IRGIB6B60KDPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGIB6B60KDPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总12页 (文件大小：254K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD-95321
IRGIB6B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
VCES = 600V
Features
• Low VCE (on) Non Punch Through IGBT Technology.
IC = 6.0A, TC=90°C
tsc > 10µs, TJ=175°C
VCE(on) typ. = 1.8V
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Lead-Free.
G
E
n-channel
Benefits
• Benchmark Efficiency for Motor Control.
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
TO-220
Full-Pak
Absolute Maximum Ratings
Parameter
Collector-to-Emitter Voltage
Max.
600
11
Units
V
VCES
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (Ref.Fig.C.T.5)
IC @ TC = 25°C
7.0
A
IC @ TC = 100°C
22
ICM
ꢀ
Clamped Inductive Load current
22
ILM
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
9.0
IF @ TC = 25°C
6.0
IF @ TC = 100°C
18
IFM
RMS Isolation Voltage, Terminal to Case, t = 1 min
Gate-to-Emitter Voltage
2500
±20
38
V
VISOL
VGE
Maximum Power Dissipation
W
PD @ TC = 25°C
D @ TC = 100°C
Maximum Power Dissipation
19
P
Operating Junction and
-55 to +175
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Thermal / Mechanical Characteristics
Parameter
Junction-to-Case- IGBT
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.9
Units
RθJC
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Weight
6.0
°C/W
Rθ
JC
–––
62
Rθ
CS
Rθ
JA
–––
g
Wt
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1
05/25/04
IRGIB6B60KDPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Ref.Fig.
V(BR)CES
VGE = 0V, IC = 500µA
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Voltage
600
—
—
V
V/°C
V
V
/ T
∆
VGE = 0V, IC = 1mA (25°C-150°C)
IC = 5A, VGE = 15V, TJ = 25°C
IC = 5A, VGE = 15V, TJ = 150°C
∆
—
0.30
—
(BR)CES
J
VCE(on)
1.50 1.80 2.20
5,6,7
—
—
3.5
—
—
—
—
—
—
—
—
—
2.20 2.50
2.30 2.60
I
C = 5A, VGE = 15V, TJ = 175°C
9,10,11
9,10,11
12
VGE(th)
VCE = VGE, IC = 250µA
Gate Threshold Voltage
4.5
-10
3.0
1.0
200
5.5
—
V
mV/°C
S
∆VGE(th)/∆TJ
gfe
VCE = VGE, IC = 1mA (25°C-150°C)
Threshold Voltage temp. coefficient
Forward Transconductance
VCE = 50V, IC = 5.0A, PW = 80µs
VGE = 0V, VCE = 600V
—
ICES
Zero Gate Voltage Collector Current
150
500
µA
VGE = 0V, VCE = 600V, TJ = 150°C
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 5.0A, VGE = 0V
720 1100
1.25 1.45
1.20 1.40
1.15 1.35
VFM
Diode Forward Voltage Drop
V
8
IF = 5.0A, VGE = 0V, TJ = 150°C
IF = 5.0A, VGE = 0V, TJ = 175°C
VGE = ±20V, VCE = 0V
IGES
Gate-to-Emitter Leakage Current
—
±100 nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Min. Typ. Max. Units
Conditions
Ref.Fig.
