IRG4PC50KPBF [INFINEON]
Short Circuit Rated UltraFast IGBT; 短路额定IGBT超快
| 型号： | IRG4PC50KPBF |
| 厂家： | 
Infineon |
| 描述： | Short Circuit Rated UltraFast IGBT |
| 文件： | 总8页 (文件大小：240K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 95647
IRG4PC50KPbF
Short Circuit Rated
UltraFast IGBT
INSULATEDGATEBIPOLARTRANSISTOR
Features
C
High short circuit rating optimized for motor control,
t
sc =10µs, @360V VCE (start), TJ = 125°C,
VCES = 600V
VGE = 15V
Combines low conduction losses with high
switching speed
VCE(on) typ. = 1.84V
G
Latest generation design provides tighter parameter
distribution and higher efficiency than previous
generations
@VGE = 15V, IC = 30A
E
n-channel
Lead-Free
Benefits
As a Freewheeling Diode we recommend our
HEXFREDTM ultrafast, ultrasoft recovery diodes for
minimum EMI / Noise and switching losses in the
Diode and IGBT
Latest generation 4 IGBTs offer highest power
density motor controls possible
This part replaces the IRGPC50K and IRGPC50M
devices
TO-247AC
Absolute Maximum Ratings
Parameter
Max.
600
52
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
IC @ TC = 25°C
IC @ TC = 100°C
30
A
ICM
104
104
10
ILM
tsc
µs
V
VGE
±20
170
200
78
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
Maximum Power Dissipation
Operating
mJ
W
PD @ TC = 25°C
PD @ TC = 100°C
TJ
Junction
and-55
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbfin (1.1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
0.64
40
Units
°C/W
g (oz)
RθJC
RθCS
RθJA
Wt
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient, typical socket mount
Weight
0.24
6 (0.21)
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1
7/26/04
IRG4PC50KPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
∆V(BR)CES/∆TJ TemperatureCoeff.ofBreakdownVoltage
Collector-to-Emitter Breakdown Voltage
600
V
V
Emitter-to-Collector Breakdown Voltage 18
3.0
17
0.47
V/°C VGE = 0V, IC = 1.0mA
IC = 30A
1.84 2.2
VGE = 15V
VCE(ON)
VGE(th)
Collector-to-EmitterSaturationVoltage
Gate Threshold Voltage
2.19
1.79
IC = 52A
V
See Fig.2, 5
IC = 30A , TJ = 150°C
VCE = VGE, IC = 250µA
6.0
∆VGE(th)/∆TJ TemperatureCoeff.ofThresholdVoltage
-12
24
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance ꢀ
S
VCE = 100 V, IC = 30A
VGE = 0V, VCE = 600V
250
2.0
5000
ICES
Zero Gate Voltage Collector Current
µA
VGE = 0V, VCE = 10V, TJ = 25°C
VGE = 0V, VCE = 600V, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
±100 nA VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
IC = 30A
Qg
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
RiseTime
10
200 300
25 38
85 130
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
See Fig.8
38
34
TJ = 25°C
td(off)
tf
Turn-Off Delay Time
FallTime
160 240
79 120
IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 9,10,14
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
0.49
0.68
mJ
µs
1.12 1.4
tsc
VCC = 400V, TJ = 125°C
VGE = 15V, RG = 10Ω , VCPK < 500V
td(on)
tr
td(off)
tf
Turn-On Delay Time
RiseTime
37
35
TJ = 150°C,
IC = 30A, VCC = 480V
VGE = 15V, RG = 5.0Ω
Energy losses include "tail"
See Fig. 11,14
ns
Turn-Off Delay Time
FallTime
260
170
2.34
13
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
3200
370
95
pF
VCC = 30V
= 1.0MHz
See Fig. 7
Notes:
Repetitive rating; VGE = 20V, pulse width limited by
max. junction temperature. ( See fig. 13b )
Repetitive rating; pulse width limited by maximum
junction temperature.
Ω
VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 5.0
ꢀ
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Pulse width 5.0µs, single shot.
