IRG7PSH54K10DPBF [INFINEON]
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRG7PSH54K10DPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode |
| 文件： | 总11页 (文件大小：752K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG7PSH54K10DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
VCES = 1200V
IC = 65A, TC =100°C
tSC 10µs, TJ(max) = 150°C
E
G
C
V
CE(ON) typ. = 1.9V @ IC = 50A
G
E
n-channel
IRG7PSH54K10DPbF
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
C
E
Gate
Collector
Emitter
Features
Benefits
Low VCE(ON) and switching losses
10µs Short Circuit SOA
Square RBSOA
High efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 150°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Base part number
Package Type
Super-247
Standard Pack
Form
Tube
Orderable Part Number
Quantity
IRG7PSH54K10DPbF
25
IRG7PSH54K10DPbF
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=20V
1200
120
65
V
IC @ TC = 25°C
IC @ TC = 100°C
ICM
A
200
ILM
Clamped Inductive Load Current, VGE=20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
200
50
25
±30
520
210
IF @ TC = 25°C
IF @ TC = 100°C
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
V
W
Maximum Power Dissipation
Operating Junction and
-40 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
C
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.24
0.70
–––
40
Units
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
RJC (IGBT)
RJC (Diode)
RCS
°C/W
RJA
1
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© 2013 International Rectifier
April 16, 2013
IRG7PSH54K10DPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
1200
—
—
1.3
—
—
V
VGE = 0V, IC = 250µA
V/°C VGE = 0V, IC = 5mA (25°C-150°C)
—
—
5.0
1.9
2.4
—
2.4
—
7.5
IC = 50A, VGE = 15V, TJ = 25°C
IC = 50A, VGE = 15V, TJ = 150°C
VCE = VGE, IC = 2.4mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
V
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-15
—
mV/°C VCE = VGE, IC = 2.4mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
—
—
36
1.0
1800
—
2.5
2.1
—
45
—
±200
3.5
—
S
V
V
CE = 50V, IC = 50A, PW = 20µs
GE = 0V, VCE = 1200V
ICES
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
µA
VGE = 0V, VCE = 1200V, TJ = 150°C
IGES
VF
nA VGE = ±30V
IF = 16A
IF = 16A, TJ = 150°C
V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
290
60
130
4.8
2.8
7.6
110
80
490
70
435
90
195
5.7
3.7
9.4
130
105
520
90
IC = 50A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 600V
IC = 50A, VCC = 600V, VGE=15V
RG = 5, TJ = 25°C
—
—
—
—
—
Energy losses include tail & diode
reverse recovery
ns
6.8
—
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
4.7
11.5
85
—
mJ
IC = 50A, VCC = 600V, VGE=15V
RG = 5, TJ = 150°C
—
—
—
—
—
—
Energy losses include tail & diode
reverse recovery
90
ns
td(off)
Turn-Off delay time
490
tf
Fall time
—
—
—
—
290
5700
290
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0Mhz
150
TJ = 150°C, IC = 200A
VCC = 960V, Vp ≤ 1200V
VGE = +20V to 0V
FULL SQUARE
RBSOA
Reverse Bias Safe Operating Area
TJ = 150°C,VCC = 600V, Vp ≤ 1200V
VGE = +15V to 0V
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
TJ = 150°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
640
170
25
—
—
—
µJ
ns
A
VCC = 600V, IF = 16A
VGE = 15V, Rg = 5
