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IRG4BC10SD-STRRPBF [INFINEON]

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3;
IRG4BC10SD-STRRPBF
型号： IRG4BC10SD-STRRPBF
厂家： Infineon    Infineon
描述：

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3

栅 瞄准线 功率控制 晶体管
文件： 总13页 (文件大小：316K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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PD - 95780  
IRG4BC10SD-SPbF  
IRG4BC10SD-LPbF  
Standard Speed  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
CoPack IGBT  
Features  
C
• Extremely low voltage drop 1.1Vtyp. @ 2A  
• S-Series: Minimizes power dissipation at up to 3  
KHz PWM frequency in inverter drives, up to 4  
KHz in brushless DC drives.  
VCES = 600V  
VCE(on) typ. = 1.10V  
• Very Tight Vce(on) distribution  
G
• IGBT co-packaged with HEXFREDTM ultrafast,  
ultra-soft-recovery anti-parallel diodes for use  
in bridge configurations  
@VGE = 15V, IC = 2.0A  
E
• Industry standard D2Pak & TO-262 packages  
n-channel  
• Lead-Free  
Benefits  
• Generation 4 IGBT's offer highest efficiencies  
available  
• IGBT's optimized for specific application conditions  
• HEXFRED diodes optimized for performance with  
IGBT's . Minimized recovery characteristics require  
less/no snubbing  
• Lower losses than MOSFET's conduction and  
Diode losses  
D2Pak  
IRG4BC10SD-S  
TO-262  
IRG4BC10SD-L  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
VCES  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Pulsed Collector Current   
Clamped Inductive Load Current ‚  
Diode Continuous Forward Current  
Diode Maximum Forward Current  
Gate-to-Emitter Voltage  
600  
V
IC @ TC = 25°C  
14  
IC @ TC = 100°C  
8.0  
ICM  
18  
A
ILM  
18  
IF @ TC = 100°C  
4.0  
IFM  
18  
± 20  
VGE  
V
PD @ TC = 25°C  
Maximum Power Dissipation  
38  
W
°C  
PD @ TC = 100°C Maximum Power Dissipation  
15  
TJ  
Operating Junction and  
-55 to +150  
TSTG  
Storage Temperature Range  
Soldering Temperature, for 10 sec.  
300 (0.063 in. (1.6mm) from case)  
Thermal Resistance  
Parameter  
Junction-to-Case - IGBT  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
Max.  
3.3  
Units  
RθJC  
RθJC  
RθCS  
RθJA  
RθJA  
Wt  
Junction-to-Case - Diode  
–––  
7.0  
°C/W  
Case-to-Sink, flat, greased surface  
0.50  
–––  
80  
Junction-to-Ambient, typical socket mount ꢀ  
–––  
Junction-to-Ambient (PCB Mount, steady state)† –––  
Weight –––  
–––  
40  
2.0(0.07)  
–––  
g (oz)  
www.irf.com  
1
08/27/04  
IRG4BC10SD-S/LPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
V(BR)CES  
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage  
Collector-to-Emitter Breakdown Voltageƒ 600  
—
—
—
V
VGE = 0V, IC = 250µA  
—
—
—
—
3.0  
—
0.64  
V/°C VGE = 0V, IC = 1.0mA  
IC = 8.0A  
VCE(on)  
Collector-to-Emitter Saturation Voltage  
1.58 1.8  
VGE = 15V  
2.05  
1.68  
—
—
—
V
IC = 14.0A  
See Fig. 2, 5  
IC = 8.0A, TJ = 150°C  
VCE = VGE, IC = 250µA  
VGE(th)  
Gate Threshold Voltage  
6.0  
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage  
-9.5  
mV/°C VCE = VGE, IC = 250µA  
gfe  
Forward Transconductance„  
Zero Gate Voltage Collector Current  
3.65 5.48  
—
S
VCE = 100V, IC =8.0A  
VGE = 0V, VCE = 600V  
ICES  
—
—
—
—
—
—
—
250  
1000  
µA  
V
GE = 0V, VCE = 600V, TJ = 150°C  
VFM  
Diode Forward Voltage Drop  
1.5 1.8  
1.4 1.7  
V
IC =4.0A  
See Fig. 13  
IC =4.0A, TJ = 150°C  
VGE = ±20V  
IGES  
Gate-to-Emitter Leakage Current  
—
±100 nA  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Min. Typ. Max. Units  
Conditions  
Qg  
Total Gate Charge (turn-on)  
Gate - Emitter Charge (turn-on)  
Gate - Collector Charge (turn-on)  
Turn-On Delay Time  
Rise Time  
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
15 22  
IC = 8.0A  
Qge  
Qgc  
td(on)  
tr  
2.42 3.6  
6.53 9.8  
nC VCC = 400V  
VGE = 15V  
See Fig. 8  
76  
32  
—
—
TJ = 25°C  
ns  
IC = 8.0A, VCC = 480V  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
815 1200  
720 1080  
VGE = 15V, RG = 100Ω  
Energy losses include "tail" and  
diode reverse recovery.  
