IRG4BC20MDS [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A); 超快软恢复二极管绝缘栅双极晶体管（ VCES = 600V ，的VCE（on ）典型值= 1.85V ， @ VGE = 15V ， IC = 11A）
| 型号： | IRG4BC20MDS |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A) |
| 文件： | 总11页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94116
IRG4BC20MD-S
Short Circuit Rated
Fast IGBT
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Rugged: 10µsec short circuit capable at VGS=15V
VCES = 600V
• Low VCE(on) for 4 to 10kHz applications
• IGBT Co-packaged with ultra-soft-recovery
antiparallel diode
VCE(on) typ. = 1.85V
@VGE = 15V, IC = 11A
• Industry standard D2Pak package
G
Benefits
• Offers highest efficiency and short circuit
E
n-channel
capability for intermediate applications
• Provides best efficiency for the mid range frequency
(4 to 10kHz)
• Optimized for Appliance Motor Drives, Industrial (Short
Circuit Proof) Drives and Intermediate Frequency
Range Drives
• High noise immune "Positive Only" gate drive-
Negative bias gate drive not necessary
• For Low EMI designs- requires little or no snubbing
• Single Package switch for bridge circuit applications
• Compatible with high voltage Gate Driver IC's
• Allows simpler gate drive
D2Pak
Absolute Maximum Ratings
Parameter
Max.
600
18
Units
V
VCES
C @ TC = 25°C
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Short Circuit Withstand Time
Diode Maximum Forward Current
Gate-to-Emitter Voltage
I
IC @ TC = 100°C
11
ICM
36
A
ILM
36
IF @ TC = 100°C
7.0
10
tsc
µs
A
IFM
36
VGE
± 20
60
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
24
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Thermal Resistance
Parameter
Min.
------
------
------
-----
Typ.
------
------
0.50
Max.
2.1
Units
RθJC
RθJC
RθCS
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
2.5
°C/W
------
80
-----
------
2 (0.07)
------
g (oz)
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1
3/6/01
IRG4BC20MD-S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage600 ---- ----
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.67 ---- V/°C VGE = 0V, IC = 1.0mA
Min. Typ. Max. Units
Conditions
V(BR)CES
V
VGE = 0V, IC = 250µA
VCE(on)
Collector-to-Emitter Saturation Voltage ---- 1.85 2.1
IC = 11A
VGE = 15V
---- 2.46 ----
---- 2.07 ----
V
IC = 18A
See Fig. 2, 5
IC = 11A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
4.0 ---- 6.5
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -11 ---- mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
3.0 3.6 ----
---- ---- 250
---- ---- 2500
---- 1.4 1.7
---- 1.3 1.6
S
VCE = 100V, IC = 11A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VFM
IGES
Diode Forward Voltage Drop
V
IC = 8.0A
See Fig. 13
IC = 8.0A, TJ = 150°C
VGE = ±20V
Gate-to-Emitter Leakage Current
---- ---- ±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
----
39
59
IC = 11A
nC VCC = 400V
VGE = 15V
Qge
Qgc
td(on)
tr
---- 5.3 8.0
See Fig. 8
----
----
----
20
21
37
30
----
----
TJ = 25°C
ns
IC = 11A, VCC = 480V
VGE = 15V, RG = 50Ω
td(off)
tf
Turn-Off Delay Time
Fall Time
---- 463 690
---- 340 510
---- 0.41 ----
---- 2.03 ----
---- 2.44 3.7
Energy losses include "tail" and
diode reverse recovery.
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 9, 10, 11, 18
td(on)
tr
td(off)
tf
----
----
19
41
----
----
TJ = 150°C, See Fig. 9, 10, 11, 18
ns
IC = 6.5A, VCC = 480V
Turn-Off Delay Time
Fall Time
---- 590 ----
---- 600 ----
---- 3.49 ----
---- 7.5 ----
---- 460 ----
VGE = 15V, RG = 50Ω
Energy losses include "tail" and
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ diode reverse recovery.
nH Measured 5mm from package
VGE = 0V
LE
Cies
Coes
Cres
trr
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
----
----
----
----
54
14
37
55
----
----
55
pF
ns
A
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
TJ = 25°C See Fig.