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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© 2013 International Rectifier
April 16, 2013
IRG7PSH54K10DPbF
120
100
80
60
40
20
0
For both:
Duty cycle : 50%
Tj = 150°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 213W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
125
100
75
50
25
0
600
500
400
300
200
100
0
25
50
75
100
125
150
25
50
75
100
(°C)
125
150
T
T
(°C)
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10
1
10µsec
100µsec
1msec
DC
Tc = 25°C
Tj = 150°C
Single Pulse
1
0.1
10
100
1000
10000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 4 - Forward SOA
TC = 25°C, TJ 150°C, VGE =15V
Fig. 5- Reverse Bias SOA
TJ = 150°C; VGE = 20V
3
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April 16, 2013
IRG7PSH54K10DPbF
200
160
120
80
200
160
120
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
40
40
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
8
9
10
V
(V)
V
(V)
CE
CE
Fig. 7 - Typ. IGBT Output Characteristics
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 20µs
TJ = -40°C; tp = 20µs
200
160
120
80
200
160
120
80
VGE = 18V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 9.0V
VGE = 8.0V
T =150°C
J
T = 25°C
J
TJ = -40°C
40
40
0
0
0.0
2.0
4.0
6.0
(V)
8.0
10.0
0
1
2
3
4
5
6
7
8
9
10
V
F
V
(V)
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 9 - Typ. Diode Forward Characteristics
tp = 20µs
TJ = 150°C; tp = 20µs
10
8
10
8
I
I
I
= 25A
= 50A
= 100A
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
6
8
10
12
V
14
16
18
20
6
8
10
12
V
14
16
18
20
(V)
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
4
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© 2013 International Rectifier
April 16, 2013
IRG7PSH54K10DPbF
10
8
200
160
120
80
T
= 25°C
J
TJ = 150°C
I
I
I
= 25A
= 50A
= 100A
CE
CE
CE
6
4
40
2
0
0
4
6
8
10
12
14
6
8
10
12
V
14
16
18
20
V
Gate-to-Emitter Voltage(V)
(V)
GE,
GE
Fig. 12 - Typical VCE vs. VGE
Fig. 13 - Typ. Transfer Characteristics
TJ = 150°C
V
CE = 50V; tp = 20µs
19
17
15
13
11
9
1000
100
10
td
OFF
t
F
E
ON
td
t
ON
R
7
E
5
OFF
3
1
0
25
50
(A)
75
100
0
25
50
(A)
75
100
I
C
I
C
Fig. 14 - Typ. Energy Loss vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
Fig. 15 - Typ. Switching Time vs. IC
TJ = 150°C; VCE = 600V, RG = 5; VGE = 15V
10000
1000
100
10
18
16
14
12
10
8
td
OFF
td
ON
E
t
ON
R
t
F
E
OFF
80
6
1
4
0
20
40
60
()
80
100
0
20
40
60
()
100
120
R
G
R
G
Fig. 16 - Typ. Energy Loss vs. RG
TJ = 150°C; VCE = 600V, ICE = 50A; VGE = 15V
Fig. 17 - Typ. Switching Time vs. RG
TJ = 150°C; VCE = 600V, ICE = 50A; VGE = 15V
5
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© 2013 International Rectifier
April 16, 2013
IRG7PH50K10DPbF/IRG7PH50K10D-EPbF
30
25
20
15
10
5
28
24
20
16
12
8
R
G =
R
10
G =
R
47
G =
R
100
G =
8
12
16
20
(A)
24
28
32
0
25
50
75
( )
100
125
I
R
G
F
Fig. 18 - Typ. Diode IRR vs. IF
Fig. 19 - Typ. Diode IRR vs. RG
TJ = 150°C
TJ = 150°C
3400
3000
2600
2200
1800
1400
1000
28
24
20
16
12
8
32A
16A
8A
50 100 150 200 250 300 350 400 450
0
100
200
300
400
500
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 21 - Typ. Diode QRR vs. diF/dt
VCC = 600V; VGE = 15V; TJ = 150°C
Fig. 20 - Typ. Diode IRR vs. diF/dt
VCC = 600V; VGE = 15V; IF = 16A; TJ = 150°C
1000
900
