IRG7PH42UD-EP [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG7PH42UD-EP |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：436K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97391B
IRG7PH42UDPbF
IRG7PH42UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) trench IGBT technology
• Low switching losses
• SquareRBSOA
VCES = 1200V
IC = 45A, TC = 100°C
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tightparameterdistribution
• Lead-Free
G
TJ(max) = 150°C
E
VCE(on) typ. = 1.7V
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
C
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
E
E
C
Applications
• U.P.S.
• Welding
• SolarInverter
• InductionHeating
C
G
G
TO-247AC
IRG7PH42UDPbF
TO-247AD
IRG7PH42UD-EP
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
1200
85
Units
Collector-to-Emitter Voltage
V
VCES
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
IC @ TC = 25°C
45
IC @ TC = 100°C
30
INOMINAL
ICM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
90
A
ILM
120
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
85
45
IF @ TC = 25°C
IF @ TC = 100°C
120
±30
320
130
IFM
V
VGE
W
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Operating Junction and
-55 to +150
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.39
0.56
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Rθ (IGBT)
JC
Thermal Resistance Junction-to-Case-(each Diode)
Rθ (Diode)
JC
°C/W
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
CS
Rθ
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
JA
1
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10/26/09
IRG7PH42UDPbF/IRG7PH42UD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200
—
0.18
1.7
2.1
—
—
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 2.0mA (25°C-150°C)
IC = 30A, VGE = 15V, TJ = 25°C
IC = 30A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.0mA
—
—
V/°C
—
2.0
—
—
V
V
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
∆VGE(th)/∆TJ
VCE = VGE, IC = 1.0mA (25°C - 150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
-14
32
mV/°C
S
V
CE = 50V, IC = 30A, PW = 80µs
VGE = 0V, VCE = 1200V
GE = 0V, VCE = 1200V, TJ = 150°C
gfe
—
—
ICES
Collector-to-Emitter Leakage Current
—
4.4
1200
2.0
2.2
—
150
—
µA
V
—
VFM
IGES
IF = 30A
Diode Forward Voltage Drop
—
2.4
—
V
IF = 30A, TJ = 150°C
VGE = ±30V
—
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
Qg
IC = 30A
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
157
236
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
VCC = 600V
21
32
nC
µJ
ns
69
104
IC = 30A, VCC = 600V, VGE = 15V
2105 2374
1182 1424
3287 3798
Ω
RG = 10 , L = 200µH,TJ = 25°C
Energy losses include tail & diode reverse recovery
25
32
34
41
271
86
—
—
—
—
—
—
—
—
—
—
td(off)
tf
Turn-Off delay time
Fall time
229
63
Eon
Eoff
Etotal
td(on)
tr
IC = 30A, VCC = 600V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
2978
1968
4946
19
Ω
RG=10 , L=200µH, TJ = 150°C
µJ
ns
pF
Energy losses include tail & diode reverse recovery
32
td(off)
tf
Turn-Off delay time
Fall time
290
154
3338
124
75
Cies
Coes
Cres
VGE = 0V
Input Capacitance
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0Mhz
TJ = 150°C, IC = 120A
VCC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
1475
153
34
—
—
—
µJ
ns
A
VCC = 600V, IF = 30A
Ω
Rg = 10 , L =1.0mH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
ꢀ Calculated continuous current based on maximum allowable junction temperature.
Bond wire current limit is 78A. Note that current limitations arising from heating of
the device leads may occur with some lead mounting arrangements.
