IRG4PC20UPBF [INFINEON]
UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ); 速度超快1GBT （ VCES = 600V ， VCE （ ON） （典型值） = 1.85V ， @ VGE = 15V ， IC = 6.5A ）
| 型号： | IRG4PC20UPBF |
| 厂家： | 
Infineon |
| 描述： | UltraFast Speed 1GBT (VCES=600V , VCE(on)typ.=1.85V , @VGE=15V , Ic=6.5A ) |
| 文件： | 总8页 (文件大小：694K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97289
IRG4PC20UPbF
UltraFast Speed IGBT
PROVISIONAL
INSULATED GATE BIPOLAR TRANSISTOR
Features
C
VCES=600V
UltraFast: optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCE(on) typ. = 1.85V
G
@VGE = 15V, IC = 6.5A
E
Industry standard TO-247AC package
Lead-Free
n-channel
C
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBTs
E
C
G
TO-247AC
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
600
Collector-toEmitter Breakdown Voltage
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Pulsed Collector Current
V
IC @ TC = 25°C
13
A
IC @ TC = 100°C
6.5
ICM
52
ILM
52
Clamped Inductive Load Current
Gate-to-Emitter Voltage
VGE
±20
V
mJ
W
EARV
5.0
Reverse Voltage Avalanche Energy
Power Dissipation
PD @TC = 25°C
60
24
PD @TC = 100°C
Power Dissipation
TJ
-55 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
°C
N
300 (0.063 in.) (1.6mm from case)
10lb in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
2.1
Units
RθJC
Junction-to-Case
Rθ
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
–––
6.0 (0.21)
–––
40
–––
°C/W
g (oz)
CS
Rθ
JA
Wt
www.irf.com
1
07/11/07
PROVISIONAL
IRG4PC20UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 250µA
GE = 0V, ICE = 1.0A
VGE = 0V, ICE = 1.0mA
Parameter
Min. Typ. Max. Units
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
600
18
–––
–––
0.69
1.85
2.27
1.87
–––
-11
–––
–––
–––
2.1
V
V
V
V(BR)ECS
∆V(BR)CES/∆TJ
–––
–––
V/°C
V
GE = 15V, ICE = 6.5A
GE = 15V, ICE = 13A
V
VCE(on)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
–––
–––
6.0
V
V
VGE = 15V, ICE = 6.5A, TJ = 150°C
VCE = VGE, ICE = 250µA
–––
3.0
VGE(th)
∆
gfe
∆
VGE(th)/ TJ Gate Threshold Voltage Coefficient
–––
1.4
––– mV/°C
V
V
V
CE = 100V, ICE = 6.5A
Forward Transconductance
4.3
–––
250
2.0
S
CE = 600V, VGE = 0V
ICES
Collector-to-Emitter Leakage Current
–––
–––
–––
–––
–––
–––
–––
µA
CE = 10V, VGE = 0V, TJ = 25°C
VCE = 600V, VGE = 0V, TJ = 150°C
GE = 20V
––– 1000
V
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
–––
–––
100
nA
VGE = -20V
-100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
VCE = 400V
IC = 6.5A
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge
Turn-On delay time
Rise time
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
27
4.5
10
41
Qge
Qgc
td(on)
tr
6.8
nC
VGE = 15V
16
21
–––
–––
130
180
–––
–––
0.4
IC = 6.5A, VCC = 480V
13
ns
td(off)
tf
VGE = 15V, RG = 50Ω
Turn-Off delay time
Fall time
86
TJ = 25°C
120
0.10
0.12
0.22
20
E(on)
E(off)
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Energy losses include "tail"
mJ
ns
td(on)
tr
td(off)
tf
IC = 6.5A, VCC = 480V
–––
–––
–––
–––
–––
–––
–––
–––
–––
VGE = 15V, RG = 50Ω
14
TJ = 150°C
Turn-Off delay time
Fall time
190
140
0.42
7.5
530
39
Energy losses include "tail"
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
LE
nH Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
VCE = 30V
pF
Output Capacitance
Reverse Transfer Capacitance
ƒ = 1.0MHz
7.4
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 50Ω.
Repetitive rating; pulse width limited by maximum
junction temperature.
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
www.irf.com
PROVISIONAL
IRG4PC20UPbF
25
20
15
10
5
For both:
Duty cycle: 50%
= 125°C
Triangular wave:
T
J
T
sink
= 90°C
Gate drive as specified
Power Dissipation = 13W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
I
Ideal diodes
A
0
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
100
10
1
100
TJ = 25°C
TJ = 150°C
TJ = 150°C
10
T = 25°C
J
1
V CC = 10V
VGE = 15V
5µs PULSE WIDTH
20µs PULSE WIDTH
A
0.1
0.1
4
6
8
10
12
0.1
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
A
www.irf.com
3
PROVISIONAL
IRG4PC20UPbF
14
12
10
8
2.6
2.2
1.8
1.4
1.0
V
= 15V
GE
VGE = 15V
80µs PULSE WIDTH
C
I
= 13A
IC = 6.5A
6
4
C
I
= 3.3A
2
A
0
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Case Temperature (°C)
C
T , Junction Temperature (°C)
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Collector-to-Emitter Voltage vs.
Temperature
JunctionTemperature
10
D = 0.50
1
0.20
0.10
0.05
P
DM
0.1
0.02
0.01
t
1
SINGLE PULSE
t
2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
thJC
1
2. Peak T = P
J
x Z
+ T
C
DM
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t , Rectangular Pulse Duration (sec)
1
Fig.6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
www.irf.com
4
PROVISIONAL
IRG4PC20UPbF
1000
800
600
400
200
0
20
V
C
C
C
= 0V,
f = 1MHz
VCE = 400V
IC = 6.5A
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
gc
ce
= C
= C + C
ce
gc
16
12
8
C
ies
C
oes
C
res
4
A
A
0
1
10
100
0
5
10
15
20
25
30
V
, Collector-to-Emitter Voltage (V)
Q , Total Gate Charge (nC)
g
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-EmitterVoltage
Gate-to-EmitterVoltage
0.23
VCC = 480V
VGE = 15V
TJ = 25°C
IC = 6.5A
0.22
0.21
0.20
A
0
10
20
30
40
50
60
R , Gate Resistance ( )
Ω
G
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
www.irf.com
5
PROVISIONAL
IRG4PC20UPbF
1.0
1000
100
10
V
= 20V
= 125°C
RG = 50
Ω
G
E
T
J
T
V
= 150°C
= 480V
J
CC
0.8
0.6
0.4
0.2
0.0
VGE = 15V
SAFE OPERATING AREA
1
A
0.1
0
2
4
6
8
10
12
14
1
10
100
1000
I
, Collector-to-Emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
6
www.irf.com
PROVISIONAL
IRG4PC20UPbF
L
D.U.T.
480V
RL =
V *
C
4 X IC@25°C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching
Loss Test Circuit
D.U.T.
Driver*
V
C
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
www.irf.com
7
PROVISIONAL
IRG4PC20UPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/07
8
www.irf.com
相关型号：
IRG4PC30F
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
INFINEON
IRG4PC30F-E
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC30F-EPBF
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC30FD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)
INFINEON
IRG4PC30FD-E
Insulated Gate Bipolar Transistor, 31A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC30FDPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Fast CoPack 1GBT
INFINEON
IRG4PC30K
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
INFINEON
IRG4PC30K-E
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC30K-EPBF
Insulated Gate Bipolar Transistor, 28A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN
INFINEON
IRG4PC30KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)
INFINEON
©2020 ICPDF网 联系我们和版权申明