IRGP4069DPBF [INFINEON]

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE; 绝缘栅双极型晶体管,超快软恢复二极管
IRGP4069DPBF
型号: IRGP4069DPBF
厂家: Infineon    Infineon
描述:

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
绝缘栅双极型晶体管,超快软恢复二极管

晶体 二极管 双极型晶体管 功率控制 双极性晶体管 栅 局域网 超快软恢复二极管 快速软恢复二极管
文件: 总11页 (文件大小:428K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PD - 97425  
IRGP4069DPbF  
IRGP4069D-EPbF  
INSULATED GATE BIPOLAR TRANSISTOR WITH  
ULTRAFAST SOFT RECOVERY DIODE  
Features  
• Low VCE (ON) Trench IGBT Technology  
• Low Switching Losses  
C
VCES = 600V  
• Maximum Junction Temperature 175 °C  
• 5 µS short circuit SOA  
IC(Nominal) = 35A  
• SquareRBSOA  
G
tSC 5µs, TJ(max) = 175°C  
• 100% of The Parts Tested for ILM  
• Positive VCE (ON) Temperature Coefficient  
• TightParameterDistribution  
• LeadFreePackage  
E
VCE(on) typ. = 1.6V  
n-channel  
C
C
Benefits  
• High Efficiency in a Wide Range of Applications  
• Suitable for a Wide Range of Switching Frequencies due to  
Low VCE (ON) and Low Switching Losses  
• Rugged Transient Performance for Increased Reliability  
• Excellent Current Sharing in Parallel Operation  
E
E
C
C
G
G
TO-247AC  
TO-247AD  
IRGP4069DPbF  
IRGP4069D-EPbF  
G
C
E
Gate  
Collector  
Emitter  
Absolute Maximum Ratings  
Parameter  
Max.  
Units  
Collector-to-Emitter Voltage  
Continuous Collector Current  
Continuous Collector Current  
Nominal Current  
600  
76  
V
VCES  
IC @ TC = 25°C  
IC @ TC = 100°C  
INOMINAL  
50  
35  
Pulse Collector Current, VGE = 15V  
Clamped Inductive Load Current, VGE = 20V  
ICM  
105  
A
ILM  
140  
Diode Continous Forward Current  
Diode Continous Forward Current  
Diode Maximum Forward Current  
Continuous Gate-to-Emitter Voltage  
Transient Gate-to-Emitter Voltage  
Maximum Power Dissipation  
76  
IF @ TC = 25°C  
50  
IF @ TC = 100°C  
140  
IFM  
±20  
±30  
268  
V
VGE  
W
PD @ TC = 25°C  
Maximum Power Dissipation  
134  
PD @ TC = 100°C  
Operating Junction and  
-55 to +175  
TJ  
Storage Temperature Range  
°C  
TSTG  
Soldering Temperature, for 10 sec.  
Mounting Torque, 6-32 or M3 Screw  
300 (0.063 in. (1.6mm) from case)  
10 lbf·in (1.1 N·m)  
Thermal Resistance  
Parameter  
Min.  
–––  
–––  
–––  
–––  
Typ.  
–––  
–––  
0.24  
40  
Max.  
0.56  
1.0  
Units  
°C/W  
Rθ (IGBT)  
Thermal Resistance Junction-to-Case-(each IGBT)  
Thermal Resistance Junction-to-Case-(each Diode)  
JC  
Rθ (Diode)  
JC  
Rθ  
Thermal Resistance, Case-to-Sink (flat, greased surface)  
–––  
CS  
Rθ  
Thermal Resistance, Junction-to-Ambient (typical socket mount)  
–––  
JA  
1
www.irf.com  
10/2/09  
IRGP4069DPbF/IRGP4069D-EPbF  
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Collector-to-Emitter Breakdown Voltage  
Min.  
600  
Typ.  
Max. Units  
Conditions  
GE = 0V, IC = 100µA  
V(BR)CES  
V
V
V(BR)CES/TJ  