2
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IRG7PH42UDPbF/IRG7PH42UD-EP
60
50
40
30
20
10
0
For both:
Duty cycle : 50%
Tj = 150°C
Tsink = 90°C
Gate drive as specified
Power Dissipation = 95W
Square wave:
60% of rated
voltage
I
Ideal diodes
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
80
60
40
20
0
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
0
20 40 60 80 100 120 140 160
T
(°C)
C
T
(°C)
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
CaseTemperature
Temperature
1000
1000
100
100
10
1
10µsec
10
100µsec
1msec
DC
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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3
IRG7PH42UDPbF/IRG7PH42UD-EP
120
120
100
80
60
40
20
0
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
80
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
TJ = 25°C; tp = 80µs
120
120
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
100
100
80
60
40
20
0
-40°C
25°C
150°C
80
60
40
20
0
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
0
2
4
6
8
10
V
V
(V)
F
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 80µs
tp = 80µs
12
10
8
12
10
8
I
I
I
= 15A
= 30A
= 60A
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
CE
CE
CE
6
4
2
0
6
4
2
0
4
8
12
16
20
4
8
12
16
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
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IRG7PH42UDPbF/IRG7PH42UD-EP
12
10
8
120
100
80
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
T
= 25°C
J
= 150°C
60
40
20
0
6
T
J
4
2
0
4
6
8
10
12
4
8
12
16
20
V
, Gate-to-Emitter Voltage (V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V
TJ = 150°C
7000
6000
5000
4000
3000
2000
1000
0
1000
t
F
td
OFF
E
100
ON
t
E
R
OFF
td
ON
10
0
10
20
30
(A)
40
50
60
0
10
20
30
(A)
40
50
60
I
I
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
6000
10000
5000
1000
E
td
ON
OFF
4000
E
OFF
t
F
3000
2000
1000
100
t
R
td
ON
10
0
20
40
60
(Ω)
80
100
0
20
40
60
(Ω)
80
100
R
R
G
G
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 30A; VGE = 15V
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5
IRG7PH42UDPbF/IRG7PH42UD-EP
50
40
35
30
25
20
R
5.0Ω
G =
40
30
20
10
47Ω
R
R
10Ω
G =
G =
R
100Ω
G =
15 20 25 30 35 40 45 50 55 60
(A)
0
20
40
60
(Ω)
80
100
I
R
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
40
35
30
25
20
9000
8000
7000
6000
5000
4000
3000
2000
60A
5.0Ω
10Ω
47Ω
30A
100Ω
15A
0
200 400 600 800 1000 1200 1400
0
200
400
600
800 1000 1200
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 19 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 30A; TJ = 150°C
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
3500
= 5.0
R
R
Ω
G
= 10
Ω
3000
2500
2000
1500
1000
500
G
R
=
=
47Ω
G
R
100Ω
G
15 20 25 30 35 40 45 50 55 60
(A)
I
F
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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IRG7PH42UDPbF/IRG7PH42UD-EP
16
10000
1000
100
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
6
Coes
4
2
Cres
200
10
0
0
100
300
(V)
400
500
600
0
20 40 60 80 100 120 140 160 180
, Total Gate Charge (nC)
Q
V
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22 - Typ. Capacitance vs. VCE
ICE = 30A; L = 600µH
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.001
0.02
0.01
0.1306
0.1752
0.0814
0.0031
0.000313
0.002056
0.008349
0.043100
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.01
0.1254
0.0937
0.1889
0.1511
0.000515
0.000515
0.001225
0.018229
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1 1
t
, Rectangular Pulse Duration (sec)
1
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRG7PH42UDPbF/IRG7PH42UD-EP
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
R = VCC
ICM
L
-5V
VCC
DUT
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
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IRG7PH42UDPbF/IRG7PH42UD-EP
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
tf
tr
TEST CURRENT
90% test
current
90% ICE
5% VCE
5% ICE
10% test
current
5% VCE
Eoff Loss
Eon Loss
-100
-10
-100
-10
-0.5
0
0.5
1
1.5
2
9.4
9.6
9.8
10
10.2
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
40
30
20
10
0
EREC
tRR
10%
Peak
IRR
-10
Peak
IRR
-20
-30
-40
-0.25 0.00 0.25 0.50 0.75 1.00
time (µS)
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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9
IRG7PH42UDPbF/IRG7PH42UD-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PH42UDPbF/IRG7PH42UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/2009
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11
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