IRG7PH46UD-EP [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG7PH46UD-EP |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：439K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97498
IRG7PH46UDPbF
IRG7PH46UD-EP
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
C
• Low VCE (ON) trench IGBT technology
• Low switching losses
• SquareRBSOA
VCES = 1200V
I NOMINAL = 40A
• 100% of the parts tested for ILM
• Positive VCE (ON) temperature co-efficient
• Ultra fast soft recovery co-pak diode
• Tightparameterdistribution
• Lead-Free
G
TJ(max) = 150°C
E
VCE(on) typ. = 1.7V
n-channel
Benefits
• High efficiency in a wide range of applications
• Suitable for a wide range of switching frequencies due to
low VCE (ON) and low switching losses
C
C
• Ruggedtransientperformanceforincreasedreliability
• Excellent current sharing in parallel operation
E
E
C
Applications
• U.P.S.
• Welding
• SolarInverter
• InductionHeating
C
G
G
TO-247AC
IRG7PH46UDPbF
TO-247AD
IRG7PH46UD-EP
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
1200
108
57
Units
Collector-to-Emitter Voltage
V
VCES
Continuous Collector Current (Silicon Limited)
Continuous Collector Current (Silicon Limited)
Nominal Current
IC @ TC = 25°C
IC @ TC = 100°C
40
INOMINAL
ICM
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
120
160
108
57
A
ILM
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
IF @ TC = 25°C
IF @ TC = 100°C
160
±30
390
156
IFM
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
V
VGE
W
PD @ TC = 25°C
PD @ TC = 100°C
-55 to +150
TJ
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
°C
TSTG
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.32
0.66
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Rθ (IGBT)
JC
Thermal Resistance Junction-to-Case-(each Diode)
Rθ (Diode)
JC
°C/W
Rθ
CS
Thermal Resistance, Case-to-Sink (flat, greased surface)
Rθ
JA
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
1
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04/26/2010
IRG7PH46UDPbF/IRG7PH46UD-EP
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
VGE = 0V, IC = 100µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
1200
—
1.2
1.7
2.0
—
—
V
∆V(BR)CES/∆TJ
VCE(on)
VGE = 0V, IC = 1.0mA (25°C-150°C)
IC = 40A, VGE = 15V, TJ = 25°C
IC = 40A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.6mA
—
—
V/°C
—
2.0
—
—
V
V
VGE(th)
Gate Threshold Voltage
3.0
—
6.0
—
∆
∆
VGE(th)/ TJ
VCE = VGE, IC = 1.6mA (25°C - 150°C)
VCE = 50V, IC = 40A, PW = 20µs
VGE = 0V, VCE = 1200V
VGE = 0V, VCE = 1200V, TJ = 150°C
IF = 40A
Threshold Voltage temp. coefficient
Forward Transconductance
-13
50
mV/°C
S
gfe
—
—
ICES
Collector-to-Emitter Leakage Current
—
1.5
2.0
3.1
3.0
—
100
—
µA
—
mA
V
VFM
Diode Forward Voltage Drop
—
4.8
—
IF = 40A, TJ = 150°C
—
IGES
VGE = ±30V
Gate-to-Emitter Leakage Current
—
±200
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min. Typ. Max. Units
Conditions
IC = 40A
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
220
320
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
VGE = 15V
30
50
nC
µJ
ns
VCC = 600V
85
130
IC = 40A, VCC = 600V, VGE = 15V
RG = 10Ω, L = 200µH,TJ = 25°C
2610 3515
1845 2725
4455 6240
Energy losses include tail & diode reverse recovery
45
40
60
60
450
60
—
—
—
—
—
—
—
—
—
—
td(off)
tf
Turn-Off delay time
Fall time
410
45
Eon
Eoff
Etotal
td(on)
tr
IC = 40A, VCC = 600V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
3790
2905
6695
40
RG=10Ω, L=200µH, TJ = 150°C
µJ
ns
pF
Energy losses include tail & diode reverse recovery
40
td(off)
tf
Turn-Off delay time
Fall time
480
200
4820
150
110
Cies
Coes
Cres
VGE = 0V
Input Capacitance
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
f = 1.0Mhz
TJ = 150°C, IC = 160A
VCC = 960V, Vp 1200V
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
1130
140
40
—
—
—
µJ
ns
A
VCC = 600V, IF = 40A
Rg = 10Ω, L =1.0mH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 200µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
ꢀ Values influenced by parasitic L and C of the test circuit.
2
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IRG7PH46UDPbF/IRG7PH46UD-EP
100
80
60
40
20
0
Duty cycle : 50%
Tj = 150°C
Tc = 100°C
Vcc = 600V
Gate drive as specified
Power Dissipation = 154W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
120
100
80
60
40
20
0
400
350
300
250
200
150
100
50
0
25
50
75
T
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
C
C
Fig. 2 - Power Dissipation vs. Case
Fig. 1 - Maximum DC Collector Current vs.
