IRGP4760PBF [INFINEON]
Insulated Gate Bipolar Transistor;
| 型号： | IRGP4760PBF |
| 厂家： | 
Infineon |
| 描述： | Insulated Gate Bipolar Transistor 栅 |
| 文件： | 总11页 (文件大小：817K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
IRGP4760PbF
IRGP4760-EPbF
Insulated Gate Bipolar Transistor
VCES = 650V
C
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
CE(ON) typ. = 1.7V @ IC = 48A
G
E
E
C
C
G
G
E
V
IRGP4760PbF
IRGP4760‐EPbF
TO‐247AD
n-channel
TO‐247AC
Applications
• Industrial Motor Drive
• UPS
G
Gate
C
E
Collector
Emitter
• Solar Inverters
• Welding
Features
Benefits
Low VCE(ON) and Switching Losses
5.5µs Short Circuit SOA
Square RBSOA
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
Increased Reliability
Excellent Current Sharing in Parallel Operation
Lead-Free, RoHs compliant
Environmentally friendly
Base part number
Package Type
Standard Pack
Form
Orderable Part Number
Quantity
IRGP4760PbF
IRGP4760-EPbF
TO-247AC
TO-247AD
Tube
Tube
25
25
IRGP4760PbF
IRGP4760-EPbF
Absolute Maximum Ratings
Parameter
Max.
650
90
60
144
Units
V
A
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE=15V
ILM
VGE
Clamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
192
±20
325
V
W
PD @ TC = 25°C
PD @ TC = 100°C
Maximum Power Dissipation
160
TJ
Operating Junction and
-40 to +175
C
TSTG
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
Thermal Resistance Junction-to-Case
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.46
–––
Units
RJC
RCS
RJA
°C/W
–––
1
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August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V(BR)CES
V(BR)CES/TJ
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
650
—
—
0.69
—
—
V
VGE = 0V, IC = 100µA
V/°C VGE = 0V, IC = 3mA (25°C-175°C)
—
—
5.5
1.7
2.1
—
2.0
—
7.4
V
IC = 48A, VGE = 15V, TJ = 25°C
IC = 48A, VGE = 15V, TJ = 175°C
VCE = VGE, IC = 1.4mA
VCE(on)
VGE(th)
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
V
Threshold Voltage Temperature Coeff.
Forward Transconductance
—
-23
—
mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C)
VGE(th)/TJ
gfe
—
—
—
—
31
1.0
700
—
—
25
—
S
µA
V
V
CE = 50V, IC = 48A, PW = 20µs
GE = 0V, VCE = 650V
ICES
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
VGE = 0V, VCE = 650V, TJ = 175°C
nA VGE = ±20V
IGES
±100
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
Typ. Max Units
Conditions
Qg
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
—
—
—
—
—
—
—
—
—
—
—
96
30
40
1.7
1.0
2.7
70
60
140
30
145
45
60
2.6
1.9
4.5
90
80
160
50
IC = 48A
VGE = 15V
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
nC
mJ
VCC = 400V
IC = 48A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 25°C
Energy losses include tail & diode
reverse recovery
ns
2.9
—
Eoff
Etotal
td(on)
tr
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
—
—
—
—
—
1.4
4.3
55
—
—
—
—
—
mJ
IC = 48A, VCC = 400V, VGE=15V
RG = 10, L = 210µH, TJ = 175°C
Energy losses include tail & diode
reverse recovery
60
ns
td(off)
Turn-Off delay time
145
tf
Fall time
—
—
—
—
65
3000
150
80
—
—
—
—
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VGE = 0V
pF
VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 192A
VCC = 520V, Vp ≤ 650V
VGE = +20V to 0V
FULL SQUARE
RBSOA
SCSOA
Reverse Bias Safe Operating Area
Short Circuit Safe Operating Area
TJ = 150°C,VCC = 400V, Vp ≤ 650V
VGE = +15V to 0V
5.5
—
—
µs
Notes:
VCC = 80% (VCES), VGE = 20V.
