IRGP4069DPBF [INFINEON]
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管，超快软恢复二极管
| 型号： | IRGP4069DPBF |
| 厂家： | 
Infineon |
| 描述： | INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE |
| 文件： | 总11页 (文件大小：428K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97425
IRGP4069DPbF
IRGP4069D-EPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
C
VCES = 600V
• Maximum Junction Temperature 175 °C
• 5 µS short circuit SOA
IC(Nominal) = 35A
• SquareRBSOA
G
tSC ≥ 5µs, TJ(max) = 175°C
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• TightParameterDistribution
• LeadFreePackage
E
VCE(on) typ. = 1.6V
n-channel
C
C
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
E
E
C
C
G
G
TO-247AC
TO-247AD
IRGP4069DPbF
IRGP4069D-EPbF
G
C
E
Gate
Collector
Emitter
Absolute Maximum Ratings
Parameter
Max.
Units
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
600
76
V
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
50
35
Pulse Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
ICM
105
A
ILM
140
Diode Continous Forward Current
Diode Continous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
76
IF @ TC = 25°C
50
IF @ TC = 100°C
140
IFM
±20
±30
268
V
VGE
W
PD @ TC = 25°C
Maximum Power Dissipation
134
PD @ TC = 100°C
Operating Junction and
-55 to +175
TJ
Storage Temperature Range
°C
TSTG
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.56
1.0
Units
°C/W
Rθ (IGBT)
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
JC
Rθ (Diode)
JC
Rθ
Thermal Resistance, Case-to-Sink (flat, greased surface)
–––
CS
Rθ
Thermal Resistance, Junction-to-Ambient (typical socket mount)
–––
JA
1
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10/2/09
IRGP4069DPbF/IRGP4069D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Collector-to-Emitter Breakdown Voltage
Min.
600
—
Typ.
—
Max. Units
Conditions
GE = 0V, IC = 100µA
V(BR)CES
V
—
V
∆V(BR)CES/∆TJ
VGE = 0V, IC = 1mA (25°C-175°C)
Temperature Coeff. of Breakdown Voltage
1.3
1.6
1.9
2.0
—
—
mV/°C
I
C = 35A, VGE = 15V, TJ = 25°C
IC = 35A, VGE = 15V, TJ = 150°C
C = 35A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.0mA
—
1.85
—
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
—
V
I
—
—
Gate Threshold Voltage
4.0
—
6.5
—
V
mV/°C
S
∆
∆
VGE(th)/ TJ
V
CE = VGE, IC = 1.0mA (25°C - 175°C)
VCE = 50V, IC = 35A, PW = 60µs
GE = 0V, VCE = 600V
Threshold Voltage temp. coefficient
Forward Transconductance
-18
25
gfe
—
—
ICES
V
Collector-to-Emitter Leakage Current
—
1.0
770
2.2
1.4
—
70
µA
VGE = 0V, VCE = 600V, TJ = 175°C
IF = 35A
—
—
VFM
IGES
Diode Forward Voltage Drop
—
3.8
—
V
IF = 35A, TJ = 175°C
—
V
GE = ±20V
Gate-to-Emitter Leakage Current
—
±100
nA
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
69
Max. Units
104
Conditions
Qg
I
C = 35A
VGE = 15V
CC = 400V
C = 35A, VCC = 400V, VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
18
27
44
508
753
1261
56
42
117
54
—
nC
µJ
ns
V
29
I
390
632
1022
46
Ω
RG = 10 , L = 200µH, LS = 150nH, TJ = 25°C
Energy losses include tail & diode reverse recovery
IC = 35A, VCC = 400V, VGE = 15V
R
G = 10Ω, L = 200µH, LS = 150nH, TJ = 25°C
33
td(off)
tf
Turn-Off delay time
Fall time
105
44
Eon
Eoff
Etotal
td(on)
tr
IC = 35A, VCC = 400V, VGE=15V
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
1013
929
1942
43
RG=10Ω, L=200µH, LS=150nH, TJ = 175°C
Energy losses include tail & diode reverse recovery
—
µJ
ns
pF
—
I
C = 35A, VCC = 400V, VGE = 15V
—
Ω
RG = 10 , L = 200µH, LS = 150nH
35
—
td(off)
tf
TJ = 175°C
Turn-Off delay time
Fall time
127
61
—
—
Cies
Coes
Cres
VGE = 0V
Input Capacitance
2113
197
65
—
VCC = 30V
Output Capacitance
Reverse Transfer Capacitance
—
—
f = 1.0Mhz
TJ = 175°C, IC = 140A
V
CC = 480V, Vp =600V
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
FULL SQUARE
Ω
Rg = 10 , VGE = +20V to 0V
V
CC = 400V, Vp =600V
5
—
—
µs
Ω
Rg = 10 , VGE = +15V to 0V
TJ = 175°C
Erec
trr
Reverse Recovery Energy of the Diode
Diode Reverse Recovery Time
—
—
—
304
120
25
—
—
—
µJ
ns
A
V
CC = 400V, IF = 35A
Ω
VGE = 15V, Rg = 10 , L =210µH, Ls = 150nH
Irr
Peak Reverse Recovery Current
Notes:
VCC = 80% (VCES), VGE = 20V, L = 19µH, RG = 10Ω.
