IRG7PH42UD1PBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS; 超低VF二极管感应加热和软开关应用绝缘栅双极晶体管
| 型号： | IRG7PH42UD1PBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS |
| 文件： | 总9页 (文件大小：425K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97480
IRG7PH42UD1PbF
IRG7PH42UD1-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
Features
C
• Low VCE (ON) trench IGBT technology
• Low switching losses
• Square RBSOA
• Ultra-low VF Diode
• 1300Vpk repetitive transient capacity
VCES = 1200V
I NOMINAL = 30A
G
• 100% of the parts tested for ILM
TJ(max) = 150°C
VCE(on) typ. = 1.7V
• Positive VCE (ON) temperature co-efficient
• Tight parameter distribution
• Lead free package
E
n-channel
Benefits
C
C
• Device optimized for induction heating and soft switching
applications
• High Efficiency due to Low VCE(on), low switching losses
and Ultra-low VF
• Rugged transient performance for increased reliability
• Excellent current sharing in parallel operation
• Low EMI
E
E
C
C
G
G
TO-247AC
TO-247AD
IRG7PH42UD1PbF
IRG7PH42UD1-EP
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
1200
85
V
IC @ TC = 25°C
Continuous Collector Current
Continuous Collector Current
Nominal Current
IC @ TC = 100°C
45
INOMINAL
30
ICM
Pulse Collector Current, VGE=15V
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Diode Repetitive Peak Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
90
A
ILM
120
70
IF @ TC = 25°C
IF @ TC = 100°C
IFRM
35
120
±30
313
125
-55 to +150
VGE
V
PD @ TC = 25°C
PD @ TC = 100°C
TJ
W
Maximum Power Dissipation
Operating Junction and
°C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.4
Units
RθJC (IGBT)
RθJC (Diode)
RθCS
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
1.05
–––
°C/W
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RθJA
–––
1
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3/26/10
IRG7PH42UD1PbF/IRG7PH42UD1-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
Repetitive Transient Collector-to-Emitter Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
1300
—
V
VGE = 0V, IC = 100μA
≤
VGE = 0V, TJ=75°C, PW 10μs
VCES(Transient)
ΔV(BR)CES/ΔTJ
—
—
V
—
1.2
1.7
2.0
—
V/°C VGE = 0V, IC = 2.0mA (25°C-150°C)
—
2.0
—
IC = 30A, VGE = 15V, TJ = 25°C
VCE(on)
Collector-to-Emitter Saturation Voltage
V
—
IC = 30A, VGE = 15V, TJ = 150°C
VGE(th)
gfe
Gate Threshold Voltage
3.0
—
6.0
—
V
S
VCE = VGE, IC = 1.0mA
Forward Transconductance
32
VCE = 50V, IC = 30A, PW = 80μs
—
1.0
230
1.15
1.10
—
100
—
VGE = 0V, VCE = 1200V
ICES
Collector-to-Emitter Leakage Current
μA
—
VGE = 0V, VCE = 1200V, TJ = 150°C
IF = 30A
—
1.30
—
VFM
IGES
Diode Forward Voltage Drop
V
—
IF = 30A, TJ = 150°C
Gate-to-Emitter Leakage Current
—
±100
nA VGE = ±30V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Min. Typ. Max. Units
Conditions
Qg
—
—
—
180
270
IC = 30A
nC VGE = 15V
VCC = 600V
Qge
Qgc
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
24
36
70
110
IC = 30A, VCC = 600V, VGE = 15V
μJ
Ω
Eoff
Turn-Off Switching Loss
—
1210 1450
RG = 10 , L = 200μH,TJ = 25°C
Energy losses include tail
td(off)
tf
Turn-Off delay time
Fall time
—
—
270
35
290
43
IC = 30A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200μH,TJ = 25°C
IC = 30A, VCC = 600V, VGE = 15V
ns
Eoff
Turn-Off Switching Loss
—
1936
—
μJ RG = 10Ω, L = 200μH,TJ = 150°C
Energy losses include tail
td(off)
tf
Turn-Off delay time
Fall time
—
—
—
—
—
300
160
3390
130
83
—
—
—
—
—
ns IC = 30A, VCC = 600V, VGE = 15V
Ω
RG = 10 , L = 200μH, TJ = 150°C
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF VCC = 30V
f = 1.0Mhz
TJ = 150°C, IC = 120A
VCC = 960V, Vp =1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V, L = 22μH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
ꢀ Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current
limitations arising from heating of the device leads may occur with some lead mounting arrangements.