R is measured at TJ of approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Maximum limits are based on statistical sample size characterization.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2
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IRGP4760PbF/IRGP4760-EPbF
100
90
80
70
60
50
40
30
20
10
For both:
Duty cycle : 50%
Tj = 175°C
Tcase = 100°C
Gate drive as specified
Power Dissipation = 163W
Square Wave:
VCC
I
Diode as specified
0.1
1
10
100
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental)
350
100
80
60
40
20
0
300
250
200
150
100
50
0
25
50
75
100
125
150
175
25
50
75
100
(°C)
125
150
175
T
(°C)
T
C
C
Fig. 3 - Power Dissipation vs.
Fig. 2 - Maximum DC Collector Current vs.
Case Temperature
Case Temperature
1000
100
10
1000
100
10µsec
10
100µsec
1
1msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
1
0.1
10
100
1000
1
10
100
(V)
1000
10000
V
(V)
V
CE
CE
Fig. 5 - Reverse Bias SOA
TJ = 175°C; VGE = 20V
Fig. 4 - Forward SOA
TC = 25°C; TJ ≤ 175°C; VGE = 15V
3
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August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
200
150
100
50
200
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
GE
GE
GE
GE
GE
150
100
50
0
0
0
2
4
6
8
10
0
2
4
6
8
10
V
(V)
V
(V)
CE
CE
Fig. 6 - Typ. IGBT Output Characteristics
Fig. 7 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 20µs
TJ = 25°C; tp = 20µs
12
200
150
100
50
V
V
V
V
V
= 18V
= 15V
= 12V
= 10V
= 8.0V
GE
GE
GE
GE
GE
10
8
I
= 24A
= 48A
= 96A
CE
I
CE
I
CE
6
4
2
0
0
5
10
15
20
0
2
4
6
8
10
V
(V)
V
(V)
GE
CE
Fig. 8 - Typ. IGBT Output Characteristics
Fig. 9 - Typical VCE vs. VGE
TJ = 175°C; tp = 20µs
TJ = -40°C
12
10
12
10
8
I
= 24A
= 48A
= 96A
CE
I
= 24A
= 48A
= 96A
CE
I
8
6
4
2
0
CE
I
CE
I
I
CE
CE
6
4
2
0
5
10
15
20
5
10
15
20
V
(V)
V
(V)
GE
GE
Fig. 11 - Typical VCE vs. VGE
Fig. 10 - Typical VCE vs. VGE
TJ = 175°C
TJ = 25°C
4
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IRGP4760PbF/IRGP4760-EPbF
10
200
150
100
50
9
T = 25°C
J
8
T = 175°C
J
7
E
ON
6
5
4
3
2
E
OFF
1
0
0
0
10 20 30 40 50 60 70 80 90 100110
(A)
4
6
8
10
(V)
12
14
V
GE
I
C
Fig. 13 - Typ. Energy Loss vs. IC
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 20µs
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
8
1000
100
10
7
6
E
ON
5
4
3
td
OFF
t
F
td
E
ON
OFF
2
1
0
t
R
0
20
40
60
()
80
100 120
0
10 20 30 40 50 60 70 80 90 100
(A)
I
R
C
G
Fig. 14 - Typ. Switching Time vs. IC
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
TJ = 175°C; L = 210µH; VCE = 400V, RG = 10; VGE = 15V
20
16
12
8
240
200
160
120
80
10000
T
sc
I
sc
1000
td
OFF
td
ON
t
R
100
10
1
t
F
4
0
40
8
10
12
14
(V)
16
18
0
20
40
60
()
80
100
V
GE
R
G
Fig. 17 - VGE vs. Short Circuit Time
CC = 400V; TC = 150°C
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210µH; VCE = 400V, ICE = 48A; VGE = 15V
V
5
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IRGP4760PbF/IRGP4760-EPbF
16
10000
1000
100
14
12
10
8
V
V
= 400V
= 300V
CES
CES
Cies
6
Coes
4
Cres
2
0
10
0
20
Q
40
60
80
