IRG7SC28UTRRPBF [INFINEON]
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3;
| 型号： | IRG7SC28UTRRPBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 栅 功率控制 晶体管 |
| 文件： | 总8页 (文件大小：200K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97569A
PDP TRENCH IGBT
IRG7SC28UPbF
Key Parameters
Features
VCE min
600
1.70
225
150
V
V
A
l
Advanced Trench IGBT Technology
VCE(ON) typ. @ IC = 40A
IRP max @ TC= 25°C
TJ max
l
Optimized for Sustain and Energy Recovery
circuits in PDP applications
TM
l
Low VCE(on) and Energy per Pulse (EPULSE
for improved panel efficiency
)
°C
l
l
High repetitive peak current capability
Lead Free package
C
C
E
C
G
G
D2Pak
IRG7SC28UPbF
E
n-channel
G
C
E
Gate
Collector
Emitter
Description
This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced
trenchIGBTtechnologytoachievelowVCE(on)andlowEPULSETM ratingpersiliconareawhichimprovepanel
efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current
capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP
applications.
Absolute Maximum Ratings
Max.
Parameter
Units
VGE
±30
Gate-to-Emitter Voltage
V
IC @ TC = 25°C
IC @ TC = 100°C
Continuous Collector Current, VGE @ 15V
Continuous Collector, VGE @ 15V
Repetitive Peak Current
60
30
A
IRP @ TC = 25°C
225
PD @TC = 25°C
PD @TC = 100°C
171
Power Dissipation
W
68
Power Dissipation
1.37
Linear Derating Factor
W/°C
°C
TJ
-40 to + 150
Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 seconds
Mounting Torque, 6-32 or M3 Screw
300
10lb in (1.1N m)
N
Thermal Resistance
Parameter
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Typ.
–––
Max.
0.73
40
Units
°C/W
RθJC
RθJA
–––
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07/11/11
IRG7SC28UPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Conditions
VGE = 0V, ICE = 1.0mA
Parameter
Min. Typ. Max. Units
BVCES
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
Breakdown Voltage Temp. Coefficient
600 ––– –––
V
VGE = 0V, ICE = 1.0A
V(BR)ECS
15 ––– –––
V
Reference to 25°C, ICE = 1.0mA
VGE = 15V, ICE = 12A
VGE = 15V, ICE = 24A
VGE = 15V, ICE = 40A
ΔΒVCES/ΔTJ
––– 0.57 ––– V/°C
––– 1.25 –––
––– 1.42 –––
1.70 1.95
––– 1.96 –––
––– 2.97 –––
––– 1.75 –––
V
VCE(on)
Static Collector-to-Emitter Voltage
VGE = 15V, ICE = 70A
VGE = 15V, ICE = 160A
VGE = 15V, ICE = 40A, TJ = 150°C
VCE = VGE, ICE = 250μA
VGE(th)
Gate Threshold Voltage
2.2
–––
–––
–––
–––
––– 4.7
V
V
/ T
Δ
GE(th) Δ
Gate Threshold Voltage Coefficient
Collector-to-Emitter Leakage Current
-11 ––– mV/°C
J
VCE = 600V, VGE = 0V
ICES
0.5
30
90
20
V
CE = 600V, VGE = 0V, TJ = 100°C
VCE = 600V, VGE = 0V, TJ = 125°C
CE = 600V, VGE = 0V, TJ = 150°C
VGE = 30V
GE = -30V
VCE = 25V, ICE = 40A
CE = 400V, IC = 40A, VGE = 15V
–––
μA
V
––– 305 –––
––– ––– 100
––– ––– -100
IGES
Gate-to-Emitter Forward Leakage
Gate-to-Emitter Reverse Leakage
Forward Transconductance
Total Gate Charge
Gate-to-Collector Charge
Turn-On delay time
Rise time
nA
V
gfe
Qg
Qgc
td(on)
tr
–––
–––
–––
–––
–––
55
70
25
30
35
–––
–––
–––
–––
–––
S
V
nC
IC = 40A, VCC = 400V
RG = 22Ω, L=100μH
TJ = 25°C
ns
ns
td(off)
tf
td(on)
tr
td(off)
tf
Turn-Off delay time
Fall time
––– 260 –––
––– 145 –––
IC = 40A, VCC = 400V
RG = 22Ω, L=100μH
TJ = 150°C
Turn-On delay time
Rise time
–––
–––
25
40
–––
–––
Turn-Off delay time
Fall time
––– 280 –––
––– 320 –––
100 ––– –––
tst
VCC = 240V, VGE = 15V, RG= 5.1Ω
Shoot Through Blocking Time
ns
L = 220nH, C= 0.40μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 25°C
L = 220nH, C= 0.40μF, VGE = 15V
VCC = 240V, RG= 5.1Ω, TJ = 100°C
––– 770 –––
––– 930 –––
EPULSE
Energy per Pulse
μJ
Class H1C (2000V)
(Per JEDEC standard JESD22-A114)
Human Body Model
Machine Model
ESD
Class M4 (425V)
(Per EIA/JEDEC standard EIA/JESD22-A115)
V
GE = 0V
Cies
Coes
Cres
LC
Input Capacitance
––– 1880 –––
VCE = 30V
Output Capacitance
–––
–––
–––
75
45
–––
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Internal Collector Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
LE
Internal Emitter Inductance
–––
7.5
–––
and center of die contact
Notes:
Half sine wave with duty cycle <= 0.02, ton=1.0μsec.