VGE = 0V, IC = 1mA (25°C-175°C)  
Temperature Coeff. of Breakdown Voltage  
1.3  
1.6  
1.9  
2.0  
mV/°C  
I
C = 35A, VGE = 15V, TJ = 25°C  
IC = 35A, VGE = 15V, TJ = 150°C  
C = 35A, VGE = 15V, TJ = 175°C  
VCE = VGE, IC = 1.0mA  
1.85  
VCE(on)  
VGE(th)  
Collector-to-Emitter Saturation Voltage  
V
I
Gate Threshold Voltage  
4.0  
6.5  
V
mV/°C  
S
VGE(th)/ TJ  
V
CE = VGE, IC = 1.0mA (25°C - 175°C)  
VCE = 50V, IC = 35A, PW = 60µs  
GE = 0V, VCE = 600V  
Threshold Voltage temp. coefficient  
Forward Transconductance  
-18  
25  
gfe  
ICES  
V
Collector-to-Emitter Leakage Current  
1.0  
770  
2.2  
1.4  
70  
µA  
VGE = 0V, VCE = 600V, TJ = 175°C  
IF = 35A  
VFM  
IGES  
Diode Forward Voltage Drop  
3.8  
V
IF = 35A, TJ = 175°C  
V
GE = ±20V  
Gate-to-Emitter Leakage Current  
±100  
nA  
Switching Characteristics @ TJ = 25°C (unless otherwise specified)  
Parameter  
Total Gate Charge (turn-on)  
Gate-to-Emitter Charge (turn-on)  
Gate-to-Collector Charge (turn-on)  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Rise time  
Min.  
Typ.  
69  
Max. Units  
104  
Conditions  
Qg  
I
C = 35A  
VGE = 15V  
CC = 400V  
C = 35A, VCC = 400V, VGE = 15V  
Qge  
Qgc  
Eon  
Eoff  
Etotal  
td(on)  
tr  
18  
27  
44  
508  
753  
1261  
56  
42  
117  
54  
nC  
µJ  
ns  
V
29  
I
390  
632  
1022  
46  
RG = 10 , L = 200µH, LS = 150nH, TJ = 25°C  
Energy losses include tail & diode reverse recovery  
IC = 35A, VCC = 400V, VGE = 15V  
R
G = 10, L = 200µH, LS = 150nH, TJ = 25°C  
33  
td(off)  
tf  
Turn-Off delay time  
Fall time  
105  
44  
Eon  
Eoff  
Etotal  
td(on)  
tr  
IC = 35A, VCC = 400V, VGE=15V  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
Turn-On delay time  
Rise time  
1013  
929  
1942  
43  
RG=10, L=200µH, LS=150nH, TJ = 175°C  
Energy losses include tail & diode reverse recovery  
µJ  
ns  
pF  
I
C = 35A, VCC = 400V, VGE = 15V  
RG = 10 , L = 200µH, LS = 150nH  
35  
td(off)  
tf  
TJ = 175°C  
Turn-Off delay time  
Fall time  
127  
61  
Cies  
Coes  
Cres  
VGE = 0V  
Input Capacitance  
2113  
197  
65  
VCC = 30V  
Output Capacitance  
Reverse Transfer Capacitance  
f = 1.0Mhz  
TJ = 175°C, IC = 140A  
V
CC = 480V, Vp =600V  
RBSOA  
SCSOA  
Reverse Bias Safe Operating Area  
Short Circuit Safe Operating Area  
FULL SQUARE  
Rg = 10 , VGE = +20V to 0V  
V
CC = 400V, Vp =600V  
5
µs  
Rg = 10 , VGE = +15V to 0V  
TJ = 175°C  
Erec  
trr  
Reverse Recovery Energy of the Diode  
Diode Reverse Recovery Time  
304  
120  
25  
µJ  
ns  
A
V
CC = 400V, IF = 35A  
VGE = 15V, Rg = 10 , L =210µH, Ls = 150nH  
Irr  
Peak Reverse Recovery Current  
Notes:  
 VCC = 80% (VCES), VGE = 20V, L = 19µH, RG = 10.  
‚ Pulse width limited by max. junction temperature.  
ƒ Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  
„ Rθ is measured at TJ of approximately 90°C.  
2