Eon  
Eoff  
Ets  
Ets  
td(on)  
tr  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Total Switching Loss  
Turn-On Delay Time  
Rise Time  
0.31  
3.28  
—
—
mJ See Fig. 9, 10, 18  
3.60 10.9  
1.46 2.6  
mJ IC = 5.0A  
70  
36  
—
—
—
—
—
—
—
—
—
42  
57  
TJ = 150°C, See Fig. 10,11, 18  
IC = 8.0A, VCC = 480V  
ns  
td(off)  
tf  
Turn-Off Delay Time  
Fall Time  
890  
890  
3.83  
7.5  
280  
30  
VGE = 15V, RG = 100Ω  
Energy losses include "tail" and  
Ets  
LE  
Total Switching Loss  
Internal Emitter Inductance  
Input Capacitance  
mJ diode reverse recovery.  
nH Measured 5mm from package  
VGE = 0V  
Cies  
Coes  
Cres  
trr  
Output Capacitance  
Reverse Transfer Capacitance  
Diode Reverse Recovery Time  
pF  
ns  
A
VCC = 30V  
See Fig. 7  
4.0  
28  
ƒ = 1.0MHz  
TJ = 25°C See Fig.  
38  
TJ = 125°C  
TJ = 25°C See Fig.  
TJ = 125°C 15  
nC TJ = 25°C See Fig.  
TJ = 125°C 16  
A/µs TJ = 25°C See Fig.  
TJ = 125°C 17  
14  
IF =4.0A  
Irr  
Diode Peak Reverse Recovery Current  
Diode Reverse Recovery Charge  
2.9 5.2  
3.7 6.7  
VR = 200V  
Qrr  
40  
60  
70 105  
di/dt = 200A/µs  
di(rec)M/dt  
Diode Peak Rate of Fall of Recovery  
During tb  
280  
235  
—
—
Details of note  through „ are on the last page  
2
www.irf.com  
IRG4BC10SD-S/LPbF  
10.0  
8.0  
6.0  
4.0  
2.0  
0.0  
Duty cycle : 50%  
Tj = 125°C  
Tsink = 90°C Ta = 55°C  
Gate drive as specified  
Turn-on losses include effects of  
reverse recovery  
Power Dissipation = 9.2W for Heatsink Mount  
Power Dissipation = 1.8W for typical  
PCB socket Mount  
60%of rated  
voltage  
Ideal diodes  
0.1  
1
10  
100  
f , Frequency ( kHz )  
Fig. 1 - Typical Load Current vs. Frequency  
(Load Current = IRMS of fundamental)  
100  
10  
1
100  
°
T = 25 C  
J
°
°
T = 150 C  
T = 150 C  
J
J
10  
°
T = 25 C  
J
V
= 15V  
V
= 50V  
GE  
CC  
80µs PULSE WIDTH  
5µsPULSEWIDTH
1
0.5  
1.0  
1.5  
2.0  
2.5  
3.0  
6
8
10 12  
V
, Collector-to-Emitter Voltage (V)  
V
, Gate-to-Emitter Voltage (V)  
CE  
GE  
Fig. 2 - Typical Output Characteristics  
Fig. 3 - Typical Transfer Characteristics  
www.irf.com  
3
IRG4BC10SD-S/LPbF  
16  
3.00  
2.50  
2.00  
1.50  
1.00  
V
= 15V  
GE  
80 us PULSE WIDTH  
I
= 16A  
C
12  
8
I
I
=
=
8A  
4A  
C
C
4
0
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
25  
50  
75  
100  
125  
150  
°
T , Junction Temperature ( C)  
J
°
T , Case Temperature ( C)  
C
Fig. 4 - Maximum Collector Current vs. Case  
Fig. 5 - Typical Collector-to-Emitter Voltage  
Temperature  
vs. Junction Temperature  
10  
D = 0.50  
1
0.20  
0.10  
0.05  
0.02  
P
DM  
SINGLE PULSE  
(THERMAL RESPONSE)  
0.01  
0.1  
t
1
t
2
Notes:  
1. Duty factor D = t / t  
1
2
2. Peak T =P  
DM  
x Z  
+ T  
C
J
thJC  
0.01  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
t , Rectangular Pulse Duration (sec)  
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case  
4
www.irf.com  
IRG4BC10SD-S/LPbF  
20  
500  
400  
300  
200  
100  
0
V
CC  
I
C
= 400V  
= 8A  
V
= 0V,  
f = 1MHz  
C SHORTED  
ce  
GE  
C
= C + C  
ies  
ge  
gc ,  
C
= C  
res  
gc  
C
= C + C  
oes  
ce  
gc  
15  
10  
5
C
ies  
C
C
oes  
res  
0
1
10  
100  
0
5
10  
15  
20  
V
, Collector-to-Emitter Voltage (V)  
Q , Total Gate Charge (nC)  
CE  
G
Fig. 8 - Typical Gate Charge vs.  
