IRG7PH35UPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR;
| 型号： | IRG7PH35UPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR |
| 文件： | 总10页 (文件大小：379K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97479
IRG7PH35UPbF
IRG7PH35U-EP
INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Maximum junction temperature 175 °C
• Square RBSOA
C
VCES = 1200V
I NOMINAL = 20A
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead -Free
G
TJ(max) = 175°C
VCE(on) typ. = 1.9V
E
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
C
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
E
E
C
C
G
G
Applications
• U.P.S
TO-247AC
IRG7PH35UPbF
TO-247AD
IRG7PH35U-EP
• Welding
• Solar inverter
• Induction heating
G
Gate
C
E
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
1200
55
Units
V
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
IC @ TC = 25°C
IC @ TC = 100°C
35
A
INOMINAL
20
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
ICM
60
ILM
80
VGE
±30
210
105
V
PD @ TC = 25°C
W
PD @ TC = 100°C
TJ
-55 to +175
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case-(each IGBT)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.70
–––
Units
Rθ (IGBT)
JC
°C/W
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
CS
Rθ
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
JA
1
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3/26/10
IRG7PH35UPbF/IRG7PH35U-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1200
—
Typ. Max. Units
Conditions
VGE = 0V, IC = 250μA
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
—
1.2
1.9
2.3
2.4
—
—
V
ΔV(BR)CES/ΔTJ
VCE(on)
—
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
—
2.2
—
V
IC = 20A, VGE = 15V, TJ = 25°C
IC = 20A, VGE = 15V, TJ = 150°C
IC = 20A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 600μA
—
—
—
VGE(th)
ΔVGE(th)/ΔTJ
gfe
Gate Threshold Voltage
3.0
—
6.0
—
V
Threshold Voltage temp. coefficient
Forward Transconductance
-16
22
mV/°C VCE = VGE, IC = 600μA (25°C - 150°C)
—
—
S
V
CE = 50V, IC = 20A, PW = 30μs
VGE = 0V, VCE = 1200V
GE = 0V, VCE = 1200V, TJ = 175°C
ICES
Collector-to-Emitter Leakage Current
—
2.0
2000
—
100
—
μA
—
V
IGES
Gate-to-Emitter Leakage Current
—
±100
nA
VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
Qg
85
130
IC = 20A
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
15
20
nC
μJ
ns
VGE = 15V
VCC = 600V
35
50
1060
620
1680
30
1300
850
2150
50
IC = 20A, VCC = 600V, VGE = 15V
Ω
RG = 10 , L = 200uH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH35UDPbF
15
30
td(off)
tf
Turn-Off delay time
Fall time
160
80
180
105
—
Eon
Eoff
Etotal
td(on)
tr
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1880
1140
3020
25
IC = 20A, VCC = 600V, VGE=15V
—
μJ
ns
pF
RG=10Ω, L=200uH, LS=150nH, TJ = 175°C
Energy losses include tail & diode reverse recovery
Diode clamp the same as IRG7PH35UDPbF
—
—
20
—
td(off)
tf
Turn-Off delay time
Fall time
200
200
1940
60
—
—
Cies
Coes
Cres
Input Capacitance
—
VGE = 0V
Output Capacitance
Reverse Transfer Capacitance
—
VCC = 30V
40
—
f = 1.0Mhz
TJ = 175°C, IC = 80A
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
VCC = 960V, Vp =1200V
Ω
Rg = 10 , VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRG7PH35UPbF/IRG7PH35U-EP
45
40
35
30
25
20
15
10
5
For both:
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Gate drive as specified
Power Dissipation = 70W
Square Wave:
VCC
I
Diode as specified
0
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
250
60
50
40
30
20
10
0
200
150
100
50
0
25
50
75
100
125
150
175
0
25
50
75
T
100 125 150 175
T
(°C)
C
(°C)
C
Fig. 2 - Maximum DC Collector Current vs.
