IRG7T200CL12B [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | IRG7T200CL12B |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总8页 (文件大小：792K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRG5K50P5K50PM06E
IRG7T200CL12B
Low-Side Chopper IGBT with High-Side Diode
VCES = 1200V
IC = 200A at TC = 80°C
tSC ≥ 10µsec
POWIR 62™ Package
VCE(ON) = 1.90V at IC = 200A
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Features
Benefits
Low VCE(ON) and Switching Losses
RBSOA Tested
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
10µsec Short Circuit Safe Operating Area
POWIR 62™ Package
Lead Free
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
Package Type
Standard Pack
Quantity
Orderable Part Number
IRG7T200CL12B
POWIR 62™
Box
45
IRG7T200CL12B
Absolute Maximum Ratings of IGBT
VCES
VGES
Collector to Emitter Voltage
1200
±20
V
V
Continuous Gate to Emitter Voltage
TC = 80°C
TC = 25°C
TJ = 175°C
200
A
IC
Continuous Collector Current
390
A
ICM
PD
Pulse Collector Current
400
A
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
TC = 25°C, TJ = 175°C
1060
W
°C
°C
°C
TJ
175
TJOP
Tstg
-40 to +150
-40 to +125
1
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IRG5K50P5K50PM06E
IRG7T200CL12B
Electrical Characteristics of IGBT at TJ = 25°C (Unless Otherwise Specified)
Parameter
V(BR)CES
VGE(th)
Min.
1200
5.0
Typ.
Max.
Unit
Test Conditions
Collector to Emitter Breakdown
Voltage
V
VGE = 0V, IC = 2mA
Gate Threshold Voltage
5.8
6.5
V
V
IC = 10mA, VCE = VGE
1.90
2.20
2.20
TJ = 25°C
IC = 200A,
VGE = 15V
VCE(ON)
Collector to Emitter Saturation Voltage
V
TJ = 125°C
ICES
IGES
RGint
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Internal Gate Resistance
2
mA
nA
Ω
VGE = 0V, VCE = VCES
VGE = ±20V, VCE = 0
400
1.25
Switching Characteristics of IGBT
Parameter
Min.
Typ.
355
Max.
Unit
Test Conditions
TJ = 25°C
td(on)
Turn-on Delay Time
Rise Time
ns
320
TJ = 125°C
200
TJ = 25°C
tr
ns
ns
ns
mJ
210
TJ = 125°C
525
TJ = 25°C
VCC=600V,
td(off)
Turn-off Delay Time
Fall Time
560
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
IC = 200A,
RG = 10Ω,
VGE=±15V,
170
tf
190
Inductive
Load
24.6
33.0
12.7
17.2
1800
22.5
1.56
0.94
Eon
Eoff
Turn-on Switching Loss
Turn-off Switching Loss
mJ
nC
Qg
Total Gate Charge
Cies
Coes
Cres
Input Capacitance
VCE = 25V, VGE = 0V,
nF
Output Capacitance
Reverse Transfer Capacitance
f ＝1MHz, TJ = 25°C
IC = 400A,VCC = 960V,
VP =1200V, RG = 15Ω,
VGE = +15V to 0V,
TJ = 150°C
RBSOA
SCSOA
Trapezoid
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
VCC = 600V, VGE = 15V,
TJ = 150°C
10
μs
2
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IRG5K50P5K50PM06E
IRG7T200CL12B
Absolute Maximum Ratings of Freewheeling Diode
VRRM
Repetitive Peak Reverse Voltage
1200
400
200
400
V
A
A
Diode Continuous Forward Current, TC = 25°C
Diode Continuous Forward Current, TC = 80°C
Pulse Diode Current
IF
IFM
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
Typ.
2.00
2.20
70
Max.
Unit Test Conditions
2.70
TJ = 25°C
IF = 200A ,
VGE = 0V
VF
Forward Voltage
V
A
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Irr
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
110
10.6
22.3
3.7
IF＝200A,
di/dt=1100A/μs,
Vrr = 600V,
Qrr
Erec
µC
mJ
VGE = -15V
8.1
Absolute Maximum Ratings of Brake-Chopper Diode
VRRM
Repetitive Peak Reverse Voltage
1200
400
200
400
V
A
A
Diode Continuous Forward Current, TC = 25°C
Diode Continuous Forward Current, TC = 80°C
Pulse Diode Current
IF
IFM
Electrical and Switching Characteristics of Brake-Chopper Diode
Parameter
Typ.
2.00
2.20
70
Max.