R is measured at TJ of approximately 90°C.
θ
Pulse width ≤ 400μs; duty cycle ≤ 2%.
2
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IRG7SC28UPbF
200
175
150
125
100
75
200
175
150
125
100
75
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
50
50
25
25
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig 2. Typical Output Characteristics @ 75°C
Fig 1. Typical Output Characteristics @ 25°C
200
200
175
150
175
150
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
= 6.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
125
100
75
50
25
0
125
100
75
50
25
0
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
V
(V)
V
(V)
CE
CE
Fig 3. Typical Output Characteristics @ 125°C
Fig 4. Typical Output Characteristics @ 150°C
200
175
2.0
I
= 20A
C
T
= 25°C
J
T
= 150°C
150
125
100
75
1.8
1.6
1.4
1.2
J
T = 25°C
J
T = 150°C
J
50
25
0
2
4
6
8
10
0
5
10
15
20
V
, Gate-to-Emitter Voltage (V)
V
, Voltage Gate-to-Emitter (V)
GE
GE
Fig 5. Typical Transfer Characteristics
Fig 6. VCE(ON) vs. Gate Voltage
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3
IRG7SC28UPbF
60
250
200
150
100
50
50
40
30
20
10
0
ton= 2μs
Duty cycle <= 0.05
Half Sine Wave
0
25
50
75
100
125
150
25
50
75
100
(°C)
125
150
Case Temperature (°C)
T
C
Fig 8. Typical Repetitive Peak Current vs. Case Temperature
Fig 7. Maximum Collector Current vs. Case Temperature
950
950
V
= 240V
L = 220nH
C = 0.4μF
CC
900
900
850
800
750
700
650
600
550
500
450
L = 220nH
C = variable
100°C
850
100°C
800
750
700
650
600
550
500
450
25°C
25°C
200 205 210 215 220 225 230 235 240
Collector-to-Emitter Voltage (V)
160 170 180 190 200 210 220 230 240
V
I , Peak Collector Current (A)
C
CE,
Fig 9. Typical EPULSE vs. Collector Current
Fig 10. Typical EPULSE vs. Collector-to-Emitter Voltage
1100
1000
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 240V
CC
C= 0.4μF
1000
900
800
700
600
500
400
L = 220nH
t = 1μs half sine
100
10μsec
C= 0.3μF
100μsec
1msec
10
C= 0.2μF
1
20
40
60
80
100 120 140 160
1.0
10
100
1000
T , Temperature (ºC)
V
(V)
J
CE
Fig 12. Forrward Bias Safe Operating Area
Fig 11. EPULSE vs. Temperature
4
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IRG7SC28UPbF
100000
10000
1000
100
16
14
12
10
8
V
= 0V,
= C
f = 1 MHZ
+ C , C SHORTED
ce
GS
I
= 40A
V
C
C
C
C
ies
ge
gd
= C
res
oes
gc
= C + C
ce
gc
= 120V
= 300V
= 400V
CES
V
CES
CES
V
Cies
6
4
Coes
Cres
2
10
0
0
100
200
300
400
500
0
10 20 30 40 50 60 70 80
, Total Gate Charge (nC)
V
, Collector-toEmitter-Voltage(V)
Q
CE
G
Fig 13. Typical Capacitance vs. Collector-to-Emitter Voltage
Fig 14. Typical Gate Charge vs. Gate-to-Emitter Voltage
6000
5000
4000
3000
2000
1000
0
E
OFF
E
ON
0
10 20 30 40 50 60 70 80 90
(A)
I
C
Fig. 15 - Typ. Energy Loss vs. IC
TJ = 150°C; L = 250μH; VCE = 400V, RG = 22Ω; VGE = 15V
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.01049 0.000003
τ
0.02
0.01
τ
J τJ
τ
Cτ
0.08396 0.000068
0.36433 0.000904
0.26987 0.008034
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 16. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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IRG7SC28UPbF
A
RG
C
PULSE A
PULSE B
DRIVER
L
VCC
B
Ipulse
RG
DUT
tST
Fig 16b. tst Test Waveforms
Fig 16a. tst and EPULSE Test Circuit
VCE
Energy
IC Current
L
VCC
DUT
0
1K
Fig 16c. EPULSE Test Waveforms
Fig. 17 - Gate Charge Circuit (turn-off)
6
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IRG7SC28UPbF
D2Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D2Pak (TO-263AB) Part Marking Information
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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7
IRG7SC28UPbF
D2Pak (TO-263AB) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
The specifications set forth in this data sheet are the sole and
exclusive specifications applicable to the identified product,
and no specifications or features are implied whether by
industry custom, sampling or otherwise. We qualify our
products in accordance with our internal practices and
procedures, which by their nature do not include qualification
to all possible or even all widely used applications. Without
limitation, we have not qualified our product for medical use or
applications involving hi-reliability applications. Customers
are encouraged to and responsible for qualifying product to
their own use and their own application environments,
especially where particular features are critical to operational
performance or safety. Please contact your IR representative if
you have specific design or use requirements or for further
information.
Data and specifications subject to change without notice.
This product has been designed for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/11
8
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