www.irf.com  
IRGP4069DPbF/IRGP4069D-EPbF  
80  
70  
60  
50  
40  
30  
20  
10  
0
300  
250  
200  
150  
100  
50  
0
25  
50  
75  
100  
(°C)  
125  
150  
175  
25  
50  
75  
100  
(°C)  
125  
150  
175  
1000  
10  
T
C
T
C
Fig. 1 - Maximum DC Collector Current vs.  
Fig. 2 - Power Dissipation vs. Case  
Case Temperature  
Temperature  
1000  
1000  
100  
100µsec  
10µsec  
100  
10  
1
10  
1
1msec  
DC  
Tc = 25°C  
Tj = 175°C  
Single Pulse  
0.1  
1
10  
100  
1000  
10  
100  
(V)  
V
(V)  
V
CE  
CE  
Fig. 3 - Forward SOA  
TC = 25°C, TJ 175°C; VGE =15V  
Fig. 4 - Reverse Bias SOA  
TJ = 175°C; VGE =20V  
140  
120  
100  
80  
140  
120  
100  
80  
V
V
V
V
V
= 18V  
V
= 18V  
= 15V  
= 12V  
= 10V  
= 8.0V  
GE  
GE  
GE  
GE  
GE  
GE  
= 15V  
= 12V  
= 10V  
= 8.0V  
V
GE  
V
GE  
V
GE  
V
GE  
60  
60  
40  
40  
20  
20  
0
0
0
2
4
6
8
10  
0
2
4
6
8
V
(V)  
V
(V)  
CE  
CE  
Fig. 5 - Typ. IGBT Output Characteristics  
TJ = -40°C; tp = 60µs  
Fig. 6 - Typ. IGBT Output Characteristics  
TJ = 25°C; tp = 60µs  
www.irf.com  
3
IRGP4069DPbF/IRGP4069D-EPbF  
140  
140  
120  
100  
80  
V
V
V
V
V
= 18V  
= 15V  
= 12V  
= 10V  
= 8.0V  
GE  
GE  
GE  
GE  
GE  
120  
100  
80  
60  
40  
20  
0
-40°C  
25°C  
175°C  
60  
40  
20  
0
0
2
4
6
8
10  
0.0  
1.0  
2.0  
(V)  
3.0  
4.0  
V
F
V
(V)  
CE  
Fig. 7 - Typ. IGBT Output Characteristics  
TJ = 175°C; tp = 60µs  
Fig. 8 - Typ. Diode Forward Characteristics  
tp = 80µs  
20  
18  
16  
14  
12  
20  
18  
16  
14  
12  
I
I
I
= 18A  
= 35A  
= 70A  
CE  
CE  
CE  
I
I
I
= 18A  
= 35A  
= 70A  
CE  
CE  
CE  
10  
8
10  
8
6
6
4
4
2
2
0
0
5
10  
15  
20  
5
10  
15  
20  
V
(V)  
V
(V)  
GE  
GE  
Fig. 10 - Typical VCE vs. VGE  
Fig. 9 - Typical VCE vs. VGE  
TJ = 25°C  
TJ = -40°C  
20  
18  
16  
14  
12  
10  
8
140  
120  
100  
80  
T = 25°C  
J
I
I
I
= 18A  
= 35A  
= 70A  
CE  
CE  
CE  
T
= 175°C  
J
60  
6
40  
4
20  
2
0
0
4
5
6
7
8
9
10 11 12 13 14  
5
10  
15  
20  
V
Gate-to-Emitter Voltage (V)  
V
(V)  
GE,  
GE  
Fig. 11 - Typical VCE vs. VGE  
Fig. 12 - Typ. Transfer Characteristics  
CE = 50V; tp = 60µs  
TJ = 175°C  
V
4
www.irf.com  
IRGP4069DPbF/IRGP4069D-EPbF  
4000  
3500  
3000  
2500  
2000  
1500  
1000  
500  
1000  
td  
OFF  
E
ON  
100  
t
F
E
OFF  
td  
ON  
t
R
0
10  
0
10  
20  
30  
I
40  
(A)  
50  
60  
70  
0
10  
20  
30  
I
40  
(A)  
50  
60  
70  
C
C
Fig. 13 - Typ. Energy Loss vs. IC  
Fig. 14 - Typ. Switching Time vs. IC  
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V  
TJ = 175°C; L = 200µH; VCE = 400V, RG = 10; VGE = 15V  
3000  
1000  
2500  
E
ON  
2000  
td  
OFF  
E
100  
OFF  
t
F
1500  
1000  
500  
td  
ON  
t
R
10  
0
25  
50  
75  
100  
0
10  
20  
30  
()  
40  
50  
R
G
Rg (  
)
Fig. 16 - Typ. Switching Time vs. RG  
Fig. 15 - Typ. Energy Loss vs. RG  