Unit Test Conditions
2.70
TJ = 25°C
IF = 200A ,
VF
Forward Voltage
V
A
VGE = 0V
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
Irr
Peak Reverse Recovery Current
Reverse Recovery Charge
Reverse Recovery Energy
110
10.6
22.3
3.7
IF＝200A,
di/dt=1100A/μs,
Vrr = 600V,
Qrr
Erec
µC
mJ
VGE = -15V
8.1
3
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IRG5K50P5K50PM06E
IRG7T200CL12B
Module Characteristics
Parameter
Min.
Typ.
Max.
Unit
Isolation Voltage
Viso
2500
V
(All Terminals Shorted),
f = 50Hz, 1minute
RθJC
RθJC
Junction-to-Case (IGBT)
0.141
0.204
°C/W
°C/W
Junction-to-Case (Freewheeling Diode)
Junction-to-Case
(Brake-Chopper Diode)
RθJC
0.204
0.1
°C/W
°C/W
Case-To-Sink
(Conductive Grease Applied)
RθCS
M
M
G
Power Terminals Screw: M6
Mounting Screw: M6
Weight
3.0
4.0
5.0
6.0
N·m
N·m
g
230
4
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IRG5K50P5K50PM06E
IRG7T200CL12B
400
360
320
280
240
200
160
120
80
400
360
320
280
240
200
160
120
80
V
=15V
GE
T
=125°C
J
T
T
=125°C
=25°C
J
J
V
V
V
V
V
=17V
GE
GE
GE
GE
GE
=15V
=13V
=11V
=9V
40
40
0
0
0.0
0.4
0.8
1.2
1.6
2.0
(V)
2.4
2.8
3.2
3.6
0.0
0.6
1.2
1.8
V
2.4
3.0
3.6
4.2
25
30
(V)
V
CE
CE
Fig.2 Typical IGBT Output Characteristics
Fig.1 Typical IGBT Saturation Characteristics
400
360
50
V
=0V,f =1MHz
V
=0V
GE
GE
C
T
T
=125°C
320
280
240
200
160
120
80
40
30
20
10
0
ies
J
J
C
=25°C
oes
40
0
0.0
0.6
1.2
1.8
(V)
2.4
3.0
3.6
0
5
10
15
20
V
(V)
V
CE
F
Fig. 4 Typical Capacitance Characteristics
Fig.3 Typical Forward Characteristics,
Freewheeling Diode
80
70
60
50
40
30
20
10
0
80
V
I
=600V,V
=+/-15V,
GE
V
=600V,V
=+/-15V,
GE
CC
CC
70
60
50
40
30
20
10
0
=200A,T =125°C
Rg =10 ohm,T =125°C
C
J
J
E
E
off
off
E
E
on
on
E
E
rec
rec
0
40
80 120 160 200 240 280 320 360 400
(A)
0
5
10
15
20
25
Rg ()
I
C
Fig.5 Typical Switching Loss vs. Collector Current Fig.6 Typical Switching Loss vs. Gate Resistance
5
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IRG5K50P5K50PM06E
IRG7T200CL12B
240
200
160
120
80
400
300
200
100
0
Duty Cycle:50%
T
=125°C
J
T
=80°C
C
Rg =10 ohm,V
=15V
GE
Square Wave:
V
cc
I
40
Module
Chip
Diode as specified
0
1
10
Frequency (KHz)
100
0
200
400
600
800
1000
1200
V
(V)
CES
Fig.7 Typical Load Current vs. Frequency
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.20
0.15
0.10
0.05
0.00
0.25
Z
:IGBT
Z
:Diode
thJC
thJC
0.20
0.15
0.10
0.05
0.00
0.001
0.01
0.1
1
2
0.001
0.01
0.1
1
2
t (s)
t (s)
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
400
360
320
280
240
200
160
120
80
V
=0V
GE
T
T
=125°C
J
J
=25°C
40
0
0.0
0.6
1.2
1.8
(V)
2.4
3.0
3.6
V
F
Fig.11 Typical Forward Characteristics,
Brake-Chopper Diode
6
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IRG5K50P5K50PM06E
IRG7T200CL12B
Internal Circuit:
Package Outline (Unit: mm):
7
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IRG5K50P5K50PM06E
IRG7T200CL12B
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
Industrial
Not Applicable
Yes
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
IR WORLD HEADQUARTERS: 101 North Sepulveda Blvd, El Segundo, California, 90245, USA
To contact International Rectifier, please visit: http://www.irf.com/whoto-call/
8
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