90
TJ = 125°C
TJ = 25°C See Fig.
TJ = 125°C 15
nC TJ = 25°C See Fig.
TJ = 125°C 16
---- 240 ---- A/µs TJ = 25°C See Fig.
---- 210 ---- TJ = 125°C 17
14
IF = 8.0A
Irr
Diode Peak Reverse Recovery Current ---- 3.5 5.0
---- 4.5 8.0
VR = 200V
Qrr
Diode Reverse Recovery Charge
----
65 138
---- 124 360
di/dt 200A/µs
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
2
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IRG4BC20MD-S
1.5
1.0
0.5
0.0
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Turn-on losses include effects of
reverse recovery
Power Dissipation = 13W
60% of rated
voltage
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
100
10
1
°
T = 150 C
J
10
°
T = 25 C
J
T = 150°C
1
J
T = 25°C
J
V
= 15V
GE
V
= 50V
CC
5µs PULSE WIDTH
20µs PULSE WIDTH
0.1
0.1
0.1
1.0
, Collector-to-Emitter Voltage (V)
10.0
6
8
10
12 14
16
V
, Gate-to-Emitter Voltage (V)
GE
V
CE
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
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3
IRG4BC20MD-S
20
4.0
3.0
2.0
1.0
V
= 15V
GE
80µs PULSE WIDTH
I
= 22A
C
15
10
5
I
I
= 11A
C
= 5.5A
C
0
-60 -40 -20
0
20 40 60 80 100 120 140
25
50
T
75
100
125
150
°
, Case Temperature ( C)
T
J
, Junction Temperature (°C)
C
Fig. 5 - Typical Collector-to-Emitter Voltage
Fig. 4 - Maximum Collector Current vs.
vs. Junction Temperature
Case Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
t
0.02
1
0.01
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =t / t
1
2
2. Peak T =P
x Z
+ T
thJC C
J
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum IGBT Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4BC20MD-S
20
16
12
8
800
600
400
200
0
V
= 0V,
f = 1MHz
C SHORTED
ce
V
I
= 400V
= 11A
CC
C
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
C
C
oes
4
res
0
1
10
100
0
10
20
30
40
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
2.5
2.4
2.3
100
V
V
= 480V
= 15V
CC
GE
R
= 50Ω
G
V
V
= 15V
GE
T = 25°C
J
= 480V
CC
I
= 11A
C
I
= 22A
C
10
I
= 11A
C
I
= 5.5A
C
1
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
R
, Gate Resistance (
)
Ω
T , Junction Temperature (°C)
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4BC20MD-S
10.0
100
10
1
V
T
= 20V
R
= 50Ω
GE
= 125°
G
TJ = 150°C
J
V
= 15V
GE
CC
8.0
6.0
4.0
2.0
0.0
V
= 480V
SAFE OPERATING AREA
5
10
15
20
25
1
10
100
1000
I
, Collector Current (A)
V
, Drain-to-Source Voltage (V)
C
DS
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
100
10
1
T
= 150°C
J
T
= 125°C
J
T
=
25°C
J
0.1
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
Forward Voltage Drop - V
(V)
FM
Fig. 13 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current
6
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IRG4BC20MD-S
100
10
1
100
80
60
40
20
0
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
I
F
= 16A
I
= 8.0A
F
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
I
= 4.0A
F
100
1000
100
1000
di /dt - (A/µs)
f
di /dt - (A/µs)
f
Fig. 15 - Typical Recovery Current vs. dif/dt
Fig. 14 - Typical Reverse Recovery vs. dif/dt
500
10000
VR = 200V
TJ = 125°C
TJ = 25°C
VR = 200V
TJ = 125°C
TJ = 25°C
400
300
I
= 4.0A
= 8.0A
F
I
= 16A
F
1000
I
F
200
100
0
I
= 16A
F
I
= 8.0A
F
I
= 4.0A
F
100
100
100
1000
1000
di /dt - (A/µs)
di /dt - (A/µs)
f
f
Fig. 16 - Typical Stored Charge vs. dif/dt
Fig. 17 - Typical di(rec)M/dt vs. dif/dt
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7
IRG4BC20MD-S
90% Vge
+Vge
Same type
Vce
device as
D.U.T.