450
40
35
30
25
20
15
10
5
400
350
300
250
200
150
100
800
R
=
G
700
600
500
400
300
200
100
R
= 47
G
T
I
R
= 100
sc
sc
G
R
=10
G
4
12
20
(A)
28
36
9
10
11
12
V
13
14
15
16
I
(V)
F
GE
Fig. 23 - VCE vs. Short Circuit Time
Fig. 22 - Typ. Diode ERR vs. IF
TJ = 150°C
Vcc= 600V; TC= 150°C
6
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© 2013 International Rectifier
April 16, 2013
IRG7PSH54K10DPbF
10000
1000
100
16
14
12
10
8
Cies
V
V
= 600V
= 400V
CES
CES
6
Coes
Cres
4
2
10
0
0
100
200
300
(V)
400
500
600
0
50
100
150
200
250
300
V
Q
, Total Gate Charge (nC)
CE
G
Fig. 25 - Typical Gate Charge vs. VGE
Fig. 24 - Typ. Capacitance vs. VCE
ICE = 50A
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.20
0.10
Ri(°C/W)
i (sec)
0.00001
0.00026
0.00472
0.02724
R1
R1
R2
R2
R3
R3
R4
R4
0.05
0.01
0.02
0.0030
0.0606
0.1091
0.0667
J J
C
0.01
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26 Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1
0.1
D = 0.50
0.20
0.10
0.05
Ri(°C/W)
i (sec)
0.00009
0.00038
0.00539
0.03019
0.02
R1
R1
R2
R2
R3
R3
R4
R4
0.01
0.0259
0.2435
0.2877
0.1431
0.01
J J
CC
1 1
2 2
3 3
4 4
Ci= iRi
Ci= iRi
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 27 Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
April 16, 2013
IRG7PSH54K10DPbF
L
L
80 V
+
-
VCC
DUT
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
DC
DUT
VCC
-5V
Rg
DUT /
DRIVER
VCC
RSH
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
0.0075µF
Rg
E sense
E force
Fig.C.T.5 - Resistive Load Circuit
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Fig.C.T.6 - BVCES Filter Circuit
8
April 16, 2013
IRG7PSH54K10DPbF
600
500
400
300
200
100
0
120
600
500
400
300
200
100
0
120
100
80
tr
tf
100
80
TEST
CURRENT
60
60
90% ICE
40
40
90% ICE
10% VCE
10%ICE
20
20
10% VCE
10% ICE
0
0
Eon Loss
-20
Eoff Loss
-100
-100
-20
-0.8 -0.6 -0.4 -0.2
time (µs)
0
0.2 0.4
-0.5
0
0.5
1
1.5
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
@ TJ = 150°C using Fig. CT.4
20
700
600
500
400
300
200
100
0
700
VC
600
QRR
10
0
500
400
tRR
ICE
300
-10
-20
-30
200
100
0
Peak
IRR
-100
-100
10.00
-0.20 -0.05 0.10 0.25 0.40 0.55
-20.00
-10.00
0.00
time (µS)
Time (uS)
Fig. WF4 - Typ. S.C. Waveform
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.3
@ TJ = 150°C using Fig. CT.4
9
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© 2013 International Rectifier
April 16, 2013
IRG7PSH54K10DPbF
Super -247(TO-274AA) Package Outline
Dimensions are shown in millimeters (inches)
Super -247 (TO-274AA)Part Marking Information
EXAMPLE: THIS IS AN IRFPS37N50A WITH
ASSEMBLY LOT CODE 1789
ASSEMBLED ON WW 19, 1997
IN THE ASSEMBLY LINE "C"
PART NUMBER
INTERNATIONAL RECTIFIER
IRFPS37N50A
LOGO
719C
89
17
DATE CODE
YEAR 7 = 1997
WEEK 19
LINE C
ASSEMBLY LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
TOP
Super -247 package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10 www.irf.com © 2013 International Rectifier
April 16, 2013
IRG7PSH54K10DPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
Super-247
Moisture Sensitivity Level
RoHS Compliant
N/A
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
11
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April 16, 2013
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