100
0
100
200
V
300
(V)
400
500
, Total Gate Charge (nC)
G
CE
Fig. 19 - Typical Gate Charge vs. VGE
CE = 48A
Fig. 18 - Typ. Capacitance vs. VCE
I
VGE= 0V; f = 1MHz
1
D = 0.50
0.1
0.01
0.20
0.10
0.05
R1
R1
R2
R2
R3
R3
Ri (°C/W)
0.131857
0.190293
0.137850
i (sec)
0.000301
0.003726
0.021183
0.02
0.01
J J
1 1
2 2
33
Ci= iRi
Ci= iRi
0.001
0.0001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig. 20 - Maximum Transient Thermal Impedance, Junction-to-Case
6
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IRGP4760PbF/IRGP4760-EPbF
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.2 - RBSOA Circuit
diode clamp /
DUT
L
DUT /
VCC
DRIVER
Rg
Switching Loss
Fig.C.T.3 - S.C. SOA Circuit
Fig.C.T.4 - Switching Loss Circuit
C force
100K
D1 22K
C sense
DUT
G force
0.0075µF
E sense
E force
BVCES Filter
Fig.C.T.5 - Resistive Load Circuit
Fig.C.T.6 - BVCES Filter Circuit
7
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IRGP4760PbF/IRGP4760-EPbF
600
500
400
300
200
100
0
120
100
80
600
500
400
300
200
100
0
120
100
80
tf
tr
TEST
CURRENT
60
60
90% ICE
40
40
90% ICE
10% VCE
20
20
10% ICE
10%ICE
10% VCE
0
0
Eon Loss
5.25
Eoff Loss
-100
-20
-100
-20
4.25
4.75
time (µs)
-0.5
0
0.5
1
time(µs)
Fig. WF1 - Typ. Turn-off Loss Waveform
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
@ TJ = 175°C using Fig. CT.4
600
500
400
300
200
100
0
600
500
400
300
200
100
0
VCE
ICE
-100
2
-100
4
6
8
10
time (µs)
Fig. WF3 - Typ. S.C. Waveform
@ TJ = 150°C using Fig. CT.3
8
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August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)
TO-247AC Part Marking Information
Notes: This part marking information applies to devices produced after 02/26/2001
EXAMPLE: THIS IS AN IRFPE30
WITH ASSEMBLY
PART NUMBER
INTERNATIONAL
LOT CODE 5657
IRFPE30
135H
57
RECTIFIER
LOGO
ASSEMBLED ON WW 35, 2001
IN THE ASSEMBLY LINE "H"
56
DATE CODE
YEAR 1 = 2001
WEEK 35
ASSEMBLY
LOT CODE
Note: "P" in assembly line position
indicates "Lead-Free"
LINE H
TO-247AC package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
TO-247AD Part Marking Information
E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D -E
W IT H A S S E M B L Y
P A R T N U M B E R
IN T E R N A T IO N A L
L O T C O D E 5 6 5 7
R E C T IF IE R
L O G O
A S S E M B L E D O N W W 3 5 , 2 0 0 0
IN T H E A S S E M B L Y L IN E "H "
0 3 5 H
5 7
5 6
D A T E C O D E
Y E A R 2 0 0 0
W E E K 3 5
L IN E
0
=
A S S E M B L Y
L O T C O D E
N o te : "P " in a s s e m b ly lin e p o s itio n
in d ic a te s "L e a d -F re e "
H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
Qualification Information†
Qualification Level
Industrial
(per JEDEC JESD47F) ††
N/A
TO-247AC
TO-247AD
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
Comments
8/22/2014
Updated IC vs. TC graph Fig.2 to match page1 spec data on page 3.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
11
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August 22, 2014
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