature ( C)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9ꢀ Maximum Drain Current Vs0
Fig 10bꢀ Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
P
2
DM
0.05
0.1
t
1
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
t , Rectangular Pulse Duration (sec)
1
Fig11ꢀ MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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5
IRFZ44NS/LPbF
500
400
300
200
100
0
I
D
L
TOP
10A
18A
BOTTOM 25A
V
DS
D.U.T.
R
+
-
G
V
DD
I
10V
AS
t
p
0.01Ω
Fig 12aꢀ Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
V
= 25V
50
DD
A
175
25
75
100
125
150
V
DD
Starting T , Junction Temperature (°C)
J
V
DS
Fig 12cꢀ Maximum Avalanche Energy
I
AS
Vs0 Drain Current
Fig12bꢀ UnclampedInductiveWaveforms
Current Regulator
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
Q
G
.3µF
1ꢀ V
+
V
DS
Q
D.U.T.
-
GS
GD
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13bꢀ Gate Charge Test Circuit
Fig 13aꢀ Basic Gate Charge Waveform
6
www.irf.com
IRFZ44NS/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
-
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
-
-
+
RG
• dv/dt controlled by RG
+
-
• Driver same type as D#U#T#
• ISD controlled by Duty Factor "D"
• D#U#T# - Device Under Test
VDD
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
*
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig14ꢀ ForN-ChannelHEXFETS
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7
IRFZ44NS/LPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information (Lead-Free)
T H IS IS AN IR F 530S WIT H
P AR T N U MB E R
L OT COD E 8024
IN T E R N AT ION AL
R E CT IF IE R
L OGO
AS S E MB L E D ON WW 02, 2000
IN T H E AS S E MB L Y L IN E "L "
F 530S
D AT E CODE
Y E AR 0 = 2000
W E E K 02
N ote: "P " in as s embly line
pos ition indicates "L ead-F ree"
AS S E MB L Y
L OT COD E
L INE
L
OR
P AR T N U MB E R
IN T E R N AT ION AL
R E CT IF IE R
L OGO
F 530S
D AT E COD E
P
=
D E S IGN AT E S L E AD -F R E E
P R OD U CT (OP T ION AL )
AS S E MB L Y
L OT COD E
YE AR
W E E K 02
A = AS S E MB L Y S IT E COD E
0 = 2000
8
www.irf.com
IRFZ44NS/LPbF
TO-262 Package Outline
IGBT
1- GATE
2- COLLECTOR
3- EMITTER
TO-262 Part Marking Information
E XAMPLE : THIS IS AN IRL3103L
LOT CODE 1789
PART NUMBER
INTERNATIONAL
RECTIFIER
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
LOGO
DATE CODE
YEAR 7 = 1997
WEEK 19
Note: "P" in assembly line
pos ition indicates "Lead-Free"
AS S E MBL Y
LOT CODE
LINE C
OR
PART NUMBER
DATE CODE
INTERNATIONAL
RECTIFIER
LOGO
P = DESIGNATES LEAD-FREE
PRODUCT (OPTIONAL)
YEAR 7 = 1997
ASSEMBLY
LOT CODE
WE EK 19
A= ASSEMBLY SITE CODE
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9
IRFZ44NS/LPbF
D2Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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