23
Qg
IC = 5.0A
CC = 400V
VGE = 15V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
18.2 27.3
Qge
Qgc
Eon
Eoff
Etot
td(on)
tr
V
1.9
9.2
110
135
245
25
2.85
13.8
210
245
455
34
nC
µJ
ns
CT1
IC = 5.0A, VCC = 400V
CT4
CT4
VGE = 15V, RG = 100Ω, L = 1.4mH
Ls= 150nH, TJ = 25°C ꢀ
IC = 5.0A, VCC = 400V
VGE = 15V, RG = 100Ω, L = 1.4mH
Ls= 150nH, TJ = 25°C
Rise time
17
26
td(off)
tf
Turn-Off delay time
215
13.2
150
190
340
28
230
22
Fall time
Eon
Eoff
Etot
td(on)
tr
IC = 5.0A, VCC = 400V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
260
300
560
37
CT4
13,15
WF1,WF2
14,16
CT4
VGE = 15V, RG = 100Ω, L = 1.4mH
Ls= 150nH, TJ = 150°C ꢀ
IC = 5.0A, VCC = 400V
µJ
ns
Ω
VGE = 15V, RG = 100 , L = 1.4mH
Rise time
17
26
td(off)
tf
Ls= 150nH, TJ = 150°C
Turn-Off delay time
240
18
255
27
WF1
WF2
Fall time
LE
Internal Emitter Inductance
Input Capacitance
7.5
290
34
—
nH Measured 5 mm from package
VGE = 0V
Cies
Coes
Cres
RBSOA
435
51
VCC = 30V
Output Capacitance
pF
22
4
Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
10
15
f = 1.0MHz
TJ = 150°C, IC = 18A, Vp = 600V
FULL SQUARE
VCC=500V,VGE = +15V to 0V,RG = 100Ω
CT2
CT3
Ω
TJ = 150°C, Vp = 600V, RG = 100
SCSOA
Short Circuit Safe Operating Area
10
—
—
µs
VCC=360V,VGE = +15V to 0V
WF4
ISC (PEAK)
WF4
Peak Short Circuit Collector Current
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
—
—
50
90
—
175
91
A
µJ
ns
A
Erec
trr
TJ = 150°C
17,18,19
20,21
VCC = 400V, IF = 5.0A, L = 1.4mH
70
Ω,
Irr
VGE = 15V, RG = 100
Ls= 150nH
Peak Reverse Recovery Current
Diode Reverse Recovery Charge
10
13
CT4,WF3
Qrr
350
455
nC di/dt = 400A/µs
ꢀ Vcc =80% (VCES), VGE = 20V, L =100µH, RG = 50Ω.
ꢁ Energy losses include "tail" and diode reverse recovery.
2
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IRGIB6B60KDPbF
12
10
8
40
35
30
25
20
15
10
5
6
4
2
0
0
0
20 40 60 80 100 120 140 160 180
(°C)
0
20 40 60 80 100 120 140 160 180
(°C)
T
T
C
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
100
10
1
100
10 µs
10
1
100 µs
1ms
0.1
DC
10
100
1000
V
(V)
CE
0.01
1
10
100
(V)
1000
10000
V
CE
Fig. 3 - Forward SOA
TC = 25°C; TJ ≤ 175°C
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =15V
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3
IRGIB6B60KDPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
V
= 18V
V
= 18V
GE
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
6
4
4
2
2
0
0
0
2
4
6
0
2
4
6
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
TJ = -40°C; tp = 80µs
30
25
20
15
10
5
20
18
16
14
12
10
8
V
= 18V
GE
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
6
0
4
0.0
2
0
0
2
4
6
V
(V)
CE
Fig. 8 - Typ. Diode Forward Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
tp = 80µs
TJ = 150°C; tp = 80µs
4
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IRGIB6B60KDPbF
20
18
16
14
12
10
8
20
18
16
14
12
10
8
I
I
I
= 3.0A
= 5.0A
= 10A
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
CE
CE
CE
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
40
20
18
16
14
12
10
8
T
T
= 25°C
35
30
25
20
15
10
5
J
J
= 150°C
I
I
I
= 3.0A
= 5.0A
= 10A
CE
CE
CE
6
T
= 150°C
J
4
T
= 25°C
15
2
J
0
0
0
5
10
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 12 - Typ. Transfer Characteristics
Fig. 11 - Typical VCE vs. VGE
VCE = 50V; tp = 10µs
TJ = 150°C
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5
IRGIB6B60KDPbF
700
1000
100
10
600
td
OFF
E
ON
500
400
E
OFF
t
F
300
200
100
0
td
ON
R
t
1
0
5
10
(A)
15
20
0
5
10
15
20
I
C
I
(A)
C
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
Fig. 14 - Typ. Switching Time vs. IC
TJ = 150°C; L=1.4mH; VCE= 400V
RG= 100Ω; VGE= 15V
1000
100
10
250
200
150
100
50
E
OFF
td
OFF
E
ON
td
ON
t
R
t
F
1
0
0
50
100
150
200
0
50
100
150
200
R
( )
Ω