Fig. 3- Power Dissipation vs. Case
Case Temperature
Temperature
100
1000
10 μs
10
100
10
1
100 μs
1
1ms
DC
0.1
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
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3
IRG7PH35UPbF/IRG7PH35U-EP
80
70
60
50
40
30
20
10
0
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
70
60
50
40
30
20
10
0
GE
GE
GE
GE
GE
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6- Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30μs
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 30μs
8
7
6
5
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
70
60
50
40
30
20
10
0
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
4
3
2
1
4
8
12
16
20
0
2
4
6
8
10
V
(V)
GE
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 30μs
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
8
8
7
6
5
7
6
5
4
3
2
1
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
4
3
2
1
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = 25°C
TJ = 175°C
4
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IRG7PH35UPbF/IRG7PH35U-EP
4000
80
70
60
50
40
30
20
10
0
3000
E
ON
2000
T
= 175°C
J
E
OFF
1000
0
T
= 25°C
J
4
5
6
7
8
9
10
0
10
20
(A)
30
40
V
Gate-to-Emitter Voltage(V)
GE,
I
C
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V, tp = 30μs
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 680μH; VCE = 600V, RG = 10Ω; VGE = 15V
1000
3500
td
OFF
3000
E
ON
t
F
2500
2000
100
10
1
td
ON
E
1500
1000
500
OFF
t
R
0
20
40
60
80
100
0
10
20
(A)
30
40
Ω
( )
R
G
I
C
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 680μH; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 680μH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
10000
Cies
td
OFF
1000
1000
t
F
100
100
Coes
td
ON
t
Cres
10
R
10
0
100
200
300
(V)
400
500
600
0
20
40
60
(Ω)
80
100
V
R
CE
G
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 680μH; VCE = 600V, ICE = 20A; VGE = 15V
Fig. 17 - Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
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5
IRG7PH35UPbF/IRG7PH35U-EP
1.0
0.8
0.6
0.4
16
I
= 600μA
C
14
12
10
8
V
V
= 600V
= 400V
CES
CES
6
4
2
0
25
50
75
100
125
150
175
0
20
Q
40
60
80
100
T
, Temperature (°C)
, Total Gate Charge (nC)
J
G
Fig. 19 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 20A; L = 2.4mH
1
D = 0.50
0.20
0.1
0.10
0.05
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.017
0.218
0.299
0.177
0.000013
0.000141
0.002184
0.013107
τ
τ
J τJ
τ
Cτ
0.01
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 20. Maximum Transient Thermal Impedance, Junction-to-Case
6
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IRG7PH35UPbF/IRG7PH35U-EP
L
L
80 V
+
-
DUT
VCC
DUT
Vclamped
Rg
0
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
R = VCC
ICM
L
DIODE CLAMP
DUT
VCC
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - Resistive Load Circuit
C fo rce
100K
D1
22K
C sen se
E sense
0.0075μ
G force
DUT
E force
Fig.C.T.5 - BVCES Filter Circuit
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7
IRG7PH35UPbF/IRG7PH35U-EP
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
tr
tf
TEST CURRENT
90% test current
5% VCE
90% ICE
5% VCE
10% test current
5% ICE
0
Eoff Loss
Eon Loss
-100
-5
-100
-10
-0.5 -0.3 -0.1 0.1 0.3 0.5
-0.5
0.5
time(μs)
1.5
time (μs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
8
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IRG7PH35UPbF/IRG7PH35U-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S EMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
RECTIFIER
AS S EMB LE D ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
135H
LOGO
56
57
DATE CODE
YEAR 1 = 2001
WEE K 35
AS S E MB L Y
LOT CODE
Note: "P" in assembly lineposition
indicates "L ead-F ree"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
IRG7PH35UPbF/IRG7PH35U-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
EXAMPLE: THIS IS AN IRGP30B120KD-E
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
RECTIFIER
LOGO
ASSEMBLED ON WW35, 2000
IN THE ASSEMBLY LINE "H"
035H
57
56
DATE CODE
YEAR 0 = 2000
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "L ead-F ree"
WEEK 35
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2010
10
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