Rating for Hard Switching conditions. Rating is higher in Soft Switching conditions.
2
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IRG7PH42UD1PbF/IRG7PH42UD1-EP
350
100
80
60
40
20
0
LIMITED BY PACKAGE
300
250
200
150
100
50
0
25
50
75
100
125
150
25
50
75
100
(°C)
125
150
10000
10
T , Case Temperature (°C)
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1.0
1000
I
= 1.0mA
C
0.9
0.8
0.7
0.6
0.5
100
10
1
25
50
75
100
125
150
10
100
1000
T , Temperature (°C)
V
(V)
J
CE
Fig. 3 - Typical Gate Threshold Voltage
(Normalized) vs. Junction Temperature
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
120
120
100
80
60
40
20
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
100
80
60
40
20
0
0
2
4
6
8
10
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
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3
IRG7PH42UD1PbF/IRG7PH42UD1-EP
140
120
100
80
120
100
80
60
40
20
0
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
25°C
150°C
60
40
20
0
0.0
0.5
1.0
1.5
2.0
0
2
4
6
8
10
V
(V)
F
V
(V)
CE
Fig. 8 - Typ. Diode Forward Voltage Drop
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 150°C; tp = 80μs
Characteristics
20
18
16
14
12
20
18
16
14
12
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
I
I
I
= 15A
= 30A
= 60A
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
120
100
80
60
40
20
0
T
= 25°C
J
I
I
I
= 15A
= 30A
= 60A
T
= 150°C
CE
CE
CE
J
6
4
2
0
2
4
6
8
10
5
10
15
20
V
, Gate-to-Emitter Voltage(V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
4
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IRG7PH42UD1PbF/IRG7PH42UD1-EP
5000
4000
3000
2000
1000
0
1000
E
OFF
td
OFF
t
F
100
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
TJ = 150°C; L = 200μH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
6500
5500
4500
td
OFF
1000
100
E
OFF
3500
2500
1500
t
F
10
0
20
40
60
80
100
120
0
25
50
75
100
125
Ω
( )
R
R
( )
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
TJ = 150°C; L = 200μH; VCE = 600V, ICE = 30A; VGE = 15V
10000
16
Cies
V
V
=600V
= 400V
14
12
10
8
CES
CES
1000
Coes
6
100
4
Cres
2
10
0
0
20
40
60
(V)
80
100
0
50
100
150
200
V
Q
, Total Gate Charge (nC)
G
CE
Fig. 17 - Typ. Capacitance vs. VCE
Fig. 18 - Typical Gate Charge vs. VGE
ICE = 30A; L = 680μH
VGE= 0V; f = 1MHz
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5
IRG7PH42UD1PbF/IRG7PH42UD1-EP
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02
0.01
0.1306 0.000313
τ
τ
J τJ
τ
Cτ
0.1752 0.002056
0.0814 0.008349
0.0031 0.0431
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
R1
R1
R2
R2
R3
R3
R4
R4
0.10
0.05
Ri (°C/W) τi (sec)
0.1
0.01186 0.00001
τ
τ
J τJ
τ
Cτ
0.39298 0.000547
0.43450 0.003563
0.22096 0.021596
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
6
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IRG7PH42UD1PbF/IRG7PH42UD1-EP
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
C force
diode clamp /
DUT
100K
L
D1 22K
-5V
C sense
DUT /
DRIVER
DUT
VCC
G force
0.0075μF
Rg
E sense
E force
Fig.C.T.3 - Switching Loss Circuit
Fig.C.T.4 - BVCES Filter Circuit
800
700
600
500
400
300
200
80
70
60
50
40
30
20
10
0
tf
90% ICE
5% VCE
5% ICE
100
0
Eoff Loss
-100
-10
-1 -0.5
0
0.5
time(μs)
1
1.5
2
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.3
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7
IRG7PH42UD1PbF/IRG7PH42UD1-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
EXAMPLE: THIS IS AN IRFPE30
WIT H AS S EMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
AS S EMB LE D ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEE K 35
AS S E MB L Y
LOT CODE
Note: "P" in assembly lineposition
indicates "L ead-F ree"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
8
www.irf.com
IRG7PH42UD1PbF/IRG7PH42UD1-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
EXAMPLE: THIS IS AN IRGP30B120KD-E
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
ASSEMBLED ON WW35, 2000
IN THE ASSEMBLY LINE "H"
035H
57
56
DATE CODE
YEAR 0 = 2000
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "L ead-F ree"
WEEK 35
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/2010
www.irf.com
9
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