Pulse width limited by max. junction temperature.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Rθ is measured at TJ of approximately 90°C.
2
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IRGP4069DPbF/IRGP4069D-EPbF
80
70
60
50
40
30
20
10
0
300
250
200
150
100
50
0
25
50
75
100
(°C)
125
150
175
25
50
75
100
(°C)
125
150
175
1000
10
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.
Fig. 2 - Power Dissipation vs. Case
Case Temperature
Temperature
1000
1000
100
100µsec
10µsec
100
10
1
10
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
0.1
1
10
100
1000
10
100
(V)
V
(V)
V
CE
CE
Fig. 3 - Forward SOA
TC = 25°C, TJ ≤ 175°C; VGE =15V
Fig. 4 - Reverse Bias SOA
TJ = 175°C; VGE =20V
140
120
100
80
140
120
100
80
V
V
V
V
V
= 18V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
= 15V
= 12V
= 10V
= 8.0V
V
GE
V
GE
V
GE
V
GE
60
60
40
40
20
20
0
0
0
2
4
6
8
10
0
2
4
6
8
V
(V)
V
(V)
CE
CE
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = ≤60µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = ≤60µs
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3
IRGP4069DPbF/IRGP4069D-EPbF
140
140
120
100
80
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
120
100
80
60
40
20
0
-40°C
25°C
175°C
60
40
20
0
0
2
4
6
8
10
0.0
1.0
2.0
(V)
3.0
4.0
V
F
V
(V)
CE
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = ≤60µs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80µs
20
18
16
14
12
20
18
16
14
12
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
10
8
10
8
6
6
4
4
2
2
0
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 10 - Typical VCE vs. VGE
Fig. 9 - Typical VCE vs. VGE
TJ = 25°C
TJ = -40°C
20
18
16
14
12
10
8
140
120
100
80
T = 25°C
J
I
I
I
= 18A
= 35A
= 70A
CE
CE
CE
T
= 175°C
J
60
6
40
4
20
2
0
0
4
5
6
7
8
9
10 11 12 13 14
5
10
15
20
V
Gate-to-Emitter Voltage (V)
V
(V)
GE,
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 12 - Typ. Transfer Characteristics
CE = 50V; tp = 60µs
TJ = 175°C
V
4
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IRGP4069DPbF/IRGP4069D-EPbF
4000
3500
3000
2500
2000
1500
1000
500
1000
td
OFF
E
ON
100
t
F
E
OFF
td
ON
t
R
0
10
0
10
20
30
I
40
(A)
50
60
70
0
10
20
30
I
40
(A)
50
60
70
C
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10Ω; VGE = 15V
3000
1000
2500
E
ON
2000
td
OFF
E
100
OFF
t
F
1500
1000
500
td
ON
t
R
10
0
25
50
75
100
0
10
20
30
(Ω)
40
50
R
G
Ω
Rg (
)
Fig. 16 - Typ. Switching Time vs. RG
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V
35
26
R
10Ω
24
22
20
18
16
14
G =
30
25
20
15
10
R
22Ω
G =
R
47Ω
G =
R
100Ω
G =
20
10
30
40
(A)
50
60
70
0
20
40
60
Ω)
80
100
I
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
TJ = 175°C
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IRGP4069DPbF/IRGP4069D-EPbF
2500
2250
2000
1750
1500
1250
1000
26
24
22
20
18
16
14
Ω
10
35A
70A
Ω
22
Ω
47
18A
Ω
100
100 200 300 400 500 600 700 800 900
200
300
400
500
600
700
di /dt (A/µs)
F
di /dt (A/µs)
F
Fig. 20 - Typ. Diode QRR vs. diF/dt
