IRG7PH50K10D-EPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode;
| 型号： | IRG7PH50K10D-EPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode 栅 |
| 文件： | 总12页 (文件大小：550K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PH50K10DPbF
IRG7PH50K10D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
VCES = 1200V
G
G
IC = 50A, TC =100°C
tSC 10µs, TJ(max) = 150°C
G
E
E
C
V
CE(ON) typ. = 1.9V @ IC = 35A
C
E
G
G
n-channel
IRG7PH50K10DPbF
IRG7PH50K10D‐EPbF
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
C
E
Gate
Collector
Emitter
Features
Benefits
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRG7PH50K10DPBF
IRG7PH50K10D-EPBF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
1200
90
50
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
160
ILM
Clamped Inductive Load Current, VGE=20V
Diode Continous Forward Current
Diode Continous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
160
20
10
±30
400
160
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
V
W
Maximum Power Dissipation
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.3
1.4
–––
–––
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
1.4
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 2mA (25°C-150°C)
—
—
5.0
1.9
2.4
—
2.4
—
7.5
V
IC = 35A, VGE = 15V, TJ = 25°C
IC = 35A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 1.7mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-16
—
mV/°C VCE = VGE, IC = 1.7mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
20
1.0
1200
—
2.5
2.4
—
35
—
±100
3.3
—
S
µA
V
V
CE = 50V, IC = 35A, PW = 20µs
GE = 0V, VCE = 1200V
ICES
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
VGE = 0V, VCE = 1200V, TJ = 150°C
nA VGE = ±30V
IGES
VF
V
V
IF = 8A
IF = 8A, TJ = 150°C
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
200
40
90
2.6
1.6
4.2
90
60
340
90
300
60
135
3.5
2.5
6.0
105
80
390
110
—
IC = 35A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 600V
IC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 25°C
—
—
—
—
—
Energy losses include tail & diode
reverse recovery
ns
3.5
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
2.8
6.3
70
—
mJ
IC = 35A, VCC = 600V, VGE=15V
RG = 5, TJ = 150°C
—
—
—
—
—
—
Energy losses include tail & diode
reverse recovery
60
ns
td(off)
Turn-Off delay time
350
tf
Fall time
—
—
—
—
250
4300
190
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
100
TJ = 150°C, IC = 160A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
190
130
13
—
—
—
µJ
ns
A
VCC = 600V, IF = 8A
VGE = 15V, Rg = 5
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
90
80
70
60
50
40
30
20
10
0
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 161W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
100
80
60
40
20
0
450
400
350
300
250
200
150
100
50
0
25
50
75
100
(°C)
125
150
25
50
75
100
(°C)
125
150
T
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10
1
10µsec
100µsec
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
DC
1
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C, VGE =15V
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
3
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
160
160
140
120
100
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 18V
VGE = 15V
140
VGE = 12V
120
100
80
60
40
20
0
VGE = 10V
VGE = 9.0V
VGE = 8.0V
60
40
20
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
V
(V)
V
(V)
CE
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
TJ = -40°C; tp = 20µs
160
140
120
100
80
160
140
120
100
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
T =150°C
J
T = 25°C
J
TJ = -40°C
60
60
40
40
20
20
0
0
0.0
2.0
4.0
6.0
(V)
8.0
10.0
0
1
2
3
4
5
6
7
8
9
10
V
F
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
TJ = 150°C; tp = 20µs
8
6
4
2
0
8
6
4
2
0
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
6
8
10
12
V
14
16
18
20
6
8
10
12
V
14
(V)
16
18
20
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
4
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
8
6
4
2
0
160
