IRG7PH42UD1MPBF_技术文档

IRG7PH42UD1MPbF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE

FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS

Features

• Low V_{CE (ON)}trench IGBT technology

C

V

_CES= 1200V

• Low switching losses

• Square RBSOA

• Ultra-low V_FDiode

• 1300Vpk repetitive transient capacity

• 100% of the parts tested for I_LM

• Positive V_{CE (ON)}temperature co-efficient

• Tight parameter distribution

• Lead free package

I_C= 45A, T_C= 100°C

T_J(max)= 150°C

G

V_CE(on)typ. = 1.7V @I_C= 30A

E

n-channel

Benefits

G

• Device optimized for induction heating and soft switching

applications

• High Efficiency due to Low V_CE(on), low switching losses

and Ultra-low V_F

• Rugged transient performance for increased reliability

• Excellent current sharing in parallel operation

• Low EMI

E

C

G

TO-247AD

G

C

E

Gate

Collector

Emitter

Base part number

Package Type

Standard Pack

Quantity

25

Orderable Part Number

Form

Tube

IRG7PH42UD1MPbF

TO-247AD

IRG7PH42UD1MPbF

Absolute Maximum Ratings

Parameter

Max.

Units

V_CES

Collector-to-Emitter Voltage

1200

V

V_{(BR) Transient}

Repetitive Transient Collector-to-Emitter Voltage

1300

85

I_C@ T_C= 25°C

Continuous Collector Current

I_C@ T_C= 100°C

Continuous Collector Current

45

200

I_CM

Pulse Collector Current, V_GE=15V

Clamped Inductive Load Current, V_GE=20V

A

I_LM

120

I_F@ T_C= 25°C

Diode Continous Forward Current

Diode Repetitive Peak Forward Current

70

I_F@ T_C= 100°C

35

I_FRM

120

V_GE

Continuous Gate-to-Emitter Voltage

Maximum Power Dissipation

Operating Junction and

±30

V

P_D@ T_C= 25°C

313

W

P_D@ T_C= 100°C

125

T_J

-55 to +150

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 sec.

Mounting Torque, 6-32 or M3 Screw

300 (0.063 in. (1.6mm) from case)

10 lbf·in (1.1 N·m)

Thermal Resistance

Parameter

Min.

–––

Typ.

–––

0.24

40

Max.

0.4

Units

R_θ_JC(IGBT)

R_θ_JC(Diode)

R_θ_CS

Thermal Resistance Junction-to-Case-(each IGBT)

Thermal Resistance Junction-to-Case-(each Diode)

Thermal Resistance, Case-to-Sink (flat, greased surface)

Thermal Resistance, Junction-to-Ambient (typical socket mount)

1.05

–––

°C/W

R_θ_JA

–––

1

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April 26, 2012

IRG7PH42UD1MPbF

Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

V_(BR)CES

Collector-to-Emitter Breakdown Voltage

Temperature Coeff. of Breakdown Voltage

1200

—

1.2

1.7

2.0

—

V

V_GE= 0V, I_C= 100μA

Δ

V_(BR)CES/ T _J

V/°C V_GE= 0V, I_C= 2.0mA (25°C-150°C)

—

2.0

—

I_C= 30A, V_GE= 15V, T_J= 25°C

V

V_CE(on)

Collector-to-Emitter Saturation Voltage

—

I_C= 30A, V_GE= 15V, T_J= 150°C

V_GE(th)

gfe

Gate Threshold Voltage

3.0

—

6.0

—

V

S

V_CE= V_GE, I_C= 1.0mA

Forward Transconductance

32

V

_CE= 50V, I_C= 30A, PW = 80μs

—

1.0

230

1.15

1.10

—

100

—

_GE= 0V, V_CE= 1200V

I_CES

Collector-to-Emitter Leakage Current

μA

—

V_GE= 0V, V_CE= 1200V, T_J= 150°C

I_F= 30A

—

1.30

—

V_FM

I_GES

Diode Forward Voltage Drop

V

—

I_F= 30A, T_J= 150°C

Gate-to-Emitter Leakage Current

—

±100

nA V_GE= ±30V

Switching Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Total Gate Charge (turn-on)

Min. Typ. Max. Units

Conditions

Q_g

—

180

24

270

36

I_C= 30A

nC V_GE= 15V

V_CC= 600V

Q_ge

Q_gc

Gate-to-Emitter Charge (turn-on)

Gate-to-Collector Charge (turn-on)