Fig. 7 - Typical Capacitance vs.  
Gate-to-Emitter Voltage  
Collector-to-Emitter Voltage  
3.60  
3.55  
3.50  
3.45  
3.40  
3.35  
3.30  
100  
10  
1
100Ω  
V
V
= 480V  
R
= O
= 15V  
CC  
GE  
G
= 15V  
V
V
GE  
°
T
= 25  
= 8A  
C
= 480V  
J
C
CC  
I
I =  
C
A
16  
I =  
C
A
A
8
4
I =  
C
0.1  
0
20  
40  
60  
80  
100  
-60 -40 -20  
0
20 40 60 80 100 120 140 160  
°
T , Junction Temperature ( C )  
RG , Gate Resistance (Ω)  
J
Fig. 9 - Typical Switching Losses vs. Gate  
Fig. 10 - Typical Switching Losses vs.  
Resistance  
Junction Temperature  
www.irf.com  
5
IRG4BC10SD-S/LPbF  
100  
10  
1
15  
V
T
= 20V  
R
T
= 100  
100 Ω  
GE  
J
G
J
= 125 oC  
°
= 150 C  
V = 480V  
= 15V  
GE  
CC  
V
12  
9
6
3
SAFE OPERATING AREA  
10  
0
0
4
8
12  
16  
20  
1
100  
1000  
I
, Collector Current (A)  
V
, Collector-to-Emitter Voltage (V)  
C
CE  
Fig. 11 - Typical Switching Losses vs.  
Fig. 12 - Turn-Off SOA  
Collector Current  
100  
T = 150°C  
J
10  
T = 125°C  
J
T = 25°C  
J
1
0.1  
0.0  
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
Forward Voltage Drop - VFM ( V )  
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current  
6
www.irf.com  
IRG4BC10SD-S/LPbF  
50  
45  
40  
35  
30  
25  
20  
14  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
I
= 8.0A  
= 4.0A  
F
12  
I
F
I
I
= 8.0A  
= 4.0A  
F
F
10  
8
6
4
2
VR = 200V  
TJ = 125°C  
TJ = 25°C  
0
100  
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 15 - Typical Recovery Current vs. dif/dt  
Fig. 14 - Typical Reverse Recovery vs. dif/dt  
200  
1000  
VR= 200V  
TJ = 125°C  
TJ = 25°C  
VR = 200V  
TJ = 125°C  
TJ = 25°C  
160  
I
I
= 8.0A  
= 4.0A  
I
I
= 8.0A  
= 4.0A  
F
F
F
F
120  
80  
40  
0
A
100  
100  
100  
1000  
1000  
di /dt - (A/µs)  
f
di /dt - (A/µs)  
f
Fig. 16 - Typical Stored Charge vs. dif/dt  
Fig. 17 - Typical di(rec)M/dt vs. dif/dt,  
www.irf.com  
7
IRG4BC10SD-S/LPbF  
Same type  
device as  
D.U.T.  
430µF  
80%  
90%  
of Vce  
D.U.T.  
10%  
V
ge  
V
C
90%  
t
d(off)  
10%  
5%  
I
C
Fig. 18a - Test Circuit for Measurement of  
t
f
t
r
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf  
t
d(on)  
t=5µs  
E
on  
E
off  
E =(E +E  
ts on off  
)
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining  
Eoff, td(off), tf  
trr  
trr  
GATE VOLTAGE D.U.T.  
Qrr =  
Ic dt  
Ic  
∫
tx  
10% +Vg  
+Vg  
tx  
10% Irr  
10% Vcc  
Vcc  
DUT VOLTAGE  
AND CURRENT  
Vce  
Vpk  
Irr  
10% Ic  
Vcc  
Ipk  
90% Ic  
Ic  
DIODE RECOVERY  
WAVEFORMS  
5% Vce  
tr  
td(on)  
t2  
Eon = Vce Ic dt  
t4  
∫
Erec = 
t1  
Vd Ic dt  
∫
t3  
DIODE REVERSE  
RECOVERY ENERGY  
t1  
t2  
t3  
t4  
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,  
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,  
Defining Erec, trr, Qrr, Irr  
Defining Eon, td(on), tr  
8
www.irf.com  
IRG4BC10SD-S/LPbF  
Vg  
GATE SIGNAL  
DEVICE UNDER TEST  
CURRENT D.U.T.  