2
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IRG4PC50KPbF
70
60
50
40
30
20
10
0
For both:
Duty cycle: 50%
= 125°C
Triangular wave:
T
J
T
= 90°C
sink
Gate drive as specified
Power Dissipation = 40W
Clamp voltage:
80% of rated
Square wave:
60% of rated
voltage
I
Ideal diodes
A
0.1
1
10
100
f, Frequency (kHz)
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
1000
100
10
1000
100
°
T = 25 C
J
°
T = 150 C
J
°
T = 150 C
J
10
°
T = 25 C
J
V
= 15V
V
= 50V
CC
GE
20µs PULSE WIDTH
5µs PULSE WIDTH
1
1
1
10
5
6
7
8
9
10 11
12
V
, Collector-to-Emitter Voltage (V)
V
, Gate-to-Emitter Voltage (V)
GE
CE
Fig. 2 - Typical Output Characteristics
Fig. 3 - Typical Transfer Characteristics
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3
IRG4PC50KPbF
3.0
2.0
1.0
60
50
40
30
20
10
0
V
= 15V
GE
80 us PULSE WIDTH
I
= 60 A
C
I
I
= 30 A
= 15 A
C
C
-60 -40 -20
0
20 40 60 80 100 120 140 160
25
50
75
100
125
150
°
T , Junction Temperature ( C)
°
T , Case Temperature ( C)
J
C
Fig. 4 - Maximum Collector Current vs. Case
Fig. 5 - Typical Collector-to-Emitter Voltage
Temperature
vs. Junction Temperature
1
0.50
0.20
0.1
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
DM
0.01
t
1
t
2
Notes:
1. Duty factor D = t / t
1
2
2. Peak T =P
DM
x Z
+ T
C
J
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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IRG4PC50KPbF
5000
4000
3000
2000
1000
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ce
V
I
= 400V
= 30A
GE
CC
C
C
= C + C
ies
ge
gc ,
C
= C
res
gc
C
= C + C
oes
ce
gc
C
ies
4
C
oes
C
res
0
0
40
80
120
160
200
1
10
100
Q , Total Gate Charge (nC)
V
, Collector-to-Emitter Voltage (V)
G
CE
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
4.0
3.0
2.0
1.0
0.0
100
10
1
V
V
T
= 480V
R
V
V
CC
=
= 15V
= 480V
5.0Ω
CC
GE
J
G
GE
= 15V
°
= 25
C
I
= 30A
C
I
=
A
60
C
I
I
=
=
A
A
30
15
C
C
0.1
0
10
20
30
40
50
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
R
G
, Gate Resistance (
(Ω)
T , Junction Temperature ( C )
J
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Junction Temperature
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5
IRG4PC50KPbF
8.0
1000
100
10
5.0Ω
V
T
= 20V
R
T
= 5
G
J
GE
J
= 125 oC
°
= 150 C
V
= 480V
= 15V
CC
V
GE
6.0
4.0
2.0
0.0
SAFE OPERATING AREA
10
1
100
1000
10
20
30
40
50
60
V
, Collector-to-Emitter Voltage (V)
I
, Collector-to-emitter Current (A)
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-EmitterCurrent
6
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IRG4PC50KPbF
L
D.U.T.
480V
4 X IC@25°C
V *
RL
=
C
50V
0 - 480V
1000V
480µF
960V
* Driver same type as D.U.T.; Vc = 80% of Vce(max)
* Note: Due to the 50V power supply, pulse width and inductor
will increase to obtain rated Id.
Fig. 13b - Pulsed Collector
Fig. 13a - Clamped Inductive
Load Test Circuit
Current Test Circuit
I
C
L
Fig. 14a - Switching Loss
D.U.T.
Driver*
V
C
Test Circuit
50V
1000V
* Driver same type
as D.U.T., VC = 480V
90%
10%
V
C
90%
Fig. 14b - Switching Loss
t
d(off)
Waveforms
10%
5%
I
C
t
t
f
r
t
d(on)
t=5µs
E
E
off
on
E
= (E +E
)
off
ts
on
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IRG4PC50KPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S E MB L Y
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
035H
57
ASS EMBLED ON WW 35, 2000
IN THE ASSEMBLY LINE "H"
56
DAT E CODE
YEAR 0 = 2000
WE E K 35
Note: "P" in assembly line
position indicates "Lead-Free"
ASSEMBLY
LOT CODE
LINE H
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/04
8
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