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
140
T
= 25°C
J
120
100
80
60
40
20
0
TJ = 150°C
4
6
8
10
12
14
6
8
10
12
V
14
16
18
20
V
Gate-to-Emitter Voltage(V)
(V)
GE,
GE
Fig. 12 - Typical VCE vs. VGE
Fig. 13 - Typ. Transfer Characteristics
TJ = 150°C
V
CE = 50V; tp = 20µs
10
8
1000
100
10
td
OFF
t
F
6
E
ON
td
ON
4
E
OFF
t
R
2
0
0
10 20 30 40 50 60 70 80
(A)
0
10
20
30
I
40
(A)
50
60
70
I
C
C
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
10
10000
8
6
4
2
0
E
td
ON
1000
100
10
OFF
td
ON
t
R
t
E
F
OFF
1
0
20
40
60
80
100
120
0
20
40
60
()
80
100
R
()
G
R
G
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 35A; VGE = 15V
5
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
18
14
10
6
14
R
12
10
8
G =
R
10
G =
R
47
G =
6
R
100
G =
4
2
2
4
6
8
10
(A)
12
14
16
0
20
40
60
( )
80
100
120
I
R
F
G
Fig. 18 - Typ. Diode IRR vs. IF
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
15
1800
1600
1400
1200
1000
800
13
11
9
16A
8A
600
7
4A
400
200
5
0
100
200
300
400
500
0
100
200
300
400
500
di /dt (A/µs)
di /dt (A/µs)
F
F
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 8A; TJ = 150°C
280
35
30
25
20
15
10
5
350
240
200
160
120
80
R
=
300
250
200
150
100
50
G
R
=10
G
I
sc
T
sc
R
= 47
G
R
= 100
G
40
10
11
12
13
(V)
14
15
16
0
2
4
6
8
10 12 14 16 18
(A)
V
GE
I
F
Fig. 23 - VCE vs. Short Circuit Time
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
Vcc= 600V; TC= 150°C
6
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
16
10000
1000
100
V
V
= 600V
= 400V
CES
CES
14
12
10
8
Cies
6
Coes
Cres
4
2
0
10
0
40
80
120
160
200
240
0
100
200
300
(V)
400
500
600
Q
, Total Gate Charge (nC)
G
V
CE
Fig. 25 - Typical Gate Charge vs. VGE
CE = 35A
Fig. 24 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
0.05
Ri(°C/W)
0.0149
0.0670
0.1384
0.0908
i (sec)
0.00005
0.00017
0.00422
0.02614
R1
R1
R2
R2
R3
R3
R4
R4
0.01
0.001
0.02
0.01
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
Ri(°C/W)
0.0108
0.5322
0.5460
0.3107
i (sec)
0.00001
0.00041
0.00340
0.02493
R1
R1
R2
R2
R3
R3
R4
R4
0.02
0.01
J J
CC
0.01
0.001
0.0001
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
7
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© 2012 International Rectifier January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
Rg
DUT /
DRIVER
VCC
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
8
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
800
700
600
500
400
300
200
100
0
80
70
60
50
40
30
20
10
0
tf
tr
TEST
CURRENT
90% ICE
90% ICE
10% ICE
10% VCE
10% ICE
10% VCE
Eon Loss
Eoff Loss
-100
-10
-100
-10
-0.4 -0.2
0
0.2 0.4 0.6 0.8
-0.4 -0.2
0
0.2 0.4 0.6 0.8
time(µs)
time (µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
700
350
45
VCE
600
500
400
300
200
100
0
300
250
200
150
100
50
QRR
30
tRR
ICE
15
0
Peak
IRR
-15
0
-100
-50
-30
-10 -5
0
5
10 15 20
-0.20 0.00 0.20 0.40 0.60 0.80
Time (uS)
time (µS)
Fig. WF4 - Typ. S.C. Waveform
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
9
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© 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
E
A
A
"A"
E2/2
A2
Q
E2
2X
D
B
L1
"A"
L
SEE
VIEW "B"
2x b2
3x b
Ø .010
B A
c
b4
A1
e
2x
LEAD TIP
Ø P
Ø.010
B A
-A-
S
D1
VIEW: "B"
THERMAL PAD
PLATING
BASE METAL
E1
(c)
Ø.010
B A
VIEW: "A" - "A"
(b, b2, b4)
SECTION: C-C, D-D, E-E
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
RECTIFIER
LOGO
LOT CODE 5657
IRFPE30
135H
57
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 6
5 7
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2012 International Rectifier
January 09, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
TO-247AC
Moisture Sensitivity Level
RoHS Compliant
N/A
TO-247AD
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
12
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© 2012 International Rectifier
January 09, 2013
相关型号：
IRG7R313UPBF
Insulated Gate Bipolar Transistor, 40A I(C), 330V V(BR)CES, N-Channel, TO-252AA, LEAD FREE, PLASTIC, DPAK-3
INFINEON
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