VOLTAGE IN D.U.T.  
CURRENT IN D1  
t0  
t1  
t2  
Figure 18e. Macro Waveforms for Figure 18a's Test Circuit  
480V  
4 X IC @25°C  
D.U.T.  
L
RL=  
1000V  
V *  
c
0 - 480V  
50V  
6000µF  
100V  
Figure 20. Pulsed Collector Current  
Test Circuit  
Figure 19. Clamped Inductive Load Test Circuit  
www.irf.com  
9
IRG4BC10SD-S/LPbF  
D2Pak Package Outline  
Dimensions are shown in millimeters (inches)  
D2Pak Part Marking Information  
THIS IS AN IRF530S WITH  
LOT CODE 8024  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
ASSEMBLED ON WW 02, 2000  
IN THE ASSEMBLY LINE "L"  
F530S  
DAT E CODE  
YEAR 0 = 2000  
WEEK 02  
Note: "P" in assembly line  
position indicates "Lead-Free"  
ASSEMBLY  
LOT CODE  
LINE L  
OR  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
F530S  
DATE CODE  
P = DE S I GNAT E S L E AD- F R E E  
PRODUCT (OPTIONAL)  
YEAR 0 = 2000  
AS S E MB L Y  
LOT CODE  
WEE K 02  
A = AS S E MB L Y S IT E CODE  
10  
www.irf.com  
IRG4BC10SD-S/LPbF  
TO-262 Package Outline  
Dimensions are shown in millimeters (inches)  
TO-262 Part Marking Information  
EXAMPLE: THIS IS AN IRL3103L  
LOT CODE 1789  
PART NUMBER  
INTERNATIONAL  
RECTIFIER  
LOGO  
AS SEMBLED ON WW 19, 1997  
IN T HE ASS EMBLY LINE "C"  
DATE CODE  
YEAR 7 = 1997  
WEEK 19  
Note: "P" in assembly line  
position indicates "Lead-Free"  
AS S E MB L Y  
LOT CODE  
LINE C  
OR  
PART NUMBER  
DAT E CODE  
INTERNATIONAL  
RECTIFIER  
LOGO  
P = DESIGNATES LEAD-FREE  
PRODUCT (OPTIONAL)  
YEAR 7 = 1997  
ASSEMBLY  
LOT CODE  
WE E K 19  
A = ASSEMBLYSITE CODE  
www.irf.com  
11  
IRG4BC10SD-S/LPbF  
D2Pak Tape & Reel Information  
Dimensions are shown in millimeters (inches)  
TRR  
1.60 (.063)  
1.50 (.059)  
1.60 (.063)  
1.50 (.059)  
4.10 (.161)  
3.90 (.153)  
0.368 (.0145)  
0.342 (.0135)  
FEED DIRECTION  
1.85 (.073)  
11.60 (.457)  
11.40 (.449)  
1.65 (.065)  
24.30 (.957)  
23.90 (.941)  
15.42 (.609)  
15.22 (.601)  
TRL  
1.75 (.069)  
1.25 (.049)  
10.90 (.429)  
10.70 (.421)  
4.72 (.136)  
4.52 (.178)  
16.10 (.634)  
15.90 (.626)  
FEED DIRECTION  
13.50 (.532)  
12.80 (.504)  
27.40 (1.079)  
23.90 (.941)  
4
330.00  
(14.173)  
MAX.  
60.00 (2.362)  
MIN.  
30.40 (1.197)  
MAX.  
NOTES :  
1. COMFORMS TO EIA-418.  
2. CONTROLLING DIMENSION: MILLIMETER.  
3. DIMENSION MEASURED @ HUB.  
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.  
26.40 (1.039)  
24.40 (.961)  
4
3
Notes:  
Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20)  
‚VCC=80%(VCES), VGE=20V, L=10µH, RG = 100W (figure 19)  
ƒPulse width ≤ 80µs; duty factor ≤ 0.1%.  
„Pulse width 5.0µs, single shot.  
ꢀThis only applies to TO-262 package.  
† This applies to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ).  
For recommended footprint and soldering techniques refer to application note #AN-994.  
Data and specifications subject to change without notice.  
This product has been designed and qualified for the Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information.08/04  
12  
www.irf.com  
Note: For the most current drawings please refer to the IR website at:  
http://www.irf.com/package/  

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 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.02V, @Vge=15V, Ic=7.8A)
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IRG4BC15UD-SPBF

 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
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IRG4BC15UD-STRLPBF

 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, LEAD FREE, PLASTIC, D2PAK-3
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