IRG7PH30K10PBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR; 绝缘栅双极晶体管
| 型号： | IRG7PH30K10PBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总9页 (文件大小：322K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96156A
IRG7PH30K10PbF
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
C
VCES = 1200V
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 µS short Circuit SOA
• SquareRBSOA
IC = 23A, TC = 100°C
tSC ≥ 10µs, TJ(max) =175°C
G
• 100% of the parts tested for ILM
E
• Positive VCE (ON) Temperature Co-Efficient
• TightParameterDistribution
• LeadFreePackage
VCE(on) typ. = 2.05V
n-channel
C
E
C
Benefits
G
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
TO-247AC
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
33
V
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Nominal Current
IC @ TC = 100°C
23
A
INOMINAL
9.0
ICM
Pulse Collector Current Vge = 15V
Clamped Inductive Load Current Vge = 20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
27
ILM
36
V
VGE
±30
PD @ TC = 25°C
210
W
PD @ TC = 100°C
110
TJ
-55 to +175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.70
–––
Units
Rθ (IGBT)
JC
Thermal Resistance Junction-to-Case-(each IGBT)
°C/W
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
CS
Rθ
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
JA
1
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06/23/09
IRG7PH30K10PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
CT6
Parameter
Collector-to-Emitter Breakdown Voltage
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
V(BR)CES
1200
—
1.27
2.05
2.56
2.65
—
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-175°C)
IC = 9.0A, VGE = 15V, TJ = 25°C
IC = 9.0A, VGE = 15V, TJ = 150°C
IC = 9.0A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 400µA
CT6
Temperature Coeff. of Breakdown Voltage
—
—
V/°C
5,6,7
8,9,10
—
2.35
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
—
V
—
—
Gate Threshold Voltage
5.0
—
7.5
—
V
mV/°C
S
8,9
∆
∆
VGE(th)/ TJ
V
CE = VGE, IC = 400µA (25°C - 175°C)
10,11
Threshold Voltage temp. coefficient
Forward Transconductance
-16
6.2
VCE = 50V, IC = 9.0A, PW = 80µs
VGE = 0V, VCE = 1200V
gfe
—
—
ICES
Collector-to-Emitter Leakage Current
—
1.0
25
µA
nA
VGE = 0V, VCE = 1200V, TJ = 175°C
—
400
—
—
IGES
VGE = ±30V
Gate-to-Emitter Leakage Current
—
±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Ref.Fig
18
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 9.0A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
45
8.7
20
68
13
30
760
600
1360
31
41
130
56
—
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
CT1
nC
µJ
ns
V
CC = 600V
IC = 9.0A, VCC = 600V, VGE = 15V
G = 22Ω, L = 1000µH, LS = 150nH,TJ = 25°C
CT4
CT4
530
380
910
14
R
Energy losses include tail & diode reverse recovery
IC = 9.0A, VCC = 600V, VGE = 15V
Ω
RG = 22 , L = 1000µH, LS = 150nH,TJ = 25°C
24
td(off)
tf
Turn-Off delay time
Fall time
110
38
Eon
Eoff
Etotal
td(on)
tr
IC = 9.0A, VCC = 600V, VGE=15V
12,14
CT4
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
850
750
1600
12
Ω
RG=22 , L=1000µH, LS=150nH, TJ = 175°C
—
µJ
ns
pF
Energy losses include tail & diode reverse recovery
IC = 9.0A, VCC = 600V, VGE=15V
WF1, WF2
13,15
CT4
—
—
R
G = 22Ω, L = 1000µH, LS = 150nH
23
—
td(off)
tf
TJ = 175°C
WF1
Turn-Off delay time
Fall time
130
270
1070
63
—
WF2
—
Cies
Coes
Cres
VGE = 0V
17
Input Capacitance
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
26
—
f = 1.0Mhz
TJ = 175°C, IC = 36A
VCC = 960V, Vp =1200V
Rg = 10Ω, VGE = +20V to 0V, TJ =175°C
VCC = 600V, Vp =1200V ,TJ = 150°C,
Rg = 22Ω, VGE = +15V to 0V
4
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
10
CT2
16, CT3
WF4
—
—
µs
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 51Ω.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
R is measured at TJ of approximately 90°C.
