IRGBC20U [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A); 绝缘栅双极晶体管（ VCES = 600V ， VGE @ = 15V ， IC = 6.5A ）
| 型号： | IRGBC20U |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=6.5A) |
| 文件： | 总6页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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PD - 9.681A
IRGBC20U
INSULATED GATE BIPOLAR TRANSISTOR
UltraFast IGBT
Features
C
• Switching-loss rating includes all "tail" losses
• Optimized for high operating frequency (over 5kHz)
See Fig. 1 for Current vs. Frequency curve
VCES = 600V
V
CE(sat) ≤ 3.0V
G
@VGE = 15V, IC = 6.5A
E
n-channel
Description
Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have
higher usable current densities than comparable bipolar transistors, while at
the same time having simpler gate-drive requirements of the familiar power
MOSFET. They provide substantial benefits to a host of high-voltage, high-
current applications.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
600
V
IC @ TC = 25°C
13
IC @ TC = 100°C
6.5
A
ICM
52
ILM
Clamped Inductive Load Current
Gate-to-Emitter Voltage
52
VGE
±20
V
EARV
Reverse Voltage Avalanche Energy
Maximum Power Dissipation
5
mJ
W
PD @ TC = 25°C
60
24
PD @ TC = 100°C Maximum Power Dissipation
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
°C
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Min.
—
Typ.
—
Max.
2.1
—
Units
°C/W
RθJC
RθCS
RθJA
Wt
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
—
0.50
—
—
80
—
2.0 (0.07)
—
g (oz)
Revision 0
C-651
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IRGBC20U
Electrical Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Min. Typ. Max. Units
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0A
V(BR)CES
V(BR)ECS
Collector-to-Emitter Breakdown Voltage
Emitter-to-Collector Breakdown Voltage
600
20
—
—
—
—
—
V
V
∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage
0.69
2.2
2.8
2.5
—
—
V/°C VGE = 0V, IC = 1.0mA
IC = 6.5A
VCE(on)
Collector-to-Emitter Saturation Voltage
—
3.0
—
VGE = 15V
—
V
IC = 13A
See Fig. 2, 5
—
—
IC = 6.5A, TJ = 150°C
VCE = VGE, IC = 250µA
VGE(th)
Gate Threshold Voltage
3.0
—
5.5
—
∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage
-11
mV/°C VCE = VGE, IC = 250µA
gfe
Forward Transconductance
1.4 4.3
—
S
VCE = 100V, IC = 6.5A
VGE = 0V, VCE = 600V
ICES
Zero Gate Voltage Collector Current
—
—
—
—
—
—
250
1000
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = ±20V
IGES
Gate-to-Emitter Leakage Current
±100 nA
Switching Characteristics @ T = 25°C (unless otherwise specified)
J
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Min. Typ. Max. Units
Conditions
Qg
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
16
2.5
7.8
22
22
3.8
13
—
IC = 6.5A
Qge
Qgc
td(on)
tr
nC
ns
VCC = 400V
VGE = 15V
TJ = 25°C
See Fig. 8
12
—
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
td(off)
tf
Turn-Off Delay Time
Fall Time
71
95
91 280
Eon
Eoff
Ets
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
0.11
0.14
—
—
mJ
ns
See Fig. 9, 10, 11, 14
0.25 0.50
td(on)
tr
td(off)
tf
23
13
—
—
—
—
—
—
—
—
—
TJ = 150°C,
IC = 6.5A, VCC = 480V
VGE = 15V, RG = 50Ω
Energy losses include "tail"
See Fig. 10, 14
Turn-Off Delay Time
Fall Time
140
200
0.45
7.5
330
65
Ets
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
mJ
nH
LE
Measured 5mm from package
VGE = 0V
Cies
Coes
Cres
Output Capacitance
Reverse Transfer Capacitance
pF
VCC = 30V
ƒ = 1.0MHz
See Fig. 7
6.0
Notes:
Repetitive rating; V GE=20V, pulse width
limited by max. junction temperature.
( See fig. 13b )
Pulse width 5.0µs,
single shot.
Repetitive rating; pulse width limited
by maximum junction temperature.