70

110

I

_C= 30A, V_CC= 600V, V_GE= 15V

μJ

E_off

Turn-Off Switching Loss

—

1210

1450

R_G= 10Ω, L = 200μH,T_J= 25°C

Energy losses include tail

t_d(off)

t_f

Turn-Off delay time

Fall time

—

270

35

290

43

I_C= 30A, V_CC= 600V, V_GE= 15V

ns

Ω

R_G= 10 , L = 200μH,T_J= 25°C

I_C= 30A, V_CC= 600V, V_GE= 15V

E_off

Turn-Off Switching Loss

—

1936

—

μJ R_G= 10Ω, L = 200μH,T_J= 150°C

Energy losses include tail

t_d(off)

t_f

Turn-Off delay time

Fall time

—

300

160

3390

130

83

—

ns I_C= 30A, V_CC= 600V, V_GE= 15V

Ω

R_G= 10 , L = 200μH, T_J= 150°C

C_ies

C_oes

C_res

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V_GE= 0V

pF V_CC= 30V

f = 1.0Mhz

T_J= 150°C, I_C= 120A

V_CC= 960V, Vp =1200V

Rg = 10Ω, V_GE= +20V to 0V

RBSOA

Reverse Bias Safe Operating Area

FULL SQUARE

Notes:

V_CC= 80% (V_CES), V_GE= 20V, L = 22μH, R_G= 10Ω.

Pulse width limited by max. junction temperature.

Refer to AN-1086 for guidelines for measuring V_(BR)CESsafely.

R_θis measured at T_Jof approximately 90°C.

ꢀ Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 78A. Note that current

limitations arising from heating of the device leads may occur with some lead mounting arrangements.

FBSOA operating conditions only

V_GE= 0V, T_J= 75°C, PW ≤ 10μs.

2

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April 26, 2012

IRG7PH42UD1MPbF

350

300

250

200

150

100

50

100

80

60

40

20

0

LIMITED BY PACKAGE

0

25

50

75

100

125

150

25

50

75

100

(°C)

125

150

10000

10

T , Case Temperature (°C)

T

C

Fig. 1 - Maximum DC Collector Current vs.

Fig. 2 - Power Dissipation vs. Case

Case Temperature

Temperature

1.0

1000

I

= 1.0mA

C

0.9

0.8

0.7

0.6

0.5

100

10

1

25

50

75

100

125

150

10

100

1000

T , Temperature (°C)

V

(V)

J

CE

Fig. 3 - Typical Gate Threshold Voltage

(Normalized) vs. Junction Temperature

Fig. 4 - Reverse Bias SOA

T_J= 150°C; V_GE= 20V

120

100

80

60

40

20

0

V

= 18V

= 15V

= 12V

= 10V

= 8.0V

GE

V

= 18V

= 15V

= 12V

= 10V

= 8.0V

GE

100

80

60

40

20

0

2

4

6

8

10

0

2

4

6

8

V

(V)

V

(V)

CE

Fig. 5 - Typ. IGBT Output Characteristics

T_J= -40°C; tp = 80μs

Fig. 6 - Typ. IGBT Output Characteristics

T_J= 25°C; tp = 80μs

3

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April 26, 2012

IRG7PH42UD1MPbF

140

120

100

80

120

100

80

60

40

20

0

V

= 18V

= 15V

= 12V

= 10V

= 8.0V

GE

25°C

150°C

60

40

20

0

0.0

0.5

1.0

(V)

1.5

2.0

0

2

4

6

8

10

V

F

V

(V)

CE

Fig. 8 - Typ. Diode Forward Voltage Drop

Fig. 7 - Typ. IGBT Output Characteristics

Characteristics

T_J= 150°C; tp = 80μs

20

18

16

14

12

18

16

14

12

I

= 15A

= 30A

= 60A

CE

I

= 15A

= 30A

= 60A

CE

10

8

10

8

6

4

2

0

5

10

15

20

5

10

15

20

V

(V)

GE

V

(V)

GE

Fig. 10 - Typical V_CEvs. V_GE

Fig. 9 - Typical V_CEvs. V_GE

T_J= 25°C

T_J= -40°C

20

18

16

14

12

10

8

120

100

80

60

40

20

0

T

= 25°C

J

I

= 15A

= 30A

= 60A

T

= 150°C

CE

J

6

4

2

0

2

4

6

8

10

5

10

15

20

V

, Gate-to-Emitter Voltage(V)

GE

V

(V)

GE

Fig. 12 - Typ. Transfer Characteristics

V_CE= 50V; tp = 10μs

Fig. 11 - Typical V_CEvs. V_GE

T_J= 150°C

4

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April 26, 2012

IRG7PH42UD1MPbF

5000

4000

3000

2000

1000

0

1000

E

OFF

td

OFF

t

F

100

0

10

20

30

I

40

(A)

50

60

70

0

10

20

30

I

40

(A)

50

60

70

C

Fig. 13 - Typ. Energy Loss vs. I_C

Fig. 14 - Typ. Switching Time vs. I_C

T_J= 150°C; L = 200μH; V_CE= 600V, R_G= 10Ω; V_GE= 15V

10000

6500

5500

4500

td

OFF

1000

100

E

OFF

3500

2500

1500

t

F

10

0

20

40

60

80

100

120

0

25

50

75

( )

