IRG7PH35UD1MPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE;
| 型号： | IRG7PH35UD1MPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE |
| 文件： | 总9页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PH35UD1MPbF
INSULATEDGATEBIPOLARTRANSISTORWITHULTRA-LOWVFDIODE
FORINDUCTIONHEATINGANDSOFTSWITCHINGAPPLICATIONS
Features
C
• Low VCE (ON) trench IGBT Technology
• Low Switching Losses
• SquareRBSOA
VCES = 1200V
IC = 25A, TC = 100°C
TJ(max) = 150°C
• Ultra-LowVF Diode
• 1300Vpk Repetitive Transient Capacity
• 100% of the Parts Tested for ILM
G
• Positive VCE (ON) Temperature Co-Efficient
• TightParameterDistribution
• LeadFreePackage
E
VCE(on) typ. = 1.9V @ IC = 20A
n-channel
Benefits
C
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
andUltra-lowVF
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
• Low EMI
E
C
G
TO-247AD
G
C
E
Gate
Collector
Emitter
Standard Pack
Base part number
Package Type
Orderable part number
Form
Quantity
IRG7PH35UD1MPbF
TO-247AD
Tube
25
IRG7PH35UD1MPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
V
V(BR)Transient
Repetitive Transient Collector-to-Emitter Voltage
Continuous Collector Current
1300
IC @ TC = 25°C
50
IC @ TC = 100°C
Continuous Collector Current
25
ICM
Pulse Collector Current, VGE=15V
150
A
ILM
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
80
IF @ TC = 25°C
50
IF @ TC = 100°C
25
80
IFM
VGE
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
±30
V
PD @ TC = 25°C
179
W
PD @ TC = 100°C
71
TJ
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.70
1.35
–––
Units
Rθ
Rθ
Rθ
Rθ
(IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
JC
JC
CS
JA
(Diode)
Thermal Resistance Junction-to-Case-(each Diode)
°C/W
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
www.irf.com © 2013 International Rectifier
April 24, 2013
1
IRG7PH35UD1MPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
1200
—
Typ. Max. Units
Conditions
V(BR)CES
—
1.2
1.9
2.3
—
—
—
V
VGE = 0V, IC = 100µA
Col l ector - to- E mi tter B r eakdown Vol tage
T emper atur e Coef f . of B r eak down Vol tage
Collector-to-Emitter Saturation Voltage
∆
∆
V(BR)CES / T J
V/°C VGE = 0V, IC = 1mA (25°C-150°C)
VCE(on)
—
2.2
—
V
IC = 20A, VGE = 15V, TJ = 25°C
C = 20A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 600µA
VCE = 50V, IC = 20A, PW = 30µs
—
I
VGE(th)
gfe
Gate Threshold Voltage
3.0
—
6.0
—
V
S
Forward Transconductance
Collector-to-Emitter Leakage Current
22
ICES
—
1.0
120
1.15
1.08
—
100
—
µA VGE = 0V, VCE = 1200V
—
V
GE = 0V, VCE = 1200V, TJ = 150°C
VFM
Diode Forward Voltage Drop
—
1.26
—
V
IF = 20A
—
IF = 20A, TJ = 150°C
IGES
Gate-to-Emitter Leakage Current
—
±100
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
—
Typ. Max. Units
Conditions
Qg
Total Gate Charge (turn-on)
85
15
35
130
20
IC = 20A
nC VGE = 15V
VCC = 600V
Qge
Qgc
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
—
—
50
I
C = 20A, VCC = 600V, VGE = 15V
Eoff
Turn-Off Switching Loss
—
620
850
µJ
ns
RG = 10Ω, L = 200µH,LS = 150nH, TJ = 25°C
Energy losses include tail
td(off)
tf
Turn-Off delay time
Fall time
—
—
160
80
180
105
IC = 20A, VCC = 600V, VGE = 15V
Ω
RG = 10 , L = 200µH,LS = 150nH, TJ = 25°C
I
C = 20A, VCC = 600V, VGE=15V
Eoff
Turn-Off Switching Loss
—
1120
—
µJ
ns
RG = 10Ω, L = 200µH,LS = 150nH, TJ = 150°C
Energy losses include tail
td(off)
tf
Turn-Off delay time
Fall time
—
—
—
—
—
190
210
1940
120
40
—
—
—
—
—
IC = 20A, VCC = 600V, VGE = 15V
Ω
RG = 10 , L = 200µH,LS = 150nH, TJ = 150°C
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
pF VGE = 0V
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 80A
CC = 960V, Vp =1200V
Rg = 10Ω, VGE = +20V to 0V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
V
Notes:
VCC = 80% (VCES), VGE = 20V, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ approximately 90°C.
ꢀ FBSOA operating conditions only.
