IRG4MC50F [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG4MC50F |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总8页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -94274A
IRG4MC50F
Fast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
C
Features
• Electrically Isolated and Hermetically Sealed
• Simple Drive Requirements
• Latch-proof
V
CES = 600V
• Fast Speed operation 3 kHz - 8 kHz
• High operating frequency
VCE(on) max = 2.0V
G
• Switching-loss rating includes all "tail" losses
• Ceramic eyelets
@VGE = 15V, IC = 30A
E
n-channel
Benefits
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
IR Hi-Rel Generation 3 IGBT's
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-254AA
Absolute Maximum Ratings
Parameter
Max.
600
35*
Units
V
VCES
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current ➀
Clamped Inductive Load Current ➀
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
30
A
ICM
140
140
± 20
150
60
ILM
VGE
V
PD @ TC = 25°C
Maximum Power Dissipation
W
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
-55 to + 150
TSTG
°C
g
300 (0.063in./1.6mm from case for 10s)
9.3 (typical)
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
°C/W
R
Junction-to-Case
—
—
0.83
thJC
* Current is limited by internal wire diameter
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1
02/08/02
IRG4MC50F
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 1.0 mA
VGE = 0V, IC = 1.0 A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
600 ––– –––
V
Emitter-to-Collector Breakdown Voltage 17 ––– –––
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ––– 0.58 ––– V/°C VGE = 0V, IC = 1.0 mA
––– ––– 2.0
––– ––– 2.2
––– ––– 1.9
3.0 ––– 6.0
IC = 30A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
IC = 35A
See Fig.2, 5
IC = 30A , TJ = 125°C
VCE = VGE, IC = 1.0 mA
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ––– -11.8 ––– mV/°C VCE = VGE, IC = 250 µA
gfe
Forward Transconductance
21 ––– –––
––– ––– 250
––– ––– 2000
S
V
CE ≥ 15V, IC = 30A
VGE = 0V, VCE = 480V
VGE = 0V, VCE = 480V, TJ = 125°C
ICES
Zero Gate Voltage Collector Current
µA
IGES
Gate-to-Emitter Leakage Current
––– ––– ±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 30A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
––– ––– 290
Qge
Qgc
td(on)
tr
––– ––– 42
––– ––– 97
––– ––– 50
––– ––– 25
––– ––– 350
––– ––– 300
––– ––– 3.0
––– ––– 50
––– ––– 25
––– ––– 475
––– ––– 400
––– ––– 6.0
––– 6.8 –––
nC VCC = 480V
VGE = 15V
See Fig. 8
TJ = 25°C
IC = 30A, VCC = 480V
VGE = 15V, RG = 2.35Ω
Energy losses include "tail"
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
Ets
Total Switching Loss
Turn-On Delay Time
Rise Time
mJ See Fig. 10, 11, 13, 14
TJ = 125°C,
td(on)
tr
td(off)
tr
ns
IC = 30A, VCC = 480V
Turn-Off Delay Time
Rise Time
VGE = 15V, RG = 2.35Ω
Energy losses include "tail"
Ets
Total Switching Loss
Total Inductance
mJ See Fig. 13, 14
LC+LE
nH Measured from Collector lead (6mm/
0.25in. from package) to Emitter
lead (6mm / 0.25in. from package)
VGE = 0V
Cies
Coes
Cres
Input Capacitance
––– 4100 –––
––– 250 –––
––– 49 –––
Output Capacitance
pF
VCC = 30V
See Fig. 7
Reverse Transfer Capacitance
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
VCC = 80%(VCES), VGE = 20V, L = 100µH, RG = 2.35Ω,
(See fig. 13a)
2
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IRG4MC50F
60
40
20
0
Square wave:
Triangular wave:
60% of rated
voltage
Clamp voltage:
80% of rated
Ideal diodes
For both:
Duty cycle : 50%
Tj = 125°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 33.7W
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=IPK
)
1000
1000
100
100
10
1
°
T = 150 C
J
°
T = 25 C
J
10
°
T = 150 C
J
°
T = 25 C
J
V
= 15V
V
= 50V
GE
CC
20µs PULSE WIDTH
5µs PULSE WIDTH
1
0.1
1
10
4
6
8
10 12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4MC50F
3.0
2.0
1.0
60
V
= 15V
GE
80µs PULSE WIDTH
VGE = 15V
LIMITED BY PACKAGE
50
40
30
20
10
0
I
= 60A
C
I
= 30A
= 15A
C
I
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
T , Junction Temperature (°C)
J
T
, Junction Temperature (°C )
J
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs. Case
JunctionTemperature
Temperature
1
D = 0.50
0.20
0.10
0.05
0.1
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4MC50F
8000
6000
4000
2000
0
20
16
12
8
V
= 0V,
f = 1MHz
C
480V
= 30A
V
I
=
GE
CC
C
C
= C + C
SHORTED
ce
ies
ge
gc ,
gc
C
= C
gc
res
C
= C + C
oes
ce
C
ies
C
oes
4
C
res
0
1
10
100
0
40
80
120
160
200
V
, Collector-to-Emitter Voltage (V)
Q
G
, Total Gate Charge (nC)
CE
Fig. 8 - Typical Gate Charge vs.
