IRG4P254S [INFINEON]
INSULATED GATE BIPOLAR TRANSISOR; 绝缘栅双极TRANSISOR
| 型号： | IRG4P254S |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISOR |
| 文件： | 总8页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -91591A
IRG4P254S
Standard Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Standard: Optimized for minimum saturation
voltage and operating frequencies up to 10kHz
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
VCES =250V
V
CE(on) typ. = 1.32V
G
• Industry standard TO-247AC package
@VGE = 15V, IC = 55A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• High Power density
• Lower conduction losses than similarly rated MOSFET
• Lower Gate Charge than equivalent MOSFET
• Simple Gate Drive characteristics compared to Thyristors
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
250
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
98*
IC @ TC = 100°C
55
A
ICM
196
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
196
VGE
± 20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
160
mJ
PD @ TC = 25°C
200
W
PD @ TC = 100°C
Maximum Power Dissipation
78
TJ
Operating Junction and
-55 to + 150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
300 (0.063 in. (1.6mm) from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.64
–––
40
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
–––
6.0 (0.21)
–––
* Package limited to 70A
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1
4/15/2000
IRG4P254S
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
250
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
43
—
—
—
—
0.33
V/°C VGE = 0V, IC = 1.0mA
1.32 1.5
IC = 55A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
1.69
1.31
—
—
—
IC =98A
V
See Fig.2, 5
IC =55A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-12
63
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100V, IC = 55A
—
250
2.0
VGE = 0V, VCE = 250V
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 250V, TJ = 150°C
—
1000
±100
IGES
Gate-to-Emitter Leakage Current
—
nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 300 IC =55A
Conditions
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Qge
Qgc
td(on)
tr
29
66
40
44
44
99
—
—
nC
VCC = 200V
VGE = 15V
See Fig. 8
TJ = 25°C
ns
td(off)
tf
Turn-Off Delay Time
FallTime
270 400
510 760
IC = 55A, VCC = 200V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 9, 10, 14
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
RiseTime
0.38
3.50
—
—
mJ
ns
E
ts
3.88 5.3
td(on)
tr
td(off)
tf
38
45
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 55A, VCC = 200V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 11, 14
Turn-Off Delay Time
FallTime
400
940
6.52
13
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
4500
510
100
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0Ω,
(See fig. 13a)
Pulse width 5.0µs, single shot.
Repetitive rating; pulse width limited by maximum
junction temperature.
2
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IRG4P254S
120
100
F or both:
Triangular wave:
D uty cycle: 50%
I
T
T
= 125°C
J
= 90°C
sink
G ate drive as specified
Pow er D issip ation 4 0W
C lam p vo ltage:
80 % of rate d
=
S q uare wave:
6 0% o f ra t ed
voltage
I
20
0
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
1000
100
10
T = 150oC
J
T = 150oC
J
T = 25oC
J
10
T = 25 oC
J
V
= 50V
CC
V
= 15V
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
1
1
0.1
5
6
7
8
9
10
1
10
V
, Gate-to-Emitter Voltage (V)
V
, Collector-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4P254S
100
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
CURRENT LIMITED BY THE PACKAGE
80
60
40
20
0
I
= 110A
C
I
I
= 55A
C
C
=27.5A
25
50
T
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
°
, Case Temperature ( C)
T
, Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs.JunctionTemperature
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
0.01
P
SINGLE PULSE
(THERMAL RESPONSE)
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =t / t
1
2
2. Peak T =P
DM
x Z
+ T
thJC C
J
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6-MaximumEffectiveTransientThermalImpedance,Junction-to-Case
4
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IRG4P254S
20
16
12
8
8000
6000
4000
2000
0
V
I
= 200V
= 55A
V
C
= 0V,
f = 1MHz
C SHORTED
ce
CC
C
GE
= C + C
ies
ge
gc
gc ,
C
= C
res
C
= C + C
oes
ce
gc
C
ies
C
C
oes
4
res
0
1
10
100
0
40
80
120
160
200
V
, Collector-to-Emitter Voltage (V)
CE
Q
G
, Total Gate Charge (nC)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
5.0
4.0
3.0
100
10
1
5.0Ω
V
V
T
= 200V
R
=
= 15V
CC
GE
J
G
= 15V
V
GE
°
= 25
C
V
CC
= 200V
I
= 55A
C
110
55
I
=
=
A
A
C
I
I
C
C
=27.5A
0.1
-60 -40 -20
0
20 40 60 80 100 120 140 160
0
10
20
30
40
50
°
T , Junction Temperature ( C )
R
, Gate Resistance ( Ω )
G
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4P254S
20
1000
100
10
5.0Ω
=
R
G
T
J
V
T
= 20V
GE
J
= 125 oC
°
= 150 C
V
V
GE
= 200V
= 15V
CC
15
10
5
SAFE OPERATING AREA
10
0
0
20
40
60
80
100
120
1
100
1000
I
, Collector-to-emitter Current (A)
V
, Collector-to-Emitter Voltage (V)
C
CE
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4P254S
L
D.U.T.
200V
RL =
V
*
C
4 X IC@25°C
50V
0 - 200V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13a - Clamped Inductive
Fig. 13b - Pulsed Collector
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 200V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d (off)
Waveforms
10%
5%
I
C
t
f
t
r
t
d(o n )
t=5µs
E
E
o ff
o n
E
= (E
+E
)
o ff
ts
o n
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7
IRG4P254S
Case Outline and Dimensions — TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
*
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
0.40 (.01 6)
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105
IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936
Data and specifications subject to change without notice.
4/2000
8
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