IRG7PH35UD1-EP [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS; 超低VF二极管感应加热和软开关应用绝缘栅双极晶体管
| 型号： | IRG7PH35UD1-EP |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS |
| 文件： | 总9页 (文件大小：402K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97455
IRG7PH35UD1PbF
IRG7PH35UD1-EP
INSULATEDGATEBIPOLARTRANSISTORWITHULTRA-LOWVFDIODE
FORINDUCTIONHEATINGANDSOFTSWITCHINGAPPLICATIONS
Features
C
• Low VCE (ON) trench IGBT Technology
• Low Switching Losses
• SquareRBSOA
• Ultra-LowVF Diode
• 1300Vpk Repetitive Transient Capacity
VCES = 1200V
I NOMINAL = 20A
G
• 100% of the Parts Tested for ILM
TJ(max) = 150°C
VCE(on) typ. = 1.9V
• Positive VCE (ON) Temperature Co-Efficient
• TightParameterDistribution
• LeadFreePackage
E
n-channel
Benefits
C
C
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
andUltra-lowVF
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
• Low EMI
E
E
C
C
G
G
TO-247AC
TO-247AD
IRG7PH35UD1PbF
IRG7PH35UD1-EP
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
1200
V
VCES
50
IC @ TC = 25°C
25
IC @ TC = 100°C
20
INOMINAL
ICM
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
60
A
ILM
80
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
50
25
IF @ TC = 25°C
IF @ TC = 100°C
80
IFM
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±30
V
VGE
179
W
PD @ TC = 25°C
71
PD @ TC = 100°C
-55 to +150
TJ
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
TSTG
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.35
–––
Units
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
JC
Rθ (Diode)
JC
°C/W
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
CS
Rθ
JA
–––
1
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02/09/2010
IRG7PH35UD1PbF/IRG7PH35UD1-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1200
—
Typ. Max. Units
Conditions
VGE = 0V, IC = 100µA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Repetitive Transient Collector-to-Emitter Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
—
1300
—
V
V(BR)Transient
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, TJ = 75°C, PW 10µs
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 600µA
—
V
—
1.2
1.9
2.3
—
V/°C
V
—
2.2
—
—
VGE(th)
gfe
Gate Threshold Voltage
3.0
—
6.0
—
V
S
VCE = 50V, IC = 20A, PW = 30µs
VGE = 0V, VCE = 1200V
Forward Transconductance
Collector-to-Emitter Leakage Current
22
ICES
—
1.0
120
1.15
1.08
—
100
—
µA
V
GE = 0V, VCE = 1200V, TJ = 150°C
—
VFM
IGES
IF = 20A
Diode Forward Voltage Drop
—
1.26
—
V
IF = 20A, TJ = 150°C
VGE = ±30V
—
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Min.
—
Typ. Max. Units
Conditions
Qg
IC = 20A
85
15
35
130
Qge
Qgc
VGE = 15V
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
—
20
nC
VCC = 600V
—
50
IC = 20A, VCC = 600V, VGE = 15V
Ω
Eoff
RG = 10 , L = 200µH,LS = 150nH, TJ = 25°C
Turn-Off Switching Loss
—
620
850
µJ
ns
Energy losses include tail
td(off)
tf
IC = 20A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200µH,LS = 150nH, TJ = 25°C
IC = 20A, VCC = 600V, VGE=15V
Turn-Off delay time
Fall time
—
—
160
80
180
105
Eoff
RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C
Turn-Off Switching Loss
—
1120
—
µJ
ns
pF
Energy losses include tail
IC = 20A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C
VGE = 0V
td(off)
tf
Turn-Off delay time
Fall time
—
—
—
—
—
190
210
1940
120
40
—
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 80A
V
CC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Rg = 10Ω, VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rating for Hard Switching conditions. Rating is higher in Soft Switching conditions.
ꢀ Rθ is measured at TJ approximately 90°C.
2
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IRG7PH35UD1PbF/IRG7PH35UD1-EP
50
40
30
20
10
0
200
175
150
125
100
75
50
25
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1.0
1000
I
= 600µA
C
0.9
0.8
0.7
0.6
0.5
100
10
1
25
50
75
100
125
150
10
100
1000
10000
T
, Temperature (°C)
V
(V)
J
CE
Fig. 3 - Typical Gate Threshold Voltage
Fig. 4 - Reverse Bias SOA
(Normalized)vs.JunctionTemperature
TJ = 150°C; VGE = 20V
80
70
60
50
40
30
20
10
0
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
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3
IRG7PH35UD1PbF/IRG7PH35UD1-EP
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
25°C
150°C
0
2
4
6
8
10
0.0
0.5
1.0
(V)
1.5
2.0
V
F
V
(V)
CE
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 7 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 30µs
8
7
6
5
8
7
6
5
I
I
I
= 10A
= 20A
= 40A
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
CE
CE
CE
4
3
2
1
4
3
2
1
4
8
12
16
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
80
70
60
50
40
30
20
10
0
8
7
6
5
4
3
2
1
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
T = 150°C
J
T
= 25°C
J
4
5
6
7
8
9
10
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 50V; tp = 30µs
4
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IRG7PH35UD1PbF/IRG7PH35UD1-EP
2200
2000
1800
1600
1400
1200
1000
800
1000
t
F
E
OFF
td
OFF
100
600
400
200
10
0
10
20
30
40
50
0
10
20
(A)
30
40
I
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
2800
10000
2600
2400
2200
td
OFF
1000
E
2000
1800
1600
1400
1200
1000
OFF
t
F
100
10
0
25
50
75
100
125
0
20
40
60
(Ω)
80
100
120
R
G
Rg (Ω)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
16
10000
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
1000
6
100
10
Coes
Cres
4
2
0
0
100
200
300
(V)
400
500
600
0
20
Q
40
60
80
100
, Total Gate Charge (nC)
V
CE
G
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 20A; L = 2.4mH
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5
IRG7PH35UD1PbF/IRG7PH35UD1-EP
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.017
0.218
0.299
0.177
0.000013
0.000141
0.002184
0.013107
τ
τ
J τJ
τ
Cτ
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.05
0.00756 0.000005
τ
τ
J τJ
τ
Cτ
0.56517 0.000677
0.54552 0.003514
0.25085 0.019551
0.02
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRG7PH35UD1PbF/IRG7PH35UD1-EP
L
L
80 V
+
-
DUT
VCC
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
C force
diode clamp /
DUT
100K
L
D1 22K
C sense
-5V
DUT
DUT /
DRIVER
G force
0.0075µF
VCC
Rg
E sense
E force
Fig.C.T.4 - BVCES Filter Circuit
Fig.C.T.3 - Switching Loss Circuit
800
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
tf
90% ICE
5% VCE
5% ICE
0
Eoff Loss
1
-100
-0.5
-5
2
0
0.5
1.5
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
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7
IRG7PH35UD1PbF/IRG7PH35UD1-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
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IRG7PH35UD1PbF/IRG7PH35UD1-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 02/2010
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9
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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
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