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V  
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 35A; VGE = 15V  
35  
26  
R
10Ω  
24  
22  
20  
18  
16  
14  
G =  
30  
25  
20  
15  
10  
R
22Ω  
G =  
R
47Ω  
G =  
R
100Ω  
G =  
20  
10  
30  
40  
(A)  
50  
60  
70  
0
20  
40  
60  
Ω)  
80  
100  
I
R
(
F
G
Fig. 17 - Typ. Diode IRR vs. IF  
Fig. 18 - Typ. Diode IRR vs. RG  
TJ = 175°C  
TJ = 175°C  
www.irf.com  
5
IRGP4069DPbF/IRGP4069D-EPbF  
2500  
2250  
2000  
1750  
1500  
1250  
1000  
26  
24  
22  
20  
18  
16  
14  
10  
35A  
70A  
22  
47  
18A  
100  
100 200 300 400 500 600 700 800 900  
200  
300  
400  
500  
600  
700  
di /dt (A/µs)  
F
di /dt (A/µs)  
F
Fig. 20 - Typ. Diode QRR vs. diF/dt  
Fig. 19 - Typ. Diode IRR vs. diF/dt  
V
CC = 400V; VGE = 15V; TJ = 175°C  
VCC = 400V; VGE = 15V; IF = 35A; TJ = 175°C  
300  
225  
150  
75  
20  
15  
10  
5
400  
= 10  
R
G
I
350  
300  
250  
200  
150  
100  
sc  
T
sc  
= 22  
R
G
= 47  
R
R
G
= 100  
G
0
0
8
10  
12  
14  
(V)  
16  
18  
10  
20  
30  
40  
(A)  
50  
60  
70  
V
I
GE  
F
Fig. 22 - VGE vs. Short Circuit Time  
Fig. 21 - Typ. Diode ERR vs. IF  
VCC = 400V; TC = 25°C  
TJ = 175°C  
10000  
1000  
100  
16  
14  
12  
10  
8
V
V
= 400V  
= 300V  
CES  
CES  
Cies  
6
Coes  
Cres  
4
2
0
10  
0
10  
20  
30  
40  
50  
60  
70  
0
100  
200  
V
300  
(V)  
400  
500  
Q
, Total Gate Charge (nC)  
G
CE  
Fig. 24 - Typical Gate Charge vs. VGE  
Fig. 23 - Typ. Capacitance vs. VCE  
ICE = 35A; L = 740µH  
VGE= 0V; f = 1MHz  
6
www.irf.com  
IRGP4069DPbF/IRGP4069D-EPbF  
1
D = 0.50  
0.20  
0.10  
0.1  
R1  
R1  
R2  
R2  
R3  
R3  
R4  
R4  
Ri (°C/W) τi (sec)  
0.05  
τ
0.01041 0.000006  
τ
J τJ  
Cτ  
τ
0.15911 0.000142  
0.23643 0.002035  
0.15465 0.013806  
τ
1τ1  
Ci= τi/Ri  
τ
τ
2 τ2  
0.02  
0.01  
3τ3  
4τ4  
0.01  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
SINGLE PULSE  
( THERMAL RESPONSE )  
0.001  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)  
10  
1
D = 0.50  
0.20  
0.10  
0.05  
0.1  
R1  
R1  
R2  
R2  
R3  
R3  
R4  
R4  
Ri (°C/W) τi (sec)  
τ
0.01716 0.000031  
τ
J τJ  
τ
Cτ  
0.02  
0.01  
0.35875 0.000517  
0.41334 0.004192  
0.20121 0.024392  
1τ1  
Ci= τi/Ri  
τ
τ
τ
2 τ2  
3τ3  
0.01  
0.001  
0.0001  
4τ4  
Notes:  
1. Duty Factor D = t1/t2  
2. Peak Tj = P dm x Zthjc + Tc  
SINGLE PULSE  
( THERMAL RESPONSE )  
1E-006  
1E-005  
0.0001  
0.001  
0.01  
0.1  
t
, Rectangular Pulse Duration (sec)  
1
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)  
www.irf.com  
7
IRGP4069DPbF/IRGP4069D-EPbF  
L
L
80 V  
+
-
DUT  
VCC  
0
DUT  
VCC  
1K  
Rg  
Fig.C.T.1 - Gate Charge Circuit (turn-off)  
Fig.C.T.2 - RBSOA Circuit  
diode clamp /  
DUT  
L
4X  
-5V  
Rg  
DC  
DUT  
VCC  
DUT /  
DRIVER  
VCC  
SCSOA  
Fig.C.T.3 - S.C. SOA Circuit  
