IRG4IBC30W [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG4IBC30W |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD 91791A
IRG4IBC30W
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
• Designed expressly for Switch-Mode Power
Supply and PFC (power factor correction)
applications
VCES=600V
• 2.5kV, 60s insulation voltage
• Industry-benchmark switching losses improve
efficiency of all power supply topologies
• 50% reduction of Eoff parameter
V
CE(on) typ. = 2.1V
G
@VGE = 15V, IC = 12 A
E
• Low IGBT conduction losses
• Latest-generation IGBT design and construction offers
tighter parameters distribution, exceptional reliability
• Industry standard Isolated TO-220 FullpakTM
outline
n-channel
Benefits
• Lower switching losses allow more cost-effective
operation than power MOSFETs up to 150 kHz
("hard switched" mode)
• Of particular benefit to single-ended converters and
boost PFC topologies 150W and higher
• Low conduction losses and minimal minority-carrier
recombination make these an excellent option for
resonant mode switching as well (up to >>300 kHz)
TO-220 FULLPAK
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
17
IC @ TC = 100°C
8.4
A
ICM
92
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
92
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
180
mJ
PD @ TC = 25°C
45
18
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
2.8
Units
RθJC
RθJA
Wt
Junction-to-Case - IGBT
Junction-to-Ambient, typical socket mount
Weight
–––
65
°C/W
2.0 (0.07)
–––
g (oz)
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1
12/30/00
IRG4IBC30W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
11
—
—
—
—
0.34
2.1
2.45
1.95
—
—
V/°C VGE = 0V, IC = 1.0mA
2.7
—
IC = 12A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
IC = 23A
V
See Fig.2, 5
—
IC = 12A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
16
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100 V, IC = 12A
VGE = 0V, VCE = 600V
—
250
2.0
1000
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 12A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
51
7.6
18
25
16
76
11
27
—
—
Qge
Qgc
td(on)
tr
nC VCC = 400V
VGE = 15V
See Fig.8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
99 150
67 100
IC = 12A, VCC = 480V
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ See Fig. 9, 10, 13, 14
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.13
0.13
—
—
0.26 0.35
td(on)
tr
td(off)
tf
24
17
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 12A, VCC = 480V
ns
Turn-Off Delay Time
Fall Time
150
150
0.55
7.5
980
71
VGE = 15V, RG = 23Ω
Energy losses include "tail"
mJ See Fig. 11,13, 14
nH Measured 5mm from package
VGE = 0V
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
LE
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
18
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 23Ω,
(See fig. 13a)
ꢀ
Pulse width 5.0µs, single shot.
t = 60s, f = 60Hz
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4IBC30W
25
20
15
10
5
For both:
Triangular wave:
Duty cycle: 50%
T
T
= 125°C
= 90°C
J
sink
Gate drive as specified
Power Dissipation = 10.6W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0
0.1
1
10
100
1000
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
100
°
T = 150 C
J
10
°
T = 150 C
°
T = 25 C
J
J
10
°
1
T = 25 C
J
V
= 50V
V
= 15V
CC
5µs PULSE WIDTH
GE
20µs PULSE WIDTH
0.1
5.0
1
6.0
7.0
8.0
9.0
10.0
11.0
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4IBC30W
3.0
2.5
2.0
1.5
20
15
10
5
V
= 15V
GE
80 us PULSE WIDTH
I
= 24 A
= 12 A
C
I
I
C
C
=
6 A
0
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
°
T , Junction Temperature ( C)
J
, Case Temperature ( C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs. Case
JunctionTemperature
Temperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
t
1
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
C
DM
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4IBC30W
2000
1500
1000
500
0
20
16
12
8
V
C
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 12A
GE
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
gc
oes
ce
C
ies
C
C
oes
res
4
0
0
10
20
30
40
50
60
1
10
100
Q
G
, Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
10
0.5
0.4
0.3
0.2
0.1
0.0
23Ω
= 15V
= 480V
R
V
V
CC
=
V
V
T
= 480V
G
GE
CC
GE
J
= 15V
°
= 25
C
I
= 12A
C
I
I
I
=
=
=
A
A
A
24
C
1
12
6
C
C
0.1
0.01
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
10
°
T , Junction Temperature ( C )
J
R , Gate Resistance (Ω)
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4IBC30W
1000
100
10
1.5
23Ω
=
V
T
= 20V
E
= 125°C
R
T
G
J
G
°
= 150 C
J
V
= 480V
= 15V
CC
V
GE
1.0
0.5
0.0
SAFE OPERATING AREA
1
0.1
1
10
100
1000
0
5
10
15
20
25
30
V
, Collector-to-E m itter V oltage (V )
I
, Collector-to-emitter Current (A)
C
C E
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
6
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IRG4IBC30W
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
D.U.T.
Fig. 14a - Switching Loss
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(on)
t=5µs
E
E
off
on
E
= (E
+E
)
off
ts
on
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7
IRG4IBC30W
Case Outline — TO-220 FULLPAK
10.60 (.417)
3.40 (.133)
4.80 (.189)
4.60 (.181)
ø
10.40 (.409)
3.10 (.123)
2.80 (.110)
2.60 (.102)
- A -
3.70 (.145)
3.20 (.126)
LEAD ASSIGMENTS
7.10 (.280)
6.70 (.263)
1- GATE
2- COLLECTOR
3- EMITTER
16.00 (.630)
15.80 (.622)
1.15 (.045)
NOTES:
MIN.
1
DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
1
2
3
2
CONTROLLING DIMENSION: INCH.
3.30 (.130)
3.10 (.122)
- B -
13.70 (.540)
13.50 (.530)
C
D
A
B
0.48 (.019)
0.44 (.017)
0.90 (.035)
0.70 (.028)
3X
1.40 (.055)
3X
3X
1.05 (.042)
2.85 (.112)
2.65 (.104)
0.25 (.010)
A
M
B
M
MINIMUM CREEPAG E
DISTANCE BETW EEN
A-B-C-D = 4.80 (.189)
2.54 (.100)
2X
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 12/00
8
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