IRG7PH44K10DPBF_15 [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRG7PH44K10DPBF_15 |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总12页 (文件大小：879K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
VCES = 1200V
C
IC = 40A, TC =100°C
tSC 10µs, TJ(max) = 150°C
CE(ON) typ. = 1.9V @ IC = 25A
G
E
V
IRG7PH44K10D‐EPbF
TO‐247AD
IRG7PH44K10DPbF
n-channel
TO‐247AC
Applications
• Industrial Motor Drive
• UPS
G
C
E
Gate
Collector
Emitter
Features
Benefits
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG7PH44K10DPbF
IRG7PH44K10D-EPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
1200
70
40
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
100
ILM
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
100
20
10
±30
320
120
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
V
W
Maximum Power Dissipation
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.40
1.3
–––
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
0.80
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 2mA (25°C-150°C)
—
—
5.0
1.9
2.4
—
2.4
—
7.5
V
IC = 25A, VGE = 15V, TJ = 25°C
IC = 25A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.2mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-15
—
mV/°C VCE = VGE, IC = 1.2mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
16
1.0
1200
—
2.5
2.4
—
35
—
±100
3.3
—
S
µA
V
V
CE = 50V, IC = 25A, PW = 20µs
GE = 0V, VCE = 1200V
ICES
IGES
VF
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 1200V, TJ = 150°C
nA VGE = ±30V
V
IF = 8.0A
IF = 8.0A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
135
30
65
2.1
1.3
3.4
75
50
315
95
200
45
IC = 25A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 600V
100
3.0
2.2
5.2
95
IC = 25A, VCC = 600V, VGE=15V
RG = 10, TJ = 25°C
Energy losses include tail & diode
reverse recovery
70
ns
340
115
—
2.8
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
2.2
5.0
60
—
—
—
—
—
mJ
IC = 25A, VCC = 600V, VGE=15V
RG = 10, TJ = 150°C
Energy losses include tail & diode
reverse recovery
55
ns
td(off)
Turn-Off delay time
340
tf
Fall time
—
—
—
—
250
3050
145
80
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 100A
FULL SQUARE
VCC = 960V, Vp ≤ 1200V
RBSOA
Reverse Bias Safe Operating Area
VGE = +20V to 0V
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
190
130
13
—
—
—
µJ
ns
A
VCC = 600V, IF = 8A
VGE = 15V, Rg = 10
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
70
60
50
40
30
20
10
0
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 128.2W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
70
60
50
40
30
20
10
0
350
300
250
200
150
100
50
0
25
50
75
100
125
150
25
50
75
100
(°C)
125
150
T
(°C)
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
100
10µsec
10
100µsec
1
1msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 150°C; VGE = 15V
3
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
100
100
80
60
40
20
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
80
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
100
80
60
40
20
0
160
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
140
120
100
80
T =150°C
J
T = 25°C
J
TJ = -40°C
60
40
20
0
0
2
4
6
8
10
0.0
2.0
4.0
6.0
(V)
8.0
10.0
V
(V)
V
CE
F
Fig. 9 - Typ. Diode Forward Voltage Drop
Fig. 8 - Typ. IGBT Output Characteristics
Characteristics
TJ = 150°C; tp = 20µs
12
12
10
10
8
I
= 13A
= 25A
= 50A
CE
I
= 13A
= 25A
= 50A
CE
I
8
6
4
2
0
CE
I
CE
I
CE
I
CE
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 11 - Typical VCE vs. VGE
TJ = -40°C
TJ = 25°C
4
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
12
10
8
100
I
= 13A
= 25A
= 50A
75
50
CE
I
CE
I
CE
6
4
T = 25°C
J
25
0
T = 150°C
J
2
0
5
10
15
20
4
6
8
10
(V)
12
14
V
(V)
V
GE
GE
Fig. 13 - Typ. Transfer Characteristics