Fig. 7 - Typical Capacitance vs.
Gate-to-EmitterVoltage
Collector-to-EmitterVoltage
100
10
1
3.00
2.50
2.00
V
V
= 480V
= 15V
Ω
=2.35
R
V
CC
GE
G
= 15V
GE
T = 25°C
V
= 480V
J
CC
I
= 60A
= 30A
C
I
= 30A
C
I
C
I
= 20A
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
R
, Gate Resistance (
)
Ω
T , Junction Temperature (°C)
G
J
Fig. 10 - Typical Switching Losses vs.
Fig. 9 - Typical Switching Losses vs. Gate
Junction Temperature
Resistance
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5
IRG4MC50F
12.0
1000
100
10
V
T
= 20V
R
= 2.35Ω
GE
= 125°
G
125°C
TJ =
J
V
= 15V
GE
CC
V
= 480V
8.0
4.0
0.0
SAFE OPERATING AREA
1
10
20
I
30
40
50
60
0.1
1
10
100
1000
, Collector Current (A)
V
, Drain-to-Source Voltage (V)
C
DS
Fig. 12 - Turn-Off SOA
Fig. 11 - Typical Switching Losses vs.
Collector-to-EmitterCurrent
6
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IRG4MC50F
L
D.U.T.
720V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 720V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 720V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4MC50F
Case Outline and Dimensions —TO-254AA
0.12 [.005]
0.12 [.005]
6.60 [.260]
6.32 [.249]
6.60 [.260]
6.32 [.249]
13.84 [.545]
13.59 [.535]
13.84 [.545]
13.59 [.535]
3.78 [.149]
3.53 [.139]
3.78 [.149]
3.53 [.139]
1.27 [.050]
1.02 [.040]
1.27 [.050]
1.02 [.040]
A
A
20.32 [.800]
20.07 [.790]
20.32 [.800]
20.07 [.790]
17.40 [.685]
16.89 [.665]
17.40 [.685]
16.89 [.665]
B
13.84 [.545]
13.59 [.535]
22.73 [.895]
21.21 [.835]
13.84 [.545]
13.59 [.535]
B
R 1.52 [.060]
1
2
3
1
2
3
C
4.06 [.160]
3.56 [.140]
17.40 [.685]
16.89 [.665]
0.84 [.033]
MAX.
4.82 [.190]
3.81 [.150]
1.14 [.045]
0.89 [.035]
3X
3.81 [.150]
2X
1.14 [.045]
0.89 [.035]
0.36 [.014]
B A
3X
3.81 [.150]
3.81 [.150]
2X
0.36 [.014]
B
A
NOTES :
PIN ASSIGNMENTS
1. DIMENSIONING & TOLERANCING PER ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS [INCHES].
3. CONTROLLING DIMENS ION: INCH.
1=COLLECTOR
2=EMITTER
3=GATE
4. CONF OR MS T O JE DE C OU T LI NE T O-254AA.
CAUTION
BERYLLIA WARNING PER MIL-PRF-19500
Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them
which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids
that will produce fumes containing beryllium.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 02/02
8
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