IRG4PC50KD-E [INFINEON]
Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN;
| 型号： | IRG4PC50KD-E |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 52A I(C), 600V V(BR)CES, N-Channel, TO-247AD, TO-247AD, 3 PIN 超快软恢复二极管 快速软恢复二极管 局域网 电动机控制 栅 晶体管 |
| 文件： | 总9页 (文件大小：121K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 91583B
IRG4PC50K
Short Circuit Rated
UltraFast IGBT
INSULATEDGATEBIPOLARTRANSISTOR
C
Features
• High short circuit rating optimized for motor control,
tsc =10µs, @360V VCE (start), TJ = 125°C,
VGE = 15V
VCES = 600V
• Combines low conduction losses with high
switching speed
V
CE(on) typ. = 1.84V
G
• Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
@VGE = 15V, IC = 30A
E
n-channel
Benefits
• As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
• Latest generation 4 IGBTs offer highest power
density motor controls possible
• This part replaces the IRGPC50K and IRGPC50M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
IC @ TC = 25°C
52
IC @ TC = 100°C
30
A
ICM
104
ILM
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
104
tsc
10
µs
V
VGE
±20
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
170
mJ
W
PD @ TC = 25°C
200
PD @ TC = 100°C
78
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.64
–––
40
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
–––
6 (0.21)
–––
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1
4/15/2000
IRG4PC50K
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ TemperatureCoeff.ofBreakdownVoltage
Collector-to-Emitter Breakdown Voltage
600
—
—
—
—
—
V
V
Emitter-to-Collector Breakdown Voltage 18
—
—
—
—
3.0
—
17
—
—
—
—
0.47
V/°C VGE = 0V, IC = 1.0mA
1.84 2.2
IC = 30A
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-EmitterSaturationVoltage
Gate Threshold Voltage
2.19
1.79
—
—
—
IC = 52A
See Fig.2, 5
V
IC = 30A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
—
∆VGE(th)/∆TJ TemperatureCoeff.ofThresholdVoltage
-12
24
—
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
—
S
VCE = 100 V, IC = 30A
250
2.0
5000
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
µA
—
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
—
IGES
Gate-to-Emitter Leakage Current
—
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 30A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
—
10
200 300
25 38
85 130
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
38
34
—
—
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
FallTime
160 240
79 120
IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 9,10,14
Eon
Eoff
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.49
0.68
—
—
mJ
µs
E
ts
1.12 1.4
tsc
—
—
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on)
tr
td(off)
tf
Turn-On Delay Time
RiseTime
—
—
—
—
—
—
—
—
—
37
35
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 11,14
ns
Turn-Off Delay Time
FallTime
260
170
2.34
13
E
ts
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
3200
370
95
pF
VCC = 30V
See Fig. 7
ƒ = 1.0MHz
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited by maximum
junction temperature.
Ω
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
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IRG4PC50K
70
60
50
40
30
20
10
0
F or both:
Tria ng ula r wave:
Duty cycle: 50%
T
T
= 125°C
J
=
90°C
sink
G ate drive as specified
Pow er D iss ip ation 4 0W
=
C lam p v olta ge:
80 % o f ra te d
S qu are wave:
6 0% of rat ed
voltag e
I
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
1000
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
V
= 50V
CC
V
= 15V
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
1
1
5
6
7
8
9
10 11
12
1
10
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC50K
3.0
2.0
1.0
60
50
40
30
20
10
0
V
= 15V
GE
80 us PULSE WIDTH
I
= 60 A
C
I
I
= 30 A
= 15 A
C
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
T , Junction Temperature ( C)
°
T , Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D =
t / t
1 2
2. Peak T = P
DM
x Z
+ T
C
J
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50K
5000
4000
3000
2000
1000
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
C
V
I
= 400V
= 30A
GE
ies
res
oes
CC
C
= C + C
SHORTED
ce
ge
gc ,
gc
= C
gc
= C + C
ce
C
ies
4
C
oes
C
res
0
0
40
80
120
160
200
1
10
100
Q , Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
4.0
3.0
2.0
1.0
0.0
100
10
1
V
V
T
= 480V
R
V
V
CC
= 5.0Ω
= 15V
= 480V
CC
GE
J
G
GE
= 15V
°
= 25
C
I
= 30A
C
I
=
60 A
C
I
I
=
=
30 A
15 A
C
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R
G
, Gate Resistance (
(Ω)
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC50K
8.0
1000
100
10
5.0Ω
= 150 C
= 480V
= 15V
V
T
= 20V
R
T
= 5
G
J
GE
J
= 125 oC
°
V
CC
V
GE
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
10
1
100
1000
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
6
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IRG4PC50K
L
D.U.T.
480V
4 X IC@25°C
V
*
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V pow er supply, pulse width and inductor
w ill increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
D river*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(o ff)
Waveforms
10%
5%
I
C
t
f
t
r
t
d (o n)
t=5µs
E
E
o ff
o n
E
= (E
+E
)
off
ts
o n
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7
IRG4PC50K
Case Outline and Dimensions — TO-247AC
N O TE S :
-
D -
3.65 (.1 43 )
1
D IM E N S IO N S & T O LE R A N C IN G
5 .30 ( .20 9)
4 .70 ( .18 5)
15 .90 (.6 26)
3.55 (.1 40 )
P E R A N S I Y 14.5M , 1982.
C O N TR O LLIN G D IM E N S IO N : IN C H .
D IM E N S IO N S A R E S H O W N
M ILLIM E TE R S (IN C H E S ).
C O N FO R M S TO JE D E C O U TLIN E
T O -247AC .
15 .30 (.6 02)
M
0.25 (.01 0)
M
D
B
2
3
2.50 (.089)
1.50 (.059)
4
-
B -
-
A -
5.5 0 (.2 17)
4
20 .30 (.8 00)
19 .70 (.7 75)
5.5 0 (.2 17)
4.5 0 (.1 77)
2X
LE A D A S S IG N M E N T S
1
2
3
4
- G A T E
- C O LLE C TO R
- EM IT TE R
- C O LLE C TO R
1
2
3
-
C -
14 .80 (.583 )
14 .20 (.559 )
4.30 (.1 70)
3.70 (.1 45)
LO N G E R LE A D ED (20m m )
V E R S IO N A V A ILA B LE (TO -247A D )
T O O R D E R A D D "-E " S U FF IX
T O P A R T N U M B ER
*
*
2.40 ( .094)
2.00 ( .079)
2 X
0.80 (.03 1)
0.40 (.01 6)
1.40 (.056)
1.00 (.039)
0.25 (.010)
3X
3 X
2 .60 ( .10 2)
2 .20 ( .08 7)
M
S
A
C
5.45 (.2 15 )
3.40 (.1 3 3)
3.00 (.1 1 8)
2 X
CONFORMS TO JEDEC OUTLINE TO-247AC (TO-3P)
D im e n sion s in M illim e te rs a n d (In ch es )
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000
IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111
IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630
IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936
Data and specifications subject to change without notice. 4/00
8
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Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/
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