Fig. 12 - Typical VCE vs. VGE
VCE = 50V; tp = 20µs
TJ = 150°C
1000
100
10
8000
7000
6000
5000
4000
3000
2000
1000
0
td
OFF
t
F
E
ON
td
ON
E
OFF
t
R
0
10
20
30
40
50
0
10
20
30
40
50
I
(A)
I
(A)
C
C
Fig. 14 - Typ. Energy Loss vs. IC
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
TJ = 150°C; L = 0.62mH; VCE = 600V, RG = 10; VGE = 15V
7000
10000
6000
td
OFF
1000
5000
4000
3000
2000
E
ON
t
F
td
ON
100
t
E
R
OFF
10
0
20
40
60
80
100
0
20
40
60
80
100
R
( )
G
Rg ( )
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 25A; VGE = 15V
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 0.62mH; VCE = 600V, ICE = 25A; VGE = 15V
5
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
18
14
10
6
14
R
12
10
8
G =
R
10
G =
R
47
G =
6
R
100
G =
4
2
2
4
6
8
10
(A)
12
14
16
0
20
40
60
80
100
120
R
(
)
I
G
F
Fig. 19 - Typ. Diode IRR vs. RG
Fig. 18 - Typ. Diode IRR vs. IF
TJ = 150°C
TJ = 150°C
15
13
11
9
1800
1600
1400
1200
1000
800
16A
8A
600
7
4A
400
200
5
0
100
200
300
400
500
0
100
200
300
400
500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 20 - Typ. Diode IRR vs. diF/dt
CC = 600V; VGE = 15V; IF = 8.0A; TJ = 150°C
Fig. 21 - Typ. Diode QRR vs. diF/dt
V
VCC = 600V; VGE = 15V; TJ = 150°C
40
30
20
10
160
120
80
350
300
250
200
150
100
50
I
R
=
sc
G
T
sc
R
G
=10
R
= 47
G
R
= 100
G
40
0
8
10
12
14
(V)
16
18
2
4
6
8
10 12 14 16 18
(A)
V
I
GE
F
Fig. 23 - VGE vs. Short Circuit Time
CC = 600V; TC = 150°C
Fig. 22 - Typ. Diode ERR vs. IF
V
TJ = 150°C
6
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
16
10000
1000
100
14
12
10
8
V
V
= 600V
= 400V
CES
CES
Cies
6
Coes
Cres
4
2
0
10
0
20
40
60
80 100 120 140
0
100
200
300
(V)
400
500
600
Q
, Total Gate Charge (nC)
V
G
CE
Fig. 25 - Typical Gate Charge vs. VGE
CE = 25A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
0.05
Ri (°C/W)
0.010602
0.112078
0.169631
0.098447
i (sec)
0.000026
0.000155
0.003607
0.018763
R1
R1
R2
R2
R3
R3
R4
R4
0.01
0.02
J J
CC
1 1
0.01
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
Ri (°C/W)
i (sec)
0.000015
0.000462
0.003501
0.021934
0.10
R1
R1
R2
R2
R3
R3
R4
R4
0.1
0.016084
0.462040
0.554156
0.266112
0.05
J J
CC
1 1
2 2
3 3
4 4
0.02
0.01
Ci= iRi
Ci= iRi
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
Rg
DUT /
DRIVER
VCC
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
8
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
1000
800
600
400
200
0
50
40
30
20
10
0
1000
800
600
400
200
0
50
40
30
20
10
0
tf
TEST
CURRENT
tr
90% ICE
90% ICE
10% VCE
10% ICE
10% ICE
10% VCE
Eon Loss
0.5
Eoff Loss
-200
-10
-200
-10
-0.5
0
1
-0.5
0
0.5
1
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
800
200
45
QRR
VCE
600
150
30
tRR
400
100
50
0
15
0
ICE
200
Peak
IRR
0
-15
-10
time (µs)
-200
-50
-30
-20
0
10
-0.20 0.00 0.20 0.40 0.60 0.80
time (µs)
Fig. WF3 - Typ. Diode Recovery Waveform
Fig. WF4 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.3
9
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
RECTIFIER
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
135H
LOGO
56
57
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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May 29, 2014
IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 6
5 7
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRG7PH44K10DPbF/IRG7PH44K10D-EPbF
Qualification Information†
Qualification Level
Industrial†
(per JEDEC JESD47F) ††
TO-247AC
TO-247AD
N/A
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
Corrected pin assignment from “G” to “C” on page1
5/29/14
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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May 29, 2014
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