R
(
)
Ω
G
G
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
Fig. 16 - Typ. Switching Time vs. RG
TJ = 150°C; L=1.4mH; VCE= 400V
ICE= 5.0A; VGE= 15V
6
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IRGIB6B60KDPbF
25
20
15
10
5
20
18
16
14
12
10
8
R
R
22
47
Ω
Ω
G =
G =
R
100
Ω
G =
R
150
Ω
6
G =
4
2
0
0
0
5
10
15
20
0
50
100
150
200
I
(A)
R
(
Ω)
F
G
Fig. 18 - Typical Diode IRR vs. RG
Fig. 17 - Typical Diode IRR vs. IF
TJ = 150°C; IF = 5.0A
TJ = 150°C
20
18
16
14
12
10
8
1200
1000
800
600
400
200
0
22
Ω
10A
47
Ω
100
Ω
150
Ω
5.0A
3.0A
6
4
2
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V;TJ = 150°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 5.0A; TJ = 150°C
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7
IRGIB6B60KDPbF
300
250
200
150
100
22
47
Ω
Ω
100
150
Ω
Ω
50
0
5
10
15
I
(A)
F
Fig. 21 - Typical Diode ERR vs. IF
TJ = 150°C
16
1000
100
10
14
12
10
8
Cies
300V
400V
Coes
Cres
6
4
2
0
1
0
5
10
15
20
1
10
100
Q
, Total Gate Charge (nC)
G
V
(V)
CE
Fig. 23 - Typical Gate Charge vs. VGE
Fig. 22- Typ. Capacitance vs. VCE
ICE = 5.0A; L = 600µH
VGE= 0V; f = 1MHz
8
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IRGIB6B60KDPbF
10
1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
0.05
τ
J τJ
τ
τ
Cτ
1.157
1.134
1.608
0.000607
0.107781
1.9249
0.1
0.02
0.01
τ
1τ1
τ
2 τ2
3τ3
Ci= τi/Ri
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 24. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W) τi (sec)
τ
J τJ
τ
τ
0.02
0.01
Cτ
2.530
1.354
2.114
0.001
0.1
τ
1τ1
τ
2 τ2
3τ3
0.068689
2.758
Ci= τi/Ri
0.01
0.001
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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9
IRGIB6B60KDPbF
L
L
VCC
80 V
+
-
DUT
DUT
480V
0
Rg
1K
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.1 - Gate Charge Circuit (turn-off)
diode clamp /
DUT
L
Driver
- 5V
DC
360V
DUT /
DRIVER
VCC
DUT
Rg
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
V
CC
R =
I
CM
DUT
VCC
Rg
Fig.C.T.5 - Resistive Load Circuit
10
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IRGIB6B60KDPbF
450
400
350
300
250
200
150
100
50
9
8
7
6
5
4
3
2
1
0
-1
500
400
300
200
100
0
25
20
90% ICE
15
TEST CURRENT
tf
10
90% test current
tr
5% VCE
5% ICE
5
10% test current
5% VCE
0
0
Eon Loss
-5
Eoff Loss
-50
-100
-0.20
0.30
time(µs)
0.80
16.00
16.10
16.20
16.30
16.40
time (µs)
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
50
0
8
500
50
40
30
20
10
0
6
QRR
tRR
-50
4
400
300
200
100
0
VCE
-100
-150
-200
-250
-300
-350
-400
-450
2
ICE
0
-2
-4
-6
-8
-10
-12
Peak
IRR
10%
Peak
IRR
-5.00
0.00
5.00
time (µS)
10.00
15.00
-0.06
0.04
0.14
0.24
time (µS)
Fig. WF4- Typ. S.C Waveform
@ TJ = 150°C using Fig. CT.3
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
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11
IRGIB6B60KDPbF
TO-220 Full-Pak Package Outline
Dimensions are shown in millimeters (inches)
10.60 (.417)
10.40 (.409)
3.40 (.133)
3.10 (.123)
4.80 (.189)
4.60 (.181)
ø
2.80 (.110)
2.60 (.102)
- A -
3.70 (.145)
3.20 (.126)
7.10 (.280)
6.70 (.263)
16.00 (.630)
15.80 (.622)
1.15 (.045)
MIN.
NOTES:
1 DIMENSIONING & TOLERANCING
PER ANSI Y14.5M, 1982
1
2
3
2 CONTROLLING DIMENSION: INCH.
3.30 (.130)
3.10 (.122)
- B -
13.70 (.540)
13.50 (.530)
C
D
A
B
0.48 (.019)
0.90 (.035)
0.70 (.028)
3X
0.44 (.017)
3X
1.40 (.055)
1.05 (.042)
3X
2.85 (.112)
2.65 (.104)
0.25 (.010)
A M
B
M
MINIMUM CREEPAGE
DISTANCE BETWEEN
A-B-C-D = 4.80 (.189)
2.54 (.100)
2X
EXAMPLE:
T
W
L
TO-220 Full-Pak Part Marking Information
A
IN
N
p
TO-220 Full-Pak package is not recommended for Surface Mount Application
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.05/04
12
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