θ
2
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IRG7PH30K10PbF
35
30
25
20
15
10
5
225
200
175
150
125
100
75
50
25
0
0
25
50
75
100
(°C)
125
150
175
0
25
50
75
T
100 125 150 175
(°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
CaseTemperature
Temperature
100
100
10µsec
10
100µsec
1msec
10
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
0
0
0
2
4
6
8
10 12 14 16 18
(V)
0
2
4
6
8
10 12 14 16 18
(V)
V
V
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
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3
IRG7PH30K10PbF
40
18
16
14
12
10
8
V
= 18V
GE
35
30
25
20
15
10
5
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
I
I
I
= 4.5A
= 9.0A
= 18A
CE
CE
CE
6
4
2
0
0
0
2
4
6
8
10 12 14 16 18
(V)
5
10
15
20
V
(V)
GE
V
CE
Fig. 8 - Typical VCE vs. VGE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C
TJ = 175°C; tp = 80µs
14
12
10
8
18
16
14
12
I
I
I
= 4.5A
= 9.0A
= 18A
I
I
I
= 4.5A
= 9.0A
= 18A
CE
CE
CE
CE
CE
CE
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 9 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
2000
1600
1200
800
400
0
40
35
30
25
20
15
10
5
E
ON
T = 25°C
E
J
OFF
T
= 175°C
J
0
5
10
15
20
0
5
10
15
I
(A)
V
(V)
C
GE
Fig. 12 - Typ. Energy Loss vs. IC
Fig. 11- Typ. Transfer Characteristics
TJ = 175°C; L = 1000µH; VCE = 600V, RG = 22Ω; VGE = 15V
VCE = 50V; tp = 10µs
4
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IRG7PH30K10PbF
1000
100
10
1000
900
800
700
600
E
ON
t
F
td
OFF
t
R
E
OFF
td
ON
0
10
20
30
(Ω)
40
50
0
5
10
(A)
15
20
R
G
I
C
Fig. 13 - Typ. Switching Time vs. IC
TJ = 175°C; L = 1000µH; VCE = 600V, RG = 22Ω; VGE = 15V
Fig. 14 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1000µH; VCE = 600V, ICE = 9.0A; VGE = 15V
60
50
40
30
20
10
48
40
32
24
16
8
1000
t
F
T
sc
100
td
OFF
I
sc
t
R
10
td
ON
1
8
10
12
(V)
14
16
0
10
20
30
(Ω)
40
50
V
R
GE
G
Fig. 15 - Typ. Switching Time vs. RG
TJ = 175°C; L = 1000µH; VCE = 600V, ICE = 9.0A; VGE = 15V
Fig. 16 - VGE vs. Short Circuit Time
VCC = 600V; TC = 150°C
16
14
12
10
8
10000
V
V
= 600V
= 400V
CES
CES
Cies
1000
100
6
Coes
4
10
1
Cres
2
0
0
10
Q
20
30
40
50
0
100
200
V
300
400
500
, Total Gate Charge (nC)
(V)
G
CE
Fig. 18- Typical Gate Charge vs. VGE
Fig. 17 - Typ. Capacitance vs. VCE
ICE = 9.0A; L = 1.0mH
VGE= 0V; f = 1MHz
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5
IRG7PH30K10PbF
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τ
0.01068 0.000005
τ
J τJ
τ
Cτ
0.02
0.18156 0.000099
0.31802 0.001305
0.19105 0.009113
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case
6
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IRG7PH30K10PbF
L
L
80 V
+
-
DUT
VCC
DUT
Vclamped
Rg
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
L
DIODE CLAMP
VCC
DUT /
VCC
DRIVER
Rg
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
R = VCC
ICM
C fo rce
100K
D1
22K
C sen se
DUT
VCC
0.0075µ
G force
Rg
DUT
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
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7
IRG7PH30K10PbF
700
600
500
400
300
200
100
0
35
30
25
20
15
10
5
900
18
16
14
12
10
8
800
tf
700
600
500
tr
90% test
current
TEST CURRENT
90% ICE
400
300
200
100
0
6
10% test
current
5% ICE
5% VCE
4
5% VCE
2
0
0
Eon Los s
Eoff Loss
-100
-2
-100
-5
-5
0
5
10
-1.8 -0.8 0.2
1.2
2.2
3.2
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
VCE
ICE
-100
-5
-10
0
5
10
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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IRG7PH30K10PbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 06/2009
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9
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