Fig.C.T.4 - Switching Loss Circuit  
C force  
R = VCC  
ICM  
100K  
D1 22K  
C sense  
VCC  
DUT  
DUT  
G force  
Rg  
0.0075µF  
E sense  
E force  
Fig.C.T.6 - BVCES Filter Circuit  
Fig.C.T.5 - Resistive Load Circuit  
8
www.irf.com  
IRGP4069DPbF/IRGP4069D-EPbF  
600  
500  
400  
300  
200  
100  
0
60  
50  
40  
30  
20  
10  
0
600  
500  
400  
300  
200  
100  
0
60  
50  
40  
30  
20  
10  
0
TEST  
CURRENT  
tf  
tr  
90% ICE  
90% test  
current  
5% VCE  
5% ICE  
5% VCE  
10% test  
current  
Eon  
Loss  
Eof f Loss  
-100  
-10  
-100  
-10  
-0.5  
0
0.5  
1
1.5  
2
6.4  
6.6  
6.8  
time (µs)  
7
7.2  
time(µs)  
Fig. WF1 - Typ. Turn-off Loss Waveform  
Fig. WF2 - Typ. Turn-on Loss Waveform  
@ TJ = 175°C using Fig. CT.4  
@ TJ = 175°C using Fig. CT.4  
700  
600  
350  
300  
250  
200  
150  
100  
50  
40  
30  
20  
10  
0
ICE  
QRR  
tRR  
500  
400  
300  
200  
100  
0
VCE  
10%  
Peak  
Peak  
-10  
-20  
-30  
IRR  
IRR  
0
-100  
-50  
-0.3  
-0.2  
-0.1  
0
0.1  
0.2  
-4.5  
0.5  
5.5  
Time (uS)  
10.5  
time (µS)  
Fig. WF4 - Typ. S.C. Waveform  
Fig. WF3 - Typ. Diode Recovery Waveform  
@ TJ = 25°C using Fig. CT.3  
@ TJ = 175°C using Fig. CT.4  
www.irf.com  
9
IRGP4069DPbF/IRGP4069D-EPbF  
TO-247AC Package Outline  
Dimensions are shown in millimeters (inches)  
TO-247AC Part Marking Information  
TO-247AC package is not recommended for Surface Mount Application.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
10  
www.irf.com  
IRGP4069DPbF/IRGP4069D-EPbF  
TO-247AD Package Outline  
Dimensions are shown in millimeters (inches)  
TO-247AD Part Marking Information  
TO-247AD package is not recommended for Surface Mount Application.  
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/  
Data and specifications subject to change without notice.  
This product has been designed and qualified for Industrial market.  
Qualification Standards can be found on IR’s Web site.  
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  
TAC Fax: (310) 252-7903  
Visit us at www.irf.com for sales contact information. 10/09  
www.irf.com  
11  

相关型号:

IRGP4069PBF

INSULATED GATE BIPOLAR TRANSISTOR
INFINEON

IRGP4072DPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INFINEON

IRGP4078D-EPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON

IRGP4078DPBF

INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS
INFINEON

IRGP4078DPBF_15

Low Switching Losses
INFINEON

IRGP4085DPBF

PDP TRENCH IGBT
INFINEON

IRGP4086PBF

PDP TRENCH IGBT
INFINEON

IRGP420U

INSULATED GATE BIPOLAR TRANSISTOR(Vces=500V, @Vge=15V, Ic=7.5A)
INFINEON

IRGP420U-E

暂无描述
INFINEON

IRGP4262D-EPBF

Insulated Gate Bipolar Transistor
INFINEON

IRGP4262DPBF

Insulated Gate Bipolar Transistor
INFINEON

IRGP4263-EPBF

Insulated Gate Bipolar Transistor, 90A I(C), 650V V(BR)CES, N-Channel,
INFINEON