Temperature
CaseTemperature
1000
1000
100
100
10
1
10µsec
10
100µsec
DC
1msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1
10
100
(V)
1000
10000
10
100
1000
10000
V
V
(V)
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 150°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 150°C; VGE = 20V
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3
IRG7PH46UDPbF/IRG7PH46UD-EP
160
140
120
100
80
160
140
120
100
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 30µs
TJ = 25°C; tp = 30µs
160
140
120
160
140
120
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
100
80
60
40
20
0
100
80
60
40
20
0
-40°C
25°C
150°C
0
2
4
6
8
10
0.0
1.0
2.0
3.0
(V)
4.0
5.0
6.0
V
(V)
V
CE
F
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 8 - Typ. Diode Forward Characteristics
TJ = 150°C; tp = 30µs
tp = 30µs
12
10
8
12
10
8
I
I
I
= 20A
= 40A
= 80A
I
I
I
= 20A
= 40A
= 80A
CE
CE
CE
CE
CE
CE
6
4
2
0
6
4
2
0
4
8
12
16
20
4
8
12
16
20
V
(V)
GE
V
(V)
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
4
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IRG7PH46UDPbF/IRG7PH46UD-EP
12
10
8
120
100
80
I
I
I
= 20A
= 40A
= 80A
CE
CE
CE
T
= 25°C
60
40
20
0
J
6
T
= 150°C
J
4
2
0
4
5
6
7
8
9
4
8
12
16
20
V
, Gate-to-Emitter Voltage (V)
GE
V
(V)
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V
TJ = 150°C
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
1000
td
OFF
t
F
E
ON
100
td
ON
E
OFF
t
R
10
0
10 20 30 40 50 60 70 80
(A)
0
10 20 30 40 50 60 70 80
(A)
I
I
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
TJ = 150°C; L = 200µH; VCE = 600V, RG = 10Ω; VGE = 15V
10000
10000
9000
E
OFF
8000
7000
6000
td
OFF
1000
t
F
E
ON
5000
4000
3000
2000
100
t
td
R
ON
10
0
20
40
60
80
100
0
20
40
60
(Ω)
80
100
Ω
( )
R
R
G
G
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L = 200µH; VCE = 600V, ICE = 40A; VGE = 15V
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5
IRG7PH46UDPbF/IRG7PH46UD-EP
40
35
30
25
20
15
50
40
R
5.0Ω
10Ω
G =
R
30
20
10
G =
47Ω
R
R
G =
100Ω
G =
10
20
30
40
50
(A)
60
70
80
0
20
40
60
Ω)
80
100
I
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
6000
5000
4000
3000
2000
1000
40
35
30
25
20
15
80A
40A
5.0Ω
10Ω
20A
47Ω
100Ω
100 200 300 400 500 600 700 800 900 1000
200
300
400
500
600
700
800
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 19 - Typ. Diode IRR vs. diF/dt
Fig. 20 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 40A; TJ = 150°C
VCC = 600V; VGE = 15V; TJ = 150°C
1600
= 5.0
R
R
Ω
G
= 10
Ω
G
R
=
=
47Ω
100Ω
G
1200
800
400
0
R
G
20
30
40
50
(A)
60
70
80
I
F
Fig. 21 - Typ. Diode ERR vs. IF
TJ = 150°C
6
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IRG7PH46UDPbF/IRG7PH46UD-EP
10000
1000
100
16
14
V
V
= 600V
= 400V
CES
CES
Cies
12
10
8
Coes
Cres
6
4
2
10
0
0
100
200
300
(V)
400
500
600
0
40
80
120
160
200
240
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22 - Typ. Capacitance vs. VCE
ICE = 40A; L = 2400H
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.02
0.01330 0.000031
τ
τ
J τJ
τ
Cτ
0.01
0.08573 0.001470
0.12712 0.002625
0.09903 0.012121
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.001
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01
0.001
0.01
0.007488 0.000016
τ
τ
J τJ
τ
Cτ
0.235126 0.00057
0.280054 0.00409
0.136283 0.022342
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRG7PH46UDPbF/IRG7PH46UD-EP
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
VCC
R =
ICM
L
VCC
-5V
DUT
DUT /
DRIVER
VCC
Rg
Rg
Fig.C.T.4 - Resistive Load Circuit
Fig.C.T.3 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
Fig.C.T.5 - BVCES Filter Circuit
8
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IRG7PH46UDPbF/IRG7PH46UD-EP
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
900
800
700
600
500
400
300
200
100
0
90
80
70
60
50
40
30
20
10
0
tf
tr
TEST
CURRENT
90% ICE
90% test current
5% VCE
5%
VCE
10 % t es t
current
5% ICE
Eon Loss
Eof f Loss
-100
-10
-100
-10
-2 -1
0
1
2
3
4
5
-0.5
0
0.5
1
1.5
2
time (µs)
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
50
40
EREC
30
tRR
20
10
0
-10
10%
Peak
IRR
Peak
IRR
-20
-30
-40
-50
-0.20
0.00
0.20
time (µS)
0.40
0.60
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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9
IRG7PH46UDPbF/IRG7PH46UD-EP
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRG7PH46UDPbF/IRG7PH46UD-EP
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 04/2010
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11
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