Fig. 19 - Typ. Diode IRR vs. diF/dt
V
CC = 400V; VGE = 15V; TJ = 175°C
VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C
300
225
150
75
20
15
10
5
400
Ω
= 10
R
G
I
350
300
250
200
150
100
sc
T
sc
Ω
= 22
R
G
Ω
= 47
R
R
G
Ω
= 100
G
0
0
8
10
12
14
(V)
16
18
10
20
30
40
(A)
50
60
70
V
I
GE
F
Fig. 22 - VGE vs. Short Circuit Time
Fig. 21 - Typ. Diode ERR vs. IF
VCC = 400V; TC = 25°C
TJ = 175°C
10000
1000
100
16
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
Cres
4
2
0
10
0
10
20
30
40
50
60
70
0
100
200
V
300
(V)
400
500
Q
, Total Gate Charge (nC)
G
CE
Fig. 24 - Typical Gate Charge vs. VGE
Fig. 23 - Typ. Capacitance vs. VCE
ICE = 35A; L = 740µH
VGE= 0V; f = 1MHz
6
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IRGP4069DPbF/IRGP4069D-EPbF
1
D = 0.50
0.20
0.10
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.05
τ
0.01041 0.000006
τ
J τJ
Cτ
τ
0.15911 0.000142
0.23643 0.002035
0.15465 0.013806
τ
1τ1
Ci= τi/Ri
τ
τ
2 τ2
0.02
0.01
3τ3
4τ4
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
1
D = 0.50
0.20
0.10
0.05
0.1
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
τ
0.01716 0.000031
τ
J τJ
τ
Cτ
0.02
0.01
0.35875 0.000517
0.41334 0.004192
0.20121 0.024392
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
0.01
0.001
0.0001
4τ4
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
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7
IRGP4069DPbF/IRGP4069D-EPbF
L
L
80 V
+
-
DUT
VCC
0
DUT
VCC
1K
Rg
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
4X
-5V
Rg
DC
DUT
VCC
DUT /
DRIVER
VCC
SCSOA
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
R = VCC
ICM
100K
D1 22K
C sense
VCC
DUT
DUT
G force
Rg
0.0075µF
E sense
E force
Fig.C.T.6 - BVCES Filter Circuit
Fig.C.T.5 - Resistive Load Circuit
8
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IRGP4069DPbF/IRGP4069D-EPbF
600
500
400
300
200
100
0
60
50
40
30
20
10
0
600
500
400
300
200
100
0
60
50
40
30
20
10
0
TEST
CURRENT
tf
tr
90% ICE
90% test
current
5% VCE
5% ICE
5% VCE
10% test
current
Eon
Loss
Eof f Loss
-100
-10
-100
-10
-0.5
0
0.5
1
1.5
2
6.4
6.6
6.8
time (µs)
7
7.2
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
700
600
350
300
250
200
150
100
50
40
30
20
10
0
ICE
QRR
tRR
500
400
300
200
100
0
VCE
10%
Peak
Peak
-10
-20
-30
IRR
IRR
0
-100
-50
-0.3
-0.2
-0.1
0
0.1
0.2
-4.5
0.5
5.5
Time (uS)
10.5
time (µS)
Fig. WF4 - Typ. S.C. Waveform
Fig. WF3 - Typ. Diode Recovery Waveform
@ TJ = 25°C using Fig. CT.3
@ TJ = 175°C using Fig. CT.4
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9
IRGP4069DPbF/IRGP4069D-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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IRGP4069DPbF/IRGP4069D-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/09
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11
相关型号：
IRGP4078D-EPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
IRGP4078DPBF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON
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