VGE = 0V, TJ = 75°C, PW ≤ 10µs.
www.irf.com © 2012 International Rectifier
April 24, 2013
2
IRG7PH35UD1MPbF
50
40
30
20
10
0
200
175
150
125
100
75
50
25
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1.0
1000
I
= 600µA
C
0.9
0.8
0.7
0.6
0.5
100
10
1
25
50
75
100
125
150
10
100
1000
10000
T
, Temperature (°C)
V
(V)
J
CE
Fig. 3 - Typical Gate Threshold Voltage
Fig. 4 - Reverse Bias SOA
(Normalized)vs.JunctionTemperature
TJ = 150°C; VGE = 20V
80
70
60
50
40
30
20
10
0
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
3
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April 24, 2013
IRG7PH35UD1MPbF
80
70
60
50
40
30
20
10
0
80
70
60
50
40
30
20
10
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
25°C
150°C
0
2
4
6
8
10
0.0
0.5
1.0
(V)
1.5
2.0
V
F
V
(V)
CE
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 7 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 30µs
8
7
6
5
8
7
6
5
I
I
I
= 10A
= 20A
= 40A
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
CE
CE
CE
4
3
2
1
4
3
2
1
4
8
12
16
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
80
70
60
50
40
30
20
10
0
8
7
6
5
4
3
2
1
I
I
I
= 10A
= 20A
= 40A
CE
CE
CE
T = 150°C
J
T
= 25°C
J
4
5
6
7
8
9
10
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
TJ = 150°C
VCE = 50V; tp = 30µs
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April 24, 2013
4
IRG7PH35UD1MPbF
2200
2000
1800
1600
1400
1200
1000
800
1000
100
10
t
F
E
OFF
td
OFF
600
400
200
0
10
20
30
40
50
0
10
20
(A)
30
40
I
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
TJ = 150°C; L = 680µH; VCE = 600V, RG = 10Ω; VGE = 15V
2800
10000
2600
2400
2200
td
OFF
1000
E
2000
1800
1600
1400
1200
1000
OFF
t
F
100
10
0
25
50
75
100
125
0
20
40
60
(Ω)
80
100
120
R
G
Rg (Ω)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
TJ = 150°C; L = 680µH; VCE = 600V, ICE = 20A; VGE = 15V
16
10000
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
1000
6
100
10
Coes
Cres
4
2
0
0
100
200
300
(V)
400
500
600
0
20
Q
40
60
80
100
, Total Gate Charge (nC)
V
CE
G
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
VGE= 0V; f = 1MHz
ICE = 20A; L = 2.4mH
5
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April 24, 2013
IRG7PH35UD1MPbF
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.017
0.218
0.299
0.177
0.000013
0.000141
0.002184
0.013107
τ
τ
J τJ
τ
Cτ
0.01
0.001
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
Notes:
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.1
0.05
0.00756 0.000005
τ
τ
J τJ
τ
Cτ
0.56517 0.000677
0.54552 0.003514
0.25085 0.019551
0.02
0.01
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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April 24, 2013
6
IRG7PH35UD1MPbF
L
L
80 V
+
-
DUT
VCC
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
C force
diode clamp /
DUT
100K
L
D1 22K
C sense
-5V
DUT
DUT /
DRIVER
G force
0.0075µF
VCC
Rg
E sense
E force
Fig.C.T.4 - BVCES Filter Circuit
Fig.C.T.3 - Switching Loss Circuit
800
700
600
500
400
300
200
100
0
40
35
30
25
20
15
10
5
tf
90% ICE
5% VCE
5% ICE
0
Eoff Loss
1
-100
-0.5
-5
2
0
0.5
1.5
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
7
www.irf.com © 2012 International Rectifier
April 24, 2013
IRG7PH35UD1MPbF
TO-247AD Package Outline
(Dimensions are shown in millimeters (inches))
E
A
A
"A"
E2/2
A2
Q
E2
2X
D
B
L1
"A"
L
SEE
VIE W "B"
2x b2
3x
b
Ø
.010
B A
c
b4
A1
e
2x
LEAD TIP
Ø
A
P
Ø .010
B
-A-
S
D1
VI E W: "B "
THERMAL PAD
PLATING
BASE METAL
E1
(c)
Ø .010
B A
VIEW: "A" - "A"
(b, b2, b4)
S E CT ION: C-C, D-D, E -E
TO-247AD Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DAT E CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P"in assembly line position
indicates "L ead-F ree"
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com © 2012 International Rectifier
April 24, 2013
8
IRG7PH35UD1MPbF
Qualification information†
Indus trial††
Qualification level
(per JEDEC JE S D47F ††† guidelines )
N/A
Moisture Sensitivity Level
RoHS compliant
TO-247AD
(per JE DE C J-S TD-020D†††
Yes
)
Qualification standards can be found at International Rectifier’s web site
http://www.irf.com/product-info/reliability
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
http://www.irf.com/whoto-call/salesrep/
Applicable version of JEDEC standard at the time of product release.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
9
www.irf.com © 2012 International Rectifier
April 24, 2013
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