IRG4PC40KPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT; 绝缘栅双极晶体管短路额定IGBT超快
| 型号： | IRG4PC40KPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT |
| 文件： | 总8页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95646
IRG4PC40KPbF
Short Circuit Rated
UltraFast IGBT
INSULATEDGATEBIPOLARTRANSISTOR
C
Features
Short Circuit Rated UltraFast: Optimized for high
operating frequencies >5.0 kHz , and Short Circuit
Rated to 10µs @ 125°C, VGE = 15V
Generation 4 IGBT design provides higher efficiency
than Generation 3
VCES = 600V
VCE(on) typ. = 2.1V
G
Industry standard TO-247AC package
Lead-Free
@VGE = 15V, IC = 25A
E
n-channel
Benefits
Generation 4 IGBTs offer highest efficiency available
IGBTs optimized for specified application conditions
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
42
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
25
A
ICM
84
ILM
84
tsc
10
µs
V
VGE
±20
15
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
mJ
W
PD @ TC = 25°C
160
65
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.77
40
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
6 (0.21)
7/26/04
IRG4PC40KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
600
V
V
Emitter-to-Collector Breakdown Voltage 18
3.0
7.0
0.46
V/°C VGE = 0V, IC = 1.0mA
IC = 25A
2.10 2.6
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
2.70
2.14
IC = 42A
V
See Fig.2, 5
IC = 25A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-13
14
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
S
VCE = 100 V, IC = 25A
VGE = 0V, VCE = 600V
250
2.0
2000
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 25A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
10
120 180
Qge
Qgc
td(on)
tr
16
51
30
15
24
77
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
Fall Time
140 210
140 210
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
Eon
Eoff
Ets
tsc
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.62
0.33
mJ See Fig. 9,10,14
0.95 1.4
µs
VCC = 400V, TJ = 125°C
GE = 15V, RG = 10Ω , VCPK < 500V
V
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
30
18
TJ = 150°C,
IC = 25A, VCC = 480V
VGE = 15V, RG = 10Ω
Energy losses include "tail"
ns
Turn-Off Delay Time
Fall Time
190
150
1.9
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ See Fig. 11,14
LE
nH
Measured 5mm from package
Cies
Coes
Cres
1600
130
55
VGE = 0V
pF
VCC = 30V
= 1.0MHz
See Fig. 7
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited by maximum
junction temperature.
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω,
(See fig. 13a)
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
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IRG4PC40KPbF
60
40
20
0
For both:
Duty cycle: 50%
= 125°C
Triangular wave:
T
J
T
= 90°C
sink
Gate drive as specified
Power Dissipation = 35W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
10
1
100
TJ
= 150°C
T = 150oC
J
TJ = 25°C
10
T = 25oC
J
V
= 15V
V CC = 50V
5µs PULSE WIDTH
GE
20µs PULSE WIDTH
A
1
0.1
1
10
5
7
9
11
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
CE
GE
Fig. 2 - Typical Output Characteristics
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Fig. 3 - Typical Transfer Characteristics
3
IRG4PC40KPbF
50
40
30
20
10
0
5.0
4.0
3.0
2.0
1.0
V
= 15V
GE
80 us PULSE WIDTH
I
= 50 A
C
I
I
= 25 A
=12.5 A
C
C
25
50
75
100
125
150
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
T , Case Temperature ( C)
°
T , Junction Temperature ( C)
C
J
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
D = 0.50
0.20
0.1
0.10
0.05
P
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
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4
IRG4PC40KPbF
3000
2500
2000
1500
1000
500
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
CC
I
C
= 400V
= 25A
GE
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
4
C
C
oes
res
0
0
1
10
100
0
20
40
60
80
100
120
140
V
, Collector-to-Emitter Voltage (V)
Q
, Total Gate Charge (nC)
CE
G
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
1.80
10
V
V
T
= 480V
R
= 10OΩhm
= 15V
= 480V
CC
GE
J
G
= 15V
V
GE
°
= 25
C
V
I
C
=
A
50
CC
I
= 25A
1.60
1.40
1.20
1.00
0.80
C
I
I
=
=
A
A
25
C
1
12.5
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R
G
, Gate Resistance (Ohm)
T , Junction Temperature ( C )
Ω
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC40KPbF
1000
100
10
5.0
V
T
= 20V
R
T
= 10Om
Ω
G
J
GE
J
°
= 125 oC
= 150 C
V = 480V
= 15V
GE
CC
V
4.0
3.0
2.0
1.0
0.0
SAFE OPERATING AREA
10
1
1
100
1000
0
10
20
30
40
50
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
6
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IRG4PC40KPbF
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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7
IRG4PC40KPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MB L Y
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASS EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DAT E CODE
YEAR 0 = 2000
WE E K 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
8
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