100

125

Ω

( )

R

Ω

G

Fig. 15 - Typ. Energy Loss vs. R_G

Fig. 16 - Typ. Switching Time vs. R_G

T_J= 150°C; L = 200μH; V_CE= 600V, I_CE= 30A; V_GE= 15V

10000

16

Cies

V

=600V

= 400V

14

12

10

8

CES

1000

Coes

6

100

4

Cres

2

10

0

20

40

60

(V)

80

100

0

50

100

150

200

V

Q

, Total Gate Charge (nC)

G

CE

Fig. 17 - Typ. Capacitance vs. V_CE

Fig. 18 - Typical Gate Charge vs. V_GE

I_CE= 30A; L = 680μH

V_GE= 0V; f = 1MHz

5

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April 26, 2012

IRG7PH42UD1MPbF

1

0.1

D = 0.50

0.20

0.10

0.05

R₁

R₂

R₃

R₄

Ri (°C/W) τi (sec)

0.01

0.02

0.01

0.1306 0.000313

0.1752 0.002056

0.0814 0.008349

0.0031 0.0431

τ

^Jτ_J

τ

^Cτ

¹τ₁

Ci= τi/Ri

τ

²τ₂

³τ₃

⁴τ₄

0.001

0.0001

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

1E-006

1E-005

0.0001

0.001

0.01

0.1

t

, Rectangular Pulse Duration (sec)

1

Fig 19. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)

10

1

D = 0.50

0.20

R₁

R₂

R₃

R₄

0.10

0.05

Ri (°C/W) τi (sec)

0.1

0.01186 0.00001

τ

^Jτ_J

τ

^Cτ

0.39298 0.000547

0.43450 0.003563

0.22096 0.021596

¹τ₁

Ci= τi/Ri

τ

²τ₂

³τ₃

⁴τ₄

0.02

0.01

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig. 20. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)

6

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April 26, 2012

IRG7PH42UD1MPbF

L

80 V

+

-

DUT

VCC

0

DUT

VCC

1K

Rg

Fig.C.T.1 - Gate Charge Circuit (turn-off)

Fig.C.T.2 - RBSOA Circuit

C force

diode clamp /

DUT

100K

L

D1 22K

-5V

C sense

DUT /

DRIVER

DUT

VCC

G force

0.0075μF

Rg

E sense

E force

Fig.C.T.3 - Switching Loss Circuit

Fig.C.T.4 - BVCES Filter Circuit

800

700

600

500

400

300

200

80

70

60

50

40

30

20

10

0

tf

90% I_CE

5% V_CE

5% I_CE

100

0

Eoff Loss

-100

-10

-1 -0.5

0

0.5

time(μs)

1

1.5

2

Fig. WF1 - Typ. Turn-off Loss Waveform

@ T_J= 150°C using Fig. CT.3

7

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April 26, 2012

IRG7PH42UD1MPbF

TO-247AD Package Outline (^{Dimensions are shown in millimeters (inches))}

E

A

"A"

E2/2

A2

Q

E2

2X

D

B

L1

"A"

L

SEE

VI E W "B "

2x b2

3x

b

Ø .010

B A

c

b4

A1

e

2x

LEAD TIP

Ø P

A

Ø.010

B

-A-

S

D1

VI EW: "B "

THERMAL PAD

PLATING

BASE METAL

E1

(c)

Ø.010

B A

VIEW: "A" - "A"

(b, b2, b4)

S E CT ION: C-C, D-D, E -E

TO-247AD Part Marking Information

EXAMPLE: THIS IS AN IRFPE30

WITH ASSEMBLY

PART NUMBER

INTERNATIONAL

RECTIFIER

LOGO

LOT CODE 5657

ASSEMBLED ON WW 35, 2001

IN THE ASSEMBLY LINE "H"

IRFPE30

135H

57

56

DATE CODE

YEAR 1 = 2001

WEEK 35

ASSEMBLY

LOT CODE

Note: "P" in assembly lineposition

indicates "L ead-F ree"

LINE H

TO-247AD package is not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

8

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April 26, 2012

IRG7PH42UD1MPbF

Qualification information^†

Industrial^†

(per JEDEC JES D47F )^††

Qualification level

N/A

Moisture Sensitivity Level

RoHS compliant

TO-247AD

Yes

Qualification standards can be found at International Rectifier’s web site

http://www.irf.com/product-info/reliability

Applicable version of JEDEC standard at the time of product release.

Revision History

Date

Comments

4/25/2013

Corrected part number from "IRG7PH42UD1M" to "IRG7PH42UD1MPbF".

Data and specifications subject to change without notice.

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd.., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7903

Visit us at www.irf.com for sales contact information.

9

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April 26, 2012


型号：	IRG7PH42UD1MPBF
厂家：	Infineon
描述：	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE
文件：	总9页 (文件大小：276K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

IRG7PH42UD1MPBF [INFINEON]

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