VCC=80%(VCES), VGE=20V, L=10µH,
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
RG= 50Ω, ( See fig. 13a )
C-652
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IRGBC20U
20
16
For both:
Triangula r w ave:
Duty cyc le: 50%
T
T
= 125°C
J
= 90°C
sink
G ate d rive as specified
Power Dissipation = 13W
Clamp voltage:
80% of rated
Square w ave:
12
60% of ra ted
voltage
8
Ideal diodes
4
0
0.1
1
10
100
f, Frequency (kH z)
Fig. 1 - Typical Load Current vs. Frequency
(For square wave, I=IRMS of fundamental; for triangular wave, I=I PK
)
100
10
1
100
T
= 25°C
J
T
= 150°C
J
10
T
= 150°C
J
T
= 25°C
J
1
V
= 15V
V
= 100V
G E
20µs P ULSE W IDTH
CC
5µs P ULSE W IDTH
0.1
1
10
5
10
15 20
VCE , Collector-to-Emitter Voltage (V)
V
, G ate-to-E m itter Voltage (V )
G E
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics
C-653
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IRGBC20U
14
12
10
8
4.0
3.5
3.0
2.5
2.0
1.5
1.0
V
= 15V
V
= 15V
G E
G E
80µs PULSE W IDTH
I
= 13A
C
I
= 6.5A
= 3.3A
C
C
6
I
4
2
0
-60 -40 -20
0
20
40
60
80 100 120 140 160
25
50
75
100
125
150
T
C
, Case Temperature (°C)
T
, Case Temperature (°C)
C
Fig. 5 - Collector-to-Emitter Voltage vs.
Fig. 4 - Maximum Collector Current vs.
Case Temperature
Case Temperature
10
D
=
0 .50
0.20
1
0.1 0
0 .05
P
D M
0.1
0 .02
0.0 1
t
1
S IN G LE PU L SE
t
(T HE R M A L R ES PO N S E)
2
N otes:
1 . D uty factor D
=
t
/ t
1
2
2. Pea k T = P
x Z
+ T
C
D M
J
thJC
1
0.01
0.00001
0.0001
0.001
0.01
0.1
10
t
, Rectangular Pulse D ura tion (sec)
1
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
C-654
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IRGBC20U
20
16
12
8
700
V
I
= 400V
= 6.5A
V
C
C
C
= 0V,
f = 1MHz
C E
C
GE
ies
res
oes
= C + C
,
C
SHORTED
ge
gc
ce
= C
gc
600
500
400
300
200
100
0
= C + C
ce
gc
C
ies
C
oes
4
C
res
0
0
4
8
12
16
20
1
10
100
Q g , Total Gate Charge (nC)
VCE , Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Fig. 8 - Typical Gate Charge vs.
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage
0.35
0.34
0.33
0.32
10
V
V
T
I
= 480V
= 15V
= 25°C
= 6.5A
R
V
V
= 50
Ω
= 15V
= 480V
CC
G E
C
G
GE
CC
C
I
I
= 13A
= 6.5A
1
C
C
I
= 3.3A
C
0.1
2 0
2 5
3 0
3 5
4 0
45
50
55
-60 -40 -20
0
20
40
60
80 100 120 14 0 160
T
, Case Temperature (°C)
R G , Gate Resistance (
)
Ω
C
W
Fig. 9 - Typical Switching Losses vs. Gate
Fig. 10 - Typical Switching Losses vs.
Resistance
Case Temperature
C-655
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IRGBC20U
1.2
1000
100
10
Ω
= 50
R
T
V
V
V
T
= 20V
= 125°C
G
G E
J
= 150°C
= 480V
= 15V
C
C C
G E
1.0
0.8
0.6
0.4
0.2
SA FE OP ERATING AREA
1
0.1
1
10
100
1000
0
3
6
9
1 2
15
V
, C olle ctor-to-E m itter V oltage (V )
I
, C ollecto r-to-E m itter C urrent (A )
CE
C
Fig. 11 - Typical Switching Losses vs.
Fig. 12 - Turn-Off SOA
Collector-to-Emitter Current
Refer to Section D for the following:
Appendix C: Section D - page D-5
Fig. 13a - Clamped Inductive Load Test Circuit
Fig. 13b - Pulsed Collector Current Test Circuit
Fig. 14a - Switching Loss Test Circuit
Fig. 14b - Switching Loss Waveform
Package Outline 1 - JEDEC Outline TO-220AB
Section D - page D-12
C-656
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