90% Ic
10% Vce
Ic
Ic
430µF
5% Ic
80%
of Vce
D.U.T.
td(off)
tf
t1+5µS
Eoff =
Vce ic dt
∫
t1
Fig. 18a - Test Circuit for Measurement of
I
LM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t1
t2
Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining
Eoff, td(off), tf
trr
id dt
trr
G ATE VO LTA G E D .U .T.
Q rr =
Ic
∫
tx
10% +Vg
+Vg
tx
10% Irr
10% Vcc
Vcc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
10% Ic
Vcc
Ipk
90% Ic
Ic
DIO DE RE CO V ERY
W AVEFO RMS
5% Vce
tr
td(on)
t2
Vce ie dt
E on =
t4
∫
Erec = Vd id dt
t1
∫
t3
DIO DE REVE RSE
REC O VERY ENER G Y
t1
t2
t3
t4
Fig. 18d - Test Waveforms for Circuit of Fig. 18a,
Fig. 18c - Test Waveforms for Circuit of Fig. 18a,
Defining Erec, trr, Qrr, Irr
Defining Eon, td(on), tr
8
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IRG4BC20MD-S
Vg
G ATE SIG NAL
DEVICE U NDE R TEST
CUR REN T D .U .T.
VO LTAG E IN D.U.T.
CUR REN T IN D1
t0
t1
t2
Figure 18e. Macro Waveforms for ꢀigure 18a's Test Circuit
480V
4 X IC @25°C
L
D.U.T.
RL=
1000V
V *
c
0 - 480V
50V
6000µF
100 V
Figure 20. Pulsed Collector Current
Test Circuit
Figure 19. Clamped Inductive Load Test
Circuit
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9
IRG4BC20MD-S
D2Pak Package Outline
10.54 (.415)
10.29 (.405)
10.16 (.400)
REF.
- B -
1.32 (.052)
4.69 (.185)
4.20 (.165)
1.40 (.055)
- A -
MAX.
1.22 (.048)
2
6.47 (.255)
6.18 (.243)
1.78 (.070)
1.27 (.050)
15.49 (.610)
14.73 (.580)
2.79 (.110)
2.29 (.090)
1
3
2.61 (.103)
2.32 (.091)
5.28 (.208)
4.78 (.188)
8.89 (.350)
REF.
1.40 (.055)
1.14 (.045)
1.39 (.055)
1.14 (.045)
3X
0.55 (.022)
0.46 (.018)
0.93 (.037)
0.69 (.027)
3X
5.08 (.200)
0.25 (.010)
M
B A M
MINIMUM RECOMMENDED FOOTPRINT
11.43 (.450)
8.89 (.350)
LEAD ASSIGNMENTS
1 - GATE
NO TES:
1
2
3
4
DIMENSIONS AFTER SOLDER DIP.
17.78 (.700)
2 - DRAIN
3 - SOURCE
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH.
HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS.
3.81 (.150)
2.54 (.100)
2.08 (.082)
2X
2X
D2Pak Part Marking Information
A
INTERNATIONAL
RECTIFIER
PART NUMBER
F530S
LOGO
9246
1M
DATE CODE
(YYW W )
9B
ASSEMBLY
YY
=
YEAR
= W EEK
LOT CODE
W W
10
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IRG4BC20MD-S
Notes:
Repetitive rating: VGE=20V; pulse width limited by maximum junction tem-
perature (figure 20)
VCC=80%(VCES), VGE=20V, L=10µH, RG = 50Ω (figure 19)
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
D2Pak Tape & Reel Information
TR R
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059)
0.368 (.0145)
0.342 (.0135)
3.90 (.153)
F E ED D IR E C TIO N
TR L
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
F E E D D IR E C TIO N
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
M AX.
60.00 (2.362)
MIN.
30.40 (1.197)
M AX.
NOTES
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED
:
26.40 (1.039)
24.40 (.961)
4
@ HUB.
3
4. INCLUDES FLANGE DISTORTION
@
